Claims
- 1. A method of forming a ferroelectric film comprising:
applying pulsed laser light or pulsed lamp light to an amorphous oxide film formed over a substrate to form microcrystalline nuclei of oxide in the oxide film, forming a light transmission and/or absorption film over the oxide film, and applying pulsed laser light or pulsed lamp light to the oxide film from above the light transmission and/or absorption film to crystallize the oxide, so that a ferroelectric film is formed.
- 2. A method of forming a ferroelectric film comprising:
applying pulsed laser light only to a predetermined portion of an amorphous oxide film formed over a substrate to form microcrystalline nuclei of oxide in the oxide film, forming a light transmission and/or absorption film over the oxide film, and applying pulsed lamp light to the oxide film from above the light transmission and/or absorption film to crystallize the oxide in the predetermined portion, so that a ferroelectric film is formed.
- 3. A method of forming a ferroelectric film comprising:
applying pulsed lamp light to an amorphous oxide film formed over a substrate to form microcrystalline nuclei of oxide in the oxide film, forming a light transmission and/or absorption film over the oxide film, and applying pulsed laser light only to a predetermined portion of the oxide film from above the light transmission and/or absorption film to crystallize the oxide in the predetermined portion, so that a ferroelectric film is formed.
- 4. A method of forming a ferroelectric film comprising:
applying pulsed laser light or pulsed lamp light to an amorphous oxide film formed over a substrate, after the applying of pulsed laser light or pulsed lamp light to the amorphous oxide film, forming a light transmission and/or absorption film over the oxide film, and applying pulsed laser light or pulsed lamp light to the oxide film from above the light transmission and/or absorption film to crystallize the oxide, so that a ferroelectric film is formed.
- 5. The method of forming a ferroelectric film as defined in claim 2, comprising:
forming a light blocking film over the light transmission and/or absorption film disposed over the oxide film in a portion other than the predetermined portion.
- 6. The method of forming a ferroelectric film as defined in claim 2,
wherein the light transmission and/or absorption film is formed over the oxide film only in the predetermined portion, and wherein a light blocking film is formed over the oxide film in a portion other than the predetermined portion.
- 7. The method of forming a ferroelectric film as defined in claim 1,
wherein the light transmission and/or absorption film is formed by using an oxide conductor.
- 8. The method of forming a ferroelectric film as defined in claim 1,
wherein the amorphous oxide film is formed over the substrate with at least a light reflection film interposed in between.
- 9. The method of forming a ferroelectric film as defined in claim 1,
wherein intensity of light applied to the amorphous oxide film differs from intensity of light applied for crystallizing the oxide.
- 10. The method of forming a ferroelectric film as defined in claim 1,
wherein a number of pulses of light applied to the amorphous oxide film differs from a number of pulses of light applied for crystallizing the oxide.
- 11. The method of forming a ferroelectric film as defined in claim 1,
wherein the ferroelectric film has a perovskite crystal structure.
- 12. The method of forming a ferroelectric film as defined in claim 1,
wherein the ferroelectric film has a layered perovskite crystal structure.
- 13. A method of manufacturing a ferroelectric memory comprising forming a ferroelectric layer by using the method of forming a ferroelectric film as defined in any one of claims 1 to 12.
- 14. The method of manufacturing a ferroelectric memory as defined in claim 13, comprising:
etching at least the oxide film including the microcrystalline nuclei when forming the ferroelectric layer, wherein the etching is performed at least before crystallizing the oxide.
- 15. The method of manufacturing a ferroelectric memory as defined in claim 13,
wherein the light transmission and/or absorption film provided over the ferroelectric layer is formed as an electrode when forming the ferroelectric layer.
- 16. A ferroelectric memory manufactured by using the method of manufacturing a ferroelectric memory as defined in any one of claims 13 to 15.
- 17. The ferroelectric memory as defined in claim 16,
wherein an insulating layer disposed around the ferroelectric layer includes the microcrystalline nuclei of oxide.
- 18. The ferroelectric memory: as defined in claim 16,
wherein an electrode disposed under the ferroelectric layer has a property of reflecting light.
- 19. A ferroelectric memory comprising a plurality of memory cell arrays stacked over a substrate,
wherein each of the memory cell arrays comprises: a plurality of stripe-shaped lower electrodes and a plurality of stripe-shaped upper electrodes, the lower electrodes and the upper electrodes being disposed so as to intersect each other, and a ferroelectric layer disposed between the lower electrodes and the upper electrodes at least in intersecting portions of the lower electrodes and the upper electrodes, and wherein the lower electrodes and the upper electrodes are disposed in a manner that intersecting portions of the lower electrodes and the upper electrodes in adjacent two memory cell arrays among the memory cell arrays do not overlap each other.
- 20. A method of manufacturing a ferroelectric memory, comprising:
forming the upper electrodes of the memory cell arrays included in the ferroelectric memory as defined in claim 19 as light transmission and/or absorption films, and forming the ferroelectric layer of the ferroelectric memory by using the method of forming a ferroelectric film as defined in any one of claims 1 to 12.
- 21. The method of manufacturing a ferroelectric memory as defined in claim 20,
wherein, after stacking at least two of the memory cell arrays, the ferroelectric layer is formed by crystallizing oxide in each of the memory cell arrays.
- 22. A method of manufacturing a semiconductor device which includes a memory cell region having a ferroelectric layer and a circuit region, the method comprising:
forming the memory cell region in a predetermined area over a substrate, and forming the circuit region over the substrate in an area other than the memory cell region, wherein, when forming the circuit region, a light blocking film is formed over the circuit region, and wherein, when forming the memory cell region, the ferroelectric layer is formed by using the method of manufacturing a ferroelectric memory as defined in any one of claims 13 to 15, 20, and 21 after forming at least the light blocking film.
- 23. A semiconductor device comprising:
a memory cell region including a ferroelectric layer and a circuit region which is disposed over a substrate in an area other than the memory cell region, the semiconductor device being manufactured by using the method of manufacturing a semiconductor device as defined in claim 22.
Priority Claims (1)
Number |
Date |
Country |
Kind |
2002-236568 |
Aug 2002 |
JP |
|
Parent Case Info
[0001] Japanese Patent Application No. 2002-236568 filed on Aug. 14, 2002, is hereby incorporated by reference in its entirety.