John Haywood

Person

Santa Clara, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Process for etching a controllable thickness of oxide on an integra...
- Patent number 6,759,337
- Issue date Jul 6, 2004
- LSI Logic Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
PROCESS FOR FORMING THIN GATE OXIDE WITH ENHANCED RELIABILITY BY NI...
- Patent number 6,413,881
- Issue date Jul 2, 2002
- LSI Logic Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite semiconductor gate dielectrics
- Patent number 6,087,229
- Issue date Jul 11, 2000
- LSI Logic Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming variable thickness gate dielectrics
- Patent number 6,033,998
- Issue date Mar 7, 2000
- LSI Logic Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for forming photoresist mask over integrated circuit struct...
- Patent number 5,902,704
- Issue date May 11, 1999
- LSI Logic Corporation
- Philippe Schoenborn
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Process for forming integrated circuit structure with metal silicid...
- Patent number 5,851,890
- Issue date Dec 22, 1998
- LSI Logic Corporation
- Jiunn-Yann Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier for polysilicon gate electrode of MOS device in i...
- Patent number 5,837,598
- Issue date Nov 17, 1998
- LSI Logic Corporation
- Sheldon Aronowitz
- H01 - BASIC ELECTRIC ELEMENTS

John Haywood

Person

Patents Grantslast 30 patents

Process for etching a controllable thickness of oxide on an integra...

PROCESS FOR FORMING THIN GATE OXIDE WITH ENHANCED RELIABILITY BY NI...

Composite semiconductor gate dielectrics

Method of forming variable thickness gate dielectrics

Process for forming photoresist mask over integrated circuit struct...

Process for forming integrated circuit structure with metal silicid...

Diffusion barrier for polysilicon gate electrode of MOS device in i...