Masakatsu Tsuchiaki

Person

Tokyo, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device manufacturing method and semiconductor device
- Patent number 9,093,504
- Issue date Jul 28, 2015
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a magnetization configuration of source...
- Patent number 7,939,869
- Issue date May 10, 2011
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 7,919,813
- Issue date Apr 5, 2011
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a nickel silicide layer on a single cry...
- Patent number 7,786,538
- Issue date Aug 31, 2010
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 7,755,114
- Issue date Jul 13, 2010
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device fabrication method and semiconductor device fa...
- Patent number 7,732,875
- Issue date Jun 8, 2010
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS semiconductor device and method of fabricating the same
- Patent number 7,701,017
- Issue date Apr 20, 2010
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacture thereof
- Patent number 7,696,575
- Issue date Apr 13, 2010
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET-type semiconductor device, and method of manufacturing the same
- Patent number 7,678,652
- Issue date Mar 16, 2010
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 7,622,774
- Issue date Nov 24, 2009
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET-type semiconductor device, and method of manufacturing the same
- Patent number 7,420,230
- Issue date Sep 2, 2008
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device including a silicide...
- Patent number 7,378,344
- Issue date May 27, 2008
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including silicided source and drain electrodes
- Patent number 7,157,777
- Issue date Jan 2, 2007
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including forming an amorphous silicon layer o...
- Patent number 7,115,905
- Issue date Oct 3, 2006
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device and semiconductor device
- Patent number 7,094,693
- Issue date Aug 22, 2006
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor device including forming an amorp...
- Patent number 6,815,298
- Issue date Nov 9, 2004
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with oxygen doped regions
- Patent number 6,683,356
- Issue date Jan 27, 2004
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having different gate insulating films with di...
- Patent number 6,545,327
- Issue date Apr 8, 2003
- Toshiba Corporation
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a carbon containing insulation layer fo...
- Patent number 6,271,566
- Issue date Aug 7, 2001
- Toshiba Corporation
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching end point detecting method based on junction current measur...
- Patent number 6,127,237
- Issue date Oct 3, 2000
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device by detachably mounti...
- Patent number 6,054,371
- Issue date Apr 25, 2000
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor integrated circuit manufacturing method and device
- Patent number 6,051,509
- Issue date Apr 18, 2000
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for silicon island formation
- Patent number 5,963,789
- Issue date Oct 5, 1999
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20130320543
- Publication date Dec 5, 2013
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20100044766
- Publication date Feb 25, 2010
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20090200592
- Publication date Aug 13, 2009
- Kabushiki Kaisha Toshiba
- Masakatsu TSUCHIAKI
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20090065877
- Publication date Mar 12, 2009
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET-type semiconductor device, and method of manufacturing the same
- Publication number 20080299719
- Publication date Dec 4, 2008
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE FABRICATION METHOD AND SEMICONDUCTOR DEVICE FA...
- Publication number 20080203440
- Publication date Aug 28, 2008
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20070246781
- Publication date Oct 25, 2007
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF
- Publication number 20070176209
- Publication date Aug 2, 2007
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20070018236
- Publication date Jan 25, 2007
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060281304
- Publication date Dec 14, 2006
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device and semiconductor device
- Publication number 20060264046
- Publication date Nov 23, 2006
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET-type semiconductor device, and method of manufacturing the same
- Publication number 20060175667
- Publication date Aug 10, 2006
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device and semiconductor device
- Publication number 20050202663
- Publication date Sep 15, 2005
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20040256645
- Publication date Dec 23, 2004
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device including forming an amorphous silicon layer o...
- Publication number 20040245581
- Publication date Dec 9, 2004
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of manufacturing semiconductor device and semiconductor device
- Publication number 20030062575
- Publication date Apr 3, 2003
- Kabushiki Kaisha Toshiba
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20020182831
- Publication date Dec 5, 2002
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor integrated circuit manufacturing method and device
- Publication number 20010025998
- Publication date Oct 4, 2001
- TOSHIBA CORPORATION`
- Masakatsu Tsuchiaki
- H01 - BASIC ELECTRIC ELEMENTS

Masakatsu Tsuchiaki

Person

Patents Grantslast 30 patents

Semiconductor device manufacturing method and semiconductor device

Semiconductor device having a magnetization configuration of source...

Method of manufacturing semiconductor device and semiconductor device

Semiconductor device having a nickel silicide layer on a single cry...

Semiconductor device and manufacturing method thereof

Semiconductor device fabrication method and semiconductor device fa...

MOS semiconductor device and method of fabricating the same

Semiconductor device and method of manufacture thereof

MOSFET-type semiconductor device, and method of manufacturing the same

Method of manufacturing semiconductor device and semiconductor device

MOSFET-type semiconductor device, and method of manufacturing the same

Method of manufacturing a semiconductor device including a silicide...

Semiconductor device including silicided source and drain electrodes

Semiconductor device including forming an amorphous silicon layer o...

Method of manufacturing semiconductor device and semiconductor device

Method of forming a semiconductor device including forming an amorp...

Semiconductor device with oxygen doped regions

Semiconductor device having different gate insulating films with di...

Semiconductor device having a carbon containing insulation layer fo...

Etching end point detecting method based on junction current measur...

Method of manufacturing a semiconductor device by detachably mounti...

Semiconductor integrated circuit manufacturing method and device

Method for silicon island formation

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE

METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

MOSFET-type semiconductor device, and method of manufacturing the same

SEMICONDUCTOR DEVICE FABRICATION METHOD AND SEMICONDUCTOR DEVICE FA...

MOS SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor device and semiconductor device

MOSFET-type semiconductor device, and method of manufacturing the same

Method of manufacturing semiconductor device and semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor device including forming an amorphous silicon layer o...

Method of manufacturing semiconductor device and semiconductor device

Semiconductor device and method of manufacturing the same

Semiconductor integrated circuit manufacturing method and device