Naoki Yokoyama

Person

Yokohama, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor manufacturing method and semiconductor device
- Patent number 9,355,916
- Issue date May 31, 2016
- Fujitsu Limited
- Daiyu Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor optical device and an optical processing system that...
- Patent number 5,889,296
- Issue date Mar 30, 1999
- Fujitsu Limited
- Kenichi Imamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor optical device and an optical processing system that...
- Patent number 5,677,551
- Issue date Oct 14, 1997
- Fujitsu Limited
- Kenichi Imamura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including Schottky gate of silicide and method...
- Patent number 5,536,967
- Issue date Jul 16, 1996
- Fujitsu Limited
- Naoki Yokoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resonant-tunneling heterojunction bipolar transistor device
- Patent number 5,389,804
- Issue date Feb 14, 1995
- Fujitsu Limited
- Naoki Yokoyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor memory device that uses a negative differential resis...
- Patent number 5,311,465
- Issue date May 10, 1994
- Fujitsu Limited
- Toshihiko Mori
- G11 - INFORMATION STORAGE
Information Patent Grant
High-speed semiconductor device
- Patent number 5,214,297
- Issue date May 25, 1993
- Fujitsu Limited
- Kenichi Imamura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device including schotky gate of silicide and method...
- Patent number 5,200,349
- Issue date Apr 6, 1993
- Fujitsu Limited
- Naoki Yokoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Resonant-tunneling heterojunction bipolar transistor device
- Patent number 5,151,618
- Issue date Sep 29, 1992
- Fujitsu Limited
- Naoki Yokoyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum interference type semiconductor device
- Patent number 5,130,766
- Issue date Jul 14, 1992
- Fujitsu Limited
- Hiroshi Arimoto
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 5,031,005
- Issue date Jul 9, 1991
- Fujitsu Limited
- Toshiro Futatsugi
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Resonant-tunneling heterojunction bipolar transistor device
- Patent number 5,027,179
- Issue date Jun 25, 1991
- Fujitsu Limited
- Naoki Yokoyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor quantum effect device having negative differential re...
- Patent number 5,021,863
- Issue date Jun 4, 1991
- Fujitsu Limited
- Naoki Yokoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor functional element
- Patent number 5,003,360
- Issue date Mar 26, 1991
- Fujitsu Limited
- Makoto Okada
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Quantum effect semiconductor device
- Patent number 4,989,052
- Issue date Jan 29, 1991
- Fujitsu Limited
- Makoto Okada
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Ternary logic circuit using resonant-tunneling transistors
- Patent number 4,956,681
- Issue date Sep 11, 1990
- Fujitsu Limited
- Naoki Yokoyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device
- Patent number 4,903,090
- Issue date Feb 20, 1990
- Fujitsu Limited
- Naoki Yokoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a high temperature stable ohmic contact to a III-...
- Patent number 4,889,831
- Issue date Dec 26, 1989
- Fujitsu Limited
- Kazuaki Ishii
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Logic circuit using resonant-tunneling transistor
- Patent number 4,849,934
- Issue date Jul 18, 1989
- Fujitsu Limited
- Naoki Yokoyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for producing a semiconductor integrated circuit having an i...
- Patent number 4,837,178
- Issue date Jun 6, 1989
- Fujitsu Limited
- Toshio Ohshima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor integrated circuit device
- Patent number 4,821,090
- Issue date Apr 11, 1989
- Fujitsu Limited
- Naoki Yokoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-speed semiconductor device
- Patent number 4,712,121
- Issue date Dec 8, 1987
- Fujitsu Limited
- Naoki Yokoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for fabricating heterojunction bipolar transistor with low...
- Patent number 4,617,724
- Issue date Oct 21, 1986
- Fujitsu Limited
- Naoki Yokoyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin film resistor for an integrated circuit semiconductor device
- Patent number 4,609,903
- Issue date Sep 2, 1986
- Fujitsu Limited
- Nobuo Toyokura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 4,566,021
- Issue date Jan 21, 1986
- Fujitsu Limited
- Naoki Yokoyama
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE
- Publication number 20150279747
- Publication date Oct 1, 2015
- FUJITSU LIMITED
- Daiyu Kondo
- H01 - BASIC ELECTRIC ELEMENTS

Naoki Yokoyama

Person

Patents Grantslast 30 patents

Semiconductor manufacturing method and semiconductor device

Semiconductor optical device and an optical processing system that...

Semiconductor optical device and an optical processing system that...

Semiconductor device including Schottky gate of silicide and method...

Resonant-tunneling heterojunction bipolar transistor device

Semiconductor memory device that uses a negative differential resis...

High-speed semiconductor device

Semiconductor device including schotky gate of silicide and method...

Resonant-tunneling heterojunction bipolar transistor device

Quantum interference type semiconductor device

Semiconductor device

Resonant-tunneling heterojunction bipolar transistor device

Semiconductor quantum effect device having negative differential re...

Semiconductor functional element

Quantum effect semiconductor device

Ternary logic circuit using resonant-tunneling transistors

Semiconductor device

Method of forming a high temperature stable ohmic contact to a III-...

Logic circuit using resonant-tunneling transistor

Method for producing a semiconductor integrated circuit having an i...

Compound semiconductor integrated circuit device

High-speed semiconductor device

Process for fabricating heterojunction bipolar transistor with low...

Thin film resistor for an integrated circuit semiconductor device

Semiconductor device

Patents Applicationslast 30 patents

SEMICONDUCTOR MANUFACTURING METHOD AND SEMICONDUCTOR DEVICE