The present invention relates to a light emitting device including an organic functional layer.
Interest in a display device using a self-light emitting element such as an organic light emitting diode (OLED) has increased. In the display device using the OLED, in order to prevent deterioration of image quality caused by characteristic variations of a driving transistor forming a pixel circuit, the threshold of the driving transistor is generally corrected using a capacitive element. As the capacitive element, for example, a Metal-Insulator-Metal (MIM) capacitor buried in a wiring structure connecting the transistor provided on a semiconductor substrate and various kinds of signal lines and the like can be used. In recent years, in the display device, the pixel pitch decreases as the resolution increases, and the wiring density increases accordingly. Therefore, the arrangement position and size of the MIM capacitor are readily influenced by the position of a via connecting wiring patterns arranged in different layers and the layout of the wiring patterns, and it becomes difficult to form a sufficient MIM capacity. Japanese Patent Laid-Open No. 2009-200336 describes a self-light emitting type display device in which the anode electrode of an organic light emitting diode is caused to also function as the upper electrode of a capacitive element.
In the display device described in Japanese Patent Laid-Open No. 2009-200336, since the anode electrode of the organic light emitting diode is caused to function as the upper electrode of the capacitive element, independent potentials cannot be respectively applied to the anode electrode and the upper electrode.
The present invention provides a technique advantageous in applying different potentials to the anode of an organic light emitting element and the electrode of a capacitive element, respectively, and increasing the capacitance value of the capacitive element.
One of aspects of the present invention provides a light emitting device comprising: an organic light emitting element arranged above a substrate and including an anode, an organic functional layer including an organic light emitting layer, and a cathode; a capacitive element including an upper electrode arranged between the substrate and the organic light emitting element so as to reflect light entering from the organic functional layer via the anode, a dielectric layer arranged between the substrate and the upper electrode, and a lower electrode arranged between the substrate and the dielectric layer; and an insulating layer arranged between the capacitive element and the organic light emitting element, wherein the upper electrode is electrically insulated from the anode, and a distance between the upper electrode and the organic light emitting layer is adjusted so as to improve efficiency of light extraction from the organic light emitting layer.
Further features of the present invention will become apparent from the following description of exemplary embodiments with reference to the attached drawings.
Hereinafter, embodiments will be described in detail with reference to the attached drawings. Note, the following embodiments are not intended to limit the scope of the claimed invention. Multiple features are described in the embodiments, but limitation is not made to an invention that requires all such features, and multiple such features may be combined as appropriate. Furthermore, in the attached drawings, the same reference numerals are given to the same or similar configurations, and redundant description thereof is omitted.
The light emitting device 100 includes a substrate 101 including a principal surface PS. The substrate 101 is, for example, a base using a semiconductor material such as silicon. A plurality of elements, such as a transistor 102 configured to control light emission (for example, the luminance, the light emission time, and the like) in each pixel 151, can be arranged on the principal surface PS of the substrate 101. An interlayer insulating layer 103 can be arranged above the principal surface PS of the substrate 101 so as to cover the plurality of elements such as the transistor 102. As the material of the interlayer insulating layer 103, for example, an insulating material such as silicon dioxide (SiO2) can be selected. In the interlayer insulating layer 103, a wiring layer 104 including a conductive pattern can be arranged. As the material of the conductive pattern in the wiring layer 104, for example, an aluminum copper alloy or the like is used.
In the arrangement shown in
A capacitive element MIM having an MIM structure is arranged above the interlayer insulating layer 103. The capacitive element MIM can include a lower electrode 106 electrically connected to the conductive plug 105, a dielectric layer 107, and an upper electrode 108 electrically connected to another conductive plug 105. It may be understood that the upper electrode 108 is arranged between the substrate 101 and the organic light emitting element EL, the dielectric layer 107 is arranged between the substrate 101 and the upper electrode 108, and the lower electrode 106 is arranged between the substrate 101 and the dielectric layer 107. One of the upper electrode 108 and the lower electrode 106 can be electrically connected to the gate of the transistor 102. In an example, the maximum thickness of the upper electrode 108 is larger than the maximum thickness of the lower electrode 106.
The lower electrode 106 can be formed of, for example, titanium nitride (TiN) or the like. The dielectric layer 107 can be formed of the same material as the interlayer insulating layer 103, for example, an insulating material such as silicon dioxide (SiO2). Alternatively, the dielectric layer 107 may be formed of an insulating material having a higher dielectric constant, such as silicon nitride, hafnium oxide, aluminum oxide, or zirconium oxide. Alternatively, the dielectric layer 107 may have a structure in which two or more films are stacked.
The upper electrode layer where the upper electrode 108 is arranged can include, in addition to the upper electrode 108 as a constituent element of the capacitive element MIM of the MIM structure, a conductive pattern for wiring, for example, a connection pattern 120 to be described later. The connection pattern 120 is electrically insulated from the connection pattern 120. The upper electrode 108 can also function as a reflective layer that reflects light generated in the organic functional layer 112 upward (in the direction from the principal surface PS of the substrate 101 toward the organic functional layer 112). That is, the upper electrode 108 is arranged so as to reflect light entering from the organic functional layer 112 via the anode 110. Hence, the upper electrode 108 can be formed of, for example, pure aluminum with a high reflectance, an aluminum alloy such as an aluminum copper alloy, or the like. In the arrangement as described above, the conductive layer arranged above the wiring layer 104 is used as the reflective layer and the upper electrode 108 of the capacitive element MIM. To arrange a large-area capacitive element without being influenced by the arrangement of the conductive pattern for wiring and the like, this embodiment is more advantageous than the conventional method which buries the MIM capacitive element in the interlayer insulating film.
An optical adjustment layer 109 can be arranged above the upper electrode 108. The optical adjustment layer 109 can be formed by an insulating layer. With the structure in which light generated in the organic functional layer 112 and reaching the upper electrode 108 via the optical adjustment layer 109 is reflected by the upper electrode 108, it is possible to cause light of a specific wavelength band to resonate. For example, when the light emitting device 100 is configured as a display device that displays three colors of R, G, and B, the thickness of at least a part of the optical adjustment layer 109 can be adjusted so that light of the wavelength of each color resonates between the organic functional layer 112 and the upper surface of the upper electrode 108. The thickness of the optical adjustment layer 109 formed by the insulating layer can be, for example, in a range of 10 nm (inclusive) to 250 nm (inclusive). In other words, the distance between the upper electrode 108 and the organic light emitting layer is adjusted so as to improve the efficiency of light extraction from the organic light emitting layer.
The organic light emitting element EL can be arranged on the optical adjustment layer 109. The organic light emitting element EL can include an anode (transparent lower electrode) 110, the organic functional layer 112 including the organic light emitting layer, and a cathode (transparent upper electrode) 114. The organic functional layer 112 can be arranged between the cathode 114 and the substrate 101 (or the capacitive element MIM), and the anode 110 can be arranged between the organic functional layer 112 and the substrate 101 (or the capacitive element MIM). The anode 110 is electrically connected to the drain of the transistor 102 via a conductive path, and can be driven by the transistor 102. The conductive path can include, for example, the conductive plug 105, the conductive pattern arranged in the wiring layer 104, and a connection pattern 120 arranged in the upper electrode layer in which the upper electrode 108 is arranged. The anode 110 is an electrode that supplies, to the organic functional layer 112, a current for causing the light emitting layer of the organic functional layer 112 to emit light. The anode 110 can be formed of, for example, a transparent material such as indium tin oxide (ITO) or indium zinc oxide (IZO).
The peripheral portion of the anode 110 can be covered with an insulating layer 111 including an opening 113 that exposes the central portion of the anode 110. In an orthogonal projection with respect to the principal surface PS of the substrate 101, the opening 113 overlaps the upper electrode 108. In the orthogonal projection, the opening 113 overlaps the lower electrode 106. Further, in the orthogonal projection, the opening 113 can be configured to fit within the region of the upper electrode 108. Furthermore, in the orthogonal projection, the opening 113 can be configured to fit within the region of the lower electrode 106. The anode 110 contacts the organic functional layer 112 in the opening 113.
The cathode 114 is arranged above the organic functional layer 112. The cathode 114 can be formed of, for example, a transparent material such as indium tin oxide (ITO) or indium zinc oxide (IZO). As exemplarily shown in
A sealing layer 115 can be arranged above the cathode 114. The sealing layer 115 can be formed of, for example, a material such as silicon nitride. The sealing layer 115 seals respective constituent elements such as the transistor 102 formed in the substrate 101 and the organic functional layer 112, and suppresses invasion of outer air and water into them.
Color filters 116 can be arranged above the sealing layer 115. In an example, the light emitting layer included in the organic functional layer 112 generate white light, and the color filters 116 convert the white light into a plurality of colors. In an example, a color filter 116b that transmits blue light is provided in the pixel 151 that generates blue light, a color filter 116g that transmits green light is provided in the pixel that generates green light, and a color filter 116r that transmits red light is provided in the pixel that generates red light. A microlens ML may be arranged on the color filter 116.
Next, with reference to
After the opening 113 is formed, the organic functional layer 112 including the light emitting layer can be formed by a vacuum deposition method using a vapor deposition mask so as to contact the anode 110 (the portion thereof exposed by the opening 113). Further, the cathode 114, the sealing layer 115, the color filters 116 can be sequentially formed on the organic functional layer 112. With the steps described above, the light emitting device 100 can be formed.
In this embodiment, since the upper electrode 108 of the capacitive element MIM is located above the wiring layer 104 where the main wiring pattern is arranged, the arrangement of the conductive pattern has little influence on the upper electrode 108. Therefore, this embodiment is advantageous in increasing the capacitance of the capacitive element MIM. Further, according to this embodiment, it is possible to connect different nodes to the anode 110 of the organic light emitting element EL and the upper electrode 108 of the capacitive element MIM, respectively. This improves the degree of freedom in design of the circuit forming the pixel.
In addition, since the upper electrode 108 has a function of reflecting light generated in the organic functional layer 112, an effect of increasing the light emission efficiency of the light emitting device 100 can be obtained. Further, owing to the optical adjustment layer 109 adjusted to the thickness that causes light generated in the organic functional layer 112 to resonate by reflection by the upper electrode 108, an effect of increasing the light emission efficiency of light of a specific wavelength band is obtained.
Here, with reference to
A plurality of the capacitive elements MIM may be arranged in one pixel.
The driving transistor Td is preferably formed by a PMOS. When the transistor Td is operated as a source follower, the magnitude of the current flowing through the organic light emitting element EL can be controlled. The drain of the driving transistor Td can be electrically connected to the anode 110 of the organic light emitting element EL. The capacitive element Cs can be connected between the gate and source of the driving transistor Td. The capacitive element Cs has a function of receiving a signal voltage from a Data line and holding the voltage of the threshold level of the driving transistor Td, thereby correcting the difference of the threshold of the driving transistor Td which changes for each pixel. The anode of the organic light emitting element EL connected to the drain terminal of the driving transistor Td and the capacitive element Cs are electrically connected to different circuit nodes. Accordingly, it is possible to apply different potentials to the upper electrode of the capacitive element Cs and the anode of the organic light emitting element EL, respectively.
The arrangement of the pixel is not limited to the examples described above, and may be another arrangement. For example, the pixel can include a reset switch.
Hereinafter, respective constituent elements of the light emitting element will be exemplarily described.
Quartz, glass, a silicon wafer, a resin, a metal, or the like may be used as a substrate. Furthermore, a switching element such as a transistor and a wiring may be provided on the substrate, and an insulating layer may be provided thereon. The insulating layer may be made of any material as long as a contact hole can be formed so that the wiring can be formed between the insulating layer and the lower electrode, the upper electrode, and the anode and insulation from the unconnected wiring can be ensured. For example, a resin such as polyimide, silicon oxide, silicon nitride, or the like can be used.
An insulating layer (pixel isolation layer) for isolating pixels is formed of a silicon nitride (SiN) film, a silicon oxynitride (SiON) film, or a silicon oxide (SiO) film formed using a chemical vapor deposition method (CVD method). In order to increase the resistance in the in-plane direction of the organic compound layer, the organic compound layer, particularly, the hole transport layer is preferably deposited so as to have a small film thickness on the side wall of the pixel isolation layer. More specifically, by increasing the taper angle of the side wall of the pixel isolation layer or the film thickness of the pixel isolation layer to increase vignetting during vapor deposition, the organic compound layer can be deposited so as to have a small film thickness on the side wall of the pixel isolation layer.
On the other hand, it is preferable to adjust the taper angle of the side wall of the pixel isolation layer or the film thickness of the pixel isolation layer to the extent not forming a gap in the protective layer formed on the pixel isolation layer. If no gap is formed in the protective layer, generation of defects in the protective layer can be reduced. Since generation of defects in the protective layer is reduced, a decrease in reliability due to generation of a dark spot or occurrence of a conductive failure of the second electrode can be reduced.
The organic functional layer may be formed by a single layer or a plurality of layers. If the organic functional layer includes a plurality of layers, the layers can be called a hole injection layer, a hole transport layer, an electron blocking layer, a light emitting layer, a hole blocking layer, an electron transport layer, and an electron injection layer in accordance with the functions of the layers. The organic functional layer is mainly formed from an organic compound but may contain inorganic atoms and an inorganic compound. For example, the organic functional layer may contain copper, lithium, magnesium, aluminum, iridium, platinum, molybdenum, zinc, or the like. The organic compound layer can be arranged between the first and second electrodes, and may be arranged in contact with the first and second electrodes.
A protective layer may be provided on the cathode. For example, by adhering glass provided with a moisture absorbing agent on the cathode, permeation of water or the like into the organic functional layer can be reduced and occurrence of display defects can be reduced. Furthermore, as another embodiment, a passivation film made of silicon nitride or the like may be provided on the cathode to reduce permeation of water or the like into the organic functional layer. For example, the protective layer can be formed by forming the cathode, transferring it to another chamber without breaking the vacuum, and forming a silicon nitride film having a thickness of 2 μm by a CVD method. The protective layer may be provided using an atomic deposition method (ALD method) after forming a film using the CVD method. The material of the film by the ALD method is not limited but can be silicon nitride, silicon oxide, aluminum oxide, or the like. A silicon nitride film may further be formed by the CVD method on the film formed by the ALD method. The film formed by the ALD method may have a film thickness smaller than that of the film formed by the CVD method. More specifically, the film thickness of the film formed by the ALD method may be 50% or less, or 10% or less.
A color filter may be provided on the protective layer. For example, a color filter considering the size of the organic light emitting element may be provided on another substrate, and this substrate may be bonded to the substrate with the organic light emitting element provided thereon. Alternatively, a color filter may be patterned on the above-described protective layer using a photolithography technique. The color filter can be formed from a polymeric material.
A planarizing layer may be provided between the color filter and the protective layer. The planarizing layer is provided to reduce unevenness of the lower layer. The planarizing layer may be called a material resin layer without limiting the purpose of the layer. The planarizing layer can be formed from an organic compound, and can be made of a low-molecular material or a polymeric material. However, a polymetric material is preferable.
The planarizing layers may be provided above and below the color filter, and the same or different materials may be used for them. More specifically, examples of the material include polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin.
The light emitting device can include an optical member such as a microlens on the light emission side. The microlens can be made of acrylic resin, epoxy resin, or the like. The microlens can aim to increase the amount of light extracted from the light emitting device and control the direction of light to be extracted. The microlens can have a hemispherical shape. If the microlens has a hemispherical shape, among tangents contacting the hemisphere, there is a tangent parallel to the insulating layer, and the contact between the tangent and the hemisphere is the vertex of the microlens. The vertex of the microlens can be decided in the same manner even in an arbitrary sectional view. That is, among tangents contacting the semicircle of the microlens in a sectional view, there is a tangent parallel to the insulating layer, and the contact between the tangent and the semicircle is the vertex of the microlens.
Furthermore, the middle point of the microlens can also be defined. In the section of the microlens, a line segment from a point at which an arc shape ends to a point at which another arc shape ends is assumed, and the middle point of the line segment can be called the middle point of the microlens. A section for determining the vertex and the middle point may be a section perpendicular to the insulating layer.
The microlens includes a first surface including a convex portion and a second surface opposite to the first surface. The second surface is preferably arranged on the functional layer side of the first surface. For this arrangement, the microlens is required to be formed on the light emitting device. If the functional layer is an organic layer, it is preferable to avoid a process which produces high temperature in the manufacturing step. In addition, if it is configured to arrange the second surface on the functional layer side of the first surface, all the glass transition temperatures of organic compound forming the organic layer are preferably 100° C. or more, and more preferably 130° C. or more.
The organic functional layer (hole injection layer, hole transport layer, electron blocking layer, light emitting layer, hole blocking layer, electron transport layer, electron injection layer, and the like) can be formed by, for example, a dry process using a vacuum deposition method, an ionization deposition method, a sputtering method, a plasma method, or the like. Instead of the dry process, a wet process that forms a layer by dissolving a solute in an appropriate solvent and using a well-known coating method (for example, a spin coating method, a dipping method, a casting method, an LB method, an inkjet method, or the like) can be used.
Here, when the layer is formed by a vacuum deposition method, a solution coating method, or the like, crystallization or the like hardly occurs and excellent temporal stability is obtained. Furthermore, when the layer is formed using a coating method, it is possible to form the film in combination with a suitable binder resin.
Examples of the binder resin include polyvinyl carbazole resin, polycarbonate resin, polyester resin, ABS resin, acrylic resin, polyimide resin, phenol resin, epoxy resin, silicone resin, and urea resin. However, the binder resin is not limited to them.
One of these binder resins may be used singly as a homopolymer or a copolymer, or two or more of them may be used in combination. Furthermore, additives such as a well-known plasticizer, antioxidant, and an ultraviolet absorber may also be used as needed.
The light emitting device may include a pixel circuit connected to the light emitting element. The pixel circuit may be an active matrix circuit that individually controls light emission of a plurality of light emitting elements. The active matrix circuit may be a voltage or current programing circuit. A driving circuit includes a pixel circuit for each pixel. The pixel circuit can include a light emitting element, a transistor for controlling light emission luminance of the light emitting element, a transistor for controlling a light emission timing, a capacitor for holding the gate voltage of the transistor for controlling the light emission luminance, and a transistor for connection to GND without intervention of the light emitting element.
The light emitting device includes a display region and a peripheral region arranged around the display region. The light emitting device includes the pixel circuit in the display region and a display control circuit in the peripheral region. The mobility of the transistor forming the pixel circuit may be smaller than that of a transistor forming the display control circuit.
The slope of the current-voltage characteristic of the transistor forming the pixel circuit may be smaller than that of the current-voltage characteristic of the transistor forming the display control circuit. The slope of the current-voltage characteristic can be measured by a so-called Vg-Ig characteristic.
The transistor forming the pixel circuit is a transistor connected to the light emitting element such as the first light emitting element.
The light emitting device includes a plurality of pixels. Each pixel includes sub-pixels that emit light components of different colors. The sub-pixels include, for example, R, G, and B emission colors, respectively. In each pixel, a region also called a pixel opening emits light. This region is the same as the first region. The pixel opening can have a size of 5 μm (inclusive) to 15 μm (inclusive). More specifically, the pixel opening can have a size of 11 μm, 9.5 μm, 7.4 μm, 6.4 μm, or the like. A distance between the sub-pixels can be 10 μm or less, and can be, more specifically, 8 μm, 7.4 μm, or 6.4 μm.
The pixels can have a known arrangement form in a plan view. For example, the pixels may have a stripe arrangement, a delta arrangement, a pentile arrangement, or a Bayer arrangement. The shape of each sub-pixel in a plan view may be any known shape. For example, a quadrangle such as a rectangle or a rhombus, a hexagon, or the like may be possible. A shape which is not a correct shape but is close to a rectangle is included in a rectangle, as a matter of course. The shape of the sub-pixel and the pixel arrangement can be used in combination.
The light emitting device according to one aspect of the present invention can be incorporated in various devices. The device incorporating the light emitting device according to one aspect of the present invention can be called an assembly. In addition to the light emitting device according to one aspect of the present invention, the assembly can include a control circuit that controls the light emitting device. The control circuit may be a printed wiring board including a semiconductor chip, may be a semiconductor chip, or may be incorporated into the same chip as the light emitting device. The assembly can function as at least one of a display device, an image capturing device, an illumination device, an image forming device, a moving body, and a wearable device. The illumination device can also include a mode such as a backlight.
The display device may be an image information processing device that includes an image input unit for inputting image information from an area CCD, a linear CCD, a memory card, or the like, and an information processing unit for processing the input information, and displays the input image on a display unit.
In addition, a display unit included in an image capturing device or an inkjet printer may have a touch panel function. The driving type of the touch panel function may be an infrared type, a capacitance type, a resistive film type, or an electromagnetic induction type, and is not particularly limited. The display device may be used for the display unit of a multifunction printer.
Next, specific examples of the assembly will be described with reference to drawings.
The display device 1000 can include color filters of red, green, and blue. The color filters of red, green, and blue can be arranged in a delta array. The display device 1000 can also be used for a display unit of a portable terminal. At this time, the display unit can have both a display function and an operation function. Examples of the portable terminal are a portable phone such as a smartphone, a tablet, and a head mounted display.
The display device 1000 can be used for a display unit of an image capturing device including a fixed or detachable optical unit including a plurality of lenses, and an image sensor for receiving light having passed through the optical unit. The image capturing device can include a display unit for displaying information acquired by the image sensor. In addition, the display unit can be either a display unit exposed outside the image capturing device, or a display unit arranged in the finder. The image capturing device can be a digital camera or a digital video camera.
The timing suitable for image capturing is a very short time, so the information is preferably displayed as soon as possible. The display device using the organic light emitting element can be used for the apparatuses that require a high display speed more preferably than for the liquid crystal display device.
The image capturing device 1100 includes an optical unit (not shown). This optical unit includes a plurality of lenses, and forms an image on an image sensor that is accommodated in the housing 1104. The focal points of the plurality of lenses can be adjusted by adjusting the relative positions. This operation can also automatically be performed. The image capturing device may be called a photoelectric conversion device. Instead of sequentially capturing an image, the photoelectric conversion device can include, as an image capturing method, a method of detecting the difference from a previous image, a method of extracting an image from an always recorded image, or the like.
Each of
In addition, the frame 1301 and the display unit 1302 may be bent. The radius of curvature can be 5,000 mm (inclusive) to 6,000 mm (inclusive).
The illumination device is, for example, a device for illuminating the interior of the room. The illumination device may emit white light, natural white light, or light of any color from blue to red. The illumination device can also include a light control circuit for controlling these light components. The illumination device can also include the organic light emitting element according to the present invention and a power supply circuit connected to the organic light emitting element. The power supply circuit is a circuit for converting an AC voltage into a DC voltage. White has a color temperature of 4,200 K, and natural white has a color temperature of 5,000 K. The illumination device may also include a color filter.
In addition, the illumination device according to this embodiment may include a heat radiation unit. The heat radiation unit radiates the internal heat of the device to the outside of the device, and examples are a metal having a high specific heat and liquid silicon.
The taillight 1501 can include the light emitting device 100. The taillight can include a protection member for protecting the organic EL element. The material of the protection member is not limited as long as the material is a transparent material with a strength that is high to some extent, and is preferably polycarbonate. A furandicarboxylic acid derivative, an acrylonitrile derivative, or the like may be mixed in polycarbonate.
The automobile 1500 can include a vehicle body 1503, and a window 1502 attached to the vehicle body 1503. This window may be a window for checking the front and back of the automobile, and can also be a transparent display. This transparent display can include the organic light emitting element according to the embodiment. In this case, the constituent materials of the electrodes and the like of the organic light emitting element are formed by transparent members.
The moving body according to this embodiment can be a ship, an airplane, a drone, or the like. The moving body can include a main body and a lighting appliance provided on the main body. The lighting appliance can emit light for making a notification of the position of the main body. The lighting appliance includes the organic light emitting element according to the embodiment.
Each of
Glasses 1600 (smartglasses) according to one application example will be described with reference to
The glasses 1600 further include a control device 1603. The control device 1603 functions as a power supply that supplies power to the image capturing device 1602 and the display device according to each embodiment. In addition, the control device 1603 controls the operations of the image capturing device 1602 and the display device. An optical system configured to condense light to the image capturing device 1602 is formed on the lens 1601.
Glasses 1610 (smartglasses) according to one application example will be described with reference to
The line of sight of the user to the displayed image is detected from the captured image of the eyeball obtained by capturing the infrared rays. An arbitrary known method can be applied to the line-of-sight detection using the captured image of the eyeball. As an example, a line-of-sight detection method based on a Purkinje image obtained by reflection of irradiation light by a cornea can be used.
More specifically, line-of-sight detection processing based on pupil center corneal reflection is performed. Using pupil center corneal reflection, a line-of-sight vector representing the direction (rotation angle) of the eyeball is calculated based on the image of the pupil and the Purkinje image included in the captured image of the eyeball, thereby detecting the line-of-sight of the user.
The display device according to the embodiment of the present invention may include an image capturing device including a light receiving element, and a displayed image on the display device may be controlled based on the line-of-sight information of the user from the image capturing device.
More specifically, the display device decides a first display region at which the user is gazing and a second display region other than the first display region based on the line-of-sight information. The first display region and the second display region may be decided by the control device of the display device, or those decided by an external control device may be received. In the display region of the display device, the display resolution of the first display region may be controlled to be higher than the display resolution of the second display region. That is, the resolution of the second display region may be lower than that of the first display region.
In addition, the display region includes a first display region and a second display region different from the first display region, and a region of higher priority is decided from the first display region and the second display region based on line-of-sight information. The first display region and the second display region may be decided by the control device of the display device, or those decided by an external control device may be received. The resolution of the region of higher priority may be controlled to be higher than the resolution of the region other than the region of higher priority. That is, the resolution of the region of relatively low priority may be low.
Note that AI may be used to decide the first display region or the region of higher priority. The AI may be a model configured to estimate the angle of the line of sight and the distance to a target ahead the line of sight from the image of the eyeball using the image of the eyeball and the direction of actual viewing of the eyeball in the image as supervised data. The AI program may be held by the display device, the image capturing device, or an external device. If the external device holds the AI program, it is transmitted to the display device via communication.
When performing display control based on line-of-sight detection, smartglasses further including an image capturing device configured to capture the outside can preferably be applied. The smartglasses can display captured outside information in real time.
While the present invention has been described with reference to exemplary embodiments, it is to be understood that the invention is not limited to the disclosed exemplary embodiments. The scope of the following claims is to be accorded the broadest interpretation so as to encompass all such modifications and equivalent structures and functions.
This application claims the benefit of Japanese Patent Application No. 2023-022637, filed Feb. 16, 2023 which is hereby incorporated by reference herein in its entirety.
Number | Date | Country | Kind |
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2023-022637 | Feb 2023 | JP | national |