Chia-Wen Zhong

Person

Hsinchu, TW

People

Patents Grantslast 30 patents

Information Patent Grant
Cleaning chamber for metal oxide removal
- Patent number 12,211,737
- Issue date Jan 28, 2025
- Taiwan Semiconductor Manufacturing Company, Ltd
- Yen-Liang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an upper conductive structure having multilayer...
- Patent number 11,973,050
- Issue date Apr 30, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bottom-electrode interface structure for memory
- Patent number 11,792,996
- Issue date Oct 17, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Tzu-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
UPPER CONDUCTIVE STRUCTURE HAVING MULTILAYER STACK TO DECREASE FABR...
- Publication number 20240404975
- Publication date Dec 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLEANING CHAMBER FOR METAL OXIDE REMOVAL
- Publication number 20240371685
- Publication date Nov 7, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Liang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240298555
- Publication date Sep 5, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Sheng-Siang Ruan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UPPER CONDUCTIVE STRUCTURE HAVING MULTILAYER STACK TO DECREASE FABR...
- Publication number 20240021561
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE...
- Publication number 20230403956
- Publication date Dec 14, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chin I WANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM-ELECTRODE INTERFACE STRUCTURE FOR MEMORY
- Publication number 20230363178
- Publication date Nov 9, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Tzu-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FILM SCHEME TO REDUCE PLASMA-INDUCED DAMAGE
- Publication number 20230343642
- Publication date Oct 26, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wen Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION BARRIER TO MITIGATE DIRECT-SHORTAGE LEAKAGE IN CONDUCTIVE...
- Publication number 20230134560
- Publication date May 4, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Chia-Wen Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLEANING CHAMBER FOR METAL OXIDE REMOVAL
- Publication number 20230062974
- Publication date Mar 2, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Yen-Liang Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BOTTOM-ELECTRODE INTERFACE STRUCTURE FOR MEMORY
- Publication number 20220328508
- Publication date Oct 13, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UPPER CONDUCTIVE STRUCTURE HAVING MULTILAYER STACK TO DECREASE FABR...
- Publication number 20220246567
- Publication date Aug 4, 2022
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Tzu-Yu Lin
- H01 - BASIC ELECTRIC ELEMENTS

Chia-Wen Zhong

Person

Patents Grantslast 30 patents

Cleaning chamber for metal oxide removal

Method for forming an upper conductive structure having multilayer...

Bottom-electrode interface structure for memory

Patents Applicationslast 30 patents

UPPER CONDUCTIVE STRUCTURE HAVING MULTILAYER STACK TO DECREASE FABR...

CLEANING CHAMBER FOR METAL OXIDE REMOVAL

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

UPPER CONDUCTIVE STRUCTURE HAVING MULTILAYER STACK TO DECREASE FABR...

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF FORMING THE...

BOTTOM-ELECTRODE INTERFACE STRUCTURE FOR MEMORY

FILM SCHEME TO REDUCE PLASMA-INDUCED DAMAGE

DIFFUSION BARRIER TO MITIGATE DIRECT-SHORTAGE LEAKAGE IN CONDUCTIVE...

CLEANING CHAMBER FOR METAL OXIDE REMOVAL

BOTTOM-ELECTRODE INTERFACE STRUCTURE FOR MEMORY

UPPER CONDUCTIVE STRUCTURE HAVING MULTILAYER STACK TO DECREASE FABR...