Masayuki Hoteida

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Osaka-Shi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Epitaxial wafer for heterojunction type field effect transistor
- Patent number 9,111,839
- Issue date Aug 18, 2015
- Sharp Kabushiki Kaisha
- Masayuki Hoteida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride semiconductor structure, nitride semiconductor light emitti...
- Patent number 8,963,165
- Issue date Feb 24, 2015
- Sharp Kabushiki Kaisha
- Masahiro Araki
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL WAFER FOR HETEROJUNCTION TYPE FIELD EFFECT TRANSISTOR
- Publication number 20140353587
- Publication date Dec 4, 2014
- Masayuki Hoteida
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE SEMICONDUCTOR STRUCTURE, NITRIDE SEMICONDUCTOR LIGHT EMITTI...
- Publication number 20130277684
- Publication date Oct 24, 2013
- Masahiro Araki
- H01 - BASIC ELECTRIC ELEMENTS