Huiling Shang

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor fin isolation by a well trapping fin portion
- Patent number 10,242,980
- Issue date Mar 26, 2019
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming fins of different semiconductor materials on the same subst...
- Patent number 9,536,900
- Issue date Jan 3, 2017
- GLOBALFOUNDRIES INC.
- Ravikumar Ramachandran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fin isolation by a well trapping fin portion
- Patent number 9,496,258
- Issue date Nov 15, 2016
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained finFET with an electrically isolated channel
- Patent number 9,190,520
- Issue date Nov 17, 2015
- GLOBALFOUNDRIES Inc.
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon-germanium fins and silicon fins on a bulk substrate
- Patent number 9,029,913
- Issue date May 12, 2015
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High threshold voltage NMOS transistors for low power IC technology
- Patent number 8,969,969
- Issue date Mar 3, 2015
- International Business Machines Corporation
- Victor W. C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor fin isolation by a well trapping fin portion
- Patent number 8,933,528
- Issue date Jan 13, 2015
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained finFET with an electrically isolated channel
- Patent number 8,928,086
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High threshold voltage NMOS transistors for low power IC technology
- Patent number 8,927,361
- Issue date Jan 6, 2015
- International Business Machines Corporation
- Roger Allen Booth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a shallow trench isolation embedded polysilicon r...
- Patent number 8,685,818
- Issue date Apr 1, 2014
- International Business Machines Corporation
- Huiling Shang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source-drain extension formation in replacement metal gate transist...
- Patent number 8,592,264
- Issue date Nov 26, 2013
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrate FET integrated on CMOS SOI
- Patent number 8,558,313
- Issue date Oct 15, 2013
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bulk substrate FET integrated on CMOS SOI
- Patent number 8,232,599
- Issue date Jul 31, 2012
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal to form contacts to Ge containing substrates and...
- Patent number 8,154,130
- Issue date Apr 10, 2012
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact scheme for FINFET structures with multiple FINs
- Patent number 8,080,838
- Issue date Dec 20, 2011
- International Business Machines Corporation
- Leland Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of strained Ge into advanced CMOS technology
- Patent number 7,790,538
- Issue date Sep 7, 2010
- International Business Machines Corporation
- Huiling Shang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal to form contacts to Ge containing substrates and...
- Patent number 7,682,968
- Issue date Mar 23, 2010
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure using a non-oxygen chal...
- Patent number 7,521,376
- Issue date Apr 21, 2009
- International Business Machines Corporation
- Martin M. Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned metal to form contacts to Ge containing substrates and...
- Patent number 7,449,782
- Issue date Nov 11, 2008
- International Business Machines Corporation
- Cyril Cabral, Jr.
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of strained Ge into advanced CMOS technology
- Patent number 7,387,925
- Issue date Jun 17, 2008
- International Business Machines Corporation
- Huiling Shang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of strained Ge into advanced CMOS technology
- Patent number 7,244,958
- Issue date Jul 17, 2007
- International Business Machines Corporation
- Huiling Shang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin germanium oxynitride gate dielectric for germanium-based devices
- Patent number 7,078,300
- Issue date Jul 18, 2006
- International Business Machines Corporation
- Evgeni Gousev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for passivating the semiconductor-dielectric interface of a...
- Patent number 6,803,266
- Issue date Oct 12, 2004
- International Business Machines Corporation
- Paul M. Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS device having a passivated semiconductor-dielectric interface
- Patent number 6,603,181
- Issue date Aug 5, 2003
- International Business Machines Corporation
- Paul M. Solomon
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR FIN ISOLATION BY A WELL TRAPPING FIN PORTION
- Publication number 20170040320
- Publication date Feb 9, 2017
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING FINS OF DIFFERENT SEMICONDUCTOR MATERIALS ON THE SAME SUBST...
- Publication number 20150340381
- Publication date Nov 26, 2015
- International Business Machines Corporation
- Ravikumar Ramachandran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN ISOLATION BY A WELL TRAPPING FIN PORTION
- Publication number 20150021625
- Publication date Jan 22, 2015
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FINFET WITH AN ELECTRICALLY ISOLATED CHANNEL
- Publication number 20140377924
- Publication date Dec 25, 2014
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON-GERMANIUM FINS AND SILICON FINS ON A BULK SUBSTRATE
- Publication number 20140252413
- Publication date Sep 11, 2014
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR FIN ISOLATION BY A WELL TRAPPING FIN PORTION
- Publication number 20140252479
- Publication date Sep 11, 2014
- International Business Machines Corporation
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED FINFET WITH AN ELECTRICALLY ISOLATED CHANNEL
- Publication number 20140191297
- Publication date Jul 10, 2014
- Henry K. Utomo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH THRESHOLD VOLTAGE NMOS TRANSISTORS FOR LOW POWER IC TECHNOLOGY
- Publication number 20130196476
- Publication date Aug 1, 2013
- International Business Machines Corporation
- Roger Allen Booth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE-DRAIN EXTENSION FORMATION IN REPLACEMENT METAL GATE TRANSIST...
- Publication number 20130161763
- Publication date Jun 27, 2013
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE-DRAIN EXTENSION FORMATION IN REPLACEMENT METAL GATE TRANSIST...
- Publication number 20130161745
- Publication date Jun 27, 2013
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SUBSTRATE FET INTEGRATED ON CMOS SOI
- Publication number 20120187492
- Publication date Jul 26, 2012
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Shallow Trench Isolation Embedded Polysilicon R...
- Publication number 20110318897
- Publication date Dec 29, 2011
- International Business Machines Corporation
- Huiling Shang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK SUBSTRATE FET INTEGRATED ON CMOS SOI
- Publication number 20110163383
- Publication date Jul 7, 2011
- International Business Machines Corporation
- Anthony I. Chou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High Threshold Voltage NMOS Transistors For Low Power IC Technology
- Publication number 20100237425
- Publication date Sep 23, 2010
- International Business Machines Corporation
- Victor W.C. Chan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT SCHEME FOR FINFET STRUCTURES WITH MULTIPLE FINs
- Publication number 20090212366
- Publication date Aug 27, 2009
- International Business Machines Corporation
- Leland Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of strained Ge into advanced CMOS technology
- Publication number 20080248616
- Publication date Oct 9, 2008
- International Business Machines Corporation
- Huiling Shang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED METAL TO FORM CONTACTS TO Ge CONTAINING SUBSTRATES AND...
- Publication number 20080227283
- Publication date Sep 18, 2008
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED METAL TO FORM CONTACTS TO Ge CONTAINING SUBSTRATES AND...
- Publication number 20080220606
- Publication date Sep 11, 2008
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Contact scheme for FINFET structures with multiple FINs
- Publication number 20070287256
- Publication date Dec 13, 2007
- International Business Machines Corporation
- Leland Chang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of strained Ge into advanced CMOS technology
- Publication number 20070218621
- Publication date Sep 20, 2007
- International Business Machines Corporation
- Huiling Shang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Ge-based semiconductor structure fabricated using a non-oxygen chal...
- Publication number 20070093074
- Publication date Apr 26, 2007
- International Business Machines Corporation
- Martin M. Frank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin germanium oxynitride gate dielectric for germanium-based devices
- Publication number 20060202279
- Publication date Sep 14, 2006
- International Business Machines Corporation
- Evgeni Gousev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of strained Ge into advanced CMOS technology
- Publication number 20050285097
- Publication date Dec 29, 2005
- Huiling Shang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned metal to form contacts to Ge containing substrates and...
- Publication number 20050250301
- Publication date Nov 10, 2005
- International Business Machines Corporation
- Cyril Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanate gate dielectrics for semiconductor devices
- Publication number 20050082624
- Publication date Apr 21, 2005
- Evgeni Gousev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Thin germanium oxynitride gate dielectric for germanium-based devices
- Publication number 20050070122
- Publication date Mar 31, 2005
- Evgeni Gousev
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESS FOR PASSIVATING THE SEMICONDUCTOR-DIELECTRIC INTERFACE OF A...
- Publication number 20030132492
- Publication date Jul 17, 2003
- International Business Machines Corporation
- Paul M. Solomon
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS DEVICE HAVING A PASSIVATED SEMICONDUCTOR-DIELECTRIC INTERFACE
- Publication number 20020094643
- Publication date Jul 18, 2002
- International Business Machines Corporation
- Paul M. Solomon
- H01 - BASIC ELECTRIC ELEMENTS

Huiling Shang

Person

Patents Grantslast 30 patents

Semiconductor fin isolation by a well trapping fin portion

Forming fins of different semiconductor materials on the same subst...

Semiconductor fin isolation by a well trapping fin portion

Strained finFET with an electrically isolated channel

Silicon-germanium fins and silicon fins on a bulk substrate

High threshold voltage NMOS transistors for low power IC technology

Semiconductor fin isolation by a well trapping fin portion

Strained finFET with an electrically isolated channel

High threshold voltage NMOS transistors for low power IC technology

Method of forming a shallow trench isolation embedded polysilicon r...

Source-drain extension formation in replacement metal gate transist...

Bulk substrate FET integrated on CMOS SOI

Bulk substrate FET integrated on CMOS SOI

Self-aligned metal to form contacts to Ge containing substrates and...

Contact scheme for FINFET structures with multiple FINs

Integration of strained Ge into advanced CMOS technology

Self-aligned metal to form contacts to Ge containing substrates and...

Method of forming a semiconductor structure using a non-oxygen chal...

Self-aligned metal to form contacts to Ge containing substrates and...

Integration of strained Ge into advanced CMOS technology

Integration of strained Ge into advanced CMOS technology

Thin germanium oxynitride gate dielectric for germanium-based devices

Process for passivating the semiconductor-dielectric interface of a...

MOS device having a passivated semiconductor-dielectric interface

Patents Applicationslast 30 patents

SEMICONDUCTOR FIN ISOLATION BY A WELL TRAPPING FIN PORTION

FORMING FINS OF DIFFERENT SEMICONDUCTOR MATERIALS ON THE SAME SUBST...

SEMICONDUCTOR FIN ISOLATION BY A WELL TRAPPING FIN PORTION

STRAINED FINFET WITH AN ELECTRICALLY ISOLATED CHANNEL

SILICON-GERMANIUM FINS AND SILICON FINS ON A BULK SUBSTRATE

SEMICONDUCTOR FIN ISOLATION BY A WELL TRAPPING FIN PORTION

STRAINED FINFET WITH AN ELECTRICALLY ISOLATED CHANNEL

HIGH THRESHOLD VOLTAGE NMOS TRANSISTORS FOR LOW POWER IC TECHNOLOGY

SOURCE-DRAIN EXTENSION FORMATION IN REPLACEMENT METAL GATE TRANSIST...

SOURCE-DRAIN EXTENSION FORMATION IN REPLACEMENT METAL GATE TRANSIST...

BULK SUBSTRATE FET INTEGRATED ON CMOS SOI

Method of Forming a Shallow Trench Isolation Embedded Polysilicon R...

BULK SUBSTRATE FET INTEGRATED ON CMOS SOI

High Threshold Voltage NMOS Transistors For Low Power IC Technology

CONTACT SCHEME FOR FINFET STRUCTURES WITH MULTIPLE FINs

Integration of strained Ge into advanced CMOS technology

SELF-ALIGNED METAL TO FORM CONTACTS TO Ge CONTAINING SUBSTRATES AND...

SELF-ALIGNED METAL TO FORM CONTACTS TO Ge CONTAINING SUBSTRATES AND...

Contact scheme for FINFET structures with multiple FINs

Integration of strained Ge into advanced CMOS technology

Ge-based semiconductor structure fabricated using a non-oxygen chal...

Thin germanium oxynitride gate dielectric for germanium-based devices

Integration of strained Ge into advanced CMOS technology

Self-aligned metal to form contacts to Ge containing substrates and...

Germanate gate dielectrics for semiconductor devices

Thin germanium oxynitride gate dielectric for germanium-based devices

PROCESS FOR PASSIVATING THE SEMICONDUCTOR-DIELECTRIC INTERFACE OF A...

MOS DEVICE HAVING A PASSIVATED SEMICONDUCTOR-DIELECTRIC INTERFACE