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Hiroyo Haga
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Utsunomiya City, JP
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Patents Grants
last 30 patents
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Patent Grant
Nitrogen-doped silicon substantially free of oxidation induced stac...
Patent number
7,404,856
Issue date
Jul 29, 2008
MEMC Electronic Materials, Inc.
Hiroyo Haga
C30 - CRYSTAL GROWTH
Information
Patent Grant
Nitrogen-doped silicon substantially free of oxidation induced stac...
Patent number
7,182,809
Issue date
Feb 27, 2007
MEMC Electronic Materials, Inc.
Hiroyo Haga
C30 - CRYSTAL GROWTH
Information
Patent Grant
Controlled neck growth process for single crystal silicon
Patent number
6,869,477
Issue date
Mar 22, 2005
MEMC Electronic Materials, Inc.
Hiroyo Haga
C30 - CRYSTAL GROWTH
Patents Applications
last 30 patents
Information
Patent Application
NITROGEN-DOPED SILICON SUBSTANTIALLY FREE OF OXIDATION INDUCED STAC...
Publication number
20070169683
Publication date
Jul 26, 2007
MEMC Electronic Materials, Inc.
Hiroyo Haga
C30 - CRYSTAL GROWTH
Information
Patent Application
Nitrogen-doped silicon substantially free of oxidation induced stac...
Publication number
20040009111
Publication date
Jan 15, 2004
Hiroyo Haga
C30 - CRYSTAL GROWTH
Information
Patent Application
Controlled neck growth process for single crystal silicon
Publication number
20030209186
Publication date
Nov 13, 2003
Hiroyo Haga
C30 - CRYSTAL GROWTH