Claims
- 1. The method of depositing a tungsten film comprising the steps of:
- heating a substrate to a temperature above 200.degree. C. under subatmospheric to atmospheric pressure in a chemical vapor deposition reactor;
- and following stream of hydrogen gas over the substrate in the reactor; and simultaneously introducing into said reactor mixtures of WF.sub.6 and n organohydrosilane having the general formula: ##STR5## wherein: R.sub.1, R.sub.2, R.sub.3, and R.sub.4 are selected from the group comprising hydrogen, a C.sub.1 to C.sub.10 alkyl group, a C.sub.6 to C.sub.10 aryl or aralkyl, or mixtures thereof with at least one but not all of the R groups being H.
- 2. The method of claim 1 wherein the organohydrosilane moieties R.sub.1, R.sub.2, R.sub.3, and R.sub.4 would also include the organosilyl radical, of the type: ##STR6## wherein: R.sub.5, R.sub.6, and R.sub.7 are selected from the group comprising of hydrogen, C.sub.1 -C.sub.10 alkyl, or mixtures thereof.
- 3. The method of claim 1 wherein the deposition temperature is between 200.degree. C. to about 450.degree. C.
- 4. The method of claim 3 wherein the deposition temperature is between 220.degree. C. and 380.degree. C.
- 5. The method of claim 3 wherein the deposition temperature is between 200.degree. C. and 360.degree. C.
- 6. The method of claim 1 wherein the reactor pressure in the reactor is selected from about 0.05 to 1000 torr.
- 7. The method of claim 1 wherein the organohydrosilane to WF.sub.6 ratio is less than 1.5.
- 8. The method of claim 1 wherein the organohydrosilane is a dialkylsilane of the type: ##STR7## wherein: R.sub.1 and R.sub.2 are selected from the group comprising a C.sub.1 to C.sub.6 alkyl group.
- 9. The method of claim 8 wherein the organohydrosilane is diethylsilane.
- 10. The method of claim 8 wherein the organohydrosilane is dimethylsilane.
- 11. The method of claim 1 wherein the organohydrosilane is a monoalkylsilane of the type: ##STR8## wherein: R is selected from the group comprising a C.sub.1 to C.sub.10 alkyl, a C.sub.6-C.sub.10 aryl, or aralkyl group.
- 12. The method of claim 11 wherein the organohydrosilane is methylsilane.
- 13. The method of claim 11 wherein the organohydrosilane is butylsilane.
- 14. The method of claim 1 wherein the organohydrosilane is a trialkylsilane of the type: ##STR9## wherein: R.sub.1, R.sub.2, and R.sub.3 are selected from the group comprising a C.sub.1 to C.sub.6 alkyl.
- 15. The method of claim 14 wherein the organohydrosilane is dimethylethylsilane.
- 16. The method of claim 1 wherein the organohydrosilane is diethylsilane and the substrate temperature is 325.degree. C., whereby the as deposited tungsten film exhibits a columnar growth microstructure.
- 17. The method of claim 1 wherein the organohydrosilane is dimethylethylsilane, the substrate temperature is 325.degree. C., and argon is mixed with said hydrogen, whereby the as deposited tungsten film exhibits a non-columnar, fine-grained growth microstructure.
Parent Case Info
This is a division of application Ser. No. 07/616,288, filed Nov. 20, 1990, now abandoned.
US Referenced Citations (5)
Divisions (1)
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Number |
Date |
Country |
Parent |
616288 |
Nov 1990 |
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