InN/TiO2 photosensitized electrode

Abstract

The present invention is a photosensitized electrode which absorbs sun light to obtain pairs of separated electron and hole. The photosensitized electrode is fabricated with simple procedure and has low cost. The electrode has excellent chemical resistance and is fitted to be applied in a solar cell device with enhanced sun-light absorbing ability. The present invention can be applied in an optoelectronic device or a hydrogen generator device too.

Description

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention will be better understood from the following detailed description of the preferred embodiment according to the present invention, taken in conjunction with the accompanying drawings, in which

FIG. 1 is a structural view showing a preferred embodiment according to the present invention;

FIG. 2 is a flow view showing the fabricating of the photosensitized electrode;

FIG. 2A, FIG. 2B, FIG. 2C and FIG. 2D are views showing step (a), step (b), step (c), and step (d) for fabricating the photosensitized electrode, respectively; and

FIG. 3 is a view showing a state of use of the electrode.

Claims

1. An InN (indium nitride)/TiO2(titanium oxide) photosensitized electrode, comprising: a substrate;a TiO2 film, said TiO2 film covering on said substrate; andan InN photosensitive layer, said InN photosensitive layer coating on said InP photosensitive layer.

2. The photosensitized electrode according to claim 1, wherein said substrate is a transparent conductive substrate selected from a group consisting of an indium tin oxide (ITO) glass and an fluorine tin oxide (FTO) glass.

3. The photosensitized electrode according to claim 1, wherein said TiO2 film has a nanoparticle structure.

4. The photosensitized electrode according to claim 3, wherein said nanoparticle has a diameter between 7 nm (nanometer) and 50 nm.

5. The photosensitized electrode according to claim 1, wherein said TiO2 film has a thickness between 100 nm and 100000 nm.

6. The photosensitized electrode according to claim 1, wherein said InN photosensitive layer has a thickness between 1 nm and 10000 nm.

7. The photosensitized electrode according to claim 1, wherein said InN photosensitive layer absorbs light having a wavelength between 390 nm and 600 nm.

8. The photosensitized electrode according to claim 1, said photosensitized electrode having a fabrication method comprising steps of: a. placing a substrate in a reaction chamber, said substrate coated with a TiO2 film;b. introducing a hydrazoic acid (HN3) and a compound containing indium into said reaction chamber;c. illuminating said TiO2 film with an ultraviolet (UV) light; andd. obtaining an InN photosensitive layer coated on said TiO2 film.

9. The method according to claim 8, wherein said compound containing indium is selected from a group consisting of a trimethylindium, a triethylindium, a indium-containing metallo-organic precursor and a combination of indium-containing metallo-organic precursors.

10. The method according to claim 9, wherein said hydrazoic acid is a compound containing nitrogen.

11. The method according to claim 8, wherein a ratio of said HN3 to said compound containing indium is between 1 and 10.

12. The method according to claim 8, wherein said TiO2 film bears a temperature between 600° C. (Celsius degrees) and 900° C.

13. The method according to claim 8, wherein a period of time for processing all steps of said step (a) until step (d) is between 1 hr (hour) and 8 hr.

14. The method according to claim 8, wherein said UV light is obtained from a light source selected from a group consisting of a continuous UV lamp, an excimer laser, a semiconductor laser, a gas laser, a solid-state laser, a liquid laser, a chemical laser and a free-electron laser.