Christian Lavoie

Person

Ossingin, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Amorphous superconducting alloys for superconducting circuits
- Patent number 12,102,016
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Christian Lavoie
Information Patent Grant
Increasing grain size of polycrystalline superconducting materials...
- Patent number 12,099,899
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Christian Lavoie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Liner-free resistance contacts and silicide with silicide stop layer
- Patent number 12,040,373
- Issue date Jul 16, 2024
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Grain size control of superconducting materials in thin films for J...
- Patent number 11,552,237
- Issue date Jan 10, 2023
- International Business Machines Corporation
- Benjamin Wymore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Superconducting structure and device surface termination with alloy
- Patent number 11,495,724
- Issue date Nov 8, 2022
- International Business Machines Corporation
- Benjamin Wymore
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Methods and structure to probe the metal-metal interface for superc...
- Patent number 11,480,537
- Issue date Oct 25, 2022
- International Business Machines Corporation
- Christian Lavoie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Low resistance source-drain contacts using high temperature silicides
- Patent number 11,088,033
- Issue date Aug 10, 2021
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source-drain contacts using high temperature silicides
- Patent number 11,062,956
- Issue date Jul 13, 2021
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect with self-forming wrap-all-around barrier layer
- Patent number 10,978,342
- Issue date Apr 13, 2021
- International Business Machines Corporation
- Huai Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally stable salicide formation for salicide first contacts
- Patent number 10,943,988
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques to improve reliability in Cu interconnects using Cu inte...
- Patent number 10,943,863
- Issue date Mar 9, 2021
- International Business Machines Corporation
- Chao-Kun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming thermally stable salicide for salicide first contacts
- Patent number 10,937,889
- Issue date Mar 2, 2021
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metallic synapses for neuromorphic and evolvable hardware
- Patent number 10,840,174
- Issue date Nov 17, 2020
- Samsung Electronics Co., Ltd.
- Shawn P. Fetterolf
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Low resistance source-drain contacts using high temperature silicides
- Patent number 10,825,740
- Issue date Nov 3, 2020
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques to improve reliability in Cu interconnects using Cu inte...
- Patent number 10,818,590
- Issue date Oct 27, 2020
- International Business Machines Corporation
- Chao-Kun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-N junction based devices with single species impurity for P-type...
- Patent number 10,777,645
- Issue date Sep 15, 2020
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts to semiconductor substrate and methods of forming same
- Patent number 10,707,167
- Issue date Jul 7, 2020
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elbow contact for field-effect transistor and manufacture thereof
- Patent number 10,707,148
- Issue date Jul 7, 2020
- International Business Machines Corporation
- Guy Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low resistance source-drain contacts using high temperature silicides
- Patent number 10,685,888
- Issue date Jun 16, 2020
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-N junction based devices with single species impurity for P-type...
- Patent number 10,615,261
- Issue date Apr 7, 2020
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming thermally stable salicide for salicide first contacts
- Patent number 10,546,941
- Issue date Jan 28, 2020
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Elbow contact for field-effect transistor and manufacture thereof
- Patent number 10,541,191
- Issue date Jan 21, 2020
- International Business Machines Corporation
- Guy Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques to improve reliability in Cu interconnects using Cu inte...
- Patent number 10,461,026
- Issue date Oct 29, 2019
- International Business Machines Corporation
- Chao-Kun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thermally stable salicide formation for salicide first contacts
- Patent number 10,453,935
- Issue date Oct 22, 2019
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
P-N junction based devices with single species impurity for P-type...
- Patent number 10,411,101
- Issue date Sep 10, 2019
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solar cell with interdigitated back contacts formed from high and l...
- Patent number 10,396,229
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Joel P. De Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maskless method to reduce source-drain contact resistance in CMOS d...
- Patent number 10,304,938
- Issue date May 28, 2019
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to reduce variability in contact resistance
- Patent number 10,147,680
- Issue date Dec 4, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reducing autodoping of III-V semiconductors by atomic layer epitaxy...
- Patent number 10,062,567
- Issue date Aug 28, 2018
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contacts to semiconductor substrate and methods of forming same
- Patent number 9,865,546
- Issue date Jan 9, 2018
- GLOBALFOUNDRIES Inc.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTI-LAYER TOPOLOGICAL INTERCONNECT WITH PROXIMAL DOPING LAYER
- Publication number 20240113024
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Ching-Tzu Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE CONTACT THAT REDUCES RISK OF CONTACT TO GATE SHORT
- Publication number 20240079446
- Publication date Mar 7, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FRONT END OF LINE PROCESSING COMPATIBLE THERMALLY STABLE BURIED POW...
- Publication number 20240006316
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Sagarika Mukesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LINER-FREE RESISTANCE CONTACTS AND SILICIDE WITH SILICIDE STOP LAYER
- Publication number 20230187521
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Nicolas Loubet
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAIN SIZE CONTROL OF SUPERCONDUCTING MATERIALS IN THIN FILMS FOR J...
- Publication number 20220059748
- Publication date Feb 24, 2022
- International Business Machines Corporation
- Benjamin Wymore
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURE TO PROBE THE METAL-METAL INTERFACE FOR SUPERC...
- Publication number 20220034833
- Publication date Feb 3, 2022
- International Business Machines Corporation
- Christian Lavoie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
INCREASING GRAIN SIZE OF POLYCRYSTALLINE SUPERCONDUCTING MATERIALS...
- Publication number 20220036228
- Publication date Feb 3, 2022
- International Business Machines Corporation
- Christian Lavoie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Superconducting Structure and Device Surface Termination with Alloy
- Publication number 20220029083
- Publication date Jan 27, 2022
- International Business Machines Corporation
- Benjamin Wymore
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
AMORPHOUS SUPERCONDUCTING ALLOYS FOR SUPERCONDUCTING CIRCUITS
- Publication number 20220005999
- Publication date Jan 6, 2022
- Christian Lavoie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Interconnect with Self-Forming Wrap-All-Around Barrier Layer
- Publication number 20200243383
- Publication date Jul 30, 2020
- International Business Machines Corporation
- Huai Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE...
- Publication number 20200161436
- Publication date May 21, 2020
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING THERMALLY STABLE SALICIDE FOR SALICIDE FIRST CONTACTS
- Publication number 20200058758
- Publication date Feb 20, 2020
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE...
- Publication number 20200035793
- Publication date Jan 30, 2020
- International Business Machines Corporation
- Guy M. Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELBOW CONTACT FOR FIELD-EFFECT TRANSISTOR AND MANUFACTURE THEREOF
- Publication number 20200027820
- Publication date Jan 23, 2020
- International Business Machines Corporation
- Guy Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques to Improve Reliability in Cu Interconnects Using Cu Inte...
- Publication number 20200006226
- Publication date Jan 2, 2020
- International Business Machines Corporation
- Chao-Kun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Techniques to Improve Reliability in Cu Interconnects Using Cu Inte...
- Publication number 20200006227
- Publication date Jan 2, 2020
- International Business Machines Corporation
- Chao-Kun Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY STABLE SALICIDE FORMATION FOR SALICIDE FIRST CONTACTS
- Publication number 20190348519
- Publication date Nov 14, 2019
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLAR CELL WITH BORDERLESS INTERDIGITATED CONTACTS AND METHOD OF MA...
- Publication number 20190288146
- Publication date Sep 19, 2019
- International Business Machines Corporation
- Joel P. De Souza
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELBOW CONTACT FOR FIELD-EFFECT TRANSISTOR AND MANUFACTURE THEREOF
- Publication number 20190157187
- Publication date May 23, 2019
- International Business Machines Corporation
- Guy Cohen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reducing Autodoping of III-V Semiconductors By Atomic Layer Epitaxy...
- Publication number 20180342392
- Publication date Nov 29, 2018
- International Business Machines Corporation
- Guy M. Cohen
- C30 - CRYSTAL GROWTH
Information Patent Application
THERMALLY STABLE SALICIDE FORMATION FOR SALICIDE FIRST CONTACTS
- Publication number 20180308951
- Publication date Oct 25, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THERMALLY STABLE SALICIDE FORMATION FOR SALICIDE FIRST CONTACTS
- Publication number 20180308952
- Publication date Oct 25, 2018
- International Business Machines Corporation
- Praneet Adusumilli
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METALLIC SYNAPSES FOR NEUROMORPHIC AND EVOLVABLE HARDWARE
- Publication number 20180300599
- Publication date Oct 18, 2018
- International Business Machines Corporation
- SHAWN P. FETTEROLF
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
METHOD TO REDUCE VARIABILITY IN CONTACT RESISTANCE
- Publication number 20180226352
- Publication date Aug 9, 2018
- International Business Machines Corporation
- Praneet ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES
- Publication number 20180138093
- Publication date May 17, 2018
- International Business Machines Corporation
- Praneet ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES
- Publication number 20180122646
- Publication date May 3, 2018
- International Business Machines Corporation
- Praneet ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACTS TO SEMICONDUCTOR SUBSTRATE AND METHODS OF FORMING SAME
- Publication number 20180090447
- Publication date Mar 29, 2018
- GLOBALFOUNDRIES INC.
- Emre Alptekin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MASKLESS METHOD TO REDUCE SOURCE-DRAIN CONTACT RESISTANCE IN CMOS D...
- Publication number 20180083114
- Publication date Mar 22, 2018
- International Business Machines Corporation
- Praneet ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES
- Publication number 20180068903
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Praneet ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES
- Publication number 20180068904
- Publication date Mar 8, 2018
- International Business Machines Corporation
- Praneet ADUSUMILLI
- H01 - BASIC ELECTRIC ELEMENTS

Christian Lavoie

Person

Patents Grantslast 30 patents

Amorphous superconducting alloys for superconducting circuits

Increasing grain size of polycrystalline superconducting materials...

Liner-free resistance contacts and silicide with silicide stop layer

Grain size control of superconducting materials in thin films for J...

Superconducting structure and device surface termination with alloy

Methods and structure to probe the metal-metal interface for superc...

Low resistance source-drain contacts using high temperature silicides

Low resistance source-drain contacts using high temperature silicides

Interconnect with self-forming wrap-all-around barrier layer

Thermally stable salicide formation for salicide first contacts

Techniques to improve reliability in Cu interconnects using Cu inte...

Forming thermally stable salicide for salicide first contacts

Metallic synapses for neuromorphic and evolvable hardware

Low resistance source-drain contacts using high temperature silicides

Techniques to improve reliability in Cu interconnects using Cu inte...

P-N junction based devices with single species impurity for P-type...

Contacts to semiconductor substrate and methods of forming same

Elbow contact for field-effect transistor and manufacture thereof

Low resistance source-drain contacts using high temperature silicides

P-N junction based devices with single species impurity for P-type...

Forming thermally stable salicide for salicide first contacts

Elbow contact for field-effect transistor and manufacture thereof

Techniques to improve reliability in Cu interconnects using Cu inte...

Thermally stable salicide formation for salicide first contacts

P-N junction based devices with single species impurity for P-type...

Solar cell with interdigitated back contacts formed from high and l...

Maskless method to reduce source-drain contact resistance in CMOS d...

Method to reduce variability in contact resistance

Reducing autodoping of III-V semiconductors by atomic layer epitaxy...

Contacts to semiconductor substrate and methods of forming same

Patents Applicationslast 30 patents

MULTI-LAYER TOPOLOGICAL INTERCONNECT WITH PROXIMAL DOPING LAYER

BACKSIDE CONTACT THAT REDUCES RISK OF CONTACT TO GATE SHORT

FRONT END OF LINE PROCESSING COMPATIBLE THERMALLY STABLE BURIED POW...

LINER-FREE RESISTANCE CONTACTS AND SILICIDE WITH SILICIDE STOP LAYER

GRAIN SIZE CONTROL OF SUPERCONDUCTING MATERIALS IN THIN FILMS FOR J...

METHODS AND STRUCTURE TO PROBE THE METAL-METAL INTERFACE FOR SUPERC...

INCREASING GRAIN SIZE OF POLYCRYSTALLINE SUPERCONDUCTING MATERIALS...

Superconducting Structure and Device Surface Termination with Alloy

AMORPHOUS SUPERCONDUCTING ALLOYS FOR SUPERCONDUCTING CIRCUITS

Interconnect with Self-Forming Wrap-All-Around Barrier Layer

P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE...

FORMING THERMALLY STABLE SALICIDE FOR SALICIDE FIRST CONTACTS

P-N JUNCTION BASED DEVICES WITH SINGLE SPECIES IMPURITY FOR P-TYPE...

ELBOW CONTACT FOR FIELD-EFFECT TRANSISTOR AND MANUFACTURE THEREOF

Techniques to Improve Reliability in Cu Interconnects Using Cu Inte...

Techniques to Improve Reliability in Cu Interconnects Using Cu Inte...

THERMALLY STABLE SALICIDE FORMATION FOR SALICIDE FIRST CONTACTS

SOLAR CELL WITH BORDERLESS INTERDIGITATED CONTACTS AND METHOD OF MA...

ELBOW CONTACT FOR FIELD-EFFECT TRANSISTOR AND MANUFACTURE THEREOF

Reducing Autodoping of III-V Semiconductors By Atomic Layer Epitaxy...

THERMALLY STABLE SALICIDE FORMATION FOR SALICIDE FIRST CONTACTS

THERMALLY STABLE SALICIDE FORMATION FOR SALICIDE FIRST CONTACTS

METALLIC SYNAPSES FOR NEUROMORPHIC AND EVOLVABLE HARDWARE

METHOD TO REDUCE VARIABILITY IN CONTACT RESISTANCE

LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

CONTACTS TO SEMICONDUCTOR SUBSTRATE AND METHODS OF FORMING SAME

MASKLESS METHOD TO REDUCE SOURCE-DRAIN CONTACT RESISTANCE IN CMOS D...

LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES

LOW RESISTANCE SOURCE-DRAIN CONTACTS USING HIGH TEMPERATURE SILICIDES