Number | Date | Country | Kind |
---|---|---|---|
4-026093 | Jan 1992 | JPX |
Number | Name | Date | Kind |
---|---|---|---|
5175740 | Elman et al. | Dec 1992 | |
5297158 | Naitou et al. | Mar 1994 |
Number | Date | Country |
---|---|---|
62-147792 | Jul 1987 | JPX |
63-263789 | Oct 1988 | JPX |
1251684 | Oct 1989 | JPX |
258883 | Feb 1990 | JPX |
2172287 | Jul 1990 | JPX |
349289 | Mar 1991 | JPX |
Entry |
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Nakatsuka et al., "A New Self-Aligned Structure for (GaAl) As High Power Lasers with Selectively Grown Light Absorbing GaAs Layers Fabricated by MOCVD", Japanese Journal of Applied Physics vol. 25, No. 6 Jun., 1986, pp. L498-L500. |
Elman et al., "High Power 980nm Ridge Waveguide Lasers With Etch-Stop Layer", Electronics Letters, Oct. 24, 1991, pp. 2032 and 2033. |