Patent Application
20130328071
The present technology relates to a multilayer film substrate having a function layer such as a semiconductor film and a display layer and to a method of manufacturing the same. The present technology also relates to a method of manufacturing a semiconductor device, a method of manufacturing a display unit, and a method of manufacturing an electronic apparatus that use the method of manufacturing the multilayer film substrate.
In a display unit such as a flexible display, first, a flexible substrate (second substrate) is fixed on a substrate (first substrate) such as glass, and a function layer such as a TFT (Thin Film Transistor) layer and a display layer is formed on the first substrate. After the function layer is formed on the first substrate, the second substrate is peeled off from the first substrate, and accordingly, the flexible display is completed.
However, in the foregoing method, there is a disadvantage that heat is generated at the time of forming the function layer, and the second substrate made of a resin material or the like is melted by the heat. Further, since the heat elongates and contracts the second substrate, precise position adjustment of respective sections of the function layer is difficult. Further, there is a disadvantage that an adhesive for fixing the second substrate on the first substrate is hardened by heat, and the second substrate is peeled off from the first substrate in the middle of manufacture.
To address the foregoing disadvantages, the following method has been proposed (for example, Japanese Unexamined Patent Application Publication No. 2011-142332 (JP2011-142332A)). In such a method, after a function layer is formed on a first substrate, the function layer is peeled off from the first substrate and is moved onto a second layer. In JP2011-142332A, the following method is described. In such a method, a metal layer is provided on the first substrate, an oxidation layer and the function layer are laminated in this order on the metal layer, and subsequently, the metal layer is irradiated with a laser. In this method, a brittle metallic oxide layer is formed by laser irradiation, and therefore, the function layer is allowed to be easily peeled off from the first substrate.
However, in the method of JP2011-142332, since the laser irradiation is performed after the function layer is formed on the first substrate, the function layer may be degraded by heat generated by the laser irradiation.
It is desirable to provide a multilayer film substrate in which degradation of a function layer is suppressed and a method of manufacturing the same. It is also desirable to provide a method of manufacturing a semiconductor device, a method of manufacturing a display unit, and a method of manufacturing an electronic apparatus that use the method of manufacturing the multilayer film substrate.
According to an embodiment of the present technology, there is provided a method of manufacturing a multilayer film substrate, the method including: forming an adhesion control layer on a first substrate, the adhesion control layer including an adhesion section and a separation section; forming a to-be-peeled layer being fixed to the first substrate in the adhesion section and being inhibited from being adhered to the first substrate in the separation section; laminating a function layer on the to-be-peeled layer; peeling the function layer off from the first substrate together with the to-be-peeled layer; and providing the function layer on a second substrate.
According to an embodiment of the present technology, there is provided a method of manufacturing a semiconductor device, the method including: forming an adhesion control layer on a first substrate, the adhesion control layer including an adhesion section and a separation section; forming a to-be-peeled layer being fixed to the first substrate in the adhesion section and being inhibited from being adhered to the first substrate in the separation section; laminating a semiconductor film on the to-be-peeled layer; peeling the semiconductor film off from the first substrate together with the to-be-peeled layer; and providing the semiconductor film on a second substrate.
According to an embodiment of the present technology, there is provided a method of manufacturing a display unit, the method comprising: forming an adhesion control layer on a first substrate, the adhesion control layer including an adhesion section and a separation section; forming a to-be-peeled layer being fixed to the first substrate in the adhesion section and being inhibited from being adhered to the first substrate in the separation section; laminating a display layer on the to-be-peeled layer; peeling the display layer off from the first substrate together with the to-be-peeled layer; and providing the display layer on a second substrate.
According to an embodiment of the present technology, there is provided a method of manufacturing an electronic apparatus, the method including forming a display unit, the forming the display unit including: forming an adhesion control layer on a first substrate, the adhesion control layer including an adhesion section and a separation section; forming an to-be-peeled layer being fixed to the first substrate in the adhesion section and being inhibited from being adhered to the first substrate in the separation section; laminating a display layer on the to-be-peeled layer; peeling the display layer off from the first substrate together with the to-be-peeled layer; and providing the display layer on a second substrate.
In the method of manufacturing the multilayer film substrate, the method of manufacturing the semiconductor device, the method of manufacturing the display unit, and the method of manufacturing the electronic apparatus according to the embodiments of the present technology, the adhesion section and the separation section are provided in the adhesion control layer in advance. Therefore, the function layer provided on the first substrate is moved onto the second substrate without performing a treatment such as laser irradiation.
According to an embodiment of the present technology, there is provided a multilayer film substrate including: on a substrate, a to-be-peeled layer including a concave section on a rear surface thereof; and a function layer laminated on the to-be-peeled layer.
In the multilayer film substrate according to the embodiment of the present technology, due to the concave section of the to-be-peeled layer, adhesiveness in the concave section is allowed to be different from adhesiveness in a section (convex section) other than the concave section. Specifically, even in the case where the to-be-peeled layer and the function layer are formed on another substrate (first substrate), adhesiveness with respect to the first substrate is allowed to be changed by the concave section of the to-be-peeled layer. Therefore, the to-be-peeled layer and the function layer are separated from the first substrate without performing a treatment such as laser irradiation.
According to the method of manufacturing the multilayer film substrate, the method of manufacturing the semiconductor device, the method of manufacturing the display unit, and the method of manufacturing the electronic apparatus of the embodiments of the present technology, the adhesion section and the separation section are provided in the adhesion control layer. According to the multilayer film substrate of the embodiment of the present technology, the concave section is provided on the rear surface of the to-be-peeled layer. Therefore, the function layer is allowed to be moved from the first substrate to the second substrate without degrading the function layer by a treatment such as laser irradiation.
It is to be understood that both the foregoing general description and the following detailed description are exemplary, and are intended to provide further explanation of the technology as claimed.
The accompanying drawings are included to provide a further understanding of the disclosure, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and, together with the specification, serve to explain the principles of the technology.
Preferred embodiments of the present technology will be described below in detail with reference to the drawings. The description will be given in the following order.
1. First Embodiment (a display unit having a concave section on a rear surface of a to-be-peeled layer: an example in which an adhesion section and a separation section are formed by patterning an adhesion control layer)
2. Modification 1 (an example in which an adhesion control layer is directly fixed on a first substrate)
3. Modification 2 (an example in which a plurality of adhesion control layers are included)
4. Second Embodiment (a display unit in which an adhesion control layer is provided in a concave section of a to-be-peeled layer)
5. Third Embodiment (a display unit having a flat to-be-peeled layer: an example in which an adhesion section and a separation section are formed by surface treatment of an adhesion control layer)
In the display region 110, a plurality of pixels 40R, 40G, and 40B that are two-dimensionally arranged in a matrix state and a pixel drive circuit 140 for driving the pixels 40R, 40G, and 40B are formed. In the pixel drive circuit 140, a plurality of signal lines 120A are arranged in a column direction, and a plurality of scanning lines 130A are arranged in a row direction. One of the pixels 40R, 40G, and 40B is provided correspondingly to each intersection of each signal line 120A and each scanning line 130A. The pixels 40R, 40G, and 40B are pixels that emit red light, green light, and blue light, respectively. Each signal line 120A is connected to the signal line drive circuit 120, and each scanning line 130A is connected to the scanning line drive circuit 130.
The signal line drive circuit 120 supplies a signal voltage of an image signal corresponding to luminance information supplied from a signal supply source (not illustrated) to the pixels 40R, 40G, and 40B selected through the signal line 120A. The signal voltage from the signal line drive circuit 120 is applied to the signal line 120A.
The scanning line drive circuit 130 may be configured of, for example, a shift resistor or the like that sequentially shifts (transfers) a start pulse in synchronization with an inputted clock pulse. The scanning line drive circuit 130 scans the pixels 40R, 40G, and 40B in units of row upon writing of an image signal into the pixels 40R, 40G, and 40B, and sequentially supplies a scanning signal to each scanning line 130A. The scanning signal from the scanning line drive circuit 130 is supplied to the scanning line 130A.
The pixel drive circuit 140 is provided in the TFT layer 30 (
Next, a description will be given of detailed configurations of the drive substrate 10 and the display layer 40 referring to
The second substrate 11 may be made of, for example, a flexible material having a thickness (Z direction) from 10 to 1000 μm both inclusive. For the second substrate 11, for example, a film made of, for example, polyethylene terephthalate, polyethylene naphthalate, polyether sulfone, polyether imide, polyetherether ketone, polyphenylene sulfide, polyarylate, polyimide, polyamide, polycarbonate, cellulose triacetate, polyolefin, polystyrene, polyethylene, polypropylene, polymethyl methacrylate, polyvinyl chloride, polyvinylidene chloride, an epoxy resin, a phenol resin, a urea resin, a melamine resin, a silicone resin, or an acryl resin, may be used. Also, for the second substrate 11, for example, a metal foil or the like may be used. For example, a material such as a thin layer glass and a thin layer ceramics may be used by thinning the foregoing material to a degree that the foregoing material exhibits flexibility.
The to-be-peeled layer 20 is fixed on the second substrate 11 by an adhesive layer 21. A rear surface (surface opposed to the second substrate 11) of the to-be-peeled layer 20 is provided with a plurality of concave sections 20A, and has a concave-convex shape. In a step of manufacturing the display unit 1, an adhesion control layer (an adhesion control layer 24 in
As illustrated in
The display layer 40 has a first electrode 41 as an anode electrode, an organic film 43 including a light emitting layer, and a second electrode 44 as a cathode electrode from the second substrate 11 (planarizing film 36) side. In the display layer 40, the second electrode 44 is covered with a second protective film 45, and an opposing substrate 47 is provided on the second protective film 45 with a sealing film 46 in between. The organic film 43 may have, for example, a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer in order from the first electrode 41 side. The light emitting layer may be provided for each of the pixels 40R, 40G, and 40B, or may be provided commonly to the respective pixels 40R, 40G, and 40B. The layers other than the light emitting layer may be provided as necessary. Each of the pixels 40R, 40G, and 40B is separated by a pixel separation film 42. A pixel region P (light emitting region) of the pixels 40R, 40G, and 40B is defined by the pixel separation film 42. In order to prevent the concavity and convexity of the front surface of the to-be-peeled layer 20 from influencing display quality, the pixel region P may be preferably provided in a position opposed to the concave section 20A of the to-be-peeled layer 20. Thereby, the pixels 40R, 40G, and 40B are allowed to be provided in a location other than the portions where the front surface of the to-be-peeled layer 20 is depressed. The opposing substrate 47 may have, for example, color filters corresponding to the pixels 40R, 40G, and 40B and a black matrix between the color filters (not illustrated). In the display unit 1, since an image is displayed on the opposing substrate 47 side, a transparent material is used for the opposing substrate 47. Except for this point, the opposing substrate 47 may be made of a material similar to that of the second substrate 11.
The display unit 1 as described above may be manufactured, for example, as follows.
First, as illustrated in
More specifically, the separation section 24A is configured of a front surface and side surfaces of the patterned adhesion control layer 24, and the adhesion section 24B is configured of the front surface of the first substrate 22. As illustrated in
For the first substrate 22, a substrate thicker than the second substrate 11 may be preferably used. Further, the first substrate 22 may be preferably made of a rigid material such as glass, quartz, and silicon. The close-contact layer 23 is used to fix the adhesion control layer 24 to the first substrate 22, and has adhesiveness with respect to the first substrate 22 and the adhesion control layer 24. The adhesion control layer 24 changes adhesiveness between the first substrate 22 and the to-be-peeled layer 20 by the separation section 24A and the adhesion section 24B. In this case, the adhesion control layer 24 having adhesiveness with respect to the to-be-peeled layer 20 lower than adhesiveness with respect to the first substrate 22 is used, and the adhesion control layer 24 is patterned and thereby, the adhesion section 24B is formed. The adhesion control layer 24 may not be adhered to the to-be-peeled layer 20 at all. Adhesiveness between one of the first substrate 22, the close-contact layer 23, the adhesion control layer 24, and the to-be-peeled layer 20 and another one thereof is related to tensile bond strength (JISK6849 (1994)) between materials configuring the foregoing layers. Tensile adhesion strength between the to-be-peeled layer 20 and the adhesion control layer 24 may be preferably equal to or less than 1 N/mm2. Further, tensile bond strength between the first substrate 22 and the to-be-peeled layer 20, tensile bond strength between the first substrate 22 and the close-contact layer 23, and tensile bond strength between the close-contact layer 23 and the adhesion control layer 24 may each be preferably equal to or larger than 5 N/mm2. For the close-contact layer 23, for example, metal such as chromium (Cr) and titanium (Ti) may be used. For the adhesion control layer 24, for example, metal such as gold (Au), silver (Ag), copper (Cu), and nickel (Ni), a fluorine-based silane coupling agent, an alkyl-based silane coupling agent, or the like may be used. A thickness of the close-contact layer 23 may be, for example, 20 nm. A thickness of the adhesion control layer 24 may be, for example, 50 nm. The close-contact layer 23 and the adhesion control layer 24 may be formed by, for example, a sputtering method or an evaporation method.
After the adhesion control layer 24 and the close-contact layer 23 are patterned, as illustrated in
After the to-be-peeled layer 20 is provided, as illustrated in
Subsequently, the gate insulating film 32 made of, for example, silicon oxide having a thickness of, for example, 100 nm may be formed on the semiconductor film 31 and the to-be-peeled layer 20. Next, aluminum (Al) having a thickness of, for example, 200 nm may be formed on the gate insulating film 32. Thereafter, the resultant is patterned by a photolithography method and an etching method, and the gate electrode 33 and the lower electrode 33C are formed. Subsequently, the whole surface of the first substrate 22 (to-be-peeled layer 20) may be doped with phosphorus at a low concentration by, for example, ion implantation to form the LDD region 31B in the semiconductor film 31. Next, the gate electrode 33 and the LDD region 31B of the semiconductor film 31 are covered with a resist, the whole surface of the first substrate 22 (to-be-peeled layer 20) may be doped with phosphorus at a high concentration by, for example, ion implantation, the resist may be subsequently peeled off, and activation treatment, for example, with the use of flashlamp annealing may be performed. Thereby, the contact region 31A and the channel region 31C are formed in the semiconductor film 31.
Subsequently, the first protective film 34 made of, for example, silicon nitride having a thickness of, for example, 200 nm may be formed on the whole surface of the first substrate 22 by a CVD method. Next, connection holes for connecting the contact region 31A of the semiconductor film 31 with the source-drain electrodes 35A and 35B may be formed in the first protective film 34 by, for example, a photolithography method and a dry etching method. After the connection holes are formed in the first protective film 34, for example, an aluminum film having a thickness of, for example, 200 nm may be formed on the first protective film 34 by a sputtering method. The resultant is patterned to form the source-drain electrodes 35A and 35B and the upper electrode 35C. After the transistor 30T and the retentive capacity 30C are formed in such a manner, the transistor 30T and the retentive capacity 30C may be covered with the planarizing film 36 made of, for example, a photosensitive resin, and thereby, the TFT layer 30 is formed. A connection hole (not illustrated) for connecting the first electrode 41 of the display layer 40 with the transistor 30T may be formed in the planarizing film 36 by, for example, a photolithography method in advance.
After the TFT layer 30 is formed, the display layer 40 may be formed, for example, as below. First, for example, a titanium film and an aluminum alloy film may be formed by, for example, a sputtering method. Thereafter, the resultant may be formed into a prescribed shape by, for example, a photolithography method and dry etching to form the first electrode 41. Next, the planarizing film 36 and the first electrode 41 are coated with a photosensitive insulating material such as polyimide, and the pixel separation film 42 may be formed by, for example, a photolithography method.
After the pixel separation film 42 is formed, the organic film 43 may be formed by, for example, an evaporation method or printing. Next, on the organic film 43, the second electrode 44 may be formed by, for example, an evaporation method, and the second protective film 45 may be formed by, for example, a CVD (Chemical Vapor Deposition) method or a sputtering method in this order. After the second protective film 45 is formed, the opposing substrate 47 on which components such as the color filters and the black matrix are formed is adhered onto the second protective film 45 with the sealing film 46 in between. Thereby, the display layer 40 is formed.
After the TFT layer 30 and the display layer 40 are laminated on the to-be-peeled layer 20 as described above, as illustrated in
In the foregoing method of manufacturing the display unit 1, the separation section 24A and the adhesion section 24B are provided in the adhesion control layer 24. Therefore, after the TFT layer 30 and the display layer 40 are formed on the first substrate 22, the to-be-peeled layer 20 is allowed to be peeled off from the first substrate 22 without performing treatment such as laser irradiation. Therefore, the TFT layer 30 and the display layer 40 are allowed to be prevented from being degraded on the first substrate 22.
In the foregoing method, after the TFT layer 30 is formed on the first substrate 22, the metallic oxide layer 124C is formed by irradiating the laser light L. Therefore, heat generated by laser irradiation may degrade the TFT layer 30. Further, on the first substrate 22, the display layer 40 having low heat resistance is not allowed to be formed. Further, since the laser light L is used, manufacturing cost is increased. In addition thereto, the oxidation layer 124B has a low protective function with respect to moisture and/or the like. Therefore, in the case where the TFT layer 30 is provided on the support substrate, there is a possibility that the oxidation layer 124B does not sufficiently protect the TFT layer 30.
On the other hand, in the display unit 1, the separation section 24A and the adhesion section 24B are provided in the adhesion control layer 24. Thereby, after the to-be-peeled layer 20 is fixed to the first substrate 22 in the adhesion section 24B, and the TFT layer 30 and the display layer 40 are formed on the to-be-peeled layer 20, the to-be-peeled layer 20 is allowed to be easily separated from the first substrate 22 due to the separation section 24A without performing laser irradiation or the like. Therefore, the TFT layer 30 is prevented from being degraded, for example, by laser irradiation and/or the like. Further, the display layer 40 having low heat resistance is allowed to be formed on the first substrate 22. Further, since laser irradiation is not necessary, manufacturing cost is allowed to be decreased. In addition thereto, an oxidation layer is not necessary, and a material having a high protective function with respect to moisture and/or the like such as silicon nitride may be used for the to-be-peeled layer 20.
In the display unit 1, a scanning signal is supplied from the scanning line drive circuit 130 to the pixels 40R, 40G, and 40B through the gate electrode of the writing transistor Tr2. An image signal from the signal line drive circuit 120 is retained in the retentive capacity 30C through the writing transistor Tr2. That is, the drive transistor Tr1 is controlled to be turned on or off according to the signal retained in the retentive capacity 30C. Thereby, a drive current is injected into the pixels 40R, 40G, and 40B, electron-hole recombination occurs, and accordingly, light is emitted. The light passes through the second electrode 44, the second protective film 45, the sealing film 46, and the opposing substrate 47, and is extracted.
In this embodiment, at the time of manufacturing the display unit 1, since the separation section 24A and the adhesion section 24B are provided in the adhesion control layer 24, the first substrate 22 and the to-be-peeled layer 20 may be easily separated from each other without performing a treatment such as laser irradiation.
As described above, in this embodiment, since the separation section 24A and the adhesion section 24B are provided in the adhesion control layer 24, the TFT layer 30 and the display layer 40 are allowed to be moved from the first substrate 22 onto the second substrate 11 without performing a treatment such as laser irradiation. Therefore, degradation of the TFT layer 30 and the display layer 40 is allowed to be suppressed.
A description will be given of modifications of the foregoing embodiment and other embodiments. In the following description, for the same components as the components in the foregoing embodiment, the same referential symbols are affixed thereto, and the description thereof will be omitted as appropriate.
First, as illustrated in
After the to-be-peeled layer 20 is formed, as in the foregoing embodiment, the TFT layer 30 and the display layer 40 are formed on the to-be-peeled layer 20, the to-be-peeled layer 20, the TFT layer 30, and the display layer 40 are moved onto the second substrate 11 with the use of the transfer sheet 50, and thereby, the display unit 1 is completed. The display unit 1 may be manufactured without using a close-contact layer as described above.
First, as illustrated in
After the adhesion control layer 24-1B and the adhesion control layer 24-2 are patterned, as illustrated in
The close-contact layer 25 (second close-contact layer) is provided between the adhesion control layer 24 and the to-be-peeled layer 20. The close-contact layer 25 is patterned together with the adhesion control layer 24, and a plane shape thereof is the same as the plane shape of the adhesion control layer 24. The close-contact layer 25 is used to fix the adhesion control layer 24 to the to-be-peeled layer 20, and has adhesiveness with respect to the to-be-peeled layer 20 and the adhesion control layer 24. The close-contact layer 25 may be made of, for example, chromium, titanium, or the like.
The foregoing display unit 2 having the close-contact layer 25 and the adhesion control layer 24 may be manufactured, for example, as follows.
First, as illustrated in
The display unit 3 may be manufactured, for example, as follows (
First, as illustrated in
The foregoing display unit 1 (and the display units 2 and 3) are applicable to a display unit of an electronic apparatus in any field for displaying an image signal inputted from outside or an image signal generated inside as an image or a video such as a television, a digital camera, a notebook personal computer, a portable terminal device such as a mobile phone, and a video camcorder.
While the present technology has been described with reference to the preferred embodiments and the modifications, the present technology is not limited to the foregoing embodiments and the like, and various modifications may be made. For example, in the foregoing embodiments and the like, the description has been given of the case that the semiconductor film 31 of the transistor 30T is made of polysilicon. Alternatively, the semiconductor film 31 may be made of other material such as oxide semiconductor and organic semiconductor. Further, in the foregoing embodiments and the like, the description has been given of the case that the display units 1, 2, and 3 have the TFT layer 30, that is, active-matrix-type display units. Alternatively, the display units 1, 2, and 3 may be passive-matrix-type display units.
Further, in the foregoing first embodiment and the foregoing second embodiment (display units 1 and 2), the case in which the front surface of the to-be-peeled layer 20 is sunk has been illustrated (
In addition thereto, in the foregoing third embodiment (display unit 3), the description has been given of the case that oxidation treatment by oxygen plasma is performed to form the separation section 24A and the adhesion section 24B in the adhesion control layer 26. Alternatively, the separation section 24A and the adhesion section 24B may be formed, for example, by ozone water treatment, UV ozone treatment, or the like.
Furthermore, the material, the thickness, the film-forming method, the film-forming conditions, and the like of each section are not limited to those described in the foregoing embodiments and the application examples thereof, and other material, other thickness, other film-forming method, and other film-forming conditions may be adopted.
In addition thereto, the display units according to the foregoing embodiments and the like are applicable to a display unit including an organic EL device, and are also applicable to display units including various display devices such as an inorganic EL device, a liquid crystal device, and an electrophoretic display device.
It is possible to achieve at least the following configurations from the above-described exemplary embodiments and the modifications of the disclosure.
(1) A method of manufacturing a multilayer film substrate, the method including:
forming an adhesion control layer on a first substrate, the adhesion control layer including an adhesion section and a separation section;
forming a to-be-peeled layer being fixed to the first substrate in the adhesion section and being inhibited from being adhered to the first substrate in the separation section;
laminating a function layer on the to-be-peeled layer;
peeling the function layer off from the first substrate together with the to-be-peeled layer; and
providing the function layer on a second substrate.
(2) The method of manufacturing the multilayer film substrate according to (1), wherein
the adhesion section and the separation section are formed by patterning the adhesion control layer, and
the to-be-peeled layer is in contact with the first substrate in the adhesion section.
(3) The method of manufacturing the multilayer film substrate according to (2), wherein a first close-contact layer fixing the adhesion control layer to the first substrate is provided between the adhesion control layer and the first substrate.
(4) The method of manufacturing the multilayer film substrate according to (2), wherein
a second close-contact layer fixing the adhesion control layer to the to-be-peeled layer is provided between the adhesion control layer and the to-be-peeled layer, and
the adhesion control layer is peeled off from the first substrate together with the to-be-peeled layer.
(5) The method of manufacturing the multilayer film substrate according to (1), wherein the adhesion control layer is configured of a first adhesion control layer and a second adhesion control layer, the first adhesion control layer including the separation section, and the second adhesion control layer including the adhesion section.
(6) The method of manufacturing the multilayer film substrate according to (5), wherein the second adhesion control layer is provided on part of a surface of the first adhesion control layer.
(7) The method of manufacturing the multilayer film substrate according to (6), wherein
a surface of the second adhesion control layer is covered with a third adhesion control layer including the separation section, and
the adhesion section is configured by exposing a side surface of the second adhesion control layer.
(8) The method of manufacturing the multilayer film substrate according to (1), wherein the adhesion control layer is selectively subjected to surface treatment, and thereby, the adhesion section and the separation section are formed.
(9) The method of manufacturing the multilayer film substrate according to (8), wherein oxidation treatment is performed as the surface treatment.
(10) The method of manufacturing the multilayer film substrate according to any one of (1) to (9), wherein the function layer and the to-be-peeled layer are physically peeled off from the first substrate.
(11) The method of manufacturing the multilayer film substrate according to any one of (1) to (10), wherein the first substrate having thickness that is larger than thickness of the second substrate is used.
(12) The method of manufacturing the multilayer film substrate according to any one of (1) to (11), wherein the second substrate is made of a flexible material.
(13) A method of manufacturing a semiconductor device, the method including:
forming an adhesion control layer on a first substrate, the adhesion control layer including an adhesion section and a separation section;
forming a to-be-peeled layer being fixed to the first substrate in the adhesion section and being inhibited from being adhered to the first substrate in the separation section;
laminating a semiconductor film on the to-be-peeled layer;
peeling the semiconductor film off from the first substrate together with the to-be-peeled layer; and
providing the semiconductor film on a second substrate.
(14) A method of manufacturing a display unit, the method including:
forming an adhesion control layer on a first substrate, the adhesion control layer including an adhesion section and a separation section;
forming a to-be-peeled layer being fixed to the first substrate in the adhesion section and being inhibited from being adhered to the first substrate in the separation section;
laminating a display layer on the to-be-peeled layer;
peeling the display layer off from the first substrate together with the to-be-peeled layer; and
providing the display layer on a second substrate.
(15) A method of manufacturing an electronic apparatus, the method including
forming a display unit, the forming the display unit including forming an adhesion control layer on a first substrate, the adhesion control layer including an adhesion section and a separation section,
forming an to-be-peeled layer being fixed to the first substrate in the adhesion section and being inhibited from being adhered to the first substrate in the separation section,
laminating a display layer on the to-be-peeled layer,
peeling the display layer off from the first substrate together with the to-be-peeled layer, and
providing the display layer on a second substrate.
(16) A multilayer film substrate including:
on a substrate,
a to-be-peeled layer including a concave section on a rear surface thereof; and
a function layer laminated on the to-be-peeled layer.
(17) The multilayer film substrate according to (16), wherein
the to-be-peeled layer includes a plurality of the concave sections, and
a front surface of the to-be-peeled layer is depressed between any two of the plurality of the concave sections adjacent to each other.
(18) The multilayer film substrate according to (16) or (17), wherein an adhesion control layer is included in the concave section, the adhesion control layer being fixed to the to-be-peeled layer.
(19) The multilayer film substrate according to any one of (16) to (18), wherein
the function layer is a display layer including a plurality of pixel regions, and
the pixel regions are each provided in a location that is opposed to the concave section of the to-be-peeled layer.
The present disclosure contains subject matter related to that disclosed in Japanese Priority Patent Application JP 2012-132947 filed in the Japan Patent Office on Jun. 12, 2012, the entire contents of which is hereby incorporated by reference.
It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and alternations may occur depending on design requirements and other factors insofar as they are within the scope of the appended claims or the equivalents thereof.
| Number | Date | Country | Kind |
|---|---|---|---|
| 2012-132947 | Jun 2012 | JP | national |
