Claims
- 1. A system for eliminating a short circuit current path through a photovoltaic device of the type including at least one active semiconductor region overlying a substrate and a layer of transparent conductive material overlying said at least one active region, said short circuit current path extending from the substrate through the semiconductor region to said transparent conductive layer, said system comprising means for detecting the location of said short circuit current path and means for increasing substantially the resistivity of said short circuit current path selectively at the interface between said transparent conductive material and said semiconductor region.
- 2. A system as defined in claim 1 wherein said detecting means include voltage source means for applying a voltage between said conductive transparent material and said at least one active region, and means for sensing when the current through said device is above a predetermined limit.
- 3. A system as defined in claim 2 wherein said voltage is less than the forward conduction bias voltage of said device.
- 4. A system as defined in claim 2 wherein said voltage source means are arranged to apply said voltage in the direction of forward bias of said device.
- 5. A system as defined in claim 2 wherein said voltage source means are arranged to apply said voltage in the direction of reverse bias of said device.
- 6. A system as defined in claim 2 further including a conductive solution contacting said conductive transparent material for applying said voltage to said device.
- 7. A system as defined in claim 6 wherein said conductive solution is also an etching solution.
- 8. A system for eliminating a short circuit current path through a photovoltaic device of the type including at least one active semiconductor region overlying a substrate and a layer of transparent conductive material overlying said at least one active region, said short circuit current path extending from the substrate through the semiconductor region to said transparent conductive layer, said system including means for increasing the resistivity of said short circuit current path selectively at the interface between said transparent conductive material and said semiconductor region, said means further comprising etching means for applying a thin layer of an etching solution to said conductive transparent material in the area of said short circuit current path, said etching solution being adapted to etch said conductive transparent material in the presence of an electrical current for removing said conductive transparent material from electrical connection with said short circuit current path, and means for passing a current through said short circuit current path and said etching solution.
- 9. A system as defined in claim 8 wherein said etching solution is an acid, alkaline, or salt electrolyte solution.
- 10. A system as defined in claim 9 wherein said solution is diluted hydrochloric acid.
- 11. A system as defined in claim 8 further including means for applying an insulating material to the area of the device where said transparent conductive material has been etched.
- 12. In an apparatus for making photovoltaic devices of the type including at least one active semiconductor region overlying a conductive substrate and a layer of conductive transparent material overlying said at least one active region, a system for eliminating short circuit current paths extending from said substrate, through said at least one active region, and to said layer of transparent conductive material, said system comprising:
- voltage source means for applying a voltage to said device between discrete areas of said transparent conductive layer and said substrate, said voltage being less than the forward conduction bias voltage of said device;
- detecting means for detecting when the current through the device is above a predetermined limit for locating the short circuit current paths through the device; and
- means for isolating said transparent conductive material electrically from said short circuit current paths.
- 13. A system as defined in claim 12 further including a source of conductive solution for applying said voltage to said transparent conductive material, said conductive solution making discrete area contact with said transparent conductive material.
- 14. A system as defined in claim 13 wherein said conductive solution is an etching solution capable of etching said transparent conductive material in the presence of a current for removing and isolating said transparent conductive material electrically from said short circuit current paths.
- 15. A system as defined in claim 14 wherein said transparent conductive material is an alloy of indium, tin, and oxygen, and wherein said etching solution is hydrochloric acid.
- 16. A system as defined in claim 14 further including means for applying an insulating material to said at least one active region in said areas wherein said transparent conductive material has been etched.
- 17. A system as defined in claim 14 including a plurality of said etching solution sources, each said source making discrete area contact with said transparent conductive material, said etching solution sources being arranged in side-by-side relation, and means for continuously advancing said device past said etching solution sources for continuously detecting and eliminating said short circuit current paths across the entire width and length of the device.
- 18. A system as defined in claim 17 further including a plurality of insulating material applicators, each said applicator corresponding to a respective given one of said etching solution sources, and means for actuating said applicators to apply an insulating material over the discrete areas etched by their corresponding etching solution sources.
- 19. A system as defined in claim 18 further including means for removing residual etching solution from said device prior to the application of said insulating material to said discrete areas.
Parent Case Info
This is a division of application Ser. No. 435,890 filed Oct. 21, 1982, now U.S. Pat. No. 4,451,970.
US Referenced Citations (2)
Foreign Referenced Citations (2)
Number |
Date |
Country |
57-24544 |
Feb 1980 |
JPX |
56-69872 |
Jun 1981 |
JPX |
Divisions (1)
|
Number |
Date |
Country |
Parent |
435890 |
Oct 1982 |
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