Claims
- 1. A scanning magnetic microscope, comprising:
a specimen stage for holding a specimen to be examined; a magnetic tunneling junction (MTJ) sensor for sensing a magnetic field generated by said specimen; translation means for translating said MTJ sensor relative to a surface of said specimen; and a data processor, having an input coupled to an output of said MTJ sensor, for constructing an image of said magnetic field.
- 2. A scanning magnetic microscope as in claim 1, wherein said magnetic field image is constructed from an electrical current density map that is descriptive of electrical currents flowing within said specimen.
- 3. A scanning magnetic microscope as in claim 2, wherein said specimen is comprised of an integrated circuit.
- 4. A scanning magnetic microscope as in claim 1, wherein said specimen is comprised of a magnetic data storage media.
- 5. A scanning magnetic microscope as in claim 1, wherein said translation means is comprised of an optical sensor for detecting a height of said MTJ sensor relative to said surface.
- 6. A scanning magnetic microscope as in claim 1, wherein said MTJ sensor is comprised of a multilayer structure having the form: Si wafer/SiO2/Pt(30 nm)/Py(x)/FeMn(13 nm)/Py (6 nm)/Al2O3(0.5-2.5 nm)/Py(12 nm)/Al(49 nm), where a seed layer Py (x) is selected from one of either Fe79Ni21 with a thickness x between 2 to 10 nm, or Cu(1.5 nm)/Py (x) with x between 2 to 9 nm.
- 7. A scanning magnetic microscope as in claim 1, wherein said MTJ sensor is comprised of a multilayer structure having the form: Si wafer/SiO2/Ta(5 to 10 nm)/Py(x)/FeMn(13 nm)/Py (6 nm)/Al2O3(0.5-2.5 nm)/Py(12 nm)/Al(49 nm), where a seed layer Py (x) is selected from one of either Fe79Ni21 with a thickness x between 2 to 1O nm, or Cu(1.5 nm)/Py(x) with x between 2 to 9 nm.
- 8. A scanning magnetic microscope, comprising:
a specimen stage for holding a specimen to be examined; a sensor for sensing a magnetic field generated by said specimen, said sensor comprising a giant magnetoresistance (GMR) read/write head having a sensing area defined by a length (L) times a width (W), where W<L; translation means for translating said read/write head relative to a surface of said specimen, said read/write head being translated such that the width is perpendicular to the translation direction; and a data processor, having an input coupled to an output of said sensor, for constructing an image of said magnetic field.
- 9. A scanning magnetic microscope, comprising:
a specimen stage for holding a specimen to be examined; a sensor for sensing a magnetic field generated by said specimen, said sensor comprising one of a magnetic tunneling junction (MTJ) sensor, a spin valve sensor, or an extraordinary Hall effect sensor; translation means for translating said sensor relative to a surface of said specimen; and a data processor, having an input coupled to an output of said sensor, for constructing an image of said magnetic field.
- 10. A method for obtaining a magnetic field map for a specimen of interest, comprising:
mounting the specimen to a specimen stage; translating a magnetic tunneling junction (MTJ) sensor relative to a surface of said specimen for sensing a magnetic field generated by said specimen; and operating a data processor for constructing an image of said magnetic field.
- 11. A method as in claim 10, wherein said magnetic field image is constructed from an electrical current density map that is descriptive of electrical currents flowing within said specimen.
- 12. A method as in claim 11, wherein said specimen is comprised of an integrated circuit.
- 13. A method as in claim 10, wherein said specimen is comprised of a magnetic data storage media.
- 14. A method as in claim 10, wherein the step of translating comprises operating an optical sensor for detecting a height of said MTJ sensor relative to said surface.
- 15. A method as in claim 10, wherein the step of translating translates the MTJ sensor so as to contact or not contact said surface.
- 16. A method for examining an electromigration effect that occurs within an electrical conductor of an integrated circuit, comprising:
mounting the integrated circuit to a specimen stage; translating a magnetic sensor relative to a surface of said integrated circuit for sensing a magnetic field generated within said electrical conductor due to a current flow through said conductor; and operating a data processor for constructing an image of a current density within said electrical conductor, the current density being related to the electromigration effect.
- 17. A method as in claim 16, wherein the step of translating translates a magnetic tunneling junction (MTJ) sensor.
CLAIM OF PRIORITY FROM A PROVISIONAL PATENT APPLICATION
[0001] This patent application claims priority from copending provisional patent application no. 60/209,756, filed Jun. 06, 2000, the content of which is incorporated by reference herein in its entirety.
Provisional Applications (1)
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Number |
Date |
Country |
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60209756 |
Jun 2000 |
US |