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Patents Grants
last 30 patents
Information
Patent Grant
Ultra-thin gate oxide through post decoupled plasma nitridation anneal
Patent number
7,176,094
Issue date
Feb 13, 2007
Chartered Semiconductor Manufacturing Ltd.
Dong Zhong
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method to reduce variation in LDD series resistance
Patent number
6,534,388
Issue date
Mar 18, 2003
Chartered Semiconductor Manufacturing Ltd.
Wenhe Lin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming dual thickness gate dielectric structures via use...
Patent number
6,524,910
Issue date
Feb 25, 2003
Chartered Semiconductor Manufacturing Ltd.
Wenhe Lin
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming MOS/CMOS devices with dual or triple gate oxide
Patent number
6,268,251
Issue date
Jul 31, 2001
Chartered Semiconductor Manufacturing Inc.
Dong Zhong
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of forming low pressure silicon oxynitride dielectrics havin...
Patent number
6,261,976
Issue date
Jul 17, 2001
Chartered Semiconductor Manufacturing Ltd.
Zhong Dong
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a gate structure for a semiconductor memory...
Patent number
6,187,633
Issue date
Feb 13, 2001
Chartered Semiconductor Manufacturing, Ltd.
Zhong Dong
H01 - BASIC ELECTRIC ELEMENTS
Patents Applications
last 30 patents
Information
Patent Application
Ultra-thin gate oxide through post decoupled plasma nitridation anneal
Publication number
20030170956
Publication date
Sep 11, 2003
Chartered Semiconductor Manufacturing Ltd.
Dong Zhong
H01 - BASIC ELECTRIC ELEMENTS