Pan Huang

Person

Wuhan, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Three-dimensional memory and fabrication method thereof
- Patent number 12,052,871
- Issue date Jul 30, 2024
- Yangtze Memory Technologies Co., Ltd.
- Ji Xia
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 12,035,523
- Issue date Jul 9, 2024
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device without gate line slits and method...
- Patent number 11,963,356
- Issue date Apr 16, 2024
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,805,650
- Issue date Oct 31, 2023
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
Information Patent Grant
Contact structures having conductive portions in substrate in three...
- Patent number 11,792,980
- Issue date Oct 17, 2023
- Yangtze Memory Technologies Co., Ltd.
- Ji Xia
- G11 - INFORMATION STORAGE
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,785,772
- Issue date Oct 10, 2023
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device without gate line slits and method...
- Patent number 11,765,897
- Issue date Sep 19, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
Information Patent Grant
Three-dimensional memory device with source contacts connected by a...
- Patent number 11,758,723
- Issue date Sep 12, 2023
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Qingqing Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with support structures in gate lin...
- Patent number 11,716,850
- Issue date Aug 1, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,653,495
- Issue date May 16, 2023
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,437,398
- Issue date Sep 6, 2022
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures having conductive portions in substrate in three...
- Patent number 11,411,014
- Issue date Aug 9, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ji Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory and fabrication method thereof
- Patent number 11,271,007
- Issue date Mar 8, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ji Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory devices and fabricating methods thereof
- Patent number 11,257,831
- Issue date Feb 22, 2022
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device without gate line slits and method...
- Patent number 11,251,195
- Issue date Feb 15, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,211,394
- Issue date Dec 28, 2021
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
(GaMe)2O3 ternary alloy material, its preparation method and applic...
- Patent number 11,201,254
- Issue date Dec 14, 2021
- HUBEI UNIVERSITY
- Yunbin He
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact structures having conductive portions in substrate in three...
- Patent number 11,195,853
- Issue date Dec 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ji Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for forming three-dimensional memory device with support st...
- Patent number 11,183,512
- Issue date Nov 23, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,127,757
- Issue date Sep 21, 2021
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with support structures in gate lin...
- Patent number 11,114,458
- Issue date Sep 7, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with source structure and methods f...
- Patent number 11,101,286
- Issue date Aug 24, 2021
- Yangtze Memory Technologies Co., Ltd.
- Pan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with source contacts connected by a...
- Patent number 11,094,713
- Issue date Aug 17, 2021
- Yangtze Memory Technologies Co., Ltd.
- Qingqing Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with support structures in slit str...
- Patent number 11,094,712
- Issue date Aug 17, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional memory device with source contacts connected by a...
- Patent number 11,043,565
- Issue date Jun 22, 2021
- Yangtze Memory Technologies Co., Ltd.
- Zhengliang Xia
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20240324224
- Publication date Sep 26, 2024
- Yangtze Memory Technologies Co., Ltd.
- Ji XIA
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN GATE LIN...
- Publication number 20230292511
- Publication date Sep 14, 2023
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD...
- Publication number 20220115402
- Publication date Apr 14, 2022
- Yangtze Memory Technologies Co., Ltd.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...
- Publication number 20220102377
- Publication date Mar 31, 2022
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES HAVING CONDUCTIVE PORTIONS IN SUBSTRATE IN THREE...
- Publication number 20220085044
- Publication date Mar 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ji Xia
- G11 - INFORMATION STORAGE
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20220085042
- Publication date Mar 17, 2022
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...
- Publication number 20220077171
- Publication date Mar 10, 2022
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20220028890
- Publication date Jan 27, 2022
- Yangtze Memory Technologies Co., Ltd.
- Ji XIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...
- Publication number 20210272978
- Publication date Sep 2, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...
- Publication number 20210183878
- Publication date Jun 17, 2021
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE CONTACTS CONNECTED BY A...
- Publication number 20210167084
- Publication date Jun 3, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Qingqing Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF
- Publication number 20210167076
- Publication date Jun 3, 2021
- Yangtze Memory Technologies Co., Ltd.
- Wenxiang XU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN GATE LIN...
- Publication number 20210167086
- Publication date Jun 3, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES HAVING CONDUCTIVE PORTIONS IN SUBSTRATE IN THREE...
- Publication number 20210159238
- Publication date May 27, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Ji Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES HAVING CONDUCTIVE PORTIONS IN SUBSTRATE IN THREE...
- Publication number 20210159244
- Publication date May 27, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Ji Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD...
- Publication number 20210104549
- Publication date Apr 8, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE CONTACTS CONNECTED BY A...
- Publication number 20210066461
- Publication date Mar 4, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zhengliang Xia
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE CONTACTS CONNECTED BY A...
- Publication number 20210066336
- Publication date Mar 4, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Qingqing Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF
- Publication number 20210066337
- Publication date Mar 4, 2021
- Yangtze Memory Technologies Co., Ltd.
- Ji XIA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...
- Publication number 20210050358
- Publication date Feb 18, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...
- Publication number 20210050367
- Publication date Feb 18, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Wenxiang Xu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...
- Publication number 20210050366
- Publication date Feb 18, 2021
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Pan Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT ST...
- Publication number 20200395373
- Publication date Dec 17, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD...
- Publication number 20200395375
- Publication date Dec 17, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN SLIT STR...
- Publication number 20200395374
- Publication date Dec 17, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN GATE LIN...
- Publication number 20200395376
- Publication date Dec 17, 2020
- YANGTZE MEMORY TECHNOLOGIES CO., LTD.
- Zongliang Huo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
(GaMe)2O3 ternary alloy material, its preparation method and applic...
- Publication number 20200287067
- Publication date Sep 10, 2020
- HUBEI UNIVERSITY
- Yunbin He
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Three-dimensional memory and fabrication method thereof

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional memory device without gate line slits and method...

Three-dimensional memory device with source structure and methods f...

Contact structures having conductive portions in substrate in three...

Three-dimensional memory device with source structure and methods f...

Three-dimensional memory device without gate line slits and method...

Three-dimensional memory device with source contacts connected by a...

Three-dimensional memory device with support structures in gate lin...

Three-dimensional memory device with source structure and methods f...

Three-dimensional memory device with source structure and methods f...

Contact structures having conductive portions in substrate in three...

Three-dimensional memory and fabrication method thereof

Three-dimensional memory devices and fabricating methods thereof

Three-dimensional memory device without gate line slits and method...

Three-dimensional memory device with source structure and methods f...

(GaMe)2O3 ternary alloy material, its preparation method and applic...

Contact structures having conductive portions in substrate in three...

Methods for forming three-dimensional memory device with support st...

Three-dimensional memory device with source structure and methods f...

Three-dimensional memory device with support structures in gate lin...

Three-dimensional memory device with source structure and methods f...

Three-dimensional memory device with source contacts connected by a...

Three-dimensional memory device with support structures in slit str...

Three-dimensional memory device with source contacts connected by a...

Patents Applicationslast 30 patents

THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN GATE LIN...

THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD...

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...

CONTACT STRUCTURES HAVING CONDUCTIVE PORTIONS IN SUBSTRATE IN THREE...

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...

THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE CONTACTS CONNECTED BY A...

THREE-DIMENSIONAL MEMORY DEVICES AND FABRICATING METHODS THEREOF

THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN GATE LIN...

CONTACT STRUCTURES HAVING CONDUCTIVE PORTIONS IN SUBSTRATE IN THREE...

CONTACT STRUCTURES HAVING CONDUCTIVE PORTIONS IN SUBSTRATE IN THREE...

THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD...

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE CONTACTS CONNECTED BY A...

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE CONTACTS CONNECTED BY A...

THREE-DIMENSIONAL MEMORY AND FABRICATION METHOD THEREOF

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...

THREE-DIMENSIONAL MEMORY DEVICE WITH SOURCE STRUCTURE AND METHODS F...

METHODS FOR FORMING THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT ST...

THREE-DIMENSIONAL MEMORY DEVICE WITHOUT GATE LINE SLITS AND METHOD...

THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN SLIT STR...

THREE-DIMENSIONAL MEMORY DEVICE WITH SUPPORT STRUCTURES IN GATE LIN...

(GaMe)2O3 ternary alloy material, its preparation method and applic...