Tetsushi Sakai

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Atugi, JP

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Patents Grantslast 30 patents

Information Patent Grant
Method of manufacturing SOI substrate
- Patent number 5,989,981
- Issue date Nov 23, 1999
- Nippon Telegraph and Telephone Corporation
- Sadao Nakashima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device of MOS structure having p-type gate electrode
- Patent number 5,189,504
- Issue date Feb 23, 1993
- Nippon Telegraph and Telephone Corporation
- Satoshi Nakayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bipolar transistor and method of manufacturing the same
- Patent number 4,780,427
- Issue date Oct 25, 1988
- Nippon Telegraph & Telephone Corporation
- Tetsushi Sakai
- H01 - BASIC ELECTRIC ELEMENTS