Masaaki IKEGAMI

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 9,627,383
- Issue date Apr 18, 2017
- Mitsubishi Electric Corporation
- Naoto Kaguchi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide band gap semiconductor device
- Patent number 9,472,543
- Issue date Oct 18, 2016
- Mitsubishi Electric Corporation
- Eisuke Suekawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Jig for use in semiconductor test and method of measuring breakdown...
- Patent number 9,007,081
- Issue date Apr 14, 2015
- Mitsubishi Electric Corporation
- Masaaki Ikegami
- G01 - MEASURING TESTING
Information Patent Grant
Jig for semiconductor test
- Patent number 8,860,451
- Issue date Oct 14, 2014
- Mitshubishi Electronic Corporation
- Naoto Kaguchi
- G01 - MEASURING TESTING
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 6,939,802
- Issue date Sep 6, 2005
- Mitsubishi Denki Kabushiki Kaisha
- Masaaki Ikegami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a bipolar transistor
- Patent number 5,973,384
- Issue date Oct 26, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Masaaki Ikegami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having polysilicon r...
- Patent number 5,956,592
- Issue date Sep 21, 1999
- Mitsubishi Denki Kabushiki Kaisha
- Masaaki Ikegami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar semiconductor device and fabricating method thereof
- Patent number 5,763,935
- Issue date Jun 9, 1998
- Mitsubishi Denki Kabushiki Kaisha
- Masaaki Ikegami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor IIL device with dielectric...
- Patent number 5,693,543
- Issue date Dec 2, 1997
- Mitsubishi Denki Kabushiki Kaisha
- Yasuki Yoshihisa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having polysilicon resistors with a specific r...
- Patent number 5,500,553
- Issue date Mar 19, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Masaaki Ikegami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor IIL device with dielectric and diffusion isolation
- Patent number 5,481,130
- Issue date Jan 2, 1996
- Mitsubishi Denki Kabushiki Kaisha
- Yasuki Yoshihisa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with hydrogen ion in...
- Patent number 5,470,764
- Issue date Nov 28, 1995
- Mitsubishi Denki Kabushik Kaisha
- Masaaki Ikegami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with hydrogen ion intercepting layer
- Patent number 5,327,224
- Issue date Jul 5, 1994
- Mitsubishi Denki Kabushiki Kaisha
- Masaaki Ikegami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for making the same
- Patent number 4,884,120
- Issue date Nov 28, 1989
- Mitsubishi Denki Kabushiki Kaisha
- Hiroshi Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR ANNEALING APPARATUS
- Publication number 20170160012
- Publication date Jun 8, 2017
- Mitsubishi Electric Corporation
- Kazuo KOBAYASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160163703
- Publication date Jun 9, 2016
- Mitsubishi Electric Corporation
- Naoto KAGUCHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WIDE BAND GAP SEMICONDUCTOR DEVICE
- Publication number 20150008450
- Publication date Jan 8, 2015
- Mitsubishi Electric Corporation
- Eisuke SUEKAWA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JIG FOR USE IN SEMICONDUCTOR TEST AND METHOD OF MEASURING BREAKDOWN...
- Publication number 20130106453
- Publication date May 2, 2013
- MITSUBISHI ELECTRIC CORPORATION
- Masaaki IKEGAMI
- G01 - MEASURING TESTING
Information Patent Application
JIG FOR SEMICONDUCTOR TEST
- Publication number 20120299613
- Publication date Nov 29, 2012
- MITSUBISHI ELECTRIC CORPORATION
- Naoto KAGUCHI
- G01 - MEASURING TESTING
Information Patent Application
Method of manufacturing the semiconductor device
- Publication number 20040058530
- Publication date Mar 25, 2004
- Mitsubishi Denki Kabushiki Kaisha
- Masaaki Ikegami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the semiconductor...
- Publication number 20020155653
- Publication date Oct 24, 2002
- Mitsubishi Denki Kabushiki Kaisha
- Masaaki Ikegami
- H01 - BASIC ELECTRIC ELEMENTS

Masaaki IKEGAMI

Person

Patents Grantslast 30 patents

Semiconductor device

Wide band gap semiconductor device

Jig for use in semiconductor test and method of measuring breakdown...

Jig for semiconductor test

Method of manufacturing a semiconductor device

Semiconductor device including a bipolar transistor

Method of manufacturing a semiconductor device having polysilicon r...

Bipolar semiconductor device and fabricating method thereof

Method of manufacturing a semiconductor IIL device with dielectric...

Semiconductor device having polysilicon resistors with a specific r...

Semiconductor IIL device with dielectric and diffusion isolation

Method of manufacturing a semiconductor device with hydrogen ion in...

Semiconductor device with hydrogen ion intercepting layer

Semiconductor device and method for making the same

Patents Applicationslast 30 patents

SEMICONDUCTOR ANNEALING APPARATUS

SEMICONDUCTOR DEVICE

WIDE BAND GAP SEMICONDUCTOR DEVICE

JIG FOR USE IN SEMICONDUCTOR TEST AND METHOD OF MEASURING BREAKDOWN...

JIG FOR SEMICONDUCTOR TEST

Method of manufacturing the semiconductor device

Semiconductor device and method of manufacturing the semiconductor...