Patent Grant
9984617
1. Field of the Invention
The present invention relates to a display device including a light emitting element and to a driving method thereof, and particularly to a display device including a light emitting element, which is controlled by current, and to a driving method thereof.
2. Description of the Related Art
Display devices including light emitting elements have been developed. For example, a display device including a plurality of pixels each having a light emitting element and a drive transistor electrically connected to the light emitting element have been developed. In such a display device, the luminance of each pixel is controlled by controlling the amount of current flowing through a light emitting element with the use of a drive transistor.
The threshold voltage (hereinafter referred to as Vth) of a drive transistor, however, might vary between pixels. For this reason, a threshold voltage compensating pixel circuit, which compensates variations in Vth of a drive transistor, has been researched. A display device with a threshold voltage compensating pixel circuit in which a drive transistor is a diode-connected transistor has been researched, for example (see Patent Document 1).
A pixel circuit described in Patent Document 1 has a drive transistor Q1 which is a diode-connected transistor whose gate and source are connected to each other. Moreover, the pixel circuit includes a capacitor C2, a signal line Ui, and a signal line Sj. A gate of the drive transistor Q1 is electrically connected to one terminal of the capacitor C2; the other terminal of the capacitor C2 is electrically connected to the signal line Ui; and a drain of the drive transistor Q1 is electrically connected to the signal line Sj. The display device having the pixel circuit described in Patent Document 1 is capable of changing the potential of the signal line Ui in three levels, and capable of compensating Vth of the drive transistor Q1 by changing the potential of the other terminal of the capacitor C2 while applying a predetermined potential to the drain of the drive transistor Q1.
[Patent Document 1] Japanese Published Patent Application No. 2006-047787
The display device having the pixel circuit described in Patent Document 1, however, needs the signal line Ui in addition to the signal line Sj, leading to an increase in power consumption. Moreover, the amplitude voltage of the signal line Ui needs to be increased, leading to an increase in power consumption. Further, the display device needs a control circuit for the signal line Ui, leading to an increase in circuit size. Of particular note is that the potential of the signal line Ui needs to be changed in three levels. This makes it difficult for the control circuit for the signal line Ui to be a digital circuit; thus, the size of the control circuit is further increased. Furthermore, the signal lines Ui need to be controlled at different timings per row. For this reason, when the signal lines Ui are controlled by an external circuit, the number of connection points between a substrate with the pixel circuit and the external circuit is increased. For example, when the pixel circuits are provided in 640 rows, the number of connection points increases by 640.
In view of this, an object is to provide a display device in which the influence of variations in Vth of a drive transistor can be reduced, power consumption is reduced, and the size of a circuit and the number of connection points are not increased.
One embodiment of the present invention includes a plurality of pixels. Each of the plurality of pixels includes a transistor, a capacitor, and a display element. One terminal of the capacitor is electrically connected to a first line. The other terminal of the capacitor is electrically connected to a gate of the transistor. In a first period, a first terminal of the transistor is electrically connected to the gate of the transistor and the gate of the transistor is electrically connected to a second line. In a second period, the first terminal of the transistor is electrically connected to the gate of the transistor and a second terminal of the transistor is electrically connected to a third line. In a third period, the first terminal of the transistor is electrically connected to the first line and the second terminal of the transistor is electrically connected to the display element. In the first to third periods, a fixed potential is applied to the first line.
One embodiment of the present invention includes a plurality of pixels. Each of the plurality of pixels includes a transistor, a capacitor, and a display element. One terminal of the capacitor is electrically connected to a first line. The other terminal of the capacitor is electrically connected to a gate of the transistor. In a first period, a first terminal of the transistor is electrically connected to the gate of the transistor, the first terminal of the transistor is electrically disconnected from the first line, the gate of the transistor is electrically connected to a second line, a second terminal of the transistor is electrically disconnected from a third line, and the second terminal of the transistor is electrically disconnected from the display element. In a second period, the first terminal of the transistor is electrically connected to the gate of the transistor, the first terminal of the transistor is electrically disconnected from the first line, the gate of the transistor is electrically disconnected from the second line, the second terminal of the transistor is electrically connected to the third line, and the second terminal of the transistor is electrically disconnected from the display element. In a third period, the first terminal of the transistor is electrically disconnected from the gate of the transistor, the first terminal of the transistor is electrically connected to the first line, the gate of the transistor is electrically disconnected from the second line, the second terminal of the transistor is electrically disconnected from the third line, and the second terminal of the transistor is electrically connected to the display element. In the first to third periods, a fixed potential is applied to the first line.
One embodiment of the present invention includes a plurality of pixels. Each of the plurality of pixels includes a transistor, a capacitor, a display element, and first to fifth switches. One terminal of the capacitor is electrically connected to a first line. The other terminal of the capacitor is electrically connected to a gate of the transistor. A first terminal of the transistor is electrically connected to the gate of the transistor through the first switch. The first terminal of the transistor is electrically connected to the first line through the second switch. The gate of the transistor is electrically connected to a second line through the third switch. A second terminal of the transistor is electrically connected to a third line through the fourth switch. The second terminal of the transistor is electrically connected to the display element through the fifth switch. In the first to third periods, a fixed potential is applied to the first line.
According to the above embodiments, a video signal is input to the third line, and a fixed potential is applied to the second line.
In this specification, the term “connected” may mean “electrically connected”, for example. Therefore, the description “A and B are connected to each other” means that one or more of elements each of which enables electrical connection between A and B (e.g. switches, transistors, capacitors, resistors, and diodes) can be connected between A and B.
The present invention can provide, by the above configuration, a display device in which the influence of variations in Vth of a drive transistor can be reduced, power consumption is reduced, and the size of a circuit and the number of connection points are not increased.
Hereinafter, embodiments of the present invention will be described with reference to the drawings. However, the present invention is not limited to the following description. The present invention can be implemented in various ways and it will be readily appreciated by those skilled in the art that various changes and modifications are possible without departing from the spirit and the scope of the present invention. Therefore, unless such changes and modifications depart from the scope of the invention, they should be construed as being included therein. Note that reference numerals denoting the same portions are commonly used in different drawings.
In this embodiment, an example of a display device using a light emitting element as a display element, and an example of the driving method thereof will be described. Although a display device in this embodiment includes a plurality of pixels, an example of a circuit configuration of a single pixel and an example of the driving method thereof will be described below. Note that the plurality of pixels included in the display device in this embodiment has the same circuit configuration and employs the same driving method. The circuit configuration and the driving method below can therefore be applied to other pixels included in the display device in this embodiment.
A pixel included in the display device in this embodiment will be described with reference to
The pixel included in the display device in this embodiment includes a transistor 101, a capacitor 102, and a display element 103. The transistor 101 has a gate, a source, and a drain. The function of a source and the function of a drain may be interchanged depending on the conductivity type of transistors employed or depending on the direction of current flow induced by the circuit operation. Therefore, in this specification, one of a source and a drain is referred to as a first terminal and the other, a second terminal. Two electrodes of the capacitor 102 are referred to as a first terminal and a second terminal. The display element 103 can have an electrode 103A and an electrode 103B. The display element 103 can be a light emitting element, which is controlled by current, such as an EL element.
The circuit configuration and operation shown in
In
Note that when the potential of the first terminal of the transistor 101 (V11) and the potential of the gate of the transistor 101 (V12) become approximately the same as the potential of the line 213 (V3), the transistor 101 is turned on. Then, the potential of the second terminal of the transistor 101 starts to decrease. When the potential of the second terminal of the transistor 101 decreases to V3−|Vth101|, the transistor 101 is turned off.
The circuit configuration and operation shown in
In
The circuit configuration and operation shown in
In
In
The period T1 in
Next, the operation in the period T2 will be described. The period T2 in
Next, the period T3 will be described. The period T3 in
In the pixel included in the display device in this embodiment, the transistor 101 can have a function of supplying a current to the display element 103. The value of such a current can be set in accordance with a potential difference between the gate and the source of the transistor 101 (Vgs) in many cases. The transistor 101 can therefore serve as a drive transistor for the display element 103.
The transistor 101 can be a p-channel transistor. A p-channel transistor turns on when its Vgs becomes lower than its Vth. Note that the transistor 101 can be an n-channel transistor instead. An n-channel transistor turns on when its Vgs becomes higher than its Vth.
When an n-channel transistor is used, the transistor can be operated by setting the polarity of the potential in reverse to the case of using a p-channel transistor. In this case, the circuit configuration is changed as appropriate in order to obtain the polarity of the potential reverse to that in a circuit using a p-channel transistor.
The capacitor 102 can have a function of keeping the potential of the gate of the transistor 101. In other words, the capacitor 102 can have a function of holding Vgs of the transistor 101. That is, the capacitor 102 can serve as a storage capacitor.
The display element 103 can have the electrode 103A and the electrode 103B. The display element 103 can be a light emitting element such as an EL element. Note that the display element 103 can have three electrodes.
The electrodes 103B in the plurality of pixels included in the display device can be connected to each other. In other words, the electrode 103B can serve as a common electrode, a counter electrode, a cathode, or the like.
The fixed potential V1 is applied to the electrode 103B. The potential V1 can serve as a potential applied to a common electrode, a cathode, or the like. Note that a signal can be also input to the electrode 103B. Thus, the display element 103 can be reverse-biased.
The electrode 103A can serve as a pixel electrode.
The potential of a signal Vdata is input to the line 211. The potential Vdata can serve as a video signal. In other words, the line 211 can serve as a signal line, a video signal line, or a source signal line. In addition, the potential Vdata is an analog signal. Note that the potential Vdata can be a digital signal instead. By employing a digital signal as the potential Vdata, digital time grayscale can be achieved.
The fixed potential V2 is applied to the line 212. The potential V2 can serve as an anode potential. The line 212 can serve as a power supply line or an anode line. The potential V2 can be higher than the potential V1 (V2>V1). Note that when the anode and the cathode of the display element 103 are interchanged, the potential V2 can be lower than the potential V1.
The fixed potential V3 is applied to the line 213. The potential V3 can serve as an initialization potential or a reference potential. The line 213 can serve as a power supply line or an initialization line. In addition, the potential V3 can be lower than the potential V2 (V3<V2). Alternatively, the potential V3 can be lower than or approximately the same as the minimum value of the potential Vdata. Alternatively, the potential V3 can be approximately the same as the potential V1. Thus, the number of the types of potential can be reduced, thereby simplifying the configuration of a power supply circuit.
In addition, the pixel included in the display device in this embodiment can include another element such as a switch, a transistor, a diode, or a capacitor.
Further, the display device in this embodiment can have a plurality of primary colors (e.g. red, blue, green, white, yellow, magenta, cyan, or the like). In this case, the pixels of the display device in this embodiment can be categorized by the plurality of primary colors.
In this case, the channel width (W), the channel length (L), or the W/L ratio of the transistor 101 can be varied among the pixels by primary color. For example, the W/L ratio of the transistor 101 in a pixel belonging to a green group can be smaller than that of the transistor 101 in a pixel belonging to a red (or blue) group. Consequently, the balance of luminous efficacy among display elements belonging to a red group, display elements belonging to a blue group, and display elements belonging to a green group can be adjusted without changing the value of a video signal. As a result, the configuration of a circuit (e.g. a source driver) which inputs a video signal to the pixels can be simplified. Alternatively, the number of power sources or signals required for a circuit (e.g. a source driver) which inputs a video signal to the pixels can be reduced.
The value of a potential applied to the line 212 can be varied among the pixels by primary color. Consequently, the balance of luminous efficacy among a display element belonging to a red group, a display element belonging to a blue group, and a display element belonging to a green group can be adjusted without changing the value of a video signal.
According to this embodiment, it is possible to reduce the influence of variations in Vth of the transistor 101 (the drive transistor) and provide a display device capable of controlling the luminance of each pixel without being influenced by variations in Vth of the transistor 101. A fixed potential is applied to the line 212 and the line 213 used for correcting Vth. Thus, a display device in which power consumption is reduced, and the size of a circuit and the number of connection points are not increased can be provided.
This embodiment can be freely combined with any of the other embodiments.
A pixel of a display device in this embodiment will be described with reference to
The circuit configuration and operation shown in
In
The circuit configuration and operation shown in
The circuit configuration and operation shown in
Operations performed afterward, that is, an operation for applying a video signal to the pixel and an operation for displaying an image in accordance with the video signal are similar to those shown in
This embodiment can be freely combined with any of the other embodiments.
The pixel included in the display device in this embodiment will be described with reference to
The circuit configuration and operation shown in
In
The circuit configuration and operation shown in
The circuit configuration and operation shown in
Operations performed afterward, that is, an operation for applying a video signal to the pixel and an operation for displaying an image in accordance with the video signal are similar to those shown in
This embodiment can be freely combined with any of the other embodiments.
The pixel included in the display device in this embodiment will be described with reference to
The pixel shown in
The operations of the pixel performed in the periods T1 to T3 will be described with reference to
In the period T1 in
In the period T2 in
Consequently, the potential of the second terminal of the transistor 101 becomes approximately the same as the potential of the line 211 (Vdata). The potential of the line 211 (Vdata or the potential of a video signal) can be higher than the potential of the first terminal of the transistor 101 (V11), and higher than the potential of the gate of the transistor 101 (V12). Thus, the transistor 101 is turned on, so that continuity between the line 211, the first terminal of the transistor 101, and the gate of the transistor 101 is established. Then, the potential of the first terminal of the transistor 101 (V11), and the potential of the gate of the transistor 101 (V12) start to increase from V3. Then, the potential of the first terminal of the transistor 101 (V11), and the potential of the gate of the transistor 101 (V12) increase to Vdata−|Vth101| (Vth101 is the threshold voltage of the transistor 101). Consequently, the transistor 101 is turned off, so that continuity between the line 211, the first terminal of the transistor 101, and the gate of the transistor 101 is broken. Thus, the potential of the first terminal of the transistor 101 (V11), and the potential of the gate of the transistor 101 (V12) each become approximately Vdata−|Vth101|. At this time, the capacitor 102 can hold a potential difference between the gate of the transistor 101 and the line 212.
In the period T3 in
Consequently, the potential of the first terminal of the transistor 101 (V11) becomes approximately the same as the potential of the line 212 (V2). At that time, the potential of the gate of the transistor 101 (potential V12) is kept approximately Vdata−|Vth101| by the capacitor 102. Consequently, a potential difference between the gate and the source of the transistor 101 (Vgs) becomes approximately Vdata−|Vth101|−2. Thus, when the transistor 101 operates in the saturation region, a drain current of the transistor 101, that is, a current that flows through the display element 103 can be a value that is independent of the threshold voltage of the transistor 101. Thus, it is possible to compensate the threshold voltage of the transistor 101 and display an image in accordance with a video signal Vdata.
The switches 301 to 305 can be transistors. The transistors for the switches 301 to 305 may be of the same conductivity type (e.g. p-type or n-type). Alternatively, one or some of the transistors for the switches 301 to 305 may be of a different conductivity type from the others. For example, a situation where the switch 301, the switch 304, and the switch 305 are n-channel transistors, and the switch 302 and the switch 303 are p-channel transistors is possible. The switch 303 is connected to the line 212 that is high, and thus is preferably a p-channel transistor. Thus, the source of the transistor can be set at high potential, so that the absolute value of Vgs can be increased. The switch 303 can therefore operate accurately as a switch. The switch 304 is connected to the line 213 that is at low potential, and thus is preferably an n-channel transistor. Thus, the source of the transistor can be set at low potential, so that Vgs can be increased. The switch 304 can therefore operate accurately as a switch. The switch 301, the switch 302, and the switch 305 each can be either a p-channel transistor or an n-channel transistor.
Channel formation regions of the switches 301 to 305 may be made of the same material. Alternatively, the channel formation regions of one or some of the switches 301 to 305 may be made of a material different from those of the others. When these channel formation regions are made of different materials, either the case where the type of the materials is different or the case where the crystallinity of the materials is different while the type of the materials is the same is acceptable. The channel formation regions of the transistors for the switches 301 to 305 can be formed using, for example, silicon or another material. The other material can be an oxide semiconductor, for example. In addition, the channel formation regions of one or more of the switches 301 to 305 can be formed using silicon, and the channel formation regions of the other of the switches 301 to 305 can be formed using an oxide semiconductor.
For example, the channel formation regions of the transistors for the switch 302 and the switch 304 are preferably formed using an oxide semiconductor. When the channel formation regions are formed using an oxide semiconductor, the off-state current of the transistors can be reduced. Consequently, the amount of charge that the capacitor 102 loses can be reduced. The channel formation regions of the transistors for the switch 303 and the switch 305 are preferably formed using silicon, particularly polycrystalline silicon or single crystal silicon. This makes it possible to increase the mobility of the transistors, thereby suppressing a voltage drop due to the generation of a current in the transistors.
The W/L ratio of the transistor for the switch 303 (W denotes channel width, and L denotes channel length) is preferably higher than that of the transistors for the switch 302, the switch 301, or the switch 304. In addition, the W/L ratio of the transistor for the switch 305 is preferably higher than that of the transistors for the switch 302, the switch 301, or the switch 304.
When the W/L ratio of the transistor for the switch 303 is high, the potential of the first terminal of the transistor 101 can be prevented from decreasing from V2 due to voltage drop in the period T3. When the W/L ratio of the transistor for the switch 305 is high, the potential of the first terminal of the transistor 101 can be prevented from increasing due to voltage drop in the period T3. When the W/L ratio of the transistor for the switch 302 and the W/L ratio of the transistor for the switch 304 are low, the off-state current of the transistors can be reduced, thereby reducing the amount of charge that the capacitor 102 loses.
The W/L ratio of the transistor for the switch 303 is preferably higher than that of the transistor for the switch 305. This is because changes in the potential of the first terminal of the transistor 101 have greater influence than those in the potential of the second terminal of the transistor 101 on current generated in the display element 103, and changes in the potential of the first terminal of the transistor 101 cause changes in Vgs.
One or both of the transistor for the switch 302 and the transistor for the switch 304 are preferably a multi-gate transistor (e.g. a transistor with a plurality of gates). Thus, the off-state current of the transistor can be reduced, thereby reducing the amount of charge that the capacitor 102 loses.
Controlling the conduction state of a switch in such a manner enables the pixel in
According to this embodiment, it is possible to reduce the influence of variations in Vth of the transistor 101 (drive transistor) and provide a display device capable of controlling the luminance of each pixel without being influenced by variations in Vth of the transistor 101. A fixed potential is applied to the line 212 and the line 213 used for correcting Vth. Thus, a display device in which power consumption is reduced, and the size of a circuit and the number of connection points are not increased can be provided.
This embodiment can be freely combined with any of the other embodiments.
A pixel of a display device in this embodiment will be described with reference to
Note that in
A circuit that can perform the operation shown in
According to this embodiment, it is possible to reduce the influence of variations in Vth of the transistor 101 (the drive transistor) and provide a display device capable of controlling the luminance of each pixel without being influenced by variations in Vth of the transistor 101. A fixed potential is applied to the line 212 and the line 213 used for correcting Vth. Thus, a display device in which power consumption is reduced, and the size of a circuit and the number of connection points are not increased can be provided.
This embodiment can be freely combined with any of the other embodiments.
A pixel included in a display device in this embodiment will be described with reference to
In the case where the pixel includes a plurality of switches, the switches are turned on and off at approximately the same timing. In the case where the timing when one or some of the switches are turned on and off is the reverse of the timing when the others are turned on and off, lines for controlling these switches can be combined into a single line. A definition for the expression “lines are combined into a single line” will be explained. For example, a line A is connected to a terminal T, and a line B is connected to a terminal U. In this case, the expression “the line A and the line B are combined into a single line” means that one of the line A and the line B is omitted and the other of the line A and the line B is connected to the terminal T and the terminal U.
In many cases, the timing when the switch 303 and the switch 305 are turned on and off is the reverse of the timing when the switch 302 is turned on and off. It is therefore possible to combine the line 312 and the line 313 into a single line, the line 312 and the line 315 into a single line, or the line 312, the line 313, and the line 315 into a single line. In such a case, the conductivity type of an element used as the switch 302 is preferably the reverse of that of elements used as the switch 303 and the switch 305. For example, when the switch 302 is an n-channel transistor or a PNP transistor, the switch 303 and the switch 305 are preferably p-channel transistors or NPN transistors.
Various elements (e.g. transistors, diodes, and resistors) or various circuits (e.g. CMOS switches and analog switches) can be used as the switches.
The transistors 301A to 305A can be p-channel transistors. When all the transistors are of the same conductivity type, a reduction in the number of steps, a reduction in manufacturing cost, and improvement in yield can be achieved. Note that all, or one or some of the transistors 301A to 305A can be n-channel transistors.
An example of the operation of the pixel shown in
In the period T1, the potential S311, the potential S312, the potential S313, the potential S314, and the potential S315 are high, low, high, low, and high, respectively. In the period T2, the potentials S311, the potential S312, the potential S313, the potential S314, and the potential S315 are low, low, high, high, and high, respectively. In the period T3, the potential S311, the potential S312, the potential S313, the potential S314, and the potential S315 are high, high, low, high, and low, respectively. Thus, the pixel can operate in a manner similar to that described with reference to
According to this embodiment, it is possible to reduce the influence of variations in Vth of the transistor 101 (the drive transistor) and provide a display device capable of controlling the luminance of each pixel without being influenced by variations in Vth of the transistor 101. A fixed potential is applied to the line 212 and the line 213 used for correcting Vth. Thus, a display device in which power consumption is reduced, and the size of a circuit and the number of connection points are not increased can be provided.
This embodiment can be freely combined with any of the other embodiments.
A pixel included in a display device in this embodiment will be described with reference to
Although not illustrated, in the pixels shown in
An example of the operation of the pixel shown in
In the timing chart shown in
In each of the above-described pixels, the lines can be combined into a single line.
According to this embodiment, it is possible to reduce the influence of variations in Vth of the transistor 101 (the drive transistor) and provide a display device capable of controlling the luminance of each pixel without being influenced by variations in Vth of the transistor 101. A fixed potential is applied to the line 212 and the line 213 used for correcting Vth. Thus, a display device in which power consumption is reduced, and the size of a circuit and the number of connection points are not increased can be provided.
This embodiment can be freely combined with any of the other embodiments.
In this embodiment, an example of a general structure of a display device that is one embodiment of the present invention will be described with reference to
The display device shown in
In
When a timing signal is input to the first memory circuit 732, video signals are sequentially applied to and held in the first memory circuit 732 in response to the pulse of the timing signal. Note that the video signals may be sequentially applied to a plurality of memory elements included in the first memory circuit 732. Further, so-called division driving may be performed, in which the memory elements included in the first memory circuit 732 are divided into several groups and video signals are input to each group in parallel. Note that the number of groups in this case is referred to as the number of divisions. For example, when the memory elements are divided into groups each having four memory elements, division driving is performed with four divisions.
The time until the completion of application of video signals to all of the memory elements in the first memory circuit 732 is referred to as a line period. In practice, a period when a horizontal retrace interval is added to the line period refers to a line period in some cases.
When one line period is finished, the video signals held in the first memory circuit 732 are applied to the second memory circuit 733 all at once and held in response to the pulse of a signal S-LS which is input to the second memory circuit 733. Video signals in the next line period are sequentially applied to the first memory circuit 732 which has finished sending the video signals to the second memory circuit 733, in response to timing signals from the shift register 731 again. During this second round of one line period, the video signals that are applied to and held in the second memory circuit 733 are input to the respective pixels in the pixel area 700 through signal lines.
Note that in the signal line driver circuit 730, a circuit that can output signals, pulses of which are sequentially shifted, may be used instead of the shift register 731.
Note that although the pixel area 700 is directly connected to the second memory circuit 733 in the next stage in
Next, the structure of the scan line driver circuit 710 and the scan line driver circuit 720 is described. Each of the scan line driver circuit 710 and the scan line driver circuit 720 includes circuits such as a shift register, a level shifter, and a buffer.
Note that in the display device shown in
Note that although the pixel area 700, the scan line driver circuit 710, the scan line driver circuit 720, and the signal line driver circuit 730 can be provided over the same substrate, any of them can be provided over a different substrate.
This embodiment can be implemented in combination as appropriate with any of the above-described embodiments.
An example of a fabrication method of a display device that is one embodiment of the present invention will be described. Note that although a thin film transistor (TFT) is shown as an example of a semiconductor element in this embodiment, a semiconductor element used for the display device that is one embodiment of the present invention is not limited to this. For example, a memory element, a diode, a resistor, a capacitor, an inductor, or the like can be used instead of a transistor.
First, as shown in
A glass substrate such as a barium borosilicate glass substrate or an aluminoborosilicate glass substrate, a quartz substrate, a ceramic substrate, or the like can be used as the substrate 400. Alternatively, a metal substrate such as a stainless steel substrate with the surface provided with an insulating film, or a silicon substrate with the surface provided with an insulating film may be used. There is a tendency that a flexible substrate formed using a synthetic resin such as plastics generally has a lower allowable temperature limit than the above substrates; however, such a substrate can be used as long as it can withstand processing temperature in fabrication steps.
The insulating film 401 is provided in order that alkaline earth metal or alkali metal such as Na contained in the substrate 400 may be prevented from being diffused into the semiconductor film 402 and adversely affecting the characteristics of a semiconductor element such as a transistor. Thus, the insulating film 401 is formed using silicon oxide, silicon nitride, silicon nitride oxide, or the like which can suppress diffusion of alkali metal or alkaline earth metal into the semiconductor film 402. Note that in the case of using a substrate containing even a small amount of alkali metal or alkaline earth metal, such as a glass substrate, a stainless steel substrate, or a plastic substrate, it is effective to provide the insulating film 401 between the substrate 400 and the semiconductor film 402 from the viewpoint of preventing diffusion of impurities. However, when a substrate in which diffusion of impurities does not lead to a significant problem, such as a quartz substrate, is used as the substrate 400, the insulating film 401 is not necessarily provided.
The insulating film 401 is formed using an insulating material such as silicon oxide, silicon nitride (e.g., SiNx or Si3N4), silicon oxynitride (SiOxNy) (x>y>0), or silicon nitride oxide (SiNxOy) (x>y>0) by CVD, sputtering, or the like.
The semiconductor film 402 is preferably formed without being exposed to the air after forming the insulating film 401. The thickness of the semiconductor film 402 is 20 nm to 200 nm (preferably 40 nm to 170 nm, more preferably 50 nm to 150 nm). Note that the semiconductor film 402 may be formed using either an amorphous semiconductor or a polycrystalline semiconductor. In addition, as the semiconductor, silicon germanium, an oxide semiconductor, or the like can be used as well as silicon.
Note that the semiconductor film 402 may be crystallized by a laser crystallization method with laser light and a crystallization method with a catalytic element. Alternatively, a crystallization method with a catalytic element and a laser crystallization method can be used in combination. In addition, in the case where a substrate having high heat resistance, such as a quartz substrate, is used as the substrate 400, it is acceptable to use a combination of any of the following methods: a thermal crystallization method with an electrically heated oven, a lamp annealing crystallization method with infrared light, a crystallization method with a catalytic element, and high temperature annealing at about 950° C.
The semiconductor film 402 may remain as an amorphous semiconductor film or a microcrystalline semiconductor film without being crystallized and may be subjected to a process described below. A transistor formed using an amorphous semiconductor or a microcrystalline semiconductor has advantages of low cost and high yield because the number of fabrication steps is smaller than that of a transistor using a polycrystalline semiconductor.
Next, channel doping by which an impurity element that imparts p-type conductivity or an impurity element that imparts n-type conductivity is added at a low concentration is performed on the semiconductor film 402. The channel doping may be performed on the whole semiconductor film 402 or may be selectively performed on part of the semiconductor film 402. As an impurity element which imparts p-type conductivity, boron (B), aluminum (Al), gallium (Ga), or the like can be used. As an impurity element which imparts n-type conductivity, phosphorus (P), arsenic (As), or the like can be used. Here, boron (B) is used as the impurity element and is added so that it may be contained at a concentration of 1×1016/cm3 to 5×1017/cm3.
Next, as shown in
Then, as shown in
Specifically, a gate insulating film 410 is formed so as to cover the semiconductor film 403, the semiconductor film 404, and the semiconductor film 405. Then, over the gate insulating film 410, a plurality of conductive films 411 and 412 which are processed (patterned) into desired shapes are formed. A pair of the conductive films 411 and a pair of the conductive films 412 which overlap with the semiconductor film 403 function as a gate electrode 413 of the transistor 406 and a gate electrode 414 of the transistor 407. The conductive films 411 and 412 which overlap with the semiconductor film 404 function as a gate electrode 415 of the transistor 408. Further, the conductive films 411 and 412 which overlap with the semiconductor film 405 function as an electrode 416 of the storage capacitor 409.
Then, impurities which impart n-type or p-type conductivity are added to the semiconductor film 403, the semiconductor film 404, and the semiconductor film 405 by using the conductive films 411, the conductive films 412, or a resist which is deposited and patterned, as a mask, so that source regions, drain regions, and LDD regions, and the like are formed. Note that here, the transistors 406 and 407 are n-channel transistors and the transistor 408 is a p-channel transistor.
Note that the gate insulating film 410 is, for example, a single layer or a stack of silicon oxide, silicon nitride, silicon nitride oxide, silicon oxynitride, or the like. In the case of using the stack, a three-layer structure in which a silicon oxide film, a silicon nitride film, and a silicon oxide film are stacked in this order from the substrate 400 side is preferably used, for example. Further, the formation method can be plasma enhanced CVD, sputtering, or the like. For example, in the case where the gate insulating film is formed using silicon oxide by plasma enhanced CVD, a mixed gas of TEOS (tetraethyl orthosilicate) and O2 is used; reaction pressure is 40 Pa; substrate temperatures are 300° C. to 400° C.; and high-frequency (13.56 MHz) power densities are 0.5 W/cm2 to 0.8 W/cm2.
The gate insulating film 410 may be formed by oxidizing or nitriding surfaces of the semiconductor film 403, the semiconductor film 404, and the semiconductor film 405 by high-density plasma treatment. The high-density plasma treatment is performed by using, for example, a mixed gas of a rare gas such as He, Ar, Kr, or Xe, and oxygen, nitrogen oxide, ammonia, nitrogen, or hydrogen. In this case, by exciting plasma by introduction of microwaves, plasma with a low electron temperature and high density can be generated. The surfaces of the semiconductor film 403, the semiconductor film 404, and the semiconductor film 405 are oxidized or nitrided by oxygen radicals (OH radicals are included in some cases) or nitrogen radicals (NH radicals are included in some cases) generated by such high-density plasma, so that an insulating film having a thickness of 1 nm to 20 nm, typically 5 nm to 10 nm is formed so as to be in contact with the semiconductor film 403, the semiconductor film 404, and the semiconductor film 405. The insulating film having a thickness of 5 nm to 10 nm is used as the gate insulating film 410.
In addition, although the gate electrode 413, the gate electrode 414, the gate electrode 415, and the electrode 416 are formed using the stacked two conductive films 411 and 412 in this embodiment, one embodiment in this specification is not limited to this structure. Instead of the conductive films 411 and 412, a single-layer conductive film or a multilayer conductive film in which three or more layers are stacked may be used. In the case of using a three-layer structure in which three or more conductive films are stacked, a stack of a molybdenum film, an aluminum film, and a molybdenum film may be used.
For the conductive film for forming the gate electrode 413, the gate electrode 414, the gate electrode 415, the electrode 416, tantalum (Ta), tungsten (W), titanium (Ti), molybdenum (Mo), aluminum (Al), copper (Cu), chromium (Cr), niobium (Nb), or the like can be used. Alternatively, an alloy whose main component is any of the above metals or a compound containing any of the above metals can be used. Alternatively, the conductive film may be formed using a semiconductor such as polycrystalline silicon, in which a semiconductor film is doped with an impurity element which imparts conductivity, such as phosphorus.
In this embodiment, a tantalum nitride film or a tantalum (Ta) film is used for the conductive film 411, which is a first layer, and a tungsten (W) film is used for the conductive film 412, which is a second layer. As well as the example described in this embodiment, the following combination of two conductive films can be used: a tungsten nitride film and a tungsten film; a molybdenum nitride film and a molybdenum film; all aluminum film and a tantalum film; an aluminum film and a titanium film; and the like. Since tungsten and tantalum nitride have high heat resistance, heat treatment for thermal activation can be performed in a step after forming the two-layer conductive films. Alternatively, as the combination of the two-layer conductive films, a silicon film doped with an impurity which imparts n-type conductivity and a nickel silicide film, a Si film doped with an impurity which imparts n-type conductivity and a WSix film, or the like can be used.
CVD, sputtering, or the like can be used for forming the conductive films 411 and 412. In this embodiment, the conductive film 411, which is the first layer, is formed to a thickness of 20 nm to 100 nm and the conductive film 412, which is the second layer, is formed to a thickness of 100 nm to 400 nm.
Note that when the gate electrode 413, the gate electrode 414, the gate electrode 415, and the electrode 416 are formed, an optimal etching method and an optimal etchant may be selected as appropriate in accordance with materials used for the conductive films. Here, the conductive film 411 using tantalum nitride and the conductive film 412 using tungsten, which has smaller width than the conductive film 411 are formed by etching.
In addition, by using the conductive film 411 and the conductive film 412 formed through the first etching and the second etching as masks, impurity regions which function as the source regions, the drain regions, and the LDD regions can be separately formed in the semiconductor film 403, the semiconductor film 404, the semiconductor film 405, and the semiconductor film 450, without forming a mask additionally.
After the impurity regions are formed, the impurity regions may be activated by heat treatment. For example, after a 50-nm-thick silicon oxynitride film is formed, heat treatment may be performed at 550° C. for 4 hours in a nitrogen atmosphere.
Alternatively, after a silicon nitride film containing hydrogen is formed to a thickness of 100 nm, heat treatment may be performed at 410° C. for 1 hour in a nitrogen atmosphere so that the semiconductor film 403, the semiconductor film 404, and the semiconductor film 405 are hydrogenated. Alternatively, the semiconductor film 403, the semiconductor film 404, and the semiconductor film 405 may be hydrogenated in the following manner. Heat treatment is performed at 400° C. to 700° C. (preferably 500° C. to 600° C.) in a nitrogen atmosphere at an oxygen concentration of 1 ppm or less, preferably 0.1 ppm or less; and then, heat treatment is performed at 300° C. to 450° C. for 1 to 12 hours in an atmosphere containing hydrogen at 3 to 100%. This step enables dangling bonds to be terminated by thermally excited hydrogen. As a different hydrogenation method, plasma hydrogenation (using hydrogen excited by plasma) may be performed. Alternatively, activation treatment may be performed after an insulating film 417 which is to be formed later is formed.
For the heat treatment, a thermal annealing method using an annealing furnace, a laser annealing method, a rapid thermal annealing method (an RTA method), or the like can be used. By the heat treatment, not only hydrogenation but also activation of impurity elements which are added to the semiconductor film 403, the semiconductor film 404, and the semiconductor film 405 can be performed.
The above series of steps enable the formation of the n-channel transistors 406 and 407, the p-channel transistor 408, and the storage capacitor 409. Note that a fabrication method of the transistors is not limited to the above process.
Next, the insulating film 417 is formed so as to cover the transistor 406, the transistor 407, the transistor 408, and the storage capacitor 409 as shown in
Next, an insulating film 418 is formed over the insulating film 417 so as to cover the transistor 406, the transistor 407, the transistor 408, and the storage capacitor 409. An organic material having heat resistance, such as acrylic, polyimide, benzocyclobutene, polyamide, or epoxy, can be used for the insulating film 418. As well as the above organic material, a low dielectric constant material (a low-k material), a siloxane-based resin, silicon oxide, silicon nitride, silicon oxynitride, silicon nitride oxide, PSG (phosphosilicate glass), BPSG (borophosphosilicate glass), alumina, or the like can be used. A siloxane-based refers to a material in which a skeletal structure is formed by the bond of silicon (Si) and oxygen (O). A siloxane-based resin may have at least one kind of fluorine, a fluoro group, and an organic group (e.g., an alkyl group or an aromatic hydrocarbon group) as well as hydrogen, as a substituent. Note that the insulating film 418 may be formed by stacking a plurality of insulating films formed using such materials.
The insulating film 418 can be formed by CVD, sputtering, SOG, spin coating, dipping, spray coating, a droplet discharge method (e.g., an inkjet method, screen printing, or offset printing), a doctor knife, a roll coater, a curtain coater, a knife coater, or the like, depending on the material of the insulating film 418.
In this embodiment, the insulating film 417 and the insulating film 418 function as an interlayer insulating film; however, a single-layer insulating film may be used as the interlayer insulating film, or a stacked-layer insulating film having three or more layers may be used as the interlayer insulating film.
Next, as shown in
The conductive films 419 to 423 can be formed by CVD, sputtering, or the like. Specifically, for the conductive films 419 to 423, aluminum (Al), tungsten (W), titanium (Ti), tantalum (Ta), molybdenum (Mo), nickel (Ni), platinum (Pt), copper (Cu), gold (Au), silver (Ag), manganese (Mn), neodymium (Nd), carbon (C), silicon (Si), or the like can be used. Alternatively, an alloy whose main component is any of the above elements or a compound containing any of the above elements can be used. As the conductive films 419 to 423, a single-layer film of any of the above elements or a plurality of stacked films of any of the above elements can be used.
Examples of an alloy whose main component is aluminum include an alloy that contains aluminum as its main component and nickel, and an alloy that contains aluminum as its main component, nickel, and one or both of carbon and silicon. Since aluminum and aluminum silicon have low resistance values and are inexpensive, aluminum and aluminum silicon are suitable for materials used for the conductive films 419 to 423. In particular, aluminum silicon can prevent, more effectively than an aluminum film, formation of hillocks in resist baking performed when the conductive films 419 to 423 are patterned. Further, instead of silicon (Si), Cu may be mixed into the aluminum film at about 0.5%.
In this embodiment, a titanium film, an aluminum film, and a titanium film are stacked in that order from the insulating film 418 side. Then, these stacked films are patterned to form the conductive films 419 to 423.
Next, as shown in
In this embodiment, after a light-transmitting conductive film is formed using indium tin oxide containing silicon oxide (ITSO) by sputtering, the conductive film is patterned to form the pixel electrode 424. Note that a light-transmitting oxide conductive material other than ITSO, such as indium tin oxide (ITO), zinc oxide (ZnO), indium oxide zinc (IZO), or zinc oxide to which gallium is added (GZO), may be used for the pixel electrode 424. Alternatively, for the pixel electrode 424, as well as the light-transmitting oxide conductive material, a single-layer film containing one or more of titanium nitride, zirconium nitride, Ti, W, Ni, Pt, Cr, Ag, Al, and the like, a stack of a titanium nitride and a film whose main component is aluminum, a three-layer structure of a titanium nitride film, a film whose main component is aluminum, and a titanium nitride film, or the like can be used, for example. Note that in the case where light is extracted from the pixel electrode 424 side by using a material other than the light-transmitting oxide conductive material, the pixel electrode 424 is formed to such a thickness that light can transmit therethrough (preferably about 5 nm to 30 nm).
In the case of using ITSO for the pixel electrode 424, a target in which silicon oxide is contained in ITO at 2 to 10 weight percent can be used. Specifically, in this embodiment, by using a target containing In2O3, SnO2, and SiO2 at a weight percent ratio of 85:10:5, a conductive film which serves as the pixel electrode 424 is formed to a thickness of 105 nm, with a flow rate of Ar at 50 sccm, a flow rate of O2 at 3 sccm, a sputtering pressure of 0.4 Pa, a sputtering power of 1 kW, and a deposition rate of 30 nm/min.
After the conductive film which serves as the pixel electrode 424 is formed, the surface thereof may be cleaned or polished, for example, by CMP or by cleaning with a polyvinyl alcohol-based porous body so that the surface thereof may be flattened.
Next, as shown in
Next, before an electroluminescent layer 426 is formed, heat treatment under an air atmosphere or heat treatment (vacuum baking) under a vacuum atmosphere may be performed in order to remove moisture, oxygen, or the like adsorbed in the partition 425 and the pixel electrode 424. Specifically, heat treatment is performed at a substrate temperature of 200° C. to 450° C., preferably 250° C. to 300° C. for about 0.5 to 20 hours in a vacuum atmosphere. The heat treatment is preferably performed at a pressure of 3×10−7 or less Torr in a vacuum atmosphere, most preferably at a pressure of 3×10−8 Torr or less in a vacuum atmosphere if possible. In addition, in the case where the electroluminescent layer 426 is deposited after the heat treatment is performed in a vacuum atmosphere, the reliability of the display device can be further improved by putting the substrate in the vacuum atmosphere just before the deposition of the electroluminescent layer 426. Further, the pixel electrode 424 may be irradiated with an ultraviolet ray before or after the vacuum baking.
Next, as shown in
Alternatively, the electroluminescent layer 426 can be formed by a droplet discharge method by using any of a high-molecular organic compound, an intermediate-molecular organic compound (an organic compound having no sublimation property and having a molecular chain length of 10 μm or less), a low-molecular organic compound, and an inorganic compound. Further, an intermediate-molecular organic compound, a low-molecular organic compound, and an inorganic compound may be formed by vapor deposition.
Next, the common electrode 427 is formed so as to cover the electroluminescent layer 426. For the common electrode 427, a metal, an alloy, or an electroconductive compound, which generally has a small work function, a mixture thereof, or the like can be used. Specifically, the common electrode 427 can be formed using an alkali metal such as Li or Cs; an alkaline earth metal such as Mg, Ca, or Sr; an alloy containing any of these metals (e.g., Mg:Ag or Al:Li); or a rare earth metal such as Yb or Er. Further, by forming a layer containing a material having a high electron injection property so as to be in contact with the common electrode 427, a normal conductive film formed using aluminum, a light-transmitting oxide conductive material, or the like can be used.
The pixel electrode 424, the electroluminescent layer 426, and the common electrode 427 overlap with each other in the opening portion of the partition 425, so that a light-emitting element 428 is formed.
Note that light from the light-emitting element 428 may be extracted from the pixel electrode 424 side, the common electrode 427 side, or both sides. In accordance with an objective structure among the three structures described above, the material and the thickness of each of the pixel electrode 424 and the common electrode 427 are selected.
Note that an insulating film may be formed over the common electrode 427 after the light-emitting element 428 is formed. As the insulating film, a film through which a substance that causes increase in deterioration of a light-emitting element, such as moisture or oxygen, penetrates in smaller amount than those of other insulating films is used. Typically, for example, a DLC film, a carbon nitride film, a silicon nitride which is formed by RF sputtering, or the like is preferably used. Alternatively, the above film through which a substance such as moisture or oxygen penetrates in smaller amount and a film through which a substance such as moisture or oxygen penetrates in larger amount than that of the film are stacked so that the films can be used as the above insulating film.
Note that in practice, after the formation of the display device reach the state shown in
The above process enables the display device that is one embodiment of the present invention to be fabricated.
Note that although the fabrication method of the semiconductor element in the pixel area is described in this embodiment, a transistor used for a driver circuit or an integrated circuit can be formed together with the transistors in the pixel area. In this case, it is not necessary that the thickness of the gate insulating film 410 be the same in all of the transistors in the pixel area and the transistor used for the driver circuit or the integrated circuit. For example, in the transistor used for the driver circuit or the integrated circuit, which needs to be operated at high speed, the thickness of the gate insulating film 410 may be smaller than that of the transistors in the pixel area.
Further, by using an SOI (silicon on insulator) substrate, a single crystal semiconductor can be used for the semiconductor element. An SOI substrate can be fabricated using, for example, an attachment method such as UNIBOND (registered trademark) typified by Smart Cut (registered trademark), epitaxial layer transfer (ELTRAN), a dielectric separation method, or plasma assisted chemical etching (PACE); separation by implanted oxygen (SIMOX); or the like.
By transferring the semiconductor element fabricated using the above method to a flexible substrate such as a plastic substrate, the display device may be formed. Examples of the transferring method include: a method by which a metal oxide film is formed between the substrate and the semiconductor element and the metal oxide film is weakened by crystallization so that the semiconductor element is separated from the substrate and transferred; a method by which an amorphous silicon film containing hydrogen is provided between the substrate and the semiconductor element and the amorphous silicon film is removed by laser light irradiation or etching so that the semiconductor element is separated from the substrate and transferred; and a method by which the substrate over which the semiconductor element is formed is mechanically removed or is removed by etching with a solution or a gas so that the semiconductor element is separated from the substrate and transferred. Note that the semiconductor element is preferably transferred before the light-emitting element is fabricated.
This embodiment can be implemented in combination as appropriate with any of the above-described embodiments.
The appearance of a display device that is one embodiment of the present invention will be described with reference to
A sealant 4020 is provided so as to surround a pixel area 4002, a signal line driver circuit 4003, a scan line driver circuit 4004, and a scan line driver circuit 4005 which are provided over a first substrate 4001. Further, a second substrate 4006 is provided over the pixel area 4002, the signal line driver circuit 4003, the scan line driver circuit 4004, and the scan line driver circuit 4005. Thus, the pixel area 4002, the signal line driver circuit 4003, the scan line driver circuit 4004, and the scan line driver circuit 4005 are sealed together with a filler 4007 between the first substrate 4001 and the second substrate 4006 with the sealant 4020.
Each of the pixel area 4002, the signal line driver circuit 4003, the scan line driver circuit 4004, and the scan line driver circuit 4005 which are formed over the first substrate 4001 has a plurality of transistors. In
In addition, part of a wiring 4017 which is connected to a source region or a drain region of the transistor 4009 is used as a pixel electrode of a light-emitting element 4011. Further, the light-emitting element 4011 includes a common electrode 4012 and an electroluminescent layer 4013 in addition to the pixel electrode. Note that the structure of the light-emitting element 4011 is not limited to the structure shown in this embodiment. Note that the structure of the light-emitting element 4011 is not limited to the structure shown in this embodiment. The structure of the light-emitting element 4011 can be changed as appropriate in accordance with the direction of light extracted from the light-emitting element 4011, polarity of the thin film transistor 4009, or the like.
Signals and voltages supplied to the signal line driver circuit 4003, the scan line driver circuit 4004, the scan line driver circuit 4005, or the pixel area 4002 are, although not shown in the cross-sectional view shown in
In this embodiment, the connection terminal 4016 is formed using the same conductive film as the common electrode 4012 included in the light-emitting element 4011. In addition, the lead wiring 4014 is formed using the same conductive film as the wiring 4017. Further, the lead wiring 4015 is formed using the same conductive film as gate electrodes of the transistor 4009, the transistor 4010, and the transistor 4008.
The connection terminal 4016 is electrically connected to a terminal of an FPC 4018 through an anisotropic conductive film 4019.
Note that for each of the first substrate 4001 and the second substrate 4006, glass, metal (typically stainless steel), ceramics, or plastics can be used. Note that the second substrate 4006 which is in a direction from which light from the light-emitting element 4011 is extracted needs to have a light-transmitting property. Thus, a light-transmitting material such as a glass plate, a plastic plate, a polyester film, or an acrylic film is preferably used for the second substrate 4006.
In addition, as well as inert gas such as nitrogen or argon, an ultraviolet curable resin or a thermosetting resin can be used for the filler 4007. In this embodiment, an example in which nitrogen is used for the filler 4007 is shown.
This embodiment can be implemented in combination as appropriate with any of the above-described embodiments.
It is possible to provide, as an example of a display device that is one embodiment of the present invention, a display device having a large screen, in which high-definition images can be displayed and power consumption can be reduced. Thus, a display device that is one embodiment of the present invention is preferably used for display devices, laptops, or image reproducing devices provided with recording media (typically devices which reproduce the content of recording media such as DVDs (digital versatile disc) and have displays for displaying the reproduced images). Further, examples of an electronic appliance which can use the display device that is one embodiment of the present invention include a cellular phone, a portable game machine, an e-book reader, a camera such as a video camera or a digital still camera, a goggle-type display (a head mounted display), a navigation system, and an audio reproducing device (e.g., a car audio or an audio component set). Specific examples of these electronic appliances are shown in
As described above, the display device that is one embodiment of the present invention is capable of extremely wide application and is applicable to all types of electronic appliances.
This embodiment can be implemented in combination as appropriate with any of the above-described embodiments.
This application is based on Japanese Patent Application serial no. 2010-010287 filed with Japan Patent Office on Jan. 20, 2010, the entire contents of which are hereby incorporated by reference.
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| Korean Office Action (Application No. 2011-0004805) dated Jul. 4, 2017. |
| Number | Date | Country | |
|---|---|---|---|
| 20110175862 A1 | Jul 2011 | US |
