Sang-In Han

Person

Phoenix, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reflective mask useful for transferring a pattern using extreme ult...
- Patent number 7,282,307
- Issue date Oct 16, 2007
- FREESCALE SEMICONDUCTOR, INC.
- Scott D. Hector
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Reflective mask useful for transferring a pattern using extreme ult...
- Patent number 6,986,971
- Issue date Jan 17, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Sang-In Han
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Attenuated phase shift mask for extreme ultraviolet lithography and...
- Patent number 6,986,974
- Issue date Jan 17, 2006
- FREESCALE SEMICONDUCTOR, INC.
- Sang-In Han
- G21 - NUCLEAR PHYSICS NUCLEAR ENGINEERING
Information Patent Grant
Structure and process for a pellicle membrane for 157 nanometer lit...
- Patent number 6,811,936
- Issue date Nov 2, 2004
- Freescale Semiconductor Inc.
- Steven Smith
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of making an integrated circuit using a reflective mask
- Patent number 6,673,520
- Issue date Jan 6, 2004
- Motorola, Inc.
- Sang-in Han
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of forming a pattern on a semiconductor wafer using an atten...
- Patent number 6,653,053
- Issue date Nov 25, 2003
- Motorola, Inc.
- Pawitter Mangat
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Membrane mask stress measurement apparatus and method therefor
- Patent number 6,477,898
- Issue date Nov 12, 2002
- Motorola, Inc.
- Sang-In Han
- G01 - MEASURING TESTING

Patents Applicationslast 30 patents

Information Patent Application
Reflective mask useful for transferring a pattern using extreme ult...
- Publication number 20050282072
- Publication date Dec 22, 2005
- Scott D. Hector
- B82 - NANO-TECHNOLOGY
Information Patent Application
Attenuated phase shift mask for extreme ultraviolet lithography and...
- Publication number 20050084768
- Publication date Apr 21, 2005
- Sang-In Han
- B82 - NANO-TECHNOLOGY
Information Patent Application
Structure and process for a pellicle membrane for 157 nanometer lit...
- Publication number 20040126671
- Publication date Jul 1, 2004
- Steven Smith
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Reflective mask useful for transferring a pattern using extreme ult...
- Publication number 20040091789
- Publication date May 13, 2004
- Sang-In Han
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of forming a pattern on a semiconductor wafer using an atten...
- Publication number 20030039923
- Publication date Feb 27, 2003
- Pawitter Mangat
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method of making an integrated circuit using a reflective mask
- Publication number 20030039922
- Publication date Feb 27, 2003
- Sang-In Han
- B82 - NANO-TECHNOLOGY

Sang-In Han

Person

Patents Grantslast 30 patents

Reflective mask useful for transferring a pattern using extreme ult...

Reflective mask useful for transferring a pattern using extreme ult...

Attenuated phase shift mask for extreme ultraviolet lithography and...

Structure and process for a pellicle membrane for 157 nanometer lit...

Method of making an integrated circuit using a reflective mask

Method of forming a pattern on a semiconductor wafer using an atten...

Membrane mask stress measurement apparatus and method therefor

Patents Applicationslast 30 patents

Reflective mask useful for transferring a pattern using extreme ult...

Attenuated phase shift mask for extreme ultraviolet lithography and...

Structure and process for a pellicle membrane for 157 nanometer lit...

Reflective mask useful for transferring a pattern using extreme ult...

Method of forming a pattern on a semiconductor wafer using an atten...

Method of making an integrated circuit using a reflective mask