SBIR Phase I: A Novel Semiconductor Memory Having Both Volatile and Non-Volatile Modes

Information

  • NSF Award
  • 0912771
Owner
  • Award Id
    0912771
  • Award Effective Date
    7/1/2009 - 16 years ago
  • Award Expiration Date
    12/31/2009 - 15 years ago
  • Award Amount
    $ 93,000.00
  • Award Instrument
    Standard Grant

SBIR Phase I: A Novel Semiconductor Memory Having Both Volatile and Non-Volatile Modes

This Small Business Innovation Research Phase I project seeks to demonstrate the high-density feasibility of a novel memory, which has both volatile and non-volatile functionality. Such memory combines the non-volatile memory's ability to retain information in the absence of power (such as Flash memory) and the fast access speed and reliability of a volatile memory (such as Static Random Access Memory (SRAM) or Dynamic Random Access Memory (DRAM)). This memory is fabricated using silicon-based fabrication process, eliminating the need of new materials or new process technology developments. <br/><br/>One of the many applications of the proposed memory is to enable power-efficient computing applications and mobile devices. A power-efficient memory such as the one proposed in this proposal can reduce the overall data center power consumption by up to 75%.<br/><br/>This award is funded under the American Recovery and Reinvestment Act of 2009 (Public Law 111-5).

  • Program Officer
    Ben Schrag
  • Min Amd Letter Date
    6/2/2009 - 16 years ago
  • Max Amd Letter Date
    6/2/2009 - 16 years ago
  • ARRA Amount
    93000

Institutions

  • Name
    Zeno Semiconductor, Inc.
  • City
    Cupertino
  • State
    CA
  • Country
    United States
  • Address
    10517 San Felipe Rd
  • Postal Code
    950143967
  • Phone Number
    6505753555

Investigators

  • First Name
    Yuniarto
  • Last Name
    Widjaja
  • Email Address
    ywidjaja@zenosemi.com
  • Start Date
    6/2/2009 12:00:00 AM

FOA Information

  • Name
    Industrial Technology
  • Code
    308000