Munzarin F. Qayyum

Person

Hillsboro, OR, US

People

Patents Applicationslast 30 patents

Information Patent Application
CAPPING NANORIBBON FINS IN SUPERLATTICE STRUCTURES DURING FABRICATION
- Publication number 20250212522
- Publication date Jun 26, 2025
- Intel Corporation
- Cheng-Ying Huang
Information Patent Application
GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...
- Publication number 20250113603
- Publication date Apr 3, 2025
- Intel Corporation
- Munzarin QAYYUM
Information Patent Application
TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...
- Publication number 20240222521
- Publication date Jul 4, 2024
- Intel Corporation
- Evan A. Clinton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...
- Publication number 20240222376
- Publication date Jul 4, 2024
- Intel Corporation
- Marko Radosavljevic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORI...
- Publication number 20240204060
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS
- Publication number 20240204103
- Publication date Jun 20, 2024
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE SPACER IN STACKED GATE-ALL-AROUND (GAA) DEVICE ARCHITECTURE
- Publication number 20240006499
- Publication date Jan 4, 2024
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES
- Publication number 20230420460
- Publication date Dec 28, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS
- Publication number 20230420562
- Publication date Dec 28, 2023
- Intel Corporation
- Cheng-Ying Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES
- Publication number 20230402507
- Publication date Dec 14, 2023
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURC...
- Publication number 20230402513
- Publication date Dec 14, 2023
- Intel Corporation
- Rohit Galatage
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE REMOVAL OF CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA...
- Publication number 20230395678
- Publication date Dec 7, 2023
- Intel Corporation
- Munzarin F. Qayyum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DE...
- Publication number 20230395697
- Publication date Dec 7, 2023
- Intel Corporation
- Nicole K. Thomas
- H01 - BASIC ELECTRIC ELEMENTS

Munzarin F. Qayyum

Person

Patents Applicationslast 30 patents

CAPPING NANORIBBON FINS IN SUPERLATTICE STRUCTURES DURING FABRICATION

GATE-ALL-AROUND INTEGRATED CIRCUIT STRUCTURES HAVING DEPOPULATED CH...

TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...

TECHNOLOGIES FOR RIBBON FIELD EFFECT TRANSISTORS WITH VARIABLE FIN...

NANORIBBON STACKS WITHOUT DIELECTRIC PROTECTION CAPS FOR TOP NANORI...

TRANSISTOR GATE-CHANNEL ARRANGEMENTS WITH MULTIPLE DIPOLE MATERIALS

GATE SPACER IN STACKED GATE-ALL-AROUND (GAA) DEVICE ARCHITECTURE

LOWER DEVICE ACCESS IN STACKED TRANSISTOR DEVICES

DIFFUSION CUT STRESSORS FOR STACKED TRANSISTORS

DUAL METAL SILICIDE FOR STACKED TRANSISTOR DEVICES

SOURCE AND DRAIN CONTACTS FORMED USING SACRIFICIAL REGIONS OF SOURC...

SELECTIVE REMOVAL OF CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA...

REMOVAL OF UPPER CHANNEL BODIES IN STACKED GATE-ALL-AROUND (GAA) DE...