Judith A. Wright

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Essex Junction, VT, US

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming a crack stop void in a low-k dielectric layer bet...
- Patent number 7,479,447
- Issue date Jan 20, 2009
- International Business Machines Corporation
- Timothy H. Daubenspeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor trench capacitor cell having a buried strap
- Patent number 5,770,876
- Issue date Jun 23, 1998
- International Business Machines Corporation
- Chung Hon Lam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making semiconductor trench capacitor cell having a burie...
- Patent number 5,545,583
- Issue date Aug 13, 1996
- International Business Machines Corporation
- Chung H. Lam
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING A CRACK STOP VOID IN A LOW-K DIELECTRIC LAYER BET...
- Publication number 20060223242
- Publication date Oct 5, 2006
- Timothy H. Daubenspeck
- H01 - BASIC ELECTRIC ELEMENTS