This invention relates to a process for producing a single-walled carbon nanotube, a single-walled carbon nanotube obtained therefrom, and a composition containing single-walled carbon nanotube, and to be more concrete, the invention relates to a process for producing a high quality single-walled carbon nanotube with few defects, a single-walled carbon nanotube obtained therefrom, and a composition containing single-walled carbon nanotube.
Recently, research and development of carbon nanotubes (hereafter, simply abbreviated to “CNTs”) have extensively been carried out. Among these CNTs, especially, the research and development on single-walled CNTs are strongly desired for the reason that the characteristics, for example, its shape, electronic property, adsorption characteristic, mechanical characteristic, or the like are applicable to wide ranges of use.
Conventionally, an arc discharge method, a laser ablation method, and a CVD method are known as typical processes for producing CNT.
Among these, the arc discharge method is a technique for yielding multi-walled CNT in sediment on a cathode by carrying out arc discharge across carbon bars in an atmosphere of argon or hydrogen at pressure lower than the air atmosphere. In this case, if the arc discharge is carried out with a catalyst such as Ni/Y mixed in the carbon bars, single-walled CNTs can be yielded in a vessel. This arc discharge method has the advantage of being able to yield relatively good quality CNTs with few defects, but on the other hand, the method has such disadvantages as i) yielding amorphous carbon at the same time, ii) cost is high, and iii) being unsuitable for mass-production, etc.
The laser ablation method is used for producing CNTs by irradiating carbon mixed with catalysts such as Ni/Co with strong pulsed light pulses, such as YAG laser light, in a high-temperature atmosphere of 900 to 1300° C. This technique has the advantage of being able to obtain relatively high purity CNTs and also to control the tube diameter by means of altering the conditions thereof, but yields insufficiently quantities, and is therefore considered as inappropriate for producing CNT in an industrial scale.
The CVD method (Chemical Vapor Deposition method) is used for yielding CNTs by bringing a carbonic compound as a carbon source into contact with catalytic metal particle at 500 to 1200° C. The method permits variations in the kinds of metal catalysts and arrangements thereof, and kinds of the carbon compounds, and permits the synthesis of single-walled or multi-walled CNTs by changing the conditions. Moreover, this method permits to obtain multi-walled CNTs aligned perpendicular to the substrate surface to be obtained by arranging the catalyst on the substrate.
As an application of this CVD method, Dai et al. have disclosed a method for obtaining single-walled CNTs by using carbon monoxide as a raw material and iron-carbonyl as a catalyst (Chemical Physics Letters, 260, 471-475, (1996)). Since this technique enables the raw material to be supplied as a gas, this technique is most suitable for mass synthesis, and has been shown to yield a relatively high percentage of single-walled CNTs, while the synthesized single-walled CNTs have the disadvantage of generally having many defects. Moreover, a high temperature at 900° C. or higher is necessary to yield the single-walled CNTs. There is also a safety issue because highly toxic carbon monoxide and iron carbonyl are used. Concerning a technique for producing single-walled CNTs by the CVD method, many other techniques are disclosed, but actual trial processes have proved that any of them has a problem of a low percentage of single-walled CNTs in CNTs, not exceeding 20%.
The purpose of the present invention is to provide a process for producing single-walled carbon nanotubes which contain little or almost no foreign substances such as multi-walled carbon nanotubes, amorphous carbon, and carbon nano-particles and having satisfactory quality with few defects.
Another object of the present invention is to provide a process for safe mass yield of high quality single-walled carbon nanotubes with few defects.
Further, another object of the present invention is to provide high quality single-walled carbon naotubes with few defects and a composition containing single-walled carbon nanotubes.
The process for producing the single-walled carbon nanotubes of the present invention for achieving the above purposes is characterized in that atmosphere of a carbon source comprising an oxygenic compound or a mixture of an oxygenic compound and a carbonic compound is brought into contact with a catalyst with heating to yield the single-walled carbon nanotubes.
Moreover, another process for producing the single-walled carbon nanotubes according to the present invention is characterized in that the carbon source comprising an oxygenic compound or the mixture of the oxygenic compound and the carbonic compound is brought into contact with the catalyst with heating to yield the carbon nanotubes so as to adhere to one end of the catalyst, and the carbon nanotubes of 95% or more are single-walled carbon nanotubes.
A further process for producing the single-walled carbon nanotubes according to the present invention is characterized in that the carbon source comprising the oxygenic compound or the mixture of the oxygenic compound and the carbonic compound is brought into contact with the catalyst with heating to yield carbon nanotubes so as to adhere to one end of the catalyst; and when the composition containing carbon nanotubes are observed by a transmission electron microscope of 106-magnification or more, at least 30% of a 100 nm square viewing area is occupied by carbon nanotubes, and the carbon nanotubes of 95% or more are the yielded single-walled carbon nanotubes.
By such a process of the present invention, it is possible to produce single-walled carbon nanotubes which contain few foreign substances such as multi-walled carbon nanotubes, amorphous carbon, and carbon nano-particles other than the single-walled carbon nanotubes and have high quality with few defects. In order to enhance such effect, an oxygenic organic compound is preferably used as a carbon source comprising an oxygenic compound used as a raw material, and to be more preferable, alcohol and/or ether is used. Moreover, a metal which will be mentioned later is preferably used as a catalyst. The catalyst supported with a supporting material is more preferably used. The heating temperature is preferably 500° C. or higher.
Moreover, in the present invention, a plurality of production processes can be exemplified as the following, as more detailed processes for producing the single-walled carbon nanotubes.
The first exemplified process for producing the single-walled carbon nanotubes comprises;
The second exemplified process for producing the single-walled carbon nanotubes comprises;
The third exemplified process for producing the single-walled carbon nanotubes is characterized by comprising;
Further, the fourth exemplified process for producing the single-walled carbon nanotubes comprises;
By these production processes of the present invention, it is possible to obtain the composition containing single-walled carbon nanotubes satisfying the conditions mentioned below.
Moreover, a composition containing single-walled carbon nanotubes satisfying the following conditions can be obtained.
a) When the composition containing single-walled carbon nanotubes is thermally analyzed in the air at temperature rising of 5° C./min, a peak position of a linear differential curve of weight decrease by burning is required to be at 570° C. or higher, and a half value width of the peak is smaller than 80° C.
b) When observed by a transmission electron microscope of 106-magnification or more, at least 10% of a 100 square nm viewing area is occupied by the carbon nanotubes, and 70% or over of the carbon nanotubes are required to be the single-walled carbon nanotubes.
The basic constitution of the process for producing single-walled nanotubes according to the present invention is a carbon source comprising an oxygenic compound or an atmosphere of a mixture of an oxygenic compound and a carbonic compound is brought into contact with a catalyst with heating to yield single-walled carbon nanotubes. Through such a process as the above, the single-walled carbon nanotubes can be obtained in good quality and with few defects.
In the present invention, the carbon source comprising the oxygenic compound or the mixture of the oxygenic compound and the carbonic compound is used as a raw material. The former raw material is a mono-molecular compound having both of oxygen and carbon, while the latter raw material is a mixture of two or more molecules comprising oxygenic compounds and carbonic compounds. However, the former mono-molecular compound having oxygen and carbon is preferably used, more preferably, an oxygenic organic material is used.
Although carbon monoxide is a compound containing oxygen and carbon in the molecule, it is not an organic material, therefore, it doesn't include in the organic materials having oxygen in one molecule. Moreover, since carbon monoxide has a safety problem, it is not suitable for the raw material to be used for the present invention. However, it does not matter that carbon monoxide (CO) is produced as an intermediate product.
The kinds of the organic materials containing oxygen in the molecules are not specially limited, but alcohol and/or ether is preferably used. Although the kinds of alcohols are not specially limited, alcohol having 1 to 10 atoms of carbon is preferably used because it is easy to gasify. Moreover, the alcohols are not limited to those having only one piece of OH group, but they may have two pieces or more. Although the ethers are not limited to special kinds, ether having 1 to 10 atoms of carbon is preferably used because it is easy to gasify. Moreover, the ethers are not limited to those having only one piece of —O-group, but they may have two pieces or more.
As usable alcohols, for example, methanol, ethanol, n-propanol, iso-propanol, n-butanol, iso-butanol, sec-butanol, tert-butanol, n-pentanol, iso-pentanol, n-amylalcohol, iso-amylalcohol, n-hexanol, n-butanol, n-octanol, n-nonanol, n-decanol, and the like can be mentioned, but the alcohols are not limited to these.
Moreover, as ethers, for example, dimethyl ether, diethyl ether, methyl ether, and the like can be mentioned, but the ethers are not limited to these.
Alcohols and ethers also depend on the catalyst to be used in the production process of the present invention, but at least one kind among methanol, ethanol, n-propanol, and iso-propanol is preferably used.
The oxygenic compound of “a mixture of an oxygenic compound and a carbonic compound” in the present invention is as above mentioned, and the carbonic compound is exemplified as hydrocarbons such as methane, ethane, ethylene, acetylene, hexane, benzene, xylene, and toluene. It may contain other atoms in addition to carbon as pyridine and amine. As examples of the mixtures, mixtures of hydrocarbons such as acetylene and water, or NOX, SOX, and hydrocarbons such as acetylene can be mentioned.
The carbon source comprising the oxygenic compound, and the mixture of the oxygenic compound and the carbonic compound as mentioned above are supplied as gaseous atmospheres when they are supplied to a reaction area as raw materials. In the case of liquid compounds, such an atmosphere like this can be produced by using their vapors, and the flows can be exhausted by a vacuum pump or the like, and also the atmosphere can be produced by using a supporting material gas.
In the present invention, the catalyst is arranged so as to come into contact with the atmosphere of the above-mentioned raw materials in the reaction area with heating. The catalyst may be laid at rest in the reaction area, or it may be made to flow so as to be brought into contact with the atmospheric gases of the raw materials. The catalyst is laid at rest when producing single-walled carbon nanotubes in batch. Moreover, when producing the single-walled carbon nanotubes continuously, the catalyst is preferably made to flow. Here, the “flowing” means to supply the catalyst to the reaction area in order to let the catalyst yield the single-walled carbon nanotubes, and thereafter, remove the catalyst having yielded the single-walled carbon nanotubes from the reaction area, namely, the “flowing” means to let the catalyst be present so that it is moved in the reaction area.
The atmosphere of the source is brought into contact with the catalyst with heating to yield the single-walled carbon nanotubes, and a lower limit of the heating temperature depends on the above-mentioned atmosphere and the catalyst, but is 500° C., preferably 550° C., more preferably 650° C. Namely, the heating temperature is controlled to be 500° C. or higher, preferably 550° C. or higher, more preferably 650° C. or higher. According to the production process of this invention, the single-walled carbon nanotubes can be synthesized at such a relatively low heating temperature. Therefore, even a relatively low heat-resisting material, for example, even a wired silicon substrate can be synthesized the single-walled carbon nanotubes and wiring via the single-walled carbon nanotubes on the substrate.
An upper limit of the heating temperatures depends on the above-mentioned atmosphere of the source gas and the catalyst, but is 1500° C., preferably 1000° C., more preferably 900° C. Namely, the heating temperature is controlled to be 1500° C. or lower, preferably 1000° C. or lower, more preferably 900° or lower.
Moreover, the diameter of the yielded single-walled carbon nanotubes can be controlled by controlling the heating temperature. Although the diameter depends also on the catalyst or the like to be used, the obtained single-walled carbon nanotubes can generally be reduced in diameter if the heating temperature is lowered. On the contrary, the diameter can be increased if the heating temperature is raised. The smaller the diameter is, the more excellent the single-walled carbon nanotubes are in an electron discharge characteristic and the easier to obtain an additional effect in the case of using them as a composite material. Since the conventionally known process could yield the single-walled carbon nanotubes only at high temperatures, catalyst particles agglomerate and become large. As a result, it has been impossible to obtain single-walled carbon nanotubes with small diameter.
By the production process of the present invention, it is possible to synthesize the single-walled carbon nanotubes at a relatively low temperature by using the carbon source comprising the oxygenic compound, preferably oxygenic organic material such as alcohol and/or ether as the raw material. Especially, it is possible to synthesize single-walled carbon nanotubes having a small diameter. Moreover, the production process of the present invention has the advantage of being able to inhibit yielding carbon nanotubes with large diameter.
As the catalysts to be used for the present invention, any of the known catalysts which have been conventionally used for synthesizing carbon nanotubes can be used. For example, the catalysts which have been conventionally used for typical production processes of carbon nanotubes, namely, (1) an arc discharge method, (2) a laser ablation method, and (3) a CVD method, can be used. More concretely, the one which a metal catalyst is supported on a supporting material can be used.
These metal catalysts can be exemplified as Fe, Co, Ni, Mo, Pt, Pd, Rh, Ir, Y, La, Ce, Pr, Nd, Gd, Th, Dy, Ho, Er, Lu, and the like. Preferably, Fe, Co, Ni, Mo, Pt, Pd, Rh, Ir, Y, as well as Ce, Pr, Nd, Gd, Th, Dy, Ho, Er, Lu and the like. Moreover, combinations of these, for example, Fe/Co, Ni/Co, Fe/Mo, Co/Mo, and the like; combinations of oxides of the above metals and the above metals; and combinations of oxides of the above metals can be used.
As supporting materials of the metal catalysts, silica, alumina, zeolite, MgO, zirconia, titania can be used. Of course, in addition to above materials, other materials can be used as supporting materials. For example, a wired silicon substrate is used as a supporting material and a suitable metal catalyst is made to be supported on the desired part of the silicon substrate, and thereby, synthesis of single-walled carbon nanotubes and wiring by the synthesized single-walled carbon nanotubes on the substrate can be realized.
As a process for supporting a metal on a supporting material, there is a process as follows while it does not mean to be limited to the process. A metal salt is dissolved in a solvent such as water or alcohol and the supporting material is impregnated therein, with mixing operation such as stirring according to the necessity, and the solvent is then dried to obtain the metal-supported material. The supported salt in the dried body is decomposed by heating and the dried body becomes the catalyst to be used for the present invention. The heating conditions are not specially limited, but the temperature should not be lower than the decomposition temperature of the metallic salt. The atmosphere of heating is also not specially limited, but is preferably carried out in an active gas, a reducing gas, an inert gas containing reducing gas, or in a vacuum. More preferably, the heating is carried out in an inert gas or in an inert gas containing a reducing gas.
The supporting material is not specially limited as far as it is resistant to a reaction temperature, but MgO and zeolite are preferably used. MgO is preferred because it is easily decomposed later and the catalyst supporting material is easily removable by acid. Moreover, although the reason is not clear, zeolite is preferable because it gives a high yield of single-walled carbon nanotubes. Especially, zeolite can increase yield of carbon nanotubes compared with other supporting materials.
Zeolite in the present invention consists of the crystalline inorganic oxide having molecular-sized minute hole diameters. Here, the molecular size is within the range of molecules existing in the world, and generally means a range of 0.2 nm to 2 nm. More specifically, the crystalline inorganic oxide means a crystalline micro porous material consisted of crystalline silicate, crystalline aluminosilicate, crystalline metallosilicate, crystalline metallo aluminisilicate, crystalline alumino-phosphate, crystalline metallo-alumino-phosphate or the like.
As crystalline silicate, crystalline aluminosilicate, crystalline metallosilicate, crystalline metallo aluminisilicate, crystalline alumino-phosphate, and crystalline metallo-alumino-phosphate, their kinds are not particularly limited, but for example, crystalline inorganic porous substances having the structures reported on (Atlas of Zeolite Structure types (W. M. Meier, D. H. Olson, Ch. Baerlocher, Zeolites, 17(½), 1996) can be mentioned.
The zeolites used in the present invention are not limited to those reported on the literature, but include zeolites having new structures synthesized one after another recently. Preferable structures are those of FAU-type, MFI-type, MOR-type, BEA type, LTL-type, LTA-type, and FER-type which are easily available, but the structures are not limited to these. Because they are easily available, as crystalline aluminosilicate, FAU-type, MFI-type, MOR-type, BEA-type, LTL-type, LTA-type and FER-type are preferably used.
It is known that multi-walled carbon nanotubes are produced by making a metal support on a zeolite as a catalyst supporting material, and bringing it into contact with a hydrocarbon at high temperature (Chemical Physics Letters 303, 117-124(1999)). Also, it has been known that although only partially, single-walled carbon nanotubes can be obtained by bringing a zeolite supporting a metal thereon into contact with acetylene at a temperature higher than 800° C., but single-walled carbon nanotubes cannot be obtained at a temperature lower than 800° C. (Abstracts of the 21st Fullerene General Symposium, July, 2001).
By the present invention, it has been found out that single-walled carbon nanotubes can be obtained with high-purity, high-selectivity, and high-yield by bringing an oxygenic organic material such as ethanol or the like into contact with a zeolite supporting a metal catalyst thereon. The differences between the single-walled carbon nanotubes according to the present invention and the single-walled carbon nanotubes using a conventional zeolite are (1) the source gas is an oxygenic organic material, (2) the single-walled carbon nanotubes can be yielded at a reaction temperature of 800° C. or lower, (3) the yielded carbon nanotubes mainly consist of single-walled carbon nanotubes, and its quality and purity are extremely high.
The production process itself is a combination of conventional known techniques, but it is noteworthy that the effects have high unexpectedness. According to the present invention, the single-walled carbon nanotubes can be produced at a low temperature 800° C. or lower, therefore, it is not necessary to use a heat-resisting zeolite. For example, crystalline aluminosilicates in any range can be used.
For example, there are low heat-resisting ones among crystalline aluminosilicates zeolite, but they can be used without problem according to the present invention. The reason why it becomes the highest yield in the case of using a catalyst supporting a metal on a zeolite is not clear at present, but it is considered that the metal is dispersed well by using the uniform pores of zeolite. Therefore, if considering the yield important, the more pores on the outer surface are, the more preferable. Namely, zeolites having two-dimensional or three-dimensional pore structure are preferable. A crystal size is also preferred to be smaller, but if it is too small, handling is assumed to be difficult, therefore, those zeolites generally appeared on the market or used and synthesized for research can be used without limiting largely.
A silica-alumina ratio of a crystalline aluminosilicate zeolite is not particularly limited, but zeolites having the ratio within the range of 2 to 500 are preferably used. Since a reaction temperature is not limited, high thermal resistance that has conventionally been required for producing single-walled carbon nanotubes is not necessary. Therefore, (1) crystalline alumino-phosphate, (2) crystalline aluminosilicate zeolite, (3) dealuminized zeolite where aluminum is removed from crystalline aluminosilicate (dealuminized high-silica type crystalline aluminosilicate) which are generally regarded as low heat-resisting, can be utilized. These zeolites are presumed to be unsuitable for producing carbon nanotubes at a high temperature due to low heat resistance and many structural defects, however, since the production process according to the present invention allows synthesizing single-walled carbon nanotubes at a low temperature, the zeolites can be used sufficiently. In these zeolites, a polarity part of alumino-phosphate, that of aluminosilicate, and a defective site after high silica type crystalline aluminosilicate has been dealuminized have high affinity with a metallic salt, and the zeolites can preferably be used.
Moreover, only a metal catalyst may be used without using a supporting material. For example, the catalyst can be introduced in a reaction area by dissolving a metallic salt and/or an organic metal compound in alcohol or the like, letting it be sprayed from the upper part of a reaction tube, and letting it pass through the reaction area. To be specific, the organic metal compound is ferrocene, cobaltcene or the like.
However, it is preferable to make a catalyst support on a supporting material in order to avoid the agglomeration of catalyst particles.
According to the present invention, a carbon source (a source gas) comprising an oxygenic compound is brought into contact with a catalyst, and as for the atmosphere of the gas, the pressure or partial pressure is 0.1-200 Torr (0.01-27 kPa), preferably 0.2-50 Torr (0.02-6.7 kPa), and more preferably 1-20 Torr (0.13-2.7 kPa). More preferably, the pressure or partial pressure is not higher than 1-10 Torr (0.13-1.3 kpa). Here, if the partial pressure is too high, problems such as adhesion of amorphous carbon to the single-walled carbon nanotubes are increased. Also, if the partial pressure is too low, yield of the single-walled carbon nanotubes is decreased. The whole pressure may be on any of reduced, normal, and pressurized conditions. Moreover, an inert gas or the like other than the raw material gas may coexist. The pressure is not particularly limited, but normal or reduced pressure is preferable to proceed the reaction considering easiness of the operation and little adhesion of amorphous carbon to the single-walled carbon nanotubes.
It is preferable to make a flow of the raw material gas. To be specific, a carbon source (a source gas) comprising an oxygenic compound is made to flow by using a vacuum pump, or a supporting material gas is recommended for the use.
The supporting material gas is a gas for making a gas flow. The gas is not particularly limited, an inorganic gas is mainly recommended for the use. The supporting material gas is not particularly limited as long as it is an inorganic gas, but especially an inert gas is preferable because it does not affect on the reaction. For example, nitrogen, helium, argon, or the like can preferably be used. To make a gas flow of the source gas after the gas is brought to a reduced partial pressure, it is preferable to use especially a vacuum pump therefor and make a gas flow of the source gas under a reduced pressure. It is preferable to trap these raw material gases by cooling just in front of the pump, to recover and reuse the liquid for the source of the trapped raw material gases, and to use it as an energy source by burning. The raw material vapor can be transferred with a supporting material gas in a similar way.
According to the present invention, it is possible to provide below described method as a specific producing process of the single-walled carbon nanotubes.
The first producing process comprises:
The second producing process comprises:
The third producing process comprises:
The fourth producing process comprises:
A mechanism of the producing process of the present invention is not completely clear. However, it is conceivable to be following ones. Namely, it is conceivable that under heated temperature and in the vicinity of the catalyst, the carbon source comprising the oxygenic compound, preferably oxygenic organic material, or particularly preferably alcohols or ethanol; and wherein ether creates OH radicals or oxygen radicals, and the OH radical or the oxygen radicals react carbon atoms with dangling bond.
Namely, while carbon atoms which become a part of stable single-walled carbon nanotubes are maintained, amorphous carbon which cannot become the part of single-walled carbon nanotubes is removed by attack of the OH radical or the oxygen radical. Thus, since yielding and purification of the single-walled carbon nanotubes are performed simultaneously, the single-walled carbon nanotubes can be yielded in a very selective manner. Namely, in the present invention, the existence of the carbon source comprising the oxygenic compound enables to realize the mechanism. Alcohols and/or ethers are preferably used as raw materials, which satisfy these conditions simultaneously.
It should be noted that there is a technique using high temperature and high pressure CO gas as a process with a few amorphous carbon. In this case, annealing of the nanotubes is performed on the condition that extremely high temperature is secured. However, according to producing process of the present invention, it is not necessary to perform annealing and it is possible to synthesize single-walled carbon nanotubes at relatively low temperature.
The reason thereof is not clear, however, it is conceivable that the carbon source comprising the oxygenic compound containing hydrogen is important. It can be supposed that the catalyst and the carbon source comprising oxygenic compound come into contact with each other, and hydrogen gas generated by the decomposition activates the catalyst to remove additional oxygen, effecting to reduce the reaction temperature. Namely, the raw materials containing oxygen, carbon and hydrogen are preferable, and, as a preferable raw material, an oxygenic organic material can be mentioned. As a superordinate concept of this matter, separately supplying a carbon source, an oxygen source, and a hydrogen source also falls within the range of the present invention.
The catalyst adheres to the one end of the carbon nanotubes obtained by using the producing process according to the present invention. When the composition containing carbon nanotubes is observed by a transmission electron microscope (TEM) of 106-magnification or higher (more), a photograph that the 100 nm square viewing area of at least 10% is occupied by the carbon nanotubes and the carbon nanotubes of 70% or more are single-walled carbon nanotubes is obtained. That is to say a high-purity and a high-yield.
If another condition in the present invention is selected, the single-walled carbon nanotubes with higher purity are obtained. When the composition containing carbon nanotubes yielded is observed by the transmission electron microscope of 106-magnification or higher (more), a photograph that the 100 nm square viewing area of at least 30% is occupied by the carbon nanotubes and the carbon nanotubes of 95% or more are single-walled carbon nanotubes is obtained (see
The single-walled carbon nanotubes yielded in the conventional producing process are mixture of amorphous carbon or a great deal of multi-walled carbon nanotubes; and metal catalysts are found not only one end of the single-walled carbon nanotubes but also all places of it. Consequently, it could not be obtained above-described transmission electron microscope photograph. To observe with the transmission microscope of 106-magnification also means to observe that the photograph measured by two hundreds thousand-magnification blows up to five times. The transmission microscope is preferable to observe with high-resolution transmission electron microscope.
Further, the single-walled carbon nanotubes obtained in the producing process of the present invention have few defects or no defect in the single walls, thus they are very high quality. Defects of the single-walled carbon nanotubes can be observed by the transmission electron microscope. The defect means a part where the walls of the single-walled carbon nanotubes are seen discontinued.
Few defects can be also defined as follows. Namely, when performing thermal analysis of the composition containing the single-walled carbon nanotubes obtained by the producing process of the present invention at temperature rising rate of 5° C./minute in the air, peak position of linear differential curve of weight decrease by burning is 500° C. or higher. Preferably, the peak position is 540° C. or higher. Namely, heat resistance or oxidation resistance is high. It should be noted that the thermal analysis is described later.
The single-walled carbon nanotubes obtained by the conventional producing process are adhered by a lot of catalysts to be oxidation catalysts, or even if the metal catalysts are removed, there are so many defects, so that when performing thermal analysis in the air, only resulting in oxidation burning at low temperature. The single-walled carbon nanotubes obtained by the present invention, even though performing thermal analysis in the condition that catalyst or catalyst support adheres thereon, namely the condition just after the yielding, can obtain result of high oxidation resistance as described above. Of course, when reducing density of the catalyst in the composition containing single-walled carbon nanotubes, heat resistance of the carbon nanotubes becomes high. The carbon nanotube whose peak position is 550° C. or higher, 560° C. or higer, 570° C. or higher or 580° C. or higer each can be obtained.
Thus, the single-walled carbon nanotubes with high heat resistance and high oxidation resistance have not been obtained until now. It can be obtained initially in the present invention. Further, half value width is 170° C. or lower. Similar to the peak position, when reducing density of the catalyst in the composition containing single-walled carbon nanotubes, namely when increasing amount of carbon nanotubes, it is possible to minimize the half value width. According to the producing process of the present invention, it is possible to obtain the carbon nanotube whose half value width is 120° C. or less, 100° C. or less, 90° C. or less, 80° C. or less, 70° C. or less, or 60° C. or less as the most sharpest one. Small half value width means high purity and small defect site, and indicates that diameter distribution of the single-walled carbon nanotubes is uniform.
Further, as for single-walled carbon nanotubes obtained in the present invention, their major component is the single-walled carbon nanotubes; and it is possible to estimate its diameter by the resonance Raman scattering measurement. Diameter is obtained by the following equation.
(diameter(nm) of the single-walled carbon nanotube)=248/(Raman shift(cm−1)of RBM)
It should be noted that “RBM” is described later.
In the present invention, average diameter obtained by the resonance Raman scattering measurement is defined that diameters obtained from peaks in the vicinity of 150 to 300 cm−1 (also including up to 310 cm−1) when performing the resonance Raman scattering measurement (excitation wavelength 488 nm) are multiplied by peak height; obtained values are added up; and the total amount is divided by the total amount of peak height. It is arguable whether or not there is quantitative property in peak height according to the resonance Raman scattering measurement, so that there are possibilities that measured average diameter is different from actual average diameter. However, in the result obtained from the transmission electron microscope, a sight is limited, and labor is necessary for the method to obtain diameter, with the result that in the present invention, average diameter is defined by the process using the resonance Raman scattering measurement.
According to the producing process of the present invention, it is possible to obtain the single-walled carbon nanotubes with high quality and high purity as described above. The composition containing the single-walled carbon nanotubes obtained by the producing process of the present invention is also included as the composition within the range of the present invention; and it is possible to point out six kinds of substances (1) to (6), which fulfill following conditions as the composition containing the single-walled carbon nanotube. According to the present invention, these are produced separately by controlling producing conditions.
A composition containing single-walled carbon nanotubes satisfying the conditions mentioned below; namely,
A composition containing single-walled carbon nanotubes satisfying the conditions mentioned below, namely,
A composition containing single-walled carbon nanotubes, wherein the maximum peak between 150 and 300 cm−1 is present at the position of 258±5 cm−1 when the composition containing single-walled carbon nanotubes is observed by a resonance Raman measurement (the excitation wavelength is 488 nm).
A composition containing single-walled carbon nanotubes, wherein the first maximum peak and the second maximum peak between 150 and 300 cm−1 are present at the position of 201±5 cm−1 and 258±5 cm−1, respectively, when the composition containing single-walled carbon nanotubes is observed by a resonance Raman measurement (the excitation wavelength is 488 nm).
A composition containing single-walled carbon nanotubes, wherein the maximum peak between 150 and 300 cm−1 is present at the position of 193±5 cm−1 when the composition containing single-walled carbon nanotubes is observed by a resonance Raman measurement (the excitation wavelength is 633 nm).
A composition containing single-walled carbon nanotubes, wherein the maximum peak between 150 and 300 cm−1 is present at the position of 288±5 cm−1 when the composition containing said single-walled carbon nanotubes is observed by a resonance Raman measurement (the excitation wavelength is 633 nm).
When performing thermal analysis of the composition containing single-walled carbon nanotubes at a temperature rising rate of 5° C./minute in the air, peak position of linear differential curve of weight decrease by burning is 500° C. or higher. Here, the thermal analysis is the analysis by means of a device called generally as TG/DTA. TG analysis (TGA) is the measurement in which weight decrease is measured when heating a specimen, while DTA is the measurement in which colorific and endoergic values are measured when heating a specimen. The linear differential curve of weight decrease by burning is generally called as DTG. When weight decrease is judged whether it depends on burning or not, appearance of peak value of heat generation at DTA is regarded as weight decrease by burning.
It is well known that yield and quality of the yielded single-walled carbon nanotubes can be evaluated by TGA. The example of TGA of a specimen yielded by the producing process of the present invention is shown in
Measurement procedure of TGA of the present invention is as follows. About 10 mg of the yielded specimen is held(kept) at 100° C. for 120 minutes to remove absorbed water, and is then subjected to a temperature rising rate of 5° C./minute. The air is used as atmosphere. In
It is well known that the oxidizing decomposition reaction temperature of the single-walled carbon nanotubes strongly depends on nanotube diameter and defect structure of tube wall. The larger the nanotube diameter is, the higher the temperature becomes; and the fewer the defect and higher the quality is, the higher the temperature becomes.
Namely, the higher the peak position of linear differential curve (DTG) of weight decrease by burning becomes, the fewer the defect and higher the heat resistance is. The single-walled carbon nanotubes obtained by the conventional producing process in which much catalyst to become oxidized catalyst adhere thereto, and even though metal catalyst is made to remove, there exist many defects, when performing thermal analysis in the air, only resulting in oxidation burning at low temperature. The single-walled carbon nanotubes obtained by the producing process of the present invention, even though thermal analysis is performed in the condition where catalyst adheres (condition where catalyst is not removed), the result in which the oxidation resistance is high as described above is obtained. Of course, when continuously reducing catalyst density within the composition containing the single-walled carbon nanotubes, namely, when continuously increasing amount of the single-walled carbon nanotubes, heat resistance of the carbon nanotube becomes high. As known from the embodiment, by controlling reaction condition, carbon nanotubes whose peak position is of 540° C. or more, 550° C. or more, 560° C. or more, 570° C. or more or 580° C. or more, respectively, are obtained.
The single-walled carbon nanotubes with high heat resistance do not exist in the world until now. It can be obtained for the first time in the present invention. Further, the half value width of the peak is 170° C. or lower. Like the peak position, when reducing catalyst density within composition containing the single-walled carbon nanotubes, the half value width is minimized. By controlling reaction condition, the carbon nanotubes whose half value width is 120° C. or lower, 100° C. or lower, 90° C. or lower, 80° C. or lower, 70° C. or lower, or 60° C. or lower as the most sharpest one are obtained.
Single-walled carbon nanotubes obtained by the present invention can achieve high heat resistance as described above even though it is in the initial condition of synthesize, namely in the condition where the catalyst is adhered thereon. It is expected that it is possible to make heat resistance higher by removing catalyst or by annealing in vacuum atmosphere.
For the composition containing single-walled carbon nanotubes of the present invention, G band is required to be observed in the vicinity of 1590 cm−1 and to be split when observed by resonance Raman scattering measurement (excitation wavelength 488 nm). Particularly, the carbon nanotubes with few defects has such split. Of course, although some single-walled carbon nanotubes obtained by the producing process of the present invention have not such a split, it is possible to obtain single-walled carbon nanotubes with a split at G band by selecting another reaction condition.
For the composition containing single-walled carbon nanotubes of the present invention, the ratio of the peak height in the vicinity of 1350 cm−1 (D band) to the peak height in the vicinity of 1590 cm−1 is required to be ⅓ or less, when observed by the resonance Raman scattering measurement (excitation wavelength of 488 nm). A few ratio of the peak height in the vicinity of 1350 cm−1 (D band) to the peak height in the vicinity of 1590 cm−1 represents that the obtained single-walled carbon nanotubes are of high quality. The ratio is preferably {fraction (1/10)} or less, more preferably {fraction (1/20)} or less. It is possible to obtain single-walled carbon nanotubes with a lower D/G ratio by controlling the condition. In Raman peak position of the present invention, “in the vicinity” means±10 cm−1.
It is preferable that diameters of single-walled carbon nanotubes are controllable and it is possible to control the diameter by temperature and partial pressure of the raw material, according to the present invention. Therefore a composition containing single-walled carbon nanotubes with a maximum peak of 258±5 cm−1 between 150 to 300 cm−1 when observed by means of the resonance Raman scattering measurement (excitation wavelength of 488 nm) and a composition containing single-walled carbon nanotubes with a maximum peak of 193±5 cm−1 or 250±5 cm−1 between 150 to 300 cm−1 when observed by means of resonance Raman scattering measurement (excitation wavelength of 633 nm) can be obtained. Particularly, in the case of single-walled carbon nanotubes of the present invention, it is characteristic that the peak of 258±5 cm−1 in RBM is the highest one or the second highest one when measured at an excitation wavelength of 488 nm. It is also characteristic that the peak of 201±5 cm−1 is the highest one when the peak of 258±5 cm−1 is the second.
An average diameter of 1.2 nm or less of single-walled carbon nanotubes are obtained by determining the average diameter as described above from the peaks obtained by the resonance Raman scattering measurement (excitation wavelength of 488 nm). It is preferable that single-walled carbon nanotubes are thin from the following reasons.
(1) It is easy to emit electron when used as electron emission material.
(2) Additional effects are large in the case of composite materials with resin or the like.
It is possible to produce single-walled carbon nanotubes by controlling the average diameter to be 1.1 nm or less, preferably 1.0 nm or less.
Since single-walled carbon nanotubes of the invention also has a characteristic of high purity, it is possible to obtain a photograph showing at least 30% of viewing area within 100 nm-square of sight is of the carbon nanotubes, and the carbon nanotubes of 95% or more are of single-walled carbon nanotubes by observing the composition containing single-walled carbon nanotubes with a transmission electron microscope (TEM) by million magnification or more.
According to the producing process of the present invention, it is possible to obtain single-walled carbon nanotubes as described above and also it is possible to obtain a composition containing single-walled carbon nanotubes as described above.
The process of the producing process of the present invention can be carried out in such a way that a catalyst is put in an electric furnace or the like and is raised up to the aforementioned heat temperature while keeping the aforementioned atmosphere temperature of the catalyst, but other than this means, it also can be carried out by putting the catalyst under a condition that the atmosphere and temperature are set as required by the present invention in advance, thus the process can be carried out as a combustion reaction.
Single-walled carbon nanotubes obtained by the producing process of the present invention is capable of applying to various fields where single-walled carbon nanotubes are actually used at present, or its possibility of use is suggested, for example, various kinds of electron device such as nano-scale wiring, field-effect transistor, field emission display emitter, various electron device elements such as a material for a negative electrode of a lithium secondary cell, gas adsorption material, hydrogen storage material, various kinds of composite materials, and so on. Other than these fields, it is possible to apply to various fields depending on characteristic of single-walled carbon nanotubes.
According to the present invention as described above, it is possible to produce single-walled carbon nanotubes of high quality with few defects, high heat resistance and high oxidation resistance, without being laced with multi-walled carbon nanotubes, amorphous carbons, carbon nanoparticles and the like. Further, mass-production of single-walled carbon nanotubes of high quality with few defects safely and in a high yield is possible.
Hereinafter, the present invention is further described in detail based on embodiments, however, the present invention is not limited by the embodiments.
Embodiment 1
[Synthesis of Catalyst]
A Y-type zeolite (HSZ-390HUA (produced by TOSOH Corporation: silica/alumina ratio=approximately 400) of about 1 g, iron acetate ((CH3COO)2Fe), and cobalt acetate ((CH3COO)2Co.4H2O) were prepared. Iron acetate and cobalt acetate were dissolved in ethanol of 20 cm3 so that iron and cobalt are to be 2.5 wt % respectively, and then Y-type zeolite was mixed therewith. Thereafter, ultrasound was applied for 10 minutes to the obtained mixture, and then it was dried at 80° C. for 24 hours to obtain yellow-white powder catalyst.
[Synthesis of Single-Walled CNT]
The above described yellow-white powder catalyst was put on a quartz board and then placed in a quartz tube in an electric furnace. While the inside of the furnace is being raised up to desired temperatures (600%, 650° C., 700° C., 800° C., 900° C.) (approximately for 30 minutes), the inside of the quartz tube (inner diameter: 27 mm) was put under Ar atmosphere. Concretely, Ar gas was introduced therein by 200 sccm.
After the temperature inside of the furnace reached the desired temperature, the inside of the quartz tube was evacuated to be under ethanol atmosphere maintaining the temperature for about 10 min. In this case, the ethanol pressure was 5-10 Torr (0.67-1.3 kPa), and the ethanol was introduced by 100-300 sccm using a vacuum pump. This flow rate can be calculated based on a decrease of ethanol per hour. Then, black powders A-1 to A-5 were obtained on the quartz board by lowering the temperature. The obtained black powders A-1 to A-5 were observed by resonance Raman scattering measurement (excitation wavelength: 488 nm), SEM (
The results are shown in Table 1 and the results of the Raman spectra analysis are shown in
(Diameter of a single-walled CNT)=248/Raman shift(cm−1)of RBM).
RBM will be explained later.
As shown in table 1, the higher the temperature was, the larger the diameter of single-walled carbon nanotubes was. Moreover, judging from the SEM images and the TEM images shown in
From
Namely, it was confirmed that a G band was observed in the vicinity of 1590 cm−1 and the G band was split in the reaction at 700° C. and higher; a peak (RBM: radial breathing mode) derived from single-walled carbon nanotubes and related to the diameter of single-walled carbon nanotubes were observed between 150 and 300 cm−1; and an undesired peak derived from amorphous carbon was not observed on single-walled carbon nanotubes of the present invention at 1350 cm−1, or the peak was low even if observed (Table 7).
Further, as a result of the thermal analysis of the sample A-4 at a temperature rising rate of 5° C./min in the air, a peak position of the linear differential curve of weight decrease by burning was at 543° C. The half value width of the peak was at 162° C. (
Moreover, the results of the Raman spectra analysis of the sample A-4 measured with excitation wavelength of 499 nm, 514 nm and 633 nm respectively are shown in
Further, concerning the other samples, Table 1 shows the results of maximum peak positions in RBM (150 to 300) of the Raman spectra analysis measured with an excitation wavelength of 633 nm. The results of RBM peak positions with an excitation wavelength of 488 nm are shown in Table 7.
Embodiment 2
Instead of ethanol used in the embodiment 1, methanol was used in the similar way, and black powder, namely, single-walled carbon nanotubes A-6 to A8 was obtained. The results of this are shown in Table 2. Moreover, the results of the Raman spectra analysis are shown in
As shown in Table 2, the higher the temperature was, the larger the diameter of single-walled carbon nanotubes was. Moreover, single-walled carbon nanotubes were confirmed to be of very high quality without defect from the unshown TEM (SEM) images (the image is similar to
Embodiment 3
Instead of the catalyst Fe/Co used in the embodiment 1, Ni/Co was used, and similarly, black powder, namely, single-walled carbon nanotubes A-9 was obtained. The results are shown in Table 3. Moreover, the results of the Raman spectrum analyses are shown in
From unshown TEM (SEM) image (images are similar to
Embodiment 4
Instead of zeolite, the supporting material for the catalyst Fe/Co, of the embodimenr 1, Mgo was used to obtain black powder, namely single-walled carbon nanotubes A-10. The result of this is shown in Table 4.
Single-walled carbon nanotubes were confirmed to be of very high quality without defect from unshown TEM (SEM) images (images are similar to
Embodiment 5
Single-walled carbon nanotubes A-11 and A-13 were obtained by the same process as used in the embodiment 1 for the synthesis of single-walled carbon nanotubes A-4. In the case of single-walled carbon nanotubes A-11, an ethanol pressure of 1 Torr (0.013 kPa) and a flow of 60 sccm were applied; and in the case of single-walled carbon nanotubes A-13, an ethanol pressure of 13 Torr (1.7 kPa) and a flow of 1840 sccm were applied. These preparation conditions are shown in Table 5 together with the average diameters of the obtained single-walled carbon nanotubes. In Table 5, single-walled carbon nanotubes A-12 corresponds to the single-walled carbon nanotubes A-4 in the embodiment 1. In addition, the results of the Raman spectra analysis on the single-walled carbon nanotubes A-11, A-12 and A-13 are shown in
According to unshown TEM and SEM images (similar to those in
Namely, pressure and flow of the carbon-source are considered to indicate the collision frequency between the carbon source and the catalyst. When the carbon-source pressure is low—for example, 6 Torr (0.78 kPa) or less—the collision frequency is low, and it is considered that sufficient time is available for annealing of single-walled carbon nanotubes. Accordingly, when the carbon-source pressure is low—for example, 6 Torr (0.78 kPa) or less—single-walled carbon nanotubes with a relatively large diameter can be obtained, and it is considered that the corresponding diameter distribution would be approximately uniform.
Conversely, when the carbon-source pressure is relatively high —for example, 13 Torr (1.7 kPa) or more—the collision frequency is high, and it is considered that sufficient time for annealing of single-walled carbon nanotubes would tend to decrease. Accordingly, when the carbon-source pressure is relatively high—for example, 13 Torr (1.7 kPa) or more—it is considered that the relative amount of single-walled carbon nanotubes with a relatively large diameter, for which a long annealing time is required, would tend to decrease.
Embodiment 6
Using Co (5% by weight) and diethyl ether instead of Fe/Co and ethanol as used in embodiment 1, under the process similar to those in embodiment 1 except for setting a diethyl ether pressure to 20 Torr (2.7 kPa), black powder—more specifically, single-walled carbon nanotubes A-14, A-15, and A-16—were obtained. The applied heating temperatures and the obtained results are shown in Table 6. In addition, the results of Raman spectral analysis on single-walled carbon nanotubes A-14, A-15 and A16 are shown in
As indicated by Table 6, the higher the temperature was, the larger was the average diameter of the obtained single-walled carbon nanotubes. Furthermore, according to the unshown TEM and SEM images (similar to those in
Embodiment 7
Under the process identical to those in embodiment 1, except for setting an electrical furnace temperature to 800° C., an ethanol pressure to 10 Torr (1.3 kPa) and reaction times to 10, 30, 60, 120, and 300 minutes respectively, black powder—more specifically, single-walled carbon nanotubes A-17 to A-21—were obtained. The electrical furnace temperature and the derived results are shown in Table 8. A-17 and A-4 represent identical samples.
Note
D/G: Ratio between D-band peak height D and G-band peak height G
P1: Position of the highest peak in RBM (i.e., 150 to 300 cm−1) during the Raman spectral analysis at an excitation wavelength of 488 nm.
P2: Position of the second highest peak in RBM (i.e., 150 to 300 cm−1) during the Raman spectral analysis at an excitation wavelength of 488 nm.
TG and DTG results for single-walled carbon nanotubes A-17 to A-21 are shown in
Even if the reaction time is increased, it can be seen from
Embodiment 8
Under the process similar to those in embodiment 7, except for setting an ethanol pressure to 5 Torr (0.67 kPa), black powder—more specifically, single-walled carbon nanotubes A-22 to A-26—were obtained. The electrical furnace temperature and the derived results are shown in Table 9.
Embodiment 9
Testing was carried out by varying the pressure under the identical process to those described in embodiment 5, and the TGA was measured. TGA and DTG are shown in
Although the yield of single-walled carbon nanotubes increases as the ethanol pressure is increased from 2 Torr (0.27 kPa), the increase stops at 10 Torr (1.3 kPa) or over, and between 10 Torr (1.3 kPa) and 20 Torr (2.7 kPa), the yield is approximately identical. As also described in embodiment 5, it is considered that insufficient annealing time for single-walled carbon nanotubes caused by the raised pressure deprives the yield of further increase.
Embodiment 10
The pale-yellow powder catalyst prepared in embodiment 1 put on a quartz board was placed inside a quartz tube in an electrical furnace. While the internal temperature of the electrical furnace rose to 800° C. (approximately for 30 minutes), an argon atmosphere was maintained within the quartz tube (27-mm internal diameter). Specifically, the argon gas was introduced at a flow rate of 200 sccm.
After the temperature reached 800° C., the argon-gas flow rate was increased to 600 sccm, and the temperature and flow of the argon gas were maintained while bubbling ethanol (at 0° C.) for 30 minutes, an ethanol atmosphere was created within the system. The partial pressure of ethanol during the process was a steam pressure at 0° C. of 12 Torr (1.6 kPa) and a flow of approximately 10 sccm was achieved. Following this, the temperature was decreased to obtain black powder on the quartz board.
The Raman spectra analysis (at an excitation wavelength of 488 nm), SEM measurement and TEM observation of the obtained black powder showed that single-walled carbon nanotubes of high quality with diameters between 0.8 and 1.5 nm were achieved.
The position of the highest peak between 150 and 300 cm−1 in the Raman spectrum measured at an excitation wavelength of 633 nm was 193 cm−1.
Embodiment 11
The pale-yellow powder catalyst prepared in embodiment 1 put on a quartz board was placed inside a quartz tube in an electrical furnace. While the internal temperature of the electrical furnace rose to 800° C. (approximately for 30 minutes), an argon atmosphere was maintained within the quartz tube (27-mm internal diameter). Specifically, the argon gas was introduced at a flow rate of 200 sccm.
After the temperature reached 800° C., the argon-gas flow rate was increased to 600 sccm, and the temperature and flow of the argon gas were maintained while bubbling ethanol (at −5° C.) for 30 minutes, an ethanol atmosphere was created within the system. The partial pressure of ethanol during the process was a steam pressure at −5° C. of between 5 and 10 Torr (0.67-1.3 kPa) and a flow of approximately 5-10 sccm. Following this, the temperature was decreased to obtain black powder on the quartz board.
The results of Raman spectra analysis (at an excitation wavelength of 488 nm), SEM measurement and TEM observation of the obtained black powder showed that single-walled carbon nanotubes of high quality with diameters between 0.8 and 1.5 nm were achieved.
The position of the highest peak between 150 and 300 cm−1 in the Raman spectra at an excitation wavelength of 633 nm was 193 cm−1.
Embodiment 12
The pale-yellow powder catalyst prepared in embodiment 1 put on a quartz board was placed inside a quartz tube in an electrical furnace. While the internal temperature of the electrical furnace rose to 850° C. (approximately for 30 minutes), an atmosphere of argon and hydrogen (hydrogen: 3% by volume) was maintained within the quartz tube (27-mm internal diameter). Specifically, the gaseous mixture of argon and hydrogen was introduced at a flow of 200 sccm.
After the temperature reached 850° C., the inside of the quartz tube was evacuated to create an ethanol atmosphere while maintaining the temperature. The time for creating the ethanol atmosphere was changed to 10, 60, and 120 minutes respectively. The partial pressure of ethanol during the process was 10 Torr (1.3 kPa), and a flow of approximately 300 sccm was achieved using a vacuum pump.
Single-walled carbon nanotubes (with catalyst metal removed) yielded by CNI's HipCO method were measured using Raman spectrum. The maximum RBM peak was 202 cm−1 when measured at an excitation wavelength of 488 nm; 186 cm−1 at an excitation wavelength of 514 nm; and 220 cm−1 at an excitation wavelength of 633 nm. Note that no split was identified in items except that a shoulder appeared on G band in the Raman spectrum. The average diameter derived from the spectrum measured at an excitation wavelength of 488 nm was 1.21 nm.
The present invention may be available for effective use in the production of carbon nanotubes and in the field of applications.
Number | Date | Country | Kind |
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2002-034758 | Feb 2002 | JP | national |
2002-311111 | Oct 2002 | JP | national |
Filing Document | Filing Date | Country | Kind |
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PCT/JP03/01468 | 2/13/2003 | WO |