Atsushi Yagishita

Person

Yokohama-Shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 9,613,974
- Issue date Apr 4, 2017
- Kabushiki Kaisha Toshiba
- Hiroki Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 8,338,889
- Issue date Dec 25, 2012
- Kabushiki Kaisha Toshiba
- Akio Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 8,138,031
- Issue date Mar 20, 2012
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device having a source ext...
- Patent number 8,124,465
- Issue date Feb 28, 2012
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 8,053,292
- Issue date Nov 8, 2011
- Kabushiki Kaisha Toshiba
- Akio Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 7,915,130
- Issue date Mar 29, 2011
- Kabushiki Kaisha Toshiba
- Tomohiro Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method manufacturing semiconductor device
- Patent number 7,795,682
- Issue date Sep 14, 2010
- Kabushiki Kaisha Toshiba
- Akio Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device using dummy gate wirin...
- Patent number 7,772,076
- Issue date Aug 10, 2010
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,723,171
- Issue date May 25, 2010
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 7,608,890
- Issue date Oct 27, 2009
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,537,978
- Issue date May 26, 2009
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a schottky source/drain transistor
- Patent number 7,488,631
- Issue date Feb 10, 2009
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 7,479,423
- Issue date Jan 20, 2009
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 7,465,624
- Issue date Dec 16, 2008
- Kabushiki Kaisha Toshiba
- Kazuaki Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,462,917
- Issue date Dec 9, 2008
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,405,449
- Issue date Jul 29, 2008
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,371,644
- Issue date May 13, 2008
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 7,314,787
- Issue date Jan 1, 2008
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a Schottky source/drain transistor
- Patent number 7,247,913
- Issue date Jul 24, 2007
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 7,242,064
- Issue date Jul 10, 2007
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device
- Patent number 7,214,576
- Issue date May 8, 2007
- Kabushiki Kaisha Toshiba
- Akio Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,208,797
- Issue date Apr 24, 2007
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,208,353
- Issue date Apr 24, 2007
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 7,198,994
- Issue date Apr 3, 2007
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,064,024
- Issue date Jun 20, 2006
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 6,979,846
- Issue date Dec 27, 2005
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a substrate having shallow trench isolation
- Patent number 6,919,260
- Issue date Jul 19, 2005
- Kabushiki Kaisha Toshiba
- Kaori Umezawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a MISFET having a schottky junctioned silicide
- Patent number 6,887,747
- Issue date May 3, 2005
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 6,879,001
- Issue date Apr 12, 2005
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of CMOS devices
- Patent number 6,815,279
- Issue date Nov 9, 2004
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20160268285
- Publication date Sep 15, 2016
- KABUSHIKI KAISHA TOSHIBA
- Hiroki OKAMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20160260712
- Publication date Sep 8, 2016
- KABUSHIKI KAISHA TOSHIBA
- Atsushi YAGISHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20150263161
- Publication date Sep 17, 2015
- KABUSHIKI KAISHA TOSHIBA
- Atsushi YAGISHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20140138761
- Publication date May 22, 2014
- Kabushiki Kaisha Toshiba
- Atsushi YAGISHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SAME
- Publication number 20130134506
- Publication date May 30, 2013
- Kabushiki Kaisha Toshiba
- Atsushi YAGISHITA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing semiconductor device
- Publication number 20120012935
- Publication date Jan 19, 2012
- Kabushiki Kaisha Toshiba
- Akio Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing semiconductor device
- Publication number 20100304555
- Publication date Dec 2, 2010
- Kabushiki Kaisha Toshiba
- Akio Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20100184261
- Publication date Jul 22, 2010
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing semiconductor device
- Publication number 20100081240
- Publication date Apr 1, 2010
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20100035396
- Publication date Feb 11, 2010
- Kabushiki Kaisha Toshiba
- Tomohiro Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device having a schottky source/drain transistor
- Publication number 20070243677
- Publication date Oct 18, 2007
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20070235819
- Publication date Oct 11, 2007
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method manufacturing semiconductor device
- Publication number 20070190708
- Publication date Aug 16, 2007
- Akio Kaneko
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20070176237
- Publication date Aug 2, 2007
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20070172997
- Publication date Jul 26, 2007
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method of semiconductor device
- Publication number 20070148937
- Publication date Jun 28, 2007
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20070148843
- Publication date Jun 28, 2007
- Tomohiro Saito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20070120204
- Publication date May 31, 2007
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device
- Publication number 20070099385
- Publication date May 3, 2007
- Kazuaki Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET and method for manufacturing the same
- Publication number 20070045736
- Publication date Mar 1, 2007
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20070023795
- Publication date Feb 1, 2007
- KABUSHIKI KAISHA TOSHIBA
- Hajime Nagano
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing semiconductor device
- Publication number 20070004117
- Publication date Jan 4, 2007
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060273413
- Publication date Dec 7, 2006
- Motoyuki Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20060275988
- Publication date Dec 7, 2006
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of fabricating the same
- Publication number 20060194378
- Publication date Aug 31, 2006
- Kabushiki Kaisha Toshiba
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20060099749
- Publication date May 11, 2006
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060071291
- Publication date Apr 6, 2006
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method for manufacturing the same
- Publication number 20060011986
- Publication date Jan 19, 2006
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20050253196
- Publication date Nov 17, 2005
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacture the same
- Publication number 20050205938
- Publication date Sep 22, 2005
- Atsushi Yagishita
- H01 - BASIC ELECTRIC ELEMENTS

Atsushi Yagishita

Person

Patents Grantslast 30 patents

Semiconductor device and method for manufacturing the same

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device and method of manufacturing semiconductor device

Method for manufacturing a semiconductor device having a source ext...

Semiconductor device and method of manufacturing semiconductor device

Method of manufacturing a semiconductor device

Semiconductor device and method manufacturing semiconductor device

Method of manufacturing semiconductor device using dummy gate wirin...

Semiconductor device and method of fabricating the same

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device having a schottky source/drain transistor

Semiconductor device and manufacturing method of semiconductor device

Method of manufacturing semiconductor device

Semiconductor device and method of fabricating the same

Semiconductor device and method of manufacturing the same

Semiconductor device and method of fabricating the same

Method of manufacturing a semiconductor device

Semiconductor device having a Schottky source/drain transistor

Semiconductor device and method of manufacturing the same

Manufacturing method of semiconductor device

Semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device and method of fabricating the same

Semiconductor device and manufacturing method thereof

Method of manufacturing a substrate having shallow trench isolation

Method of forming a MISFET having a schottky junctioned silicide

Semiconductor device and manufacturing method of semiconductor device

Manufacturing method of CMOS devices

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR STORAGE DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SAME

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device and method of manufacturing semiconductor device

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device having a schottky source/drain transistor

Semiconductor device and method for manufacturing the same

Semiconductor device and method manufacturing semiconductor device

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method of semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method thereof

Method of manufacturing semiconductor device

FinFET and method for manufacturing the same

Semiconductor device and method of fabricating the same

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

Semiconductor device and method of manufacturing the same

Semiconductor device and method for manufacturing the same

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacture the same