Dina H. Triyoso

Person

Houston, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reverse ALD
- Patent number 8,404,594
- Issue date Mar 26, 2013
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a through silicon via (TSV)
- Patent number 8,039,386
- Issue date Oct 18, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Thuy B. Dao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma treatment of a semiconductor surface for enhanced nucleation...
- Patent number 8,030,220
- Issue date Oct 4, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with selectively modulated gate work function
- Patent number 7,911,002
- Issue date Mar 22, 2011
- FREESCALE SEMICONDUCTOR, INC.
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of removing defects from a dielectric material in a semicond...
- Patent number 7,776,731
- Issue date Aug 17, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Kurt H. Junker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In-situ nitridation of high-k dielectrics
- Patent number 7,704,821
- Issue date Apr 27, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to selectively modulate gate work function through selective...
- Patent number 7,659,156
- Issue date Feb 9, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma treatment of a semiconductor surface for enhanced nucleation...
- Patent number 7,618,902
- Issue date Nov 17, 2009
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ALD gate electrode
- Patent number 7,303,983
- Issue date Dec 4, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate dielectric and metal gate integration
- Patent number 7,297,586
- Issue date Nov 20, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor transistor having structural elements of differing ma...
- Patent number 7,230,264
- Issue date Jun 12, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for treating a semiconductor surface to form a metal-contain...
- Patent number 7,132,360
- Issue date Nov 7, 2006
- FREESCALE SEMICONDUCTOR, INC.
- James K. Schaeffer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Electronic device including dielectric layer, and a process for for...
- Patent number 7,091,568
- Issue date Aug 15, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Rama I. Hegde
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of forming a semiconductor device having a dielectric layer...
- Patent number 7,071,038
- Issue date Jul 4, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a layer using a purging gas in a semiconductor p...
- Patent number 7,015,153
- Issue date Mar 21, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method to reduce impurity elements during semiconductor film deposi...
- Patent number 6,987,063
- Issue date Jan 17, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Olubunmi O. Adetutu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Semiconductor transistor having structural elements of differing ma...
- Patent number 6,979,622
- Issue date Dec 27, 2005
- FREESCALE SEMICONDUCTOR, INC.
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making an integrated circuit using an EUV mask formed by...
- Patent number 6,835,671
- Issue date Dec 28, 2004
- FREESCALE SEMICONDUCTOR, INC.
- Scott Daniel Hector
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING A THROUGH SILICON VIA (TSV)
- Publication number 20110237073
- Publication date Sep 29, 2011
- Thuy B. Dao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH SELECTIVELY MODULATED GATE WORK FUNCTION
- Publication number 20100230756
- Publication date Sep 16, 2010
- Freescale Semiconductor Inc.
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA TREATMENT OF A SEMICONDUCTOR SURFACE FOR ENHANCED NUCLEATION...
- Publication number 20100035434
- Publication date Feb 11, 2010
- FREESCALE SEMICONDUCTOR, INC.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF REMOVING DEFECTS FROM A DIELECTRIC MATERIAL IN A SEMICOND...
- Publication number 20090075434
- Publication date Mar 19, 2009
- Kurt H. Junker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method to selectively modulate gate work function through selective...
- Publication number 20080258219
- Publication date Oct 23, 2008
- Freescale Semiconductor, Inc.
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ALD gate electrode
- Publication number 20070166970
- Publication date Jul 19, 2007
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma treatment of a semiconductor surface for enhanced nucleation...
- Publication number 20070123056
- Publication date May 31, 2007
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-situ nitridation of high-k dielectrics
- Publication number 20060273411
- Publication date Dec 7, 2006
- Freescale Semiconductor, Inc.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reverse ALD
- Publication number 20060270239
- Publication date Nov 30, 2006
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Novel gate dielectric and metal gate integration
- Publication number 20060166425
- Publication date Jul 27, 2006
- Freescale Semiconductor Inc.
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICE INCLUDING DIELECTRIC LAYER, AND A PROCESS FOR FOR...
- Publication number 20060131671
- Publication date Jun 22, 2006
- Freescale Semiconductor, Inc.
- Rama I. Hegde
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor transistor having structural elements of differing ma...
- Publication number 20060076579
- Publication date Apr 13, 2006
- Voon-Yew Thean
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming a semiconductor device having a dielectric layer...
- Publication number 20060063336
- Publication date Mar 23, 2006
- Dina H. Triyoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO REDUCE IMPURITY ELEMENTS DURING SEMICONDUCTOR FILM DEPOSI...
- Publication number 20050277296
- Publication date Dec 15, 2005
- Olubunmi O. Adetutu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method for treating a semiconductor surface to form a metal-contain...
- Publication number 20050277294
- Publication date Dec 15, 2005
- James K. Schaeffer
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Method of making an integrated circuit using an EUV mask formed by...
- Publication number 20040033699
- Publication date Feb 19, 2004
- Scott Daniel Hector
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Dina H. Triyoso

Person

Patents Grantslast 30 patents

Reverse ALD

Method for forming a through silicon via (TSV)

Plasma treatment of a semiconductor surface for enhanced nucleation...

Semiconductor device with selectively modulated gate work function

Method of removing defects from a dielectric material in a semicond...

In-situ nitridation of high-k dielectrics

Method to selectively modulate gate work function through selective...

Plasma treatment of a semiconductor surface for enhanced nucleation...

ALD gate electrode

Gate dielectric and metal gate integration

Semiconductor transistor having structural elements of differing ma...

Method for treating a semiconductor surface to form a metal-contain...

Electronic device including dielectric layer, and a process for for...

Method of forming a semiconductor device having a dielectric layer...

Method for forming a layer using a purging gas in a semiconductor p...

Method to reduce impurity elements during semiconductor film deposi...

Semiconductor transistor having structural elements of differing ma...

Method of making an integrated circuit using an EUV mask formed by...

Patents Applicationslast 30 patents

METHOD FOR FORMING A THROUGH SILICON VIA (TSV)

SEMICONDUCTOR DEVICE WITH SELECTIVELY MODULATED GATE WORK FUNCTION

PLASMA TREATMENT OF A SEMICONDUCTOR SURFACE FOR ENHANCED NUCLEATION...

METHOD OF REMOVING DEFECTS FROM A DIELECTRIC MATERIAL IN A SEMICOND...

Method to selectively modulate gate work function through selective...

ALD gate electrode

Plasma treatment of a semiconductor surface for enhanced nucleation...

In-situ nitridation of high-k dielectrics

Reverse ALD

Novel gate dielectric and metal gate integration

ELECTRONIC DEVICE INCLUDING DIELECTRIC LAYER, AND A PROCESS FOR FOR...

Semiconductor transistor having structural elements of differing ma...

Method of forming a semiconductor device having a dielectric layer...

METHOD TO REDUCE IMPURITY ELEMENTS DURING SEMICONDUCTOR FILM DEPOSI...

Method for treating a semiconductor surface to form a metal-contain...

Method of making an integrated circuit using an EUV mask formed by...