The present invention relates in general to identifying sensitive or performance limiting areas or suspect locations of semiconductor devices, and more specifically to a system and method of multiplexing laser triggers and optically selecting multiplexed laser pulses for laser assisted device alteration testing of semiconductor devices including conditioning laser pulse power and jitter parameters and multiplexing and amplifying laser effects.
A variety of laser-based stimulation circuit testing techniques are known for failure or performance analysis of semiconductor devices. Laser stimulation involves the use of various forms of laser radiation with sufficient energy to modify operating behavior of semiconductor circuitry for the purpose of identifying potential problem areas of the semiconductor device. Although many types of radiation may be used, it is desired that the radiation convey sufficient energy to modify circuit operation for purposes of testing the limits of circuit operation. A laser beam, for example, is capable of conveying a significant level of power without damaging semiconductor circuitry and thus is often the radiation of choice for testing. The circuit modification may be any one or more of multiple types, such as modified timing of a device (e.g., transistor, gate, node, etc.), modified voltage level, modified current level, etc. A timing adjustment may reveal, for example, a race condition between two or more circuit paths thereby limiting maximum frequency of operation of the semiconductor device. Similarly, a marginal voltage or current level affecting pass-fail behavior may be revealed using laser perturbation during testing.
Embodiments of the present invention are illustrated by way of example and are not limited by the accompanying figures, in which like references indicate similar elements. Elements in the figures are illustrated for simplicity and clarity and have not necessarily been drawn to scale.
Laser assisted device alteration (LADA) is a laser scan technique used in the failure analysis of semiconductor devices. A laser generated or otherwise amplified by a laser scanning microscope (LSM) or the like is used to alter the operating characteristics of transistors, metal interconnects or other components on the semiconductor device under test (DUT) while it is electrically stimulated. Certain operating characteristics of the laser (e.g., wavelength, size, power, etc.) may be selected or otherwise adjusted to modify circuit characteristics, such as circuit timing and/or voltage or current levels. For example, a laser operating at a wavelength of approximately 1,064 nanometers (nm) produces localized photocurrents within active transistor layers in which the photo-generated currents modify circuit timing or voltage levels. Alternatively, a laser operating at a wavelength of approximately 1,340 nm produces localized heating which also alters circuit timing (e.g., slowing down of logic transitions).
It has been observed that photocurrent injection enables significantly larger timing shifts as compared to thermally induced alteration, so that photocurrent injection is more commonly used for “standard” LADA testing. Electrical stimulation of the DUT is usually performed by automated test equipment (ATE) which applies an ATE test loop or test pattern to the DUT and monitors the results. The term “ATE” as used herein refers to any test equipment or electronic device or system or the like which provides electrical stimulation to a DUT and which monitors results. The test pattern is designed by test engineers with multiple test vectors applied in sequential order to perform critical timing testing. The test equipment may also adjust one or more test variables, such as laser power, supply voltages, temperature, clock frequency, etc., to adjust operation relative to a pass-fail boundary of the voltage-frequency relationship (which may be plotted on a “shmoo” graph to illustrate the pass-fail boundary as known to those skilled in the art).
Earlier LADA testing was performed with continuous wave (CW) lasers. CW lasers, however, may cause a buildup of energy that can have an effect on the results and be detrimental to the test. A CW laser tends to transfer heat to the circuit injecting faults and causing latch-up issues. Nonetheless, CW lasers operated at low power are still useful in identifying suspect locations on the integrated circuit. Newer testing uses pulsed lasers with low duty cycle that achieves superior testing results without thermal buildup. Time-Resolved LADA (TR-LADA) provides improved test results as compared to conventional techniques, including CW LADA. TR-LADA provides significantly smaller localization, reduced complexity of speed path mapping and timing, improved observation of specific defect sites, improved fault isolation workflow for both speed path and functionally defective devices, etc.
The pulse laser has a continuous wave (CW) power output that is the result of the fiber amplifier reaching an excitation state which produces significant amplified spontaneous emission (ASE). The CW ASE output increases when a significantly long delay is interposed between successive laser pulses. The CW ASE output can interact with the DUT directly and interfere with the desired effect of the laser pulse. Furthermore the power level of the laser pulse is effected by the excitation level in the fiber, so when high ASE is present a more amplified laser pulse is generated which can damage the DUT. In addition to ASE and pulse power levels, the time from trigger to laser pulse output is also effected by the time between the laser pulses. For example, the laser pulse timing can be affected by the repetition rate and will therefore appear to show varying delay times and jitter when different repetition rates are used so that the laser pulse is not asserted precisely at the intended time. Additionally, the pulse energy versus time tends to spread or smear so that pulse becomes less defined in time and thus is less effective for test purposes. Furthermore, if the delay between pulses is excessively long, the pulse laser unit may simply shut off.
Semiconductor fabrication continues to improve. A laser scanning microscope image of a chip fabricated using a 55 nanometer (nm) or even down to a 40 nm process is often able to reveal individual transistor sites for more localized testing. The same laser scanning microscope image of a chip fabricated using a non-planar 16 nm FinFET technology including 3 dimensional (3D) information, however, can be very blurry so that individual devices are not readily discernible. There is a need to identify suspect locations and to accurately align each suspect location with the underlying circuitry for all types of semiconductor fabrication technology.
In semiconductor debug and failure analysis there are several dynamic laser analysis techniques that require stable power level and low time jitter laser pulses. The present inventors have recognized the need for preconditioning the circuitry of the device under test (DUT) and for identifying the location of suspect locations relative to the underlying circuit elements. They have therefore developed a system and method of multiplexing laser triggers and optically selecting multiplexed laser pulses for laser assisted device alteration testing of a semiconductor integrated circuit. A trigger mode controller multiplexes asynchronous pulse triggers and one or more probe pulse triggers to the trigger input of a pulse laser, which outputs multiplexed laser pulses. The trigger controller also controls a laser pulse modulator to select from among the multiplexed laser pulses to provide selected laser pulses to a scanning microscope.
The asynchronous pulse triggers generate asynchronous laser pulses that condition the pulse laser to provide one or more synchronous probe laser pulses with stable power level and low jitter. One or more asynchronous laser pulses may be passed by the laser pulse modulator just before a synchronous probe laser pulse to precondition the circuitry of the semiconductor device and thereby amplify the effects of the synchronous probe laser pulse. A series of asynchronous laser pulses may be passed by the laser pulse modulator subsequent to the synchronous probe laser pulse to generate single event upset (SEU) information in the same image providing suspect location information generated by the synchronous probe laser pulse. The SEU information is used to align the combined image to computer-aided design (CAD) masks or the like to more accurately identify the underlying circuitry at the suspect location.
The laser test system 100 is configured to perform several different test operations as further described herein. In general, the LSM 110 and the ATE 114 may be controlled to perform LADA testing to identify any “suspect locations” and to further identify the circuit components causing problem behavior. These “suspect locations” may include performance limiting areas or defective components or circuits or the like, and may include locations in which laser radiation is used to modify timing, voltage, and/or current level to identify race conditions, timing issues, pass-fail behavior, etc. In some embodiments, a laser beam is utilized that is capable of conveying a significant level of power without damaging semiconductor circuitry of the DUT 104, yet may convey sufficient energy to modify circuit operation for purposes of testing the limits of circuit operation of the DUT 104 while being tested by the ATE 114. The circuit modification may be any one or more of multiple types, such as modified timing of a device (e.g., transistor, gate, node, etc.), modified voltage level, modified current level, modified resistance, etc. A timing adjustment may reveal, for example, a race condition between two or more circuit paths thereby limiting maximum frequency of operation of the DUT 104. Similarly, a marginal voltage or current or resistance level affecting pass-fail behavior may be revealed using radiation perturbation during testing. It is appreciated that many other measurable variations of a device may be monitored for determining pass-fail behavior, such as an input/output (I/O) voltage level or timing, VDD or pin current, output frequency, a signal slew rate, etc.
The ATE 114 is configured to program any initial conditions or states of the DUT 104 and/or to provide one or more selected test patterns appropriate for the DUT 104 and to monitor and store test results. The ATE 114 may further be configured to adjust any one or more of selected operating conditions or parameters, such as voltage supply levels, clock frequency, temperature, etc. The test results from the ATE 114 may be forwarded to the computer control unit 116. The computer control unit 116 controls the optical switch 108 to select either laser pulses LP from the pulse laser system 102 or a continuous wave laser CWL provided by the CW laser 106 depending upon the test being performed, and the selected laser source is provided to the LSM 110. The LSM 110 applies the selected laser source as a laser beam 124 to the DUT 104. The LSM 110 scans an area of interest (entire circuit area of DUT 104 or a selected portion thereof) at an imaging power level, and a laser beam reflection 126 is reflected back to the LSM 110 to capture a reflected image. The reflected image may be provided to the computer control unit 116 for storage and/or display on the display device 118.
At next block 204, one or more timing scan tests are performed to generally identify timing of each identified suspect location of the DUT 104. In one embodiment, TR-LADA techniques may be applied using laser pulses generated by the pulse laser system 102 to identify the timing associated with each suspect location. As an example, the local area surrounding the X/Y coordinates of a suspect location is selected, and the selected area is scanned, pixel by pixel, while applying laser pulses during the electronic test loop procedure. In one embodiment, a train of laser pulses at a 10 megahertz (MHz) rate may be applied to a pixel during the test loop providing first test feedback, the laser pulse train is advanced in time by an incremental amount, and the test procedure repeated for the same pixel until a laser pulse has been applied for each incremental time unit. For example, a pulse width of 25 picoseconds (ps) may be selected, each separated by 100 nanoseconds (ns), in which the entire pulse train is advanced by 5 ps for each test iteration. The test results are consolidated and evaluated to identify the timing associated with the suspect location of interest. It is noted that the TR-LADA techniques not only identify timing information, but may also be used to refine the X/Y information.
Once the X/Y and timing information is obtained, it is desired to identify the specific circuit device or devices associated with each suspect location. Such identification was more easily achieved with older technologies, such as fabrication using 55 nm processes and the like, but is more difficult with more modern fabrication, such as non-planar 16 nm FinFET technology and the like. SEU scans may be made to locate bi-stable devices such as flip-flops or the like; however, alignment between the SEU and TR-LADA images has proved challenging.
At next block 206, multiplexed scan testing is performed in which synchronous and asynchronous laser pulses are applied to the DUT 104 in a local area surrounding the X/Y coordinates of a suspect location to provide a combined image. This may be repeated for each set of X/Y locations. The synchronous laser pulse is synchronized with the test loop applied by the ATE 114 and driven with sufficient power to cause the greatest perturbation when the laser beam 124 is at or near the suspect location. The asynchronous laser pulses are asserted to identify SEU locations within the local area, and are asserted only with sufficient power level to upset a flip-flop when the laser pulse is applied to the flip-flop when being clocked or otherwise attempting to change state. Although the asynchronous laser pulses are not synchronized with the test being conducted by the ATE 114, a sufficient number are included and asserted at a sufficient rate to increase the likelihood of upsetting substantially all of the flip-flops in the local area during scan testing. The ability to combine the synchronous and asynchronous information into a single combined scan image eliminates alignment issues since each suspect location is mapped along with circuit flip-flops in the same scan image.
At next block 208, the SEU pattern of the combined image is aligned with CAD masking flip-flop location information to identify the circuit area of interest including the suspect location. The SEU and flip-flop location patterns are compared and matched and the image may be updated to include the flip-flop locations. At next block 210, the CAD mask information including the circuitry information that has been aligned with the combined image is combined with the TR-LADA information to identify the underlying circuitry at the precise location of the suspect location. Essentially, the SEU information is replaced with the aligned CAD mask so that the TR-LADA information identifying the suspect location is now precisely aligned with the circuitry. In this manner, the specific circuit components and devices associated with the suspect location can be identified.
The trigger mode controller 306 has control inputs receiving the MODE and TLS signals and the TDEL value, a first trigger input receiving a conditioning trigger (CT) signal, a second trigger input receiving a probe trigger (PT) signal, an output providing the ST signal to the trigger input of the pulse laser 302, and control outputs providing the GATE and ATTEN signals. The conditioning pulse trigger module 308 receives the P_RATE signal and asserts asynchronous trigger pulses on the CT signal at the selected pulse rate, such as 10 MHz, 20 MHz, 50 MHz, etc. The trigger pulses are considered asynchronous relative to tests performed by the ATE 114. The probe pulse trigger module 310 receives the TLS signal from the ATE 114 indicating the start of a test loop, receives the TDEL value, and provides a synchronized probe trigger pulse on the PT signal after a predetermined delay determined by TDEL. TDEL may be determined from TR-LADA timing information based on timing scan testing as previously described. The synchronized probe trigger pulse asserted on the PT signal is synchronized with the tests performed by the ATE 114 since asserted at a timing delay specified by TDEL relative to TLS.
In operation, the pulse laser 302 may be set up or otherwise programmed to output laser pulses on the MLP signal according to particular characteristics, such as having a particular width (e.g., 25 ps) and at a specified power level. The computer control unit 116 specifies the mode of operation and asserts the MODE signal accordingly, and specifies the rate of asynchronous pulses and asserts the P-RATE signal accordingly. The pulse trigger module 308 receives P_RATE and outputs trigger pulses on the CT signal at the specified pulse rate. The probe pulse trigger module 310 asserts a probe trigger pulse on the PT signal after the predetermined delay (TDEL) after each assertion of the TLS signal. The trigger mode controller 306 effectively operates as a multiplexer for selecting between CT and PT for providing selected trigger pulses on ST. Generally, the trigger mode controller 306 selects the CT signal until a synchronized probe trigger pulse is scheduled on the PT signal, then switches to the select the PT signal to convey the probe trigger pulse, and then switches back to the CT signal. The trigger mode controller 306 may use the TLS signal and the TDEL value to determine the timing of the synchronized probe trigger pulse.
The trigger mode controller 306 asserts the GATE and ATTEN signals based on the mode of operation as further described herein. The laser pulse modulator 304 effectively operates as a pass gate for passing only selected laser pulses on MLP to LP. In the illustrated configuration, the laser pulse modulator 304 passes laser pulses asserted on MLP to the LP signal when GATE is asserted high, and otherwise blocks the laser pulses on MLP when GATE is negated low. The ATTEN signal is used to control the relative power and/or magnitude of the laser pulses passed onto the LP signal. If the ATTEN signal indicates 100%, then the laser pulse is effectively passed at full power. Otherwise, the laser pulse power and/or magnitude is attenuated by a percentage amount based on the level indicated by the ATTEN signal. As an example, it may be desired to pass a synchronous probe laser pulse generated in response to a trigger pulse on PT at full power, but to attenuate the power level of asynchronous conditioning pulses asserted in response to trigger pulses on the CT signal.
The TSEL signal is initially low after time t0 so that the trigger mode controller 306 selects the asynchronous trigger pulses on CT as the selected trigger pulses asserted on the ST signal. The asynchronous trigger pulses cause the pulse laser 302 to output a corresponding series of asynchronous conditioning laser pulses on the MLP signal. Just prior to time tp at a time ts1, the TSEL signal is asserted high to select PT as ST. Initially there are no trigger pulses asserted on PT so that the series of asynchronous laser pulses on the MLP signal are temporarily stopped. Then at time tp subsequent to time ts1, the trigger pulse occurs on PT, which causes the pulse laser 302 to assert a synchronized probe laser pulse 402 on MLP. Then after another delay from time tp, the TSEL is asserted back low at time ts2 to select CT once again. After time ts2, the pulse laser 302 once again asserts a series of asynchronous laser pulses on the MLP signal in response to the CT trigger pulses.
It is noted that TSEL is asserted high a specified pre delay period (predp) before tp at time ts1 and is asserted back low at time ts2 after a specified post delay period (postdp) from time tp (e.g., ts1=tp−predp and ts2=tp+postdp). The pre delay period predp from ts1 to tp and the post delay period postdp from tp to ts2 are configured to provide a timing guard band or the like to sufficiently isolate the synchronized probe laser pulse 402 from the asynchronous conditioning laser pulses on the MLP. The predp and postdp periods may be programmed or otherwise preset in which the relative timing is based on the TLS signal and the TDEL value (which determines tdel).
The first mode of operation shown in
The first mode of operation may be used for TR-LADA during timing scan testing as shown and described for block 204 in
The second mode of operation shown in
The second mode of operation may also be used for TR-LADA during timing scan testing as shown and described for block 204 in
The third mode of operation shown in
The image 704 includes the suspect location 710 and the upset locations 712 coincident with flip-flop locations 714 transcribed from corresponding CAD mask information. The flip-flop locations 714 are shown in simplified form as rectangular shapes. In general, the pattern of upset locations 712 of the image 702 is compared with and matched to a corresponding pattern of flip-flops of the CAD mask in the local area of interest. Once this mapping is performed and matched, the specific circuit location of the suspect location 710 can be determined relative to the flip-flop locations 714.
The image 706 is a zoomed in depiction of the circuit area immediately surrounding the suspect location 710. The image 706 includes the suspect location 710 combined with the aligned CAD image precisely locating the underlying circuit component geometry relative to the suspect location 710. The aligned CAD image is shown in simplified form as corresponding geometric shapes. In this manner, the circuit elements and components located at the specific suspect location 710 can be readily and accurately identified and evaluated.
A combination of the second and third operating modes is contemplated. Although not specifically shown, the GATE signal may be asserted high to include both the preconditioning laser pulses 502 and the alignment laser pulses 602 along with the synchronized probe laser pulse 404.
A pulse laser test system according to one embodiment includes a conditioning pulse circuit, a probe pulse circuit, a pulse laser, a trigger mode controller, and a laser pulse modulator. The conditioning pulse circuit has an output that provides asynchronous conditioning trigger pulses at a selected rate. The probe pulse circuit has an output that provides a synchronized probe trigger pulse. The pulse laser has a pulse trigger input and a laser output providing a laser pulse for each trigger pulse provided to the pulse trigger input. The trigger mode controller provides selected trigger pulses to the pulse trigger input of the pulse laser. In particular, the trigger mode controller selects the output of the probe pulse circuit while the synchronized probe trigger pulse is provided causing the pulse laser to provide a synchronized probe laser pulse, and the trigger mode controller otherwise selects the output of the conditioning pulse circuit causing the pulse laser to provide asynchronous conditioning laser pulses. The laser pulse modulator has an optical input coupled to the laser output of the pulse laser, has a gating input receiving a gate signal from the trigger mode controller, and has an optical output that provides laser pulses passed from the pulse laser while the gate signal is asserted.
The asynchronous conditioning laser pulses generated by the pulse laser reduce the ASE (excitation level) so that the CW output is reduced and stable pulse powers are achieved. Stated another way, the asynchronous conditioning laser pulses prevent the ASE power output so that the synchronized probe laser pulse is generated cleanly without time jitter or power variation or smear.
The trigger mode controller controls the gate signal to pass any of the laser pulses output from the pulse laser. The trigger mode controller may assert the gate signal to pass only the synchronized probe laser pulse, or to pass the synchronized probe laser pulse and at least one of asynchronous conditioning laser pulse provided before the synchronized probe laser pulse, or to pass the synchronized probe laser pulse and at least one asynchronous conditioning laser pulse provided after the synchronized probe laser pulse, or a to pass the synchronized probe laser pulse and at least one asynchronous conditioning laser pulses before and after the synchronized probe laser pulse. Asynchronous conditioning laser pulses passed before the synchronized probe laser pulse may be used to condition the circuitry of a semiconductor device being tested. Asynchronous conditioning laser pass provided after the synchronized probe laser pulse may be used to generate single event upset (SEU) data for alignment purposes.
The trigger mode controller further may provide an attenuation signal that causes the laser pulse modulator to attenuate any of the laser pulses that are passed by an amount indicated by the attenuation signal. The pulse laser test system may include automated test equipment that provides a test loop start signal to the probe pulse module to determine timing of providing the synchronized probe trigger pulse. The trigger mode controller insert a predetermined pre pulse delay before the synchronized probe trigger pulse and a predetermined post pulse delay after the synchronized probe pulse trigger.
A method of generating laser pulses for laser assisted device alteration testing according to one embodiment includes providing asynchronous conditioning trigger pulses at a selected rate, providing a synchronized probe trigger pulse while the asynchronous conditioning trigger pulses are provided, selecting the synchronized probe trigger pulse when provided and otherwise selecting the asynchronous conditioning trigger pulses and providing selected trigger pulses to a pulse trigger input of a pulse laser, generating, by the pulse laser, multiplexed laser pulses in response to the selected trigger pulses including asynchronous conditioning laser pulses before and after a synchronized probe laser pulse, and modulating the multiplexed laser pulses to pass at least the synchronized probe laser pulse for laser assisted device alteration testing.
Although the present invention has been described in connection with several embodiments, the invention is not intended to be limited to the specific forms set forth herein. On the contrary, it is intended to cover such alternatives, modifications, and equivalents as can be reasonably included within the scope of the invention as defined by the appended claims. For example, variations of positive logic or negative logic may be used in various embodiments in which the present invention is not limited to specific logic polarities, device types or voltage levels or the like. The terms “a” or “an,” as used herein, are defined as one or more than one. Also, the use of introductory phrases such as “at least one” and “one or more” in the claims should not be construed to imply that the introduction of another claim element by the indefinite articles “a” or “an” limits any particular claim containing such introduced claim element to inventions containing only one such element, even when the same claim includes the introductory phrases “one or more” or “at least one” and indefinite articles such as “a” or “an.” The same holds true for the use of definite articles. Unless stated otherwise, terms such as “first” and “second” are used to arbitrarily distinguish between the elements such terms describe. Thus, these terms are not necessarily intended to indicate temporal or other prioritization of such elements.
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