Claims
- 1. The method of preparing a porous, crystalline material comprised of silicon oxide and titanium oxide wherein the ratio of said oxides is represented by the formula
- xTiO.sub.2.(1-x)SiO.sub.2
- in which x is a number between 0.0005 and 0.04, which comprises the steps of:
- (1) preparing an aqueous mixture of starting reagents free from alkali- and alkaline-earth metals including a source of silicon oxide selected from the group consisting of silica gel and tetraalkylorthosilicates, a source of titanium oxide consisting of a hydrolysable titanium compound, and a nitrogenated organic base, and wherein the starting reagents have the following molar ratios:
- SiO.sub.2 /TiO.sub.2 from 5 to 200,
- OH.sup.- /SiO.sub.2 from 0.1 to 1.0,
- H.sub.2 O/SiO.sub.2 from 20 to 200,
- RN.sup.+ /SiO.sub.2 from 0.1 to 2.0
- wherein RN.sup.+ is the cation of the nitrogenated organic base,
- (2) subjecting said mixture to hydrothermal treatment in an autoclave at a temperature in the range of 130.degree. to 200.degree. centrigrade under its own pressure for a period of 6 to 30 days to obtain crystals and a mother liquor,
- (3) separating said crystals from the mother liquor,
- (4) washing the separated crystals with water and then drying the same, and
- (5) heating the dried crystals in air so as to calcine the same and eliminate said nitrogenated base therefrom.
- 2. A method as claimed in claim 1, wherein the hydrolysable titanium compound is a member of the group consisting of TiCl.sub.4, TiOCl.sub.2 and Ti(alkoxy).sub.4.
- 3. A method as claimed in claim 2, wherein Ti(alkoxy).sub.4 is Ti(OC.sub.2 H.sub.5).sub.4.
- 4. A method as claimed in claim 1, wherein the nitrogenated organic base is tetraalkylammonium hydroxide.
- 5. A method as claimed in claim 1, wherein x is a number between 0.01 and 0.025.
- 6. A method as claimed in claim 4, wherein the nitrogenated organic base is tetrapropylammonium hydroxide.
- 7. A method as claimed in claim 1, wherein the molar ratios of the starting reagents are:
- SiO.sub.2 /TiO.sub.2 from 35 to 65,
- OH.sup.- /SiO.sub.2 from 0.03 to 0.6,
- H.sub.2 O/SiO.sub.2 from 60 to 100,
- RN.sup.+ /SiO.sub.2 from 0.4 to 1.0.
Priority Claims (1)
Number |
Date |
Country |
Kind |
28323 A/79 |
Dec 1979 |
ITX |
|
Parent Case Info
This is a continuation of application Ser. No. 208,420, filed Nov. 19, 1980, now abandoned.
US Referenced Citations (7)
Continuations (1)
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Number |
Date |
Country |
Parent |
208420 |
Nov 1980 |
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