Membership
Tour
Register
Log in
Shunichi Hiraki
Follow
Person
Hyogo, JP
People
Overview
Industries
Organizations
People
Information
Impact
Patents Grants
last 30 patents
Information
Patent Grant
Semiconductor device and method of increasing device breakdown volt...
Patent number
5,554,872
Issue date
Sep 10, 1996
Kabushiki Kaisha Toshiba
Yoshiro Baba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Vertical MOSFET having trench covered with multilayer gate film
Patent number
5,321,289
Issue date
Jun 14, 1994
Kabushiki Kaisha Toshiba
Yoshiro Baba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Power semiconductor device having gate structure in trench
Patent number
5,282,018
Issue date
Jan 25, 1994
Kabushiki Kaisha Toshiba
Shunichi Hiraki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of production of vertical MOS transistor
Patent number
5,242,845
Issue date
Sep 7, 1993
Kabushiki Kaisha Toshiba
Yoshiro Baba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Vertical MOS transistor and its production method
Patent number
5,126,807
Issue date
Jun 30, 1992
Kabushiki Kaisha Toshiba
Yoshiro Baba
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for manufacturing a Schottky FET device using metal sidewal...
Patent number
4,729,966
Issue date
Mar 8, 1988
Kabushiki Kaisha Toshiba
Yutaka Koshino
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process of producing a semiconductor device
Patent number
4,647,472
Issue date
Mar 3, 1987
Tokyo Shibaura Denki Kabushiki Kaisha
Shunichi Hiraki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device monolithically comprising a V-MOSFET and bipol...
Patent number
4,589,004
Issue date
May 13, 1986
Tokyo Shibaura Denki Kabushiki Kaisha
Seiji Yasuda
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a semiconductor device
Patent number
4,560,642
Issue date
Dec 24, 1985
Toyko Shibaura Electric Co., Ltd.
Toshio Yonezawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device with multi-layered structure
Patent number
4,542,400
Issue date
Sep 17, 1985
Tokyo Shibaura Denki Kabushiki Kaisha
Shunichi Hiraki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a semiconductor device
Patent number
4,532,004
Issue date
Jul 30, 1985
Kabushiki Kaisha Toshiba
Tatsuo Akiyama
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of making integrated devices having long and short minority...
Patent number
4,521,256
Issue date
Jun 4, 1985
Tokyo Shibaura Denki Kabushiki Kaisha
Shunichi Hiraki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor memory device
Patent number
4,507,673
Issue date
Mar 26, 1985
Tokyo Shibaura Denki Kabushiki Kaisha
Masaharu Aoyama
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device with selective nitride layer over channel stop
Patent number
4,485,393
Issue date
Nov 27, 1984
Tokyo Shibaura Denki Kabushiki Kaisha
Kuniaki Kumamaru
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Diffusion of aluminum
Patent number
4,451,303
Issue date
May 29, 1984
Tokyo Shibaura Denki Kabushiki Kaisha
Shunichi Hiraki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing semiconductor device utilizing outdiffusion...
Patent number
4,379,726
Issue date
Apr 12, 1983
Tokyo Shibaura Denki Kabushiki Kaisha
Kuniaki Kumamaru
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a semiconductor device using silicon carbid...
Patent number
4,351,894
Issue date
Sep 28, 1982
Tokyo Shibaura Electric Co., Ltd.
Toshio Yonezawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Fluorine-doped P type silicon
Patent number
4,240,096
Issue date
Dec 16, 1980
Tokyo Shibaura Denki Kabushiki Kaisha
Shunichi Hiraki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Semiconductor device with multi-layered metalizations
Patent number
4,200,969
Issue date
May 6, 1980
Tokyo Shibaura Electric Co., Ltd.
Masaharu Aoyama
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of producing semiconductor device involving the use of silic...
Patent number
4,155,802
Issue date
May 22, 1979
Tokyo Shibaura Electric Co., Ltd.
Toshio Yonezawa
H01 - BASIC ELECTRIC ELEMENTS