Farrokh Kia Omid-zohoor

Person

San Jose, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Multi-time programmable non-volatile memory cell
- Patent number 11,295,825
- Issue date Apr 5, 2022
- LATTICE SEMICONDUCTOR CORPORATION
- Farrokh Kia Omid-Zohoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-time programmable non-volatile memory cell
- Patent number 10,217,521
- Issue date Feb 26, 2019
- LATTICE SEMICONDUCTOR CORPORATION
- Farrokh Kia Omid-Zohoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-voltage protection device and process
- Patent number 7,307,319
- Issue date Dec 11, 2007
- Lattice Semiconductor Corporation
- Nui Chong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrostatic discharge simulation
- Patent number 7,024,646
- Issue date Apr 4, 2006
- Lattice Semiconductor Corporation
- Stewart Logie
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Semiconductor device having metallized interconnect structure and m...
- Patent number 6,703,305
- Issue date Mar 9, 2004
- Lattice Semiconductor Corporation
- Nguyen Duc Bui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation of field effect transistors
- Patent number 6,274,419
- Issue date Aug 14, 2001
- Advanced Micro Devices, Inc.
- Farrokh Kia Omid-Zohoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making trench isolation structures with oxidized silicon...
- Patent number 6,184,108
- Issue date Feb 6, 2001
- Advanced Micro Devices, Inc.
- Farrokh Omid-Zohoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation with suppressed parasitic edge transistors
- Patent number 6,097,072
- Issue date Aug 1, 2000
- Advanced Micro Devices
- Farrokh Omid-Zohoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation structures with oxidized silicon regions and metho...
- Patent number 6,064,104
- Issue date May 16, 2000
- Advanced Micro Devices, Inc.
- Farrokh Omid-Zohoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided shallow junction formation and structure with high and lo...
- Patent number 6,011,272
- Issue date Jan 4, 2000
- Advanced Micro Devices, Inc.
- Farrokh Omid-Zohoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicided shallow junction transistor formation and structure with...
- Patent number 5,973,372
- Issue date Oct 26, 1999
- Farrokh Omid-Zohoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow width trenches for field isolation in integrated circuits
- Patent number 5,877,066
- Issue date Mar 2, 1999
- Advanced Micro Devices, Inc.
- Andre Stolmeijer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation with rounded top and bottom corners and edges
- Patent number 5,861,104
- Issue date Jan 19, 1999
- Advanced Micro Devices
- Farrokh Omid-Zohoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of doping trench sidewalls before trench etching
- Patent number 5,780,353
- Issue date Jul 14, 1998
- Advanced Micro Devices, Inc.
- Farrokh Omid-Zohoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation of field effect transistors
- Patent number 5,777,370
- Issue date Jul 7, 1998
- Advanced Micro Devices, Inc.
- Farrokh Kia Omid-Zohoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Narrow width trenches for field isolation in integrated circuits
- Patent number 5,742,090
- Issue date Apr 21, 1998
- Advanced Micro Devices, Inc.
- Andre Stolmeijer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Optimizing doping control in short channel MOS
- Patent number 5,215,937
- Issue date Jun 1, 1993
- Advanced Micro Devices, Inc.
- Darrell M. Erb
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MULTI-TIME PROGRAMMABLE NON-VOLATILE MEMORY CELL
- Publication number 20190189231
- Publication date Jun 20, 2019
- Lattice Semiconductor Corporation
- Farrokh Kia Omid-Zohoor
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-TIME PROGRAMMABLE NON-VOLATILE MEMORY CELL
- Publication number 20180019018
- Publication date Jan 18, 2018
- Lattice Semiconductor Corporation
- Farrokh Kia Omid-Zohoor
- G11 - INFORMATION STORAGE
Information Patent Application
Metal junction diode and process
- Publication number 20060157748
- Publication date Jul 20, 2006
- Nui Chong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrostatic discharge simulation
- Publication number 20050172246
- Publication date Aug 4, 2005
- Stewart Logie
- G06 - COMPUTING CALCULATING COUNTING

Farrokh Kia Omid-zohoor

Person

Patents Grantslast 30 patents

Multi-time programmable non-volatile memory cell

Multi-time programmable non-volatile memory cell

High-voltage protection device and process

Electrostatic discharge simulation

Semiconductor device having metallized interconnect structure and m...

Trench isolation of field effect transistors

Method of making trench isolation structures with oxidized silicon...

Trench isolation with suppressed parasitic edge transistors

Trench isolation structures with oxidized silicon regions and metho...

Silicided shallow junction formation and structure with high and lo...

Silicided shallow junction transistor formation and structure with...

Narrow width trenches for field isolation in integrated circuits

Trench isolation with rounded top and bottom corners and edges

Method of doping trench sidewalls before trench etching

Trench isolation of field effect transistors

Narrow width trenches for field isolation in integrated circuits

Optimizing doping control in short channel MOS

Patents Applicationslast 30 patents

MULTI-TIME PROGRAMMABLE NON-VOLATILE MEMORY CELL

MULTI-TIME PROGRAMMABLE NON-VOLATILE MEMORY CELL

Metal junction diode and process

Electrostatic discharge simulation