Patent Application
20180171437
The present invention relates to a copper alloy for an electronic and/or electric device (electronic/electric device), which is suitable for terminals such as lead frames, connectors, press-fits and the like; a plastically-worked copper alloy material for an electronic and electric device made of the copper alloy for an electronic and electric device; a component for an electronic and electric device; a terminal; and a busbar.
Conventionally, highly conductive copper or copper alloy is used for an electronic or electric device such as terminals of connectors, press-fits, or the like; relays; lead frames; bus bars; and the like.
In response to the size reduction of an electronic, an electric device, and the like, there have been attempts to reduce the size and thickness of components for an electronic and electric device used in the electronic device and electric device. Therefore, high strength and excellent bendability are required for the material constituting the component of the electronic or electric device. In addition, the stress relaxation resistance is needed for the terminals of connectors used in a high temperature environment such as in the engine room of an automobile or the like.
For example, Cu—Mg alloys are proposed in Japanese Patent (Granted) Publication No. 5045783 (B) and Japanese Unexamined Patent Application, First Publication No. 2014-114464 (A) as a material used for the electronic and electric device such as terminals; relays; lead frames; busbars; and the like.
In the Cu—Mg-based alloy described in Japanese Patent (Granted) Publication No. 5045783 (B), since the content of Mg is high, conductivity is insufficient and it is difficult to apply the alloy to applications requiring high conductivity.
In addition, coarse precipitates are formed in the Cu—Mg alloy described in Japanese Unexamined Patent Application, First Publication No. 2014-114464 (A) since the Mg content is 0.01-0.5 mass % and the P content is 0.01-0.5 mass %. Thus, the cold workability and the bendability are insufficient.
Meanwhile, in the case of manufacturing components for electronic/electric devices such as relays and large terminals having comparatively large size among the components for electronic/electric devices which are becoming smaller, the electronic/electric devices often are subjected to punching in such a way that the longitudinal direction of the electronic/electric device is directed to a direction parallel to the rolling direction of the rolled sheet. Then, in these large terminals or the like, the bending process is performed so that the axis of bending is orthogonal to the rolling direction of the copper alloy rolled sheet.
Recently, with the reduction in the weight of electronic/electric devices, thinning of terminals such as connectors and components of electronic/electric devices such as relays and lead frames, both of which are used for these electronic/electric devices, are attempted. Therefore, in terminals such as connectors, it is necessary to perform severe bending work in order to ensure the contact pressure. Thus, even better bendability is required compared to the conventional ones.
The present invention is made under the circumstances described above. The purpose of the present invention is to provide a copper alloy for an electronic/electric device, a plastically-worked copper alloy material for an electronic or electric device, a component for an electronic or electric device, a terminal, and a busbar, all of which have excellent electrical conductivity, strength, bendability, and stress relaxation resistance.
In order to solve the above-described problem, a copper alloy for an electronic and electric device, which is an aspect of the present invention, (hereinafter, referred as “the copper alloy for an electronic and electric device of the present invention”) is configured that the copper alloy for an electronic and electric device includes: Mg in a range of 0.15 mass % or more and less than 0.35 mass %; and a Cu balance including inevitable impurities, wherein the electrical conductivity of the copper alloy is more than 75% IACS, and a yield ratio YS/TS, which is calculated from strength TS and 0.2% yield strength YS obtained in a tensile test performed in a direction parallel to a rolling direction, is more than 88%.
According to the copper alloy for an electronic and electric device configured as described above, the strength and the stress relaxation resistance can be improved without greatly decreasing the electrical conductivity by dissolving Mg in the Cu matrix phase since the Mg content is in the range of 0.15 mass % or more and less than 0.35 mass %. Specifically, since the conductivity is more than 75% IACS, it can be applied to applications requiring high conductivity.
In addition, since yield ratio YS/TS, which is calculated from strength TS in a tensile test performed in a direction parallel to a rolling direction and 0.2% yield strength YS, is more than 88%, the 0.2% yield strength YS is relatively higher than the strength TS. Therefore, the balance between the yield strength and bending is improved and the bendability in the direction parallel to the rolling direction becomes excellent. Accordingly, it is possible to suppress the occurrence of cracking or the like even in the case of bending in a direction parallel to the rolling direction of the copper alloy rolled sheet such as relays and large-sized terminals to form it into a complex shape.
In the copper alloy for electronic and electric device of the present invention, the copper alloy may further include P in a range of 0.0005 mass % or more and less than 0.01 mass %.
In this case, by adding P, the viscosity of the molten copper alloy containing Mg can be lowered, and castability can be improved.
In addition, in the case where the copper alloy for electronic and electric device of the present invention includes P in the above-described range, the Mg content [Mg] in mass % and the P content [P] in mass % may satisfy a relational expression of [Mg]+20×[P]<0.5.
In this case, it is possible to suppress the formation of coarse crystals containing Mg and P, and to suppress the deterioration of cold workability and bendability.
In addition, in the case where the copper alloy for electronic and electric device of the present invention includes P in the above-described range, the Mg content [Mg] in mass % and the P content [P] in mass %, may satisfy a relational expression of [Mg]/[P]≤400.
In this case, the castability can be improved reliably by defining the ratio between the content of Mg, which reduces the castability, and the content of P, which improves the castability, as described above.
In addition, in the copper alloy for electronic and electric device of the present invention, an average crystal grain size may be 100 μm or less.
As a result of examining the relationship between the crystal grain size and the yield ratio YS/TS, it was found that the yield ratio YS/TS can be improved by reducing the crystal grain size. In the copper alloy for electronic and electric devices of the present invention, the above yield ratio can be largely improved by suppressing the average crystal grain size to 100 μm or less.
In addition, in the copper alloy for electronic and electric device of the present invention, residual stress ratio may be 50% or more at 150° C. for 1000 hours.
In this case, permanent deformation can be kept small even if the copper alloy is used in a high-temperature environment since the stress relaxation ratio is defined as described above. Thus, reduction of the contact pressure of connector terminals or the like can be suppressed, for example. Therefore, the copper alloy can be applied to the materials for a component of an electronic and electric device used in a high-temperature environment such as the engine room and the like.
A plastically-worked copper alloy material for an electronic and electric device, which is another aspect of the present invention, (hereinafter, referred as “the plastically-worked copper alloy material for an electronic and electric device of the present invention”) is made of the above-described copper alloy for an electronic and electric device.
According to the plastically-worked copper alloy material configured as described above, the plastically-worked copper alloy material has excellent electrical conductivity, strength, bendability, and stress relaxation resistance, since it is made of the above-described copper alloy for an electronic and electric device. Thus, the plastically-worked copper alloy material is particularly suitable for the material of an electronic and electric device, such as: terminals of connectors, press-fits or the like; relays; lead frames; busbars and the like.
In the plastically-worked copper alloy material for an electronic and electric device of the present invention, a Sn plating layer or a Ag plating layer may be provided
In this case, the plastically-worked copper alloy material is particularly suitable for the material of an electronic and electric device, such as: terminals of connectors, press-fits or the like; relays; lead frames; busbars and the like since the Sn plating layer or the Ag plating layer is provided on the surface of the plastically-worked copper alloy material. In the present invention, “the Sn plating” includes a Sn plating of the pure Sn and a plating of a Sn alloy; and “the Ag plating” includes a plating made of the pure Ag and a plating made of a Ag alloy.
A component for an electronic and electric device, which is other aspect of the present invention, (hereinafter, referred as “the component for an electronic and electric device of the present invention”) is made of the above-described plastically-worked copper alloy material for an electronic and electric device. The component for an electronic and electric device of the present invention includes: terminals of connectors, press-fits or the like; relays; lead frames; busbars and the like.
The component for an electronic and electric device configured as described above can exhibit excellent properties even if it is down-sized and thinned since it is produced by using the plastically-worked copper alloy material described above.
A terminal, which is other aspect of the present invention, (hereinafter, referred as “the terminal of the present invention”) is made of the above-described plastically-worked copper alloy material for an electronic and electric device.
The terminal configured as described above can exhibit excellent properties even if it is down-sized and thinned since it is produced by using the plastically-worked copper alloy material described above.
A busbar, which is other aspect of the present invention, (hereinafter, referred as “the busbar of the present invention”) is made of the above-described plastically-worked copper alloy material for an electronic and electric device.
The busbar configured as described above can exhibit excellent properties even if it is down-sized and thinned since it is produced by using the plastically-worked copper alloy material described above.
According to the present invention, a copper alloy for an electronic and electric device; a plastically-worked copper alloy material for an electronic and electric device; a component for an electronic and electric device; a terminal; and a busbar, each of which has excellent electrical conductivity, strength, bendability, and stress relaxation resistance, can be provided.
The FIGURE is a flowchart of a method of producing the copper alloy for an electronic and electric device of an embodiment of the present invention.
A copper alloy for an electronic and electric device, which is an embodiment of the present invention, is explained below.
The copper alloy for an electronic and electric device of the present embodiment has a composition including: Mg in the range of 0.15 mass % or more and less than 0.35 mass %; and the Cu balance including inevitable impurities.
In addition, the electrical conductivity is set to more than 75% IACS in the copper alloy for an electronic and electric device of the present embodiment.
In addition, a yield ratio YS/TS, which is calculated from strength TS in a tensile test performed in a direction parallel to a rolling direction and 0.2% yield strength YS, is more than 88% in the copper alloy for an electronic and electric device of the present embodiment. That is, the present embodiment is a rolled material of a copper alloy for electronic and electrical devices, and the relationship between the strength TS and the 0.2% yield strength YS in a tensile test performed in the direction parallel to the rolling direction in the final step in rolling is defined as described above.
In the copper alloy for electronic and electric device of the present embodiment, the copper alloy further includes P in a range of 0.0005 mass % or more and less than 0.01 mass %.
In the case where the copper alloy for electronic and electric device of the present embodiment includes P in the above-described range, the Mg content [Mg] in a mass % and the P content [P] in a mass % satisfy a relational expression of [Mg]+20×[P]<0.5.
In addition, in the case where the copper alloy for electronic and electric device of the present embodiment includes P in the above-described range, the Mg content [Mg] in mass % and the P content [P] in mass % satisfy a relational expression of [Mg]/[P]≤400.
In addition, in the copper alloy for electronic and electric device of the present invention, an average crystal grain size is 100 μm or less.
In addition, in the copper alloy for electronic and electric device of the present embodiment, residual stress ratio is 50% or more at 150° C. for 1000 hours.
Reasons for setting the component compositions, the crystal grain size, and each of characteristics as described above are explained below.
(Mg: 0.15 Mass % or More and Less than 0.35 Mass %)
By dissolving Mg in matrix of the copper alloy, it is possible to improve the strength and the stress relaxation resistance without significantly reducing the conductivity.
If the Mg content is less than 0.15 mass %, there would be a possibility that the above-described effect cannot be obtained sufficiently. On the other hand, if the Mg content were 0.35 mass % or more, there would be a possibility that the electrical conductivity is significantly reduced and the viscosity of the melted copper alloy is increased and the castability is reduced.
Accordingly, the Mg content is set to the range of 0.15 mass % or more and less than 0.35 mass % in the present embodiment.
In order to further improve the strength and the stress relaxation resistance, it is preferable that the lower limit of the Mg content is set 0.18 mass % or more. It is more preferable that the lower limit of the Mg content is set to 0.2 mass % or more. In addition, in order to reliably suppress reduction of the electrical conductivity and castability, it is preferable that the upper limit of the Mg content is set to 0.32 mass % or less. It is more preferable that the upper limit of the Mg content is set to 0.3 mass % or less.
(P: 0.0005 Mass % or More and Less than 0.01 Mass %)
P is an element having effect of improving castability. In addition, P has a function of miniaturizing re-crystalized crystal grains by forming a compound with Mg.
If the P content were less than 0.0005 mass %, there would be a possibility that the above-described effect cannot be obtained sufficiently. On the other hand, if the P content were 0.01 mass % or more, there would be a possibility that cracking occurs in cold working or bending since above-described precipitates containing Mg and P are coarsened; and these precipitates become start points of breakage.
Accordingly, the P content is set to the range of 0.0005 mass % or more and less than 0.01 mass % in the present embodiment of adding P. In order to reliably improve the castability, it is preferable that the lower limit of the P content is set to 0.0007 mass % or more. It is more preferable that the lower limit of the P content is set to 0.001 mass % or more. In addition, in order to reliably suppress formation of the coarse precipitates, it is preferable that the upper limit of the P content is set to less than 0.009 mass %. It is more preferable that the upper limit of the P content is set to less than 0.008 mass %. It is most preferable that the upper limit of the P content is set to less than 0.0075 mass %.
In the case of adding P, as described above, the precipitates containing Mg and P are formed by having Mg and P coexist.
If the value of [Mg]+20×[P] were 0.5 or more where [Mg] is the Mg content and [P] is the P content in mass %, there would be a possibility that cracking occurs in cold working or bending since the total amount of Mg and P is excessive; the precipitates containing Mg and P are coarsened and distributed in high density.
Accordingly, [Mg]+20×[P] is set to less than 0.5 in the present embodiment of adding P. In order to reliably suppress the coarsening and high-densification of the precipitates and formation of cracking in cold working or bending, it is preferable that [Mg]+20×[P] is set to less than 0.48. It is more preferable that [Mg]+20×[P] is set to less than 0.46.
In order to reliably improve castability, it is necessary for the ratio of the Mg and P contents to be optimized since Mg is an element having effect of increasing the viscosity of the copper alloy melt and reducing the castability.
If [Mg]/[P] exceeded 400 where [Mg] is the Mg content and [P] is the P content in mass %, there would be a possibility that the effect of improving the castability by adding P is reduced since the Mg content relative to P is increased.
Accordingly, [Mg]/[P] is set to 400 or less in the present embodiment of adding P. In order to further improve the castability, it is preferable that [Mg]/[P] is set to 350 or less. It is more preferable that [Mg]/[P] is set to 300 or less.
If [Mg]/[P] were excessively low, there would be a possibility that Mg is consumed as the precipitates; and the effect of solid soluting of Mg cannot be obtained. In order to reliably improve the yield strength and the stress relaxation resistance because of solid soluting of Mg by suppressing the formation of the precipitates containing Mg and P, it is preferable that the lower limit of [Mg]/[P] is set to a value exceeding 20. It is more preferable that the lower limit of [Mg]/[P] is set to a value exceeding 25.
As other inevitable impurities, Ag; B; Ca; Sr; Ba; Sc; Y; rare earth elements; Ti; Zr; Hf; V; Nb; Ta; Cr; Mo; W; Mn; Re; Fe; Ru; Os; Co; Se; Te; Rh; Ir; Ni; Pd; Pt; Au; Zn; Cd; Hg; Al; Ga; In; Ge; Sn; As; Sb; Tl; Pb; Bi; Be; N; C; Si; Li; H; O; S; or the like can be named. The total amount of these inevitable impurities is set to 0.1 mass % or less since they have action to reduce electrical conductivity. It is preferable that the total content of the inevitable impurities is set to 0.09 mass % or less. It is more preferable that the total content of the inevitable impurities is set to 0.08 mass % or less.
Since Ag, Zn, and Sn are easily dissolved in Cu for the electrical conductivity to be reduced, it is preferable that the total amount of Ag, Zn, and Sn is set to less than 500 mass ppm.
Moreover, Si, Cr, Ti, Zr, Fe and Co particularly reduce the electrical conductivity significantly and deteriorate the bendability by forming inclusion bodies. Thus, it is preferable that the total amount of Si, Cr, Ti, Zr, Fe, and Co is set to less than 500 mass ppm.
(Yield Ratio YS/TS: More than 88%)
If the yield ratio YS/TS calculated from the strength TS and the 0.2% yield strength YS obtained in the tensile test performed in the direction parallel to the rolling direction were more than 88%, the 0.2% yield strength would relatively increase with respect to the strength TS. Bendability is a matter of breakage and closely correlates with the strength. Therefore, the 0.2% yield strength is relatively high with respect to the strength, the balance between the yield strength and the strength is improved and the bendability becomes excellent.
In order to securely improve the bendability, it is preferable that the yield ratio YS/TS is set to 90% or more. More preferably, it is set to 91% or more. Even more preferably, it is set to 92% or more.
The copper alloy for an electronic or electric device of the present embodiment can be suitably used as a component for an electronic or electric device such as: terminals of connectors, press-fits, or the like; relays; lead frames; busbars; and the like by setting the electric conductivity to a value exceeding 75% IACS.
It is preferable that the electrical conductivity is set to more than 76% IACS. More preferably, it is more than 77% IACS. Even more preferably, it is more than 78% IACS. Even more preferably, it is more than 80% IACS.
In the copper alloy for electronic and electrical devices of the present embodiment, the average crystal grain size is set to 100 μm or less. When the crystal grain size becomes small, the yield ratio YS/TS increases. Thus, the yield ratio YS/TS in the direction parallel to the rolling direction can be improved further by setting the average crystal grain size to 100 μm or less.
The average crystal grain size is preferably 50 μm or less, and more preferably 30 μm or less.
The residual stress ratio is set to 50% or more at 150° C. for 1000 hours in the copper alloy for an electronic or electric device of the present embodiment. In the case where the residual stress ratio under the above-described condition is high, the permanent deformation can be kept small; and reduction of the contact pressure can be suppressed even if it is used in a high-temperature environment. Thus, the copper alloy for an electronic or electric device of the present embodiment can be applied as the terminal used in a high-temperature environment such as locations around the engine room of an automobile. In the present embodiment, the residual stress ratio when the tensile test is carried out a tensile test in the direction orthogonal to the rolling direction is set to 50% or more at 150° C. for 1000 hours.
It is preferable that the residual stress ratio is set to 60% or more at 150° C. for 1000 hours. More preferably, it is set to 70% or more at 150° C. for 1000 hours.
Next, a method of producing a copper alloy for an electronic and electric device of the present embodiment as configured above is explained in reference to the flowchart in
First, components are adjusted by adding the above-described elements to molten copper obtained by melting a copper raw material, thereby producing a molten copper alloy. Here, the molten copper is preferably a so-called 4NCu having purity set to 99.99% by mass or more: or a so-called 5NCu having purity set to 99.999% by mass or more. Meanwhile, as each of elements added, it is possible to use a single body of the element, an alloy of the element, or the like.
In addition, a raw material including the element may be melted together with the copper raw material. In addition, a recycled material or a scrapped material of the present alloy may also be used. In the melting step, it is preferable to perform atmosphere melting in an inert gas atmosphere with a low vapor pressure of H2O and keep the retention time in melting to the minimum in order to suppress oxidation of Mg; and reduce the hydrogen concentration.
Then, the ingot is produced by pouring the copper alloy melt with the adjusted component composition. In consideration of mass production, it is preferable that the continuous casting method or the semi-continuous casting method is used.
At this time, precipitates containing Mg and P are formed in solidification of the melt. Thus, by increasing the solidification rate, the size of the precipitates can be miniaturized further. Therefore, it is preferable that the cooling rate of the melt is set to 0.1° C./sec or more. More preferably, it is set to 0.5° C./sec or more. Most preferably, it is set to 1° C./sec or more.
Next, a heating treatment is carried out in order for homogenization of the obtained ingot and formation of a solid solution. Inside the ingot, an intermetallic compound including Cu and Mg as major components which is generated by Mg being condensed due to segregation in a solidification step is present. Therefore, in order to remove or reduce the segregation and the intermetallic compound, a heating treatment in which the ingot is heated to a temperature in a range of 300° C. to 900° C. is carried out, thereby homogeneously dispersing Mg or dissolving Mg in the matrix in the ingot. Meanwhile, this homogenization/solution treatment step S02 is preferably carried out in a non-oxidizing or reducing atmosphere.
Here, when the heating temperature is lower than 300° C., formation of a solid solution becomes incomplete, and there is a concern that a large amount of an intermetallic compound including Cu and Mg as major components may remain in the matrix. On the other hand, when the heating temperature exceeds 900° C., some of the copper material turns into a liquid phase, and there is a concern that the structure or the surface state may become uneven. Therefore, the heating temperature is set in a range of 300° C. to 900° C.
Hot working may be performed after the above-described homogenization/solution treatment step S02 for efficient rough working which is described below and homogenization of the structure. In this case, the processing method is not particularly limited. For example, rolling, drawing, extrusion, groove rolling, forging, pressing, or the like can be used. In addition, it is preferable that the temperature of hot working is set to the range of 300° C. or more and 900° C. or less.
In order to shape the material into a predetermined shape, rough working is performed. The temperature condition in the rough working step S03 is not particularly limited. However, it is preferable that the temperature condition is set to the range of −200° C. to 200° C., which corresponds to cold or warm rolling, in order to suppress recrystallization or to improve dimensional accuracy. It is particularly preferable that the temperature condition is a room temperature. It is preferable that the processing ratio (the rolling ratio) is 20% or more. More preferably, it is 30% or more. The processing method is not particularly limited. For example, rolling, drawing, extrusion, groove rolling, forging, pressing, or the like can be used
After the rough working step S03, a heat treatment is carried out for softening, which aims to reliably form a solid solution, form a recrystallized structure or improve working properties. A method for the heat treatment is not particularly limited; however, preferably, the heat treatment is carried out: at a holding temperature of 400° C. to 900° C.; for a retention time of 10 seconds or more and 10 hours or less; in a non-oxidizing atmosphere or a reducing atmosphere. In addition, the cooling method after heating is not particularly limited. However, it is preferable that a method such as the water quenching and the like having the cooling rate of 200° C./min or more is used.
Meanwhile, the rough working step S03 and the Intermediate heat treatment step S04 may be repeatedly carried out.
The copper material which has been subjected to the Intermediate heat treatment step S04 is finish-worked in order to be worked into a predetermined shape. Meanwhile, the temperature condition in the finish working step S05 is not particularly limited. However, it is preferable that the temperature condition is set to the range of −200° C. to 200° C., which corresponds to cold or warm rolling, in order to suppress recrystallization or softening. It is particularly preferable that the temperature condition is the room temperature. In addition, the processing rate is appropriately selected so that the copper alloy approximates to a final shape. However, in order to achieve improvement of: strength by means of work hardening; and the yield ratio by means of improvement of the yield strength, by sufficiently introducing dislocation by working in the finish working step S05, the processing ratio is preferably set to 35% or more. In addition, in a case in which additional improvement in the strength and the yield ratio is required, the processing ratio is more preferably set to 40% or more. Even more preferably, it is set to 45% or more.
Next, a finish heat treatment is carried out on the plastically-worked material obtained using the Finish working step S05 in order to improve the stress relaxation resistance and to obtain the effect of the low temperature annealing hardening; or to remove the residual strains.
If the heat treatment temperature were too high, the dislocation in the structure would be reduced significantly due to recovery or recrystallization, and the yield strength would be reduced significantly. That is, since the yield ratio YS/TS decreases, the heat treatment temperature is preferably 800° C. or less; and more preferably 700° C. or less. In addition, in order to rearrange the dislocations introduced at the time of working at a high processing rate in the finishing working step S05 and reliably restore ductility, the heat treatment temperature is preferably set to 250° C. or higher, more preferably 300° C. or higher. Meanwhile, in the Finish heat treatment step S06, it is necessary to set heat treatment conditions (temperature, time, and cooling rate) so as to prevent the significant decrease of the strength due to recrystallization.
For example, it is preferable that it is retained for roughly 1 second to 120 seconds at 350° C. This heat treatment is preferably carried out in a non-oxidizing atmosphere or a reducing atmosphere.
The method of the heat treatment is not particularly limited. However, a short time heat treatment with the continuous annealing furnace is preferable in view of the effect of reducing the production cost.
Furthermore, the above-described finish working step S05 and the finish heat treatment S06 may be repeatedly carried out.
As described above, the plastically-worked copper alloy material for an electronic and electric device and the rolled plate (thin plate) of the present embodiment are produced. The plate thickness of the plastically-worked copper alloy material for an electronic and electric device (thin plate) is set to the range of more than 0.05 mm to 3.0 mm or less. Preferably, the thickness is set to the range of more than 0.1 mm to less than 3.0 mm. A plastically-worked copper alloy material for an electronic and electric device (thin plate) having a thickness of less than 0.05 mm is not suitable for using as a conductive body in the high current application. In a plastically-worked copper alloy material for an electronic and electric device (thin plate) having a thickness of more than 3.0 mm, the press punching processing becomes difficult.
The plastically-worked copper alloy material for an electronic and electric device of the present invention may be used as a component for an electronic and electric device directly. Alternatively, a Sn plating layer or a Ag plating layer having the film thickness of 0.1-100 pm may be formed on one or both sides of the plate surfaces. At this time, it is preferable that the plate thickness of the plastically-worked copper alloy material for an electronic and electric device is 10-1000 times of the thickness of the plating layer.
In addition, the component for an electronic and electric device such as terminals of connectors, press-fits, or the like; relays; lead frames; bus bars; and the like, is formed by performing punching processing, bending, or the like using the copper alloy for an electronic and electric device of the present embodiment as the material.
According to the copper alloy for an electronic and electric device of the present embodiment configured as described above, the strength and the stress relaxation resistance can be improved without significantly reducing the electrical conductivity by solid soluting Mg in the copper matrix since the Mg content is set to the range of 0.15 mass % or more and less than 0.35 mass %.
In addition, the conductivity is set to 75% IACS or more in the copper alloy for an electronic and electric device of the present embodiment. Thus, it can be applied to applications in which high conductivity is needed.
In the copper alloy for electronic and electrical device of the present embodiment, the yield ratio YS/TS calculated from strength TS and 0.2% yield strength YS obtained in a tensile test performed in the direction parallel to the rolling direction, is more than 88%. Thus, the balance between the yield strength and bending is improved; and the bendability in the direction parallel to the rolling direction becomes excellent. Therefore, it is possible to suppress the occurrence of cracking or the like even in the case of bending in a direction parallel to the rolling direction of the copper alloy rolled sheet such as relays and large-sized terminals to form it into a complex shape.
In addition, in the case where P is added to the cooper alloy for electronic and electrical device of the present embodiment; and the P content is set to the range of 0.0005 mass % or more and less than 0.01 mass %, castability can be improved by reducing viscosity of the copper alloy melt.
In addition, formation of coarse precipitations containing Mg and P can be suppressed since the Mg content [Mg] in mass % and the P content [P] in mass % satisfy the relational expression of [Mg]+20×[P]<0.5. Accordingly, reduction of cold workability and bendability can be suppressed.
Moreover, the ratio between the content of Mg, which reduces the castability, and the content of P, which improves the castability, is optimized since the Mg content [Mg] in mass % and the P content [P] in mass % satisfy the relational expression of [Mg]/[P]<400 in the present embodiment. Accordingly, because of the effect of adding P, the castability can be reliably improved.
In addition, in the cooper alloy for electronic and electrical device of the present embodiment, since the average crystal grain is set to 100 μm or less, the yield ratio YS/TS can be improved significantly.
In addition, in the copper alloy for an electronic and electric device of the present embodiment, the residual stress ratio is set to 50% or more at 150° C. for 1000 hours. Accordingly, the permanent deformation can be kept small even if the copper alloy is used in a high-temperature environment. Thus, reduction of the contact pressure of connector terminals or the like can be suppressed, for example. Therefore, the copper alloy can be applied to the materials for a component of an electronic and electric device used in a high-temperature environment such as the engine room and the like.
In addition, since the plastically-worked copper alloy material for an electronic and electric device of the present embodiment is made of the above-described copper alloy for an electronic and electric device, a component for an electronic and electric device such as terminals of connectors, press-fits, or the like; relays; lead frames; bus bars; and the like can be produced by performing bending or the liken on this plastically-worked copper alloy material for an electronic and electric device.
In the case where the Sn plating layer or the Ag plating layer is formed on the surface, the plastically-worked copper alloy material is particularly suitable for the material of the component for an electronic and electric device such as terminals of connectors, press-fits, or the like; relays; lead frames; bus bars; and the like
In addition, since the component for an electronic and electric device of the present embodiment (such as terminals of connectors, press-fits, or the like; relays; lead frames; bus bars; and the like) is made of the above-described copper alloy for an electronic and electric device, it can exhibit excellent properties even if it is down-sized and thinned.
Thus far, the copper alloy for an electronic and electric device, the plastically-worked copper alloy material for an electronic and electric device, and the component (terminals, and busbars), which are embodiments of the present invention, have been described, but the present invention is not limited thereto and can be appropriately modified within the scope of the technical concept of the invention.
For example, in the above-described embodiments, examples of the method for producing the copper alloy for an electronic and electric device has been described, but the production methods are not limited to the present embodiments, and the copper alloy for an electronic and electric device may be produced by appropriately selecting an existing manufacturing method.
Hereinafter, results of confirmation tests carried out in order to confirm the effects of the present invention will be described.
The copper raw material made of oxygen-free copper (ASTM B152 C10100) having the purity of 99.99 mass % or more was prepared. Then, the copper raw material was inserted in a high purity graphite crucible and subjected to high frequency melting in an atmosphere furnace of Ar gas atmosphere. Then, each of additive elements was added in the obtained copper melt to prepare the component compositions shown in Table 1. By pouring the prepared copper melt in a mold, the ingot was produced. In Example 3 of the present invention, a mold made of an insulation material (ISOWOOL) was used. In Example 23 of the present invention, a carbon mold was used. In Examples 1-2, 4-22, 24-32 of the present invention and Comparative Examples 1-5, a copper alloy mold with water-cooling function was used as the mold for casting. The dimensions of ingots were about 20 mm for the thickness; about 150 mm for the width; and about 70 mm for the length.
A portion near the cast surface was subjected to face working; and the ingot was cut out for the size to be adjusted in such a way that the plate thickness of the final product became 0.5 mm.
This block was heated in an Ar gas atmosphere for four hours under a temperature condition shown in Table 2, thereby carrying out a homogenization/solution treatment.
After that, the heat treatment was performed in the temperature condition shown in Table 2 by using a salt bath after performing the rough working in the condition shown in Table 2.
The copper material that had been subjected to the heat treatment was appropriately cut in order to form a shape suitable as the final shape, and surface grinding was carried out in order to remove an oxide layer. After that,
Next, finish rolling (finish work) was carried out in the rolling ratio shown in Table 2 at the room temperature, and a thin plate having thickness of 0.5 mm, width of about 150 mm, and length of 200 mm was produced. In addition, after the finish rolling (finish work), a finish heat treatment was carried out in an Ar atmosphere under a condition shown in Table 2, and then water quenching was carried out, thereby producing a thin plate for characteristic evaluation.
As an evaluation of castability, the presence or absence of rough surface during the above-described casting was observed. One having no visually recognized rough surface at all or one having almost no visually recognized rough surface was graded as “A.” One with a minor rough surface with the depth of less than 1 mm was graded as “B.” One with rough surface with the depth of 1 mm or more and less than 2 mm was graded as “C.” One with a major rough surface with the depth of 2 mm or more was graded as “D”. Evaluation results are shown in Table 3.
The depth of rough surface means the depth of the rough surface from the end part toward the central part of the ingot.
No. 13B test specimen regulated by JIS Z 2241 was sampled from a strip material for characteristic evaluation, and the 0.2% yield strength was measured using the offset method of JIS Z 2241. The test specimen was sampled in the direction parallel to the rolling direction. Then, the yield ratio YS/TS was calculated from the obtained strength TS and the 0.2% yield strength YS. Evaluation results are shown in Table 3.
A test specimen having a width of 10 mm and a length of 150 mm was sampled from the strip material for characteristic evaluation, and the electrical resistance was obtained using a four-terminal method. In addition, the dimensions of the test specimen were measured using a micrometer, and the volume of the test specimen was computed. In addition, the electrical conductivity was calculated from the measured electric resistance and the volume. Meanwhile, the test specimen was sampled so that the longitudinal direction of the test specimen became perpendicular to the rolling direction of the strip material for characteristic evaluation.
Evaluation results are shown in Table 3.
Bending working was carried out on the basis of the method of Japan Copper and Brass Association Technical Standard JCBA-T307:2007, the testing method 4.
A plurality of test specimens having a width of 10 mm and a length of 30 mm were sampled from the thin plate for characteristic evaluation so that the bending axis became orthogonal with respect to the rolling direction;
and a W bending test was carried out using a W-shaped jig having a bending angle of 90 degrees and a bending radius of 0.3 mm (R/t=0.6).
The outer circumferential portion of the bent portion was visually observed, and a test specimen in which cracking was observed was graded as “C.” A test specimen in which a major folding was observed was graded as “B.” A test specimen with no observable folding was graded as “A.” Grades A and B were regarded as acceptable bendability. Evaluation results are shown in Table 3.
In each specimen, the rolled surface was mirror-polished and then was etched. The surface was photographed so that the rolling direction lay horizontally in the photograph, and a view magnified at 500 times (approximately 700 μm2×500 μm2) was observed. In addition, regarding crystal grain sizes, five vertical lines and five horizontal lines having a predetermined length were drawn on the photograph according to the cutting method of JIS H 0501, the number of crystal grains that were completely cut was counted, and the average value of those cut lengths was computed as the average crystal grain size.
In addition, in a case in which the crystal grain size was as fine as 10 μm or shorter, the average crystal particle diameter was measured using a SEM-EBSD (Electron Backscatter Diffraction Patterns) measurement instrument. Mechanical polishing was carried out using waterproof abrasive paper and diamond abrasive grains, and then finish polishing was carried out using a colloidal silica solution. After that, electron beams were applied to individual measurement points (pixels) in a measurement range on the specimen surface using a scanning electron microscope, and, by means of an orientation analysis using backscatter electron diffraction, a portion between measurement points in which the orientation difference between adjacent measurement points reached 15° or higher was considered as a large tile grain boundary, and a portion between measurement points in which the orientation difference between adjacent measurement points was 15° or lower was considered as a small tile grain boundary. A crystal grain boundary map was produced using the large tilt grain boundary, five vertical lines and five horizontal lines having a predetermined length were drawn on the crystal grain boundary map according to the cutting method of JIS H 0501, the number of crystal grains that were completely cut was counted, and the average value of those cut lengths was considered as the average crystal grain size.
In a stress relaxation resistance test using a method specified in a cantilever screw method of JCBA (Japan Copper and Brass Association)-T309:2004, a stress was applied to the specimen. In the test, the specimen was held at the temperature of 150° C. for 1000 hours, and the residual stress ratio thereof was measured. Evaluation results are shown in Table 3.
In the test method, a specimen (width: 10 mm) was collected from each of the strips for characteristic evaluation in a direction parallel to the rolling direction. An initial deflection displacement was set as 2 mm, and the span length was adjusted such that a surface maximum stress of the specimen was 80% of the yield strength. The surface maximum stress was determined from the following expression.
Surface Maximum Stress (MPa)=1.5Etδ0/Ls2 wherein,
E: Young's modulus (MPa),
t: Thickness of sample (t=0.5 mm),
δ0: Initial deflection displacement (2 mm), and
Ls: Span length (mm)
The residual stress ratio was measured from the bent portion after the test piece was held for 1000 hours at a temperature of 150° C. to evaluate stress relaxation resistance. The residual stress ratio was calculated using the following expression.
Residual Stress Ratio (%)=(1−δt/δ0)×100 wherein
δt: Permanent deflection displacement (mm) after holding at 150° C. for 1000 hours—permanent deflection displacement (mm) after holding at the room temperature for 24 hours, and
δ0: Initial deflection displacement (mm)
In Comparative Examples 1-2, the Mg content was lower than the range defined in the scope of the present invention; the 0.2% yield strength was low; and the strength was insufficient. In addition, the stress relaxation resistance was insufficient in Comparative Examples 1-2.
In Comparative Examples 3-4, the Mg content was higher than the range defined in the scope of the present invention; and the electrical conductivity was low.
In Comparative Example 5, the yield ratio YS/TS was low, and bendability was insufficient.
Contrary to that, it was confirmed that the 0.2% yield strength, the electrical conductivity, the stress relaxation resistance, and bendability were excellent in Examples of the present invention.
In addition, in the case of adding P, it was confirmed that castability was excellent in Examples of the present invention.
Based on these result, it was confirmed by Examples of the present invention that copper alloy for an electronic and electric device and plastically-worked copper alloy for an electronic and electric device having excellent electrical conductivity; strength; bendability; stress relaxation resistance; and castability were provided
Compared to the conventional technologies, a copper alloy for an electronic and electric device; a plastically-worked copper alloy material for an electronic and electric device; a component for an electronic and electric device; a terminal; and a busbar, each of which has excellent electrical conductivity, strength, bendability, stress relaxation resistance and castability, can be provided.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2015-177743 | Sep 2015 | JP | national |
| 2015-235096 | Dec 2015 | JP | national |
| 2016-069077 | Mar 2016 | JP | national |
This application is a U.S. National Phase application under 35 U.S.C. § 371 of International Patent Application No. PCT/JP2016/076376 filed on Sep. 8, 2016 and claims the benefit of Japanese Patent Applications No. 2015-177743, filed Sep. 9, 2015, No. 2015-235096, filed Dec. 1, 2015, and No. 2016-069077, filed Mar. 30, 2016, all of which are incorporated herein by reference in their entirety. The International Application was published in Japanese on Mar. 16, 2017 as International Publication No. WO/2017/043556 under PCT Article 21(2).
| Filing Document | Filing Date | Country | Kind |
|---|---|---|---|
| PCT/JP2016/076376 | 9/8/2016 | WO | 00 |
