Claims
- 1. Apparataus for controlling gas flow in a multi-batch semiconductor vapor phase growing system to control batch-to-batch variations in semiconductor thickness and resistivity, comprising:
- gas flow control means for controlling a quantity of gas provided to said device;
- first memory means storing a process program including gas flow amounts and sequence step timing for a batch process;
- second memory means storing gas flow correction values which vary according to batch number;
- third memory means storing sequence step timing correction values which vary according to batch number;
- processing means for (a) controlling sequence step timing, (b) determining a number of a given batch, (c) determining gas flow and timing correction values for said given batch number, (d) correcting said gas flow amount and said sequence step timing in accordance with the determined correction values, and (e) controlling said gas flow control means and said sequence step timing in accordance with the corrected gas flow amount and corrected sequence step timing.
- 2. Apparatus according to claim 1 wherein said gas flow control means includes a plurality of main flow valves and a corresponding plurality of auxilliary flow valves, each auxilliary flow valve being connected in parallel with a corresponding main flow valve, said apparatus further including:
- main flow valve monitoring means for monitoring a quantity of gas flowing through each said main flow valve; and
- transfer means for activating an auxilliary flow valve and deactivating a main corresponding flow valve when said monitoring means detects the corresponding main flow valve is faulty.
- 3. A method for controlling gas flow in a multi-batch semiconductor vapor phase growing system to control batch-to-batch variations in semiconductor thickness and resistivity, comprising the steps of:
- controlling a quantity of gas supplied to said device;
- storing a process program including gas flow amounts and sequence step timing for a batch process;
- storing gas flow correction values which vary according to batch number;
- storing sequence step timing correction values which vary according to batch number;
- controlling said sequence step timing;
- determining a number of a given batch;
- determining gas flow and timing correction values for said given batch number;
- correcting said gas flow amount and said sequence step timing in accordance with the determined correction values; and
- controlling said gas flow and said sequence step timing in accordance with the corrected gas flow amount and corrected sequence step timing.
Priority Claims (3)
Number |
Date |
Country |
Kind |
58-184953 |
Oct 1983 |
JPX |
|
58-184954 |
Oct 1983 |
JPX |
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58-184955 |
Oct 1983 |
JPX |
|
Parent Case Info
This is a continuation of application Ser. No. 657,146, filed Oct. 3, 1984, which was abandoned upon the filing hereof.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
4331702 |
Hieber et al. |
May 1982 |
|
4430959 |
Ebata et al. |
Feb 1984 |
|
Continuations (1)
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Number |
Date |
Country |
Parent |
657146 |
Oct 1984 |
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