Claims
- 1. An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor process, said device comprising:
a semiconductor substrate having a first conductivity type; a well region formed in said semiconductor substrate, said well region being of a second conductivity type which is different from said first conductivity type; a first region formed within said semiconductor substrate and outside said well region, said first region being of said first conductivity type; a second region formed within said semiconductor substrate and in between said first region and said well region, said second region being of said second conductivity type; a first contact on said device coupled to said first region and in electrical contact with said second region and connected to a Vss source; a third region formed having a portion in said well region and another portion outside said well region, but still within said semiconductor substrate, said third region being of said first conductivity type; a fourth region formed in said well region, said fourth region being of said first conductivity type; a fifth region formed within said well region and in between said third region and said fourth region, said fifth region being of said second conductivity type; and a second contact on said device coupled to said fourth region and said fifth region, and connected to an input/output pad.
- 2. The protection device in accordance with claim 1, wherein said first conductivity type is p-type.
- 3. The protection device in accordance with claim 1, wherein said second conductivity type is n-type.
- 4. The protection device in accordance with claim 2, wherein said first region is p-type of a higher doping level than said semiconductor substrate.
- 5. The protection device in accordance with claim 3, wherein said second region is n-type of a higher doping level than said well region.
- 6. The protection device in accordance with claim 2, wherein said third region is p-type of a higher doping level than said semiconductor substrate, having a doping concentration in a range of about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.−3.
- 7. The protection device in accordance with claim 2, wherein said fourth region is p-type of a higher doping level than said semiconductor substrate.
- 8. The protection device in accordance with claim 3, wherein said fifth region is n-type of a higher doping level than said well region.
- 9. The protection device in accordance with claim 1, wherein said first and second contact form a cathode and an anode of a silicon-control-rectifier device respectively.
- 10. The protection device in accordance with claim 1, wherein said third and fifth region form the p+-n+ junction of a zener diode.
- 11. An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor process, said device comprising:
a semiconductor substrate having a first conductivity type; a well region formed in said semiconductor substrate, said well region being of a second conductivity type which is different from said first conductivity type; a first region formed in said well region, said first region being of said second conductivity type; a second region formed having a portion in said well region and another portion outside said well region, but still within said semiconductor substrate, said second region being of said second conductivity type; a third region formed within said well region and in between said first region and said second region, said third region being of said first conductivity type; a first contact on said device coupled to said first region and said third region, and connected to an input/output pad; a fourth region formed within said semiconductor substrate and outside said well region, said fourth region being of said second conductivity type; a fifth region formed within said semiconductor substrate and in between said second region and said fourth region, said fifth region being of said first conductivity type; and a second contact on said device coupled to said fourth region and in electrical contact with said fifth region, and connected to a Vss source.
- 12. The protection device in accordance with claim 11, wherein said first conductivity type is p-type.
- 13. The protection device in accordance with claim 11, wherein said second conductivity type is n-type.
- 14. The protection device in accordance with claim 13, wherein said first region is n-type of a higher doping level than said well region.
- 15. The protection device in accordance with claim 13, wherein said second region is n-type of a higher doping level than said well region, having a doping concentration in a range of about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.−3.
- 16. The protection device in accordance with claim 12, wherein said third region is p-type of a higher doping level than said semiconductor substrate.
- 17. The protection device in accordance with claim 13, wherein said fourth region is n-type of a higher doping level than said well region.
- 18. The protection device in accordance with claim 12, wherein said fifth region is p-type of a higher doping level than said semiconductor substrate.
- 19. The protection device in accordance with claim 11, wherein said first and second contact form an anode and a cathode of a silicon-control-rectifier device respectively.
- 20. The protection device in accordance with claim 11, wherein said second and fifth region form the n+-p+ junction of a zener diode.
- 21. An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor process, said device comprising:
a semiconductor substrate having a first conductivity type; a well region formed in said semiconductor substrate, said well region being of a second conductivity type which is different from said first conductivity type; a first region formed within said semiconductor substrate and outside said well region, said first region being of said first conductivity type; a second region formed within said semiconductor substrate and in between said first region and said well region, said second region being of said second conductivity type, wherein said first region and said second are combined to become a cathode; a first contact on said device coupled to said first region and in electrical contact with said second region and connected to a Vss source; a third region formed having a portion in said well region and another portion outside said well region, but still within said semiconductor substrate, said third region being of said first conductivity type; a fourth region formed in said well region, said fourth region being of said first conductivity type; a fifth region formed within said well region and in between said third region and said fourth region, said fifth region being of said second conductivity type, wherein said second region, said third region, and said fifth region can be combined to become a first bipolar junction transistor, said third region, said fifth region, and said fourth region can be combined to become a second bipolar junction transistor, said third region and said fifth region can be combined to become a zener diode, and said fourth region and said fourth region can be combined to become an anode, said zener diode driving one of said first bipolar junction transistor and said second bipolar junction transistor; and said fifth region being common used in said first bipolar junction transistor and said second bipolar junction transistor; a second contact on said device coupled to said fourth region and said fifth region, and connected to an input/output pad.
- 22. The protection device in accordance with claim 21, wherein said first conductivity type is p-type.
- 23. The protection device in accordance with claim 21, wherein said second conductivity type is n-type.
- 24. The protection device in accordance with claim 22, wherein said first region is p-type of a higher doping level than said semiconductor substrate.
- 25. The protection device in accordance with claim 23, wherein said second region is n-type of a higher doping level than said well region.
- 26. The protection device in accordance with claim 22, wherein said third region is p-type of a higher doping level than said semiconductor substrate, having a doping concentration in a range of about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.−3.
- 27. The protection device in accordance with claim 22, wherein said fourth region is p-type of a higher doping level than said semiconductor substrate.
- 28. The protection device in accordance with claim 23, wherein said fifth region is n-type of a higher doping level than said well region.
- 29. The protection device in accordance with claim 21, wherein said first and second contact form a cathode and an anode of a silicon-control-rectifier device respectively.
- 30. The protection device in accordance with claim 21, wherein said third and fifth region form the p+-n+ junction of a zener diode.
- 31. An electrostatic discharge protection device, including a silicon-control-rectifier, in complementary metal-oxide semiconductor process, said device comprising:
a semiconductor substrate having a first conductivity type; a well region formed in said semiconductor substrate, said well region being of a second conductivity type which is different from said first conductivity type; a first region formed in said well region, said first region being of said second conductivity type; a second region formed having a portion in said well region and another portion outside said well region, but still within said semiconductor substrate, said second region being of said second conductivity type; a third region formed within said well region and in between said first region and said second region, said third region being of said first conductivity type, wherein said first region, said third region, and said second region can be combined to become a first bipolar junction transistor; a first contact on said device coupled to said first region and said third region, and connected to an input/output pad; a fourth region formed within said semiconductor substrate and outside said well region, said fourth region being of said second conductivity type; a fifth region formed within said semiconductor substrate and in between said second region and said fourth region, said fifth region being of said first conductivity type, wherein said third region, said second region, and said fifth region can be combined to become a second bipolar junction transistor and said second region and said fifth region can be combined to become a zener diode, said zener diode driving one of said first bipolar junction transistor and said second bipolar junction transistor; and a second contact on said device coupled to said fourth region and in electrical contact with said fifth region, and connected to a Vss source.
- 32. The protection device in accordance with claim 31, wherein said first conductivity type is p-type.
- 33. The protection device in accordance with claim 31, wherein said second conductivity type is n-type.
- 34. The protection device in accordance with claim 33, wherein said first region is n-type of a higher doping level than said well region.
- 35. The protection device in accordance with claim 33, wherein said second region is n-type of a higher doping level than said well region, having a doping concentration in a range of about 1.times.10.sup.18 to about 1.times.10.sup.19 cm.sup.−3.
- 36. The protection device in accordance with claim 32, wherein said third region is p-type of a higher doping level than said semiconductor substrate.
- 37. The protection device in accordance with claim 33, wherein said fourth region is n-type of a higher doping level than said well region.
- 38. The protection device in accordance with claim 32, wherein said fifth region is p-type of a higher doping level than said semiconductor substrate.
- 39. The protection device in accordance with claim 31, wherein said first and second contact form an anode and a cathode of a silicon-control-rectifier device respectively.
- 40. The protection device in accordance with claim 31, wherein said second and fifth region form the n+-p+ junction of a zener diode.
Parent Case Info
[0001] This application is a continuation-in-part of U.S. patent application Ser. No. 09/396,165, filed Sep. 14, 1999.
Continuation in Parts (1)
|
Number |
Date |
Country |
Parent |
09396165 |
Sep 1999 |
US |
Child |
09952125 |
Sep 2001 |
US |