Nobuyoshi Fujimaki

Person

Annaka, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Heat treatment of Si single crystal
- Patent number 5,834,322
- Issue date Nov 10, 1998
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Semiconductor crystal packaging device
- Patent number 5,823,351
- Issue date Oct 20, 1998
- Shin-Etsu Handotai Co., Ltd.
- Shinichi Matsuo
- B65 - CONVEYING PACKING STORING HANDLING THIN OR FILAMENTARY MATERIAL
Information Patent Grant
Method of evaluating a MIS-type semiconductor device
- Patent number 5,701,088
- Issue date Dec 23, 1997
- Shin-Etsu Handotai Co., Ltd.
- Nobuyoshi Fujimaki
- G01 - MEASURING TESTING
Information Patent Grant
Method for testing electrical properties of silicon single crystal
- Patent number 5,688,319
- Issue date Nov 18, 1997
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- G01 - MEASURING TESTING
Information Patent Grant
Process and apparatus for manufacturing MOS device
- Patent number 5,683,513
- Issue date Nov 4, 1997
- Shin-Etsu Handotai Co., Ltd.
- Nobuyoshi Fujimaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of oxidizing a semiconductor wafer
- Patent number 5,620,932
- Issue date Apr 15, 1997
- Shin-Etsu Handotai Co., Ltd.
- Nobuyoshi Fujimaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process and apparatus for manufacturing MOS device
- Patent number 5,602,061
- Issue date Feb 11, 1997
- Shin-Etsu Handotai Co., Ltd.
- Nobuyoshi Fujimaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for testing electrical properties of silicon single crystal
- Patent number 5,534,112
- Issue date Jul 9, 1996
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- G01 - MEASURING TESTING
Information Patent Grant
Method of producing MOS devices
- Patent number 5,492,845
- Issue date Feb 20, 1996
- Shin-Etsu Handotai Co., Ltd.
- Nobuyoshi Fujimaki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for evaluation of semiconductor production pro...
- Patent number 5,464,779
- Issue date Nov 7, 1995
- Shin-Etsu Handotai Co., Ltd.
- Nobuyoshi Fujimaki
- G01 - MEASURING TESTING
Information Patent Grant
Method and apparatus for measuring high-frequency C-V characteristi...
- Patent number 5,442,302
- Issue date Aug 15, 1995
- Shin-Etsu Handotai Co., Ltd.
- Nobuyoshi Fujimaki
- G01 - MEASURING TESTING
Information Patent Grant
Method for testing quality of silicon wafer
- Patent number 5,386,796
- Issue date Feb 7, 1995
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for fabrication of semiconductor device
- Patent number 5,262,338
- Issue date Nov 16, 1993
- Shin-Etsu Handotai Co., Ltd.
- Izumi Fusegawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for producing silicon single crystal
- Patent number 5,248,378
- Issue date Sep 28, 1993
- Shin-Etsu Handotai Co., Ltd.
- Tetsuhiro Oda
- C30 - CRYSTAL GROWTH

Nobuyoshi Fujimaki

Person

Patents Grantslast 30 patents

Heat treatment of Si single crystal

Semiconductor crystal packaging device

Method of evaluating a MIS-type semiconductor device

Method for testing electrical properties of silicon single crystal

Process and apparatus for manufacturing MOS device

Method of oxidizing a semiconductor wafer

Process and apparatus for manufacturing MOS device

Method for testing electrical properties of silicon single crystal

Method of producing MOS devices

Method and apparatus for evaluation of semiconductor production pro...

Method and apparatus for measuring high-frequency C-V characteristi...

Method for testing quality of silicon wafer

Method for fabrication of semiconductor device

Method and apparatus for producing silicon single crystal