Enrique Vecino Vazquez

Person

Munich, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with drain structure and metal drain electrode
- Patent number 11,652,137
- Issue date May 16, 2023
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with drain structure and metal drain electrode
- Patent number 10,784,339
- Issue date Sep 22, 2020
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a gate contact structure
- Patent number 10,483,383
- Issue date Nov 19, 2019
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for forming a semiconductor device
- Patent number 10,354,992
- Issue date Jul 16, 2019
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor device with increased gate-drain capacitance
- Patent number 10,128,367
- Issue date Nov 13, 2018
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with drift zone and backside emitter and metho...
- Patent number 10,084,038
- Issue date Sep 25, 2018
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method for a switching transistor
- Patent number 9,929,727
- Issue date Mar 27, 2018
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Semiconductor device having switchable regions with different trans...
- Patent number 9,679,895
- Issue date Jun 13, 2017
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor switching device with diff...
- Patent number 9,583,395
- Issue date Feb 28, 2017
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching device with different local threshold voltage
- Patent number 9,349,795
- Issue date May 24, 2016
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching devices with different local transconductance
- Patent number 9,293,533
- Issue date Mar 22, 2016
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching device with different local cell geometry
- Patent number 9,231,049
- Issue date Jan 5, 2016
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Gate Contact Structure for a Semiconductor Device
- Publication number 20200044064
- Publication date Feb 6, 2020
- Infineon Technologies Dresden GmbH & Co. KG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Drain Structure and Metal Drain Electrode
- Publication number 20190035885
- Publication date Jan 31, 2019
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Including a Gate Contact Structure
- Publication number 20180269296
- Publication date Sep 20, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Devices and Methods for Forming a Semiconductor Device
- Publication number 20180090479
- Publication date Mar 29, 2018
- INFINEON TECHNOLOGIES DRESDEN GMBH
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Drift Zone and Backside Emitter and Metho...
- Publication number 20180040689
- Publication date Feb 8, 2018
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Transistor Device with Increased Gate-Drain Capacitance
- Publication number 20170154992
- Publication date Jun 1, 2017
- Infineon Technologies Austria AG
- Armin Willmeroth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and Method for a Switching Transistor
- Publication number 20170019096
- Publication date Jan 19, 2017
- Infineon Technologies Austria AG
- Enrique Vecino Vazquez
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
Semiconductor Device Having Switchable Regions with Different Trans...
- Publication number 20160190125
- Publication date Jun 30, 2016
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Manufacturing a Semiconductor Switching Device with Diff...
- Publication number 20160099180
- Publication date Apr 7, 2016
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Switching Device with Different Local Threshold Voltage
- Publication number 20150372086
- Publication date Dec 24, 2015
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Switching Device with Different Local Cell Geometry
- Publication number 20150372076
- Publication date Dec 24, 2015
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Switching Devices with Different Local Transconductance
- Publication number 20150372087
- Publication date Dec 24, 2015
- Infineon Technologies Austria AG
- Christian Fachmann
- H01 - BASIC ELECTRIC ELEMENTS

Enrique Vecino Vazquez

Person

Patents Grantslast 30 patents

Semiconductor device with drain structure and metal drain electrode

Semiconductor device with drain structure and metal drain electrode

Semiconductor device including a gate contact structure

Semiconductor devices and methods for forming a semiconductor device

Transistor device with increased gate-drain capacitance

Semiconductor device with drift zone and backside emitter and metho...

System and method for a switching transistor

Semiconductor device having switchable regions with different trans...

Method for manufacturing a semiconductor switching device with diff...

Semiconductor switching device with different local threshold voltage

Semiconductor switching devices with different local transconductance

Semiconductor switching device with different local cell geometry

Patents Applicationslast 30 patents

Gate Contact Structure for a Semiconductor Device

Semiconductor Device with Drain Structure and Metal Drain Electrode

Semiconductor Device Including a Gate Contact Structure

Semiconductor Devices and Methods for Forming a Semiconductor Device

Semiconductor Device with Drift Zone and Backside Emitter and Metho...

Transistor Device with Increased Gate-Drain Capacitance

System and Method for a Switching Transistor

Semiconductor Device Having Switchable Regions with Different Trans...

Method for Manufacturing a Semiconductor Switching Device with Diff...

Semiconductor Switching Device with Different Local Threshold Voltage

Semiconductor Switching Device with Different Local Cell Geometry

Semiconductor Switching Devices with Different Local Transconductance