Heinz Hoenigschmid

Person

Essex, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method for reading out or in a status from or to a ferroelectrical...
- Patent number 6,944,044
- Issue date Sep 13, 2005
- Infineon Technologies AG
- Holger Goebel
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction memory cell architecture
- Patent number 6,944,049
- Issue date Sep 13, 2005
- Infineon Technologies AG
- Heinz Hoenigschmid
- G11 - INFORMATION STORAGE
Information Patent Grant
Using FeRam/MRAM cells having a high degree of flexibility and comp...
- Patent number 6,898,106
- Issue date May 24, 2005
- Infineon Technologies AG
- Heinz Hoenigschmid
- G11 - INFORMATION STORAGE
Information Patent Grant
Fuse concept and method of operation
- Patent number 6,801,471
- Issue date Oct 5, 2004
- Infineon Technologies AG
- Hans Viehmann
- G11 - INFORMATION STORAGE
Information Patent Grant
Integrated magnetoresistive semiconductor memory configuration
- Patent number 6,775,182
- Issue date Aug 10, 2004
- Infineon Technologies AG
- Thomas Boehm
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive memory (MRAM)
- Patent number 6,744,662
- Issue date Jun 1, 2004
- Infineon Technologies AG
- Martin Freitag
- G11 - INFORMATION STORAGE
Information Patent Grant
Error detection and correction method and apparatus in a magnetores...
- Patent number 6,704,230
- Issue date Mar 9, 2004
- International Business Machines Corporation
- John K. DeBrosse
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory device
- Patent number 6,624,461
- Issue date Sep 23, 2003
- Infineon Technologies Aktiengesellschaft
- Heinz Hoenigschmid
- G11 - INFORMATION STORAGE
Information Patent Grant
Narrow contact design for magnetic random access memory (MRAM) arrays
- Patent number 6,567,300
- Issue date May 20, 2003
- Infineon Technologies, AG
- Wolfgang Raberg
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-orthogonal MRAM device
- Patent number 6,522,579
- Issue date Feb 18, 2003
- Infineon Technologies, AG
- Heinz Hoenigschmid
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for fabricating a ferroelectric memory configuration
- Patent number 6,500,677
- Issue date Dec 31, 2002
- Infineon Technologies AG
- Renate Bergmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Serial MRAM device
- Patent number 6,490,194
- Issue date Dec 3, 2002
- Infineon Technologies AG
- Heinz Hoenigschmid
- G11 - INFORMATION STORAGE
Information Patent Grant
Reference for MRAM cell
- Patent number 6,426,907
- Issue date Jul 30, 2002
- Infineon Technologies North America Corp.
- Heinz Hoenigschmid
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic random access memory arrays and methods therefor
- Patent number 5,821,592
- Issue date Oct 13, 1998
- Siemens Aktiengesellschaft
- Heinz Hoenigschmid
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Magnetic tunnel junction memory cell architecture
- Publication number 20040085810
- Publication date May 6, 2004
- Heinz Hoenigschmid
- G11 - INFORMATION STORAGE
Information Patent Application
Method for reading out or in a status from or to a ferroelectrical...
- Publication number 20040076057
- Publication date Apr 22, 2004
- Holger Goebel
- G11 - INFORMATION STORAGE
Information Patent Application
Memory device and method of operating the memory device
- Publication number 20040022117
- Publication date Feb 5, 2004
- Heinz Hoenigschmid
- G11 - INFORMATION STORAGE
Information Patent Application
Integrated magnetoresistive semiconductor memory configuration
- Publication number 20040013022
- Publication date Jan 22, 2004
- Thomas Boehm
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive memory (MRAM)
- Publication number 20030206461
- Publication date Nov 6, 2003
- Martin Freitag
- G11 - INFORMATION STORAGE
Information Patent Application
Fuse concept and method of operation
- Publication number 20030156469
- Publication date Aug 21, 2003
- Infineon Technologies North America Corp.
- Hans Viehmann
- G11 - INFORMATION STORAGE
Information Patent Application
Method for fabricating a ferroelectric memory configuration
- Publication number 20020110935
- Publication date Aug 15, 2002
- Renate Bergmann
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Serial MRAM device
- Publication number 20020097598
- Publication date Jul 25, 2002
- Heinz Hoenigschmid
- B82 - NANO-TECHNOLOGY
Information Patent Application
Non-orthogonal MRAM device
- Publication number 20020097601
- Publication date Jul 25, 2002
- Heinz Hoenigschmid
- B82 - NANO-TECHNOLOGY

Heinz Hoenigschmid

Person

Patents Grantslast 30 patents

Method for reading out or in a status from or to a ferroelectrical...

Magnetic tunnel junction memory cell architecture

Using FeRam/MRAM cells having a high degree of flexibility and comp...

Fuse concept and method of operation

Integrated magnetoresistive semiconductor memory configuration

Magnetoresistive memory (MRAM)

Error detection and correction method and apparatus in a magnetores...

Memory device

Narrow contact design for magnetic random access memory (MRAM) arrays

Non-orthogonal MRAM device

Method for fabricating a ferroelectric memory configuration

Serial MRAM device

Reference for MRAM cell

Dynamic random access memory arrays and methods therefor

Patents Applicationslast 30 patents

Magnetic tunnel junction memory cell architecture

Method for reading out or in a status from or to a ferroelectrical...

Memory device and method of operating the memory device

Integrated magnetoresistive semiconductor memory configuration

Magnetoresistive memory (MRAM)

Fuse concept and method of operation

Method for fabricating a ferroelectric memory configuration

Serial MRAM device

Non-orthogonal MRAM device