Laurent VALLIER

Person

Meylan, FR

People

Patents Grantslast 30 patents

Information Patent Grant
Method of etching a porous dielectric material
- Patent number 10,062,602
- Issue date Aug 28, 2018
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Nicolas Posseme
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming spacers for a transistor gate
- Patent number 9,583,339
- Issue date Feb 28, 2017
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Nicolas Posseme
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Microelectronic method for etching a layer
- Patent number 9,570,317
- Issue date Feb 14, 2017
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Nicolas Posseme
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of obtaining patters in an antireflective layer
- Patent number 9,048,011
- Issue date Jun 2, 2015
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Nicolas Posseme
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded test structure for trimming process control
- Patent number 8,956,886
- Issue date Feb 17, 2015
- Applied Materials, Inc.
- Samer Banna
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Process for making a gate for a short channel CMOS transistor struc...
- Patent number 6,818,488
- Issue date Nov 16, 2004
- Commissariat a l'Energie Atomique
- Olivier Joubert
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR FORMING SPACERS FOR A TRANSISTOR GATE
- Publication number 20160300709
- Publication date Oct 13, 2016
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Nicolas POSSEME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC METHOD FOR ETCHING A LAYER
- Publication number 20160035581
- Publication date Feb 4, 2016
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Nicolas POSSEME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EMBEDDED TEST STRUCTURE FOR TRIMMING PROCESS CONTROL
- Publication number 20140273297
- Publication date Sep 18, 2014
- Applied Materials, Inc.
- SAMER BANNA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF OBTAINING PATTERS IN AN ANTIREFLECTIVE LAYER
- Publication number 20140183159
- Publication date Jul 3, 2014
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Nicolas POSSEME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ETCHING A POROUS DIELECTRIC MATERIAL
- Publication number 20140187035
- Publication date Jul 3, 2014
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Nicolas POSSEME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING SPACERS FOR A TRANSITOR GATE
- Publication number 20140187046
- Publication date Jul 3, 2014
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE. ALT.
- Nicolas POSSEME
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for producing a gate for a cmos transistor structure having...
- Publication number 20040104411
- Publication date Jun 3, 2004
- Olivier Joubert
- H01 - BASIC ELECTRIC ELEMENTS

Laurent VALLIER

Person

Patents Grantslast 30 patents

Method of etching a porous dielectric material

Method for forming spacers for a transistor gate

Microelectronic method for etching a layer

Method of obtaining patters in an antireflective layer

Embedded test structure for trimming process control

Process for making a gate for a short channel CMOS transistor struc...

Patents Applicationslast 30 patents

METHOD FOR FORMING SPACERS FOR A TRANSISTOR GATE

MICROELECTRONIC METHOD FOR ETCHING A LAYER

EMBEDDED TEST STRUCTURE FOR TRIMMING PROCESS CONTROL

METHOD OF OBTAINING PATTERS IN AN ANTIREFLECTIVE LAYER

METHOD OF ETCHING A POROUS DIELECTRIC MATERIAL

METHOD FOR FORMING SPACERS FOR A TRANSITOR GATE

Method for producing a gate for a cmos transistor structure having...