John O. Borland

Person

S. Hamilton, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Formation of doped regions and/or ultra-shallow junctions in semico...
- Patent number 7,410,890
- Issue date Aug 12, 2008
- TEL Epion Inc.
- Allen R. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of ultra-shallow junctions by gas-cluster ion irradiation
- Patent number 7,396,745
- Issue date Jul 8, 2008
- TEL Epion Inc.
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming doped and un-doped strained semiconductor materi...
- Patent number 7,259,036
- Issue date Aug 21, 2007
- TEL Epion Inc.
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simplified semiconductor device manufacturing using low energy high...
- Patent number 6,187,643
- Issue date Feb 13, 2001
- Varian Semiconductor Equipment Associates, Inc.
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for cmos latch-up improvement by mev billi (buried implanted...
- Patent number 5,821,589
- Issue date Oct 13, 1998
- Genus, Inc.
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having at least one field oxide area and CMOS...
- Patent number 5,814,866
- Issue date Sep 29, 1998
- Genus, Inc.
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of constructing CMOS vertically modulated wells (VMW) by clu...
- Patent number 5,501,993
- Issue date Mar 26, 1996
- Genus, Inc.
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF INTRODUCING MATERIAL INTO A SUBSTRATE BY GAS-CLUSTER ION...
- Publication number 20080245974
- Publication date Oct 9, 2008
- TEL Epion Inc.
- Allen R. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Replacement gate field effect transistor with germanium or SiGe cha...
- Publication number 20060292762
- Publication date Dec 28, 2006
- Epion Corporation
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of doped regions and/or ultra-shallow junctions in semico...
- Publication number 20050277246
- Publication date Dec 15, 2005
- Epion Corporation
- Allen R. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of ultra-shallow junctions by gas-cluster ion irradiation
- Publication number 20050202657
- Publication date Sep 15, 2005
- Epion Corporation
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming doped and un-doped strained semiconductor and se...
- Publication number 20050181621
- Publication date Aug 18, 2005
- Epion Corporation
- John O. Borland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming ultra shallow junctions
- Publication number 20030096490
- Publication date May 22, 2003
- John Borland
- H01 - BASIC ELECTRIC ELEMENTS

John O. Borland

Person

Patents Grantslast 30 patents

Formation of doped regions and/or ultra-shallow junctions in semico...

Formation of ultra-shallow junctions by gas-cluster ion irradiation

Methods of forming doped and un-doped strained semiconductor materi...

Simplified semiconductor device manufacturing using low energy high...

Method for cmos latch-up improvement by mev billi (buried implanted...

Semiconductor device having at least one field oxide area and CMOS...

Method of constructing CMOS vertically modulated wells (VMW) by clu...

Patents Applicationslast 30 patents

METHOD OF INTRODUCING MATERIAL INTO A SUBSTRATE BY GAS-CLUSTER ION...

Replacement gate field effect transistor with germanium or SiGe cha...

Formation of doped regions and/or ultra-shallow junctions in semico...

Formation of ultra-shallow junctions by gas-cluster ion irradiation

Methods of forming doped and un-doped strained semiconductor and se...

Method of forming ultra shallow junctions