The present invention relates to a chip resistor and a method for manufacturing the same.
The prior art chip resistor is manufactured by the method shown in
The above chip resistor has the following drawback. As shown in
The present invention is conceived under the circumstances described above. It is, therefore, an object of the present invention to provide a chip resistor which is not damaged even when such an impact force as described above is applied to the chip resistor. Another object of the present invention is to provide a method for manufacturing such a chip resistor.
According to a first aspect of the present invention, there is provided a chip resistor comprising: a resistor element including an electrode forming surface, at least two electrodes provided at the electrode forming surface, and an insulating layer provided at the electrode forming surface. The electrode-forming surface includes an inter-electrode region positioned between the two electrodes and covered by the insulating layer. The insulating layer has a thickness which is equal or generally equal to a thickness of the electrodes.
Preferably, the thickness of the insulating layer is smaller than the thickness of the electrodes. The difference between the thickness of the insulating layer and the thickness of the electrodes is so set that, when the resistor element flexes upon receiving a load, the insulating layer comes into contact with a flat mount surface before the resistor element is damaged.
Preferably, the thickness of the insulating layer is smaller than the thickness of the electrodes. The difference between the thickness of the insulating layer and the thickness of the electrodes is set to be smaller than the maximum deflection δmax of the resistor element when the maximum bending stress σmax produced in the resistor element reaches the elastic limit σy of the resistor element.
Preferably, the insulating layer is formed by thick film printing.
According to a second aspect of the present invention, there is provided a method for manufacturing a chip resistor comprising the steps of pattern-forming an insulating layer on an electrode forming surface of a resistor element material, forming a conductive layer on the electrode forming surface at a region where the insulating layer is not formed, the conductive layer having a thickness which is equal or generally equal to a thickness of the insulating layer, and dividing the resistor element material into a plurality of resistor elements each in the form of a chip. The division of the resistor element material is so performed that each of the resistor elements in the form of a chip includes part of the insulating layer and electrode portions spaced from each other by the part of the insulating layer.
Preferably, the pattern-forming of the insulating layer is performed by thick film printing.
Preferably, the formation of the conductive layer is performed by plating.
Preferably, the division of the resistor element material is performed by punching or cutting.
Preferred embodiments of the present invention will be described below with reference to the accompanying drawings.
The resistor element 1 has an elongated rectangular configuration and has a uniform thickness. The resistor element 1 can be made of a metal material such as Ni—Cu-based alloy, Cu—Mn-based alloy and Ni—Cr-based alloy. The metal material for making the resistor element is not limited to these, and other metal material may be used as long as it has a resistivity suitable for the size and the intended resistance of the chip resistor A1.
The first and the second insulating layers 2A and 2B are made of epoxy resin, for example. The first insulating layer 2A is formed on the lower surface (electrode forming surface) 10b of the resistor element 1, whereas the second insulating layer 2B is formed on the upper surface 10a of the resistor element 1. Specifically, the lower surface 10b of the resistor element 1 is made up of regions formed with electrodes 3 and the remaining region (hereinafter referred to as “inter-electrode region”). The first insulating layer 2A covers the entirety of the inter-electrode region. The second insulating layer 2B covers the entirety of the upper surface 10a of the resistor element 1.
The paired electrodes 3 are spaced from each other in the longitudinal direction of the resistor element 1. Each of the electrodes 3 is made of copper, for example. As shown in
The thickness t1 of the electrodes 3 and the thickness t2 of the first insulating layer 2A are equal or generally equal to each other. With such a structure, the resistor element 1 can be supported by the two electrodes 3 and the insulating layer 2A. Therefore, as compared with the prior art chip resistor (
Next, a method for manufacturing the chip resistor A1 will be described with reference to
First, as shown in
Subsequently, as shown in
As shown in
As compared with the prior art manufacturing method (
In the present invention, to obtain a plurality of resistor elements from the plate 1A, cutting means such as a shearing machine or a rotary cutter may be used instead of the above-described punching (See
The chip resistor A1 of the present invention can be surface-mounted on a circuit board by reflow soldering, for example. Specifically, the chip resistor A1 is placed on the circuit board so that each electrode 3 (solder layer 39) comes into contact with a terminal provided on the circuit board. In this state, the circuit board and the chip resistor A1 are heated in a reflow oven. Thereafter, the molten solder is cooled for hardening, whereby the chip resistor A1 is fixed to the circuit board.
Generally, in surface-mounting a chip resistor by reflow soldering, molten solder may be pressed out from between the electrode of the resistor and the circuit board. In such a case, in the prior art chip resistor (
Further, the upper surface 10a of the chip resistor A1 is covered by the second insulating layer 2B. With such a structure, the upper surface 10a is prevented from undesirably coming into contact with another conductive member.
In the present invention, the thickness t2 of the first insulating layer 2A and the thickness t1 of the electrode 3 are made equal or generally equal to each other. In the latter case, either t2 is greater than t1 (t2>t1) or the reverse (t2<t1). In the case where t2>t1, t2 is so set that the first insulating layer 2A does not project downward beyond the lower surface of the solder layer 39, for example. In the case where t2<t1, t2 is set within the range described below. First, the chip resistor A1 is regarded as a simple beam (opposite ends of the resistor element 1 are supported by the paired electrodes 3). The resistor element 1 is assumed to resiliently deform by receiving uniformly distributed load. In this case, the maximum bending stress σmax and the maximum deflection δmax produced in the resistor element 1 are given by the following formulae 1 and 2.
where w is the uniformly distributed load to be exerted to the resistor element 1, E is the longitudinal elastic modulus of the resistor element 1, s1 is the dimension between the electrodes 3, Z and I are respectively the modulus of section and the geometrical moment of inertia of the resistor element 1 which are defined by the following formulae 3 and 4.
where b is the width of the resistor element 1, and t3 is the thickness of the resistor element 1. From the formulae 1 through 4, the maximum deflection δmax when the maximum bending stress σmax reaches the elastic limit σy is obtained and represented as the formula 5 below.
When the thickness t2 is smaller than the thickness t1, the thicknesses are so set that the relation represented by the following formula 6 be established. When the difference between the thicknesses t1 and t2 lies in the range represented by the formula 6, the inter-electrode region of the resistor element 1 flexes until the surface of the first insulating layer 2A becomes flush with the electrodes 3 and is thereafter supported by the mount surface of the circuit board (on the assumption that the mount surface of the circuit board is flat). Therefore, the maximum bending stress σ max produced in the resistor element 1 does not reach the elastic limit σy, so that the resistor element 1 is prevented from being damaged.
The “elastic limit” in the present invention means yield stress in the case of iron and steel materials, and 0.2% proof stress in the case of non-ferrous materials. In the above embodiment, materials such as Ni—Cu-based alloy, Cu—Mn-based alloy and Ni—Cr-based alloy for forming the resistor element 1 are non-ferrous materials. Therefore, as the elastic limit σy it is proper to use 0.2% proof stress of these materials.
Examples of values to be assigned to the right side of the above formula 6 are as follows. The dimension s1 (between the electrode 3)=5 mm, the thickness t3 (of the resistor element 1)=0.5 mm, the longitudinal modulus E (of the resistor element 1)=130 GPa, and the 0.2% proof stress σy=360 MPa. In this case, from the formula 6, t1-t2 is found to be no greater than about 30 μm. It is to be noted that the values herein described are merely examples, and values need be set appropriately with respect to each individual chip resistor. In the value setting, the material of the resistor element, the size of the chip resistor, the positional relationship with the object for mounting (e.g. circuit board), the reference amount for defining the damage to the resistor element 1 (e.g. flexed amount, stress) are considered, for example.
For example, the chip resistor A3 can be used as follows. Among the four electrodes 3, two electrodes 3 are used as current electrodes, whereas the other two electrodes 3 are used as voltage electrodes. In the current detection of an electric circuit, the pair of current electrodes 3 is connected in series to the current path of the electric circuit. To the pair of voltage electrodes 3, a voltmeter is connected. Since the resistance of the chip resistor A3 is known, the voltage drop at the resistor element 1 of the chip resistor A3 is measured by using the voltmeter. By applying the measured value to the Ohm's law formula, the current flowing through the resistor element 1 can be found.
In the chip resistor of the present invention, more than four electrodes may be provided. For example, in the case where the number of electrodes is increased, only some of the electrodes may be used.
The above chip resistors A3 and A4 can be manufactured by a method similar to the method for manufacturing the chip resistor A1 of the first embodiment. With the method, the insulating layer 2A′ as the base to become the insulating layer 2A is formed into a pattern by a thick film printing. Therefore, it is possible to provide insulating layers which match various patterns of electrodes 3 of different number, configuration and arrangement.
The present invention being thus described, it is apparent that the same may be varied in many ways. Such variations should not be regarded as a departure from the spirit and scope of the present invention, and all such modifications as would be obvious to those skilled in the art are intended to be included within the scope of the following claims.
Number | Date | Country | Kind |
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2003-103843 | Apr 2003 | JP | national |
Filing Document | Filing Date | Country | Kind | 371c Date |
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PCT/JP04/05038 | 4/7/2004 | WO | 10/7/2005 |