Thomas Gehrke

Person

Apex, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Light emitting diodes with n-polarity and associated methods of man...
- Patent number 11,843,072
- Issue date Dec 12, 2023
- Micron Technology, Inc.
- Zaiyuan Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diodes with n-polarity and associated methods of man...
- Patent number 11,049,994
- Issue date Jun 29, 2021
- Micron Technology, Inc.
- Zaiyuan Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diodes and associated methods of manufacturing
- Patent number 10,923,627
- Issue date Feb 16, 2021
- Micron Technology, Inc.
- Scott D. Schellhammer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrates for semiconductor devices and associated syst...
- Patent number 10,431,714
- Issue date Oct 1, 2019
- QROMIS, Inc.
- Martin F. Schubert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor material having a compositionally-graded transition l...
- Patent number 10,177,229
- Issue date Jan 8, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Conductive structures, wordlines and transistors
- Patent number 10,147,727
- Issue date Dec 4, 2018
- Micron Technology, Inc.
- Jaydeb Goswami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conductive structures, wordlines and transistors
- Patent number 9,972,628
- Issue date May 15, 2018
- Micron Technology, Inc.
- Jaydeb Goswami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diodes and associated methods of manufacturing
- Patent number 9,748,442
- Issue date Aug 29, 2017
- Micron Technology, Inc.
- Scott D. Schellhammer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting diodes with N-polarity and associated methods of man...
- Patent number 9,705,028
- Issue date Jul 11, 2017
- Micron Technology, Inc.
- Zaiyuan Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state lighting devices with reduced crystal lattice dislocati...
- Patent number 9,620,675
- Issue date Apr 11, 2017
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state lighting dies with quantum emitters and associated meth...
- Patent number 9,620,670
- Issue date Apr 11, 2017
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state lighting devices without converter materials and associ...
- Patent number 9,601,658
- Issue date Mar 21, 2017
- Micron Technology, Inc.
- Zaiyuan Ren
- C30 - CRYSTAL GROWTH
Information Patent Grant
Devices, systems, and methods related to removing parasitic conduct...
- Patent number 9,577,058
- Issue date Feb 21, 2017
- Micron Technology, Inc.
- Martin F. Schubert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting devices with built-in chromaticity conversion and me...
- Patent number 9,530,927
- Issue date Dec 27, 2016
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with compositionally-graded transition layer
- Patent number 9,461,119
- Issue date Oct 4, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
III-nitride based semiconductor structure
- Patent number 9,437,687
- Issue date Sep 6, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Gallium nitride devices with discontinuously graded transition layer
- Patent number 9,437,686
- Issue date Sep 6, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor growth substrates and associated systems and methods...
- Patent number 9,385,278
- Issue date Jul 5, 2016
- Micron Technology, Inc.
- Xiaolong Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Engineered substrates for semiconductor devices and associated syst...
- Patent number 9,269,858
- Issue date Feb 23, 2016
- Micron Technology, Inc.
- Martin F. Schubert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state lighting devices with reduced crystal lattice dislocati...
- Patent number 9,246,051
- Issue date Jan 26, 2016
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting devices with built-in chromaticity conversion and me...
- Patent number 9,184,336
- Issue date Nov 10, 2015
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Solid state lighting devices without converter materials and associ...
- Patent number 9,093,589
- Issue date Jul 28, 2015
- Micron Technology, Inc.
- Zaiyuan Ren
- C30 - CRYSTAL GROWTH
Information Patent Grant
Devices, systems, and methods related to removing parasitic conduct...
- Patent number 9,082,748
- Issue date Jul 14, 2015
- Micron Technology, Inc.
- Martin F. Schubert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride semiconductor structures with compositionally-grade...
- Patent number 9,064,775
- Issue date Jun 23, 2015
- International Rectifier Corporation
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Solid state lighting devices with cellular arrays and associated me...
- Patent number 9,041,005
- Issue date May 26, 2015
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming a light conversion material
- Patent number 8,969,899
- Issue date Mar 3, 2015
- Micron Technology, Inc.
- Charles M. Watkins
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor growth substrates and associated systems and methods...
- Patent number 8,951,842
- Issue date Feb 10, 2015
- Micron Technology, Inc.
- Xiaolong Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride devices with aluminum nitride intermediate layer
- Patent number 8,937,335
- Issue date Jan 20, 2015
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride devices with aluminum nitride alloy intermediate layer
- Patent number 8,928,034
- Issue date Jan 6, 2015
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gallium nitride devices with gallium nitride alloy intermediate layer
- Patent number 8,928,035
- Issue date Jan 6, 2015
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING
- Publication number 20240297269
- Publication date Sep 5, 2024
- Micron Technology, Inc.
- Scott D. Schellhammer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MAN...
- Publication number 20240128396
- Publication date Apr 18, 2024
- Micron Technology, Inc.
- Zaiyuan Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MAN...
- Publication number 20210328094
- Publication date Oct 21, 2021
- Micron Technology, Inc.
- Zaiyuan Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING
- Publication number 20210184079
- Publication date Jun 17, 2021
- Micron Technology, Inc.
- Scott D. Schellhammer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS
- Publication number 20200243651
- Publication date Jul 30, 2020
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE MATERIALS AND METHODS
- Publication number 20190229190
- Publication date Jul 25, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Application
Gallium nitride materials and methods
- Publication number 20190214468
- Publication date Jul 11, 2019
- MACOM Technology Solutions Holdings, Inc.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Conductive Structures, Wordlines and Transistors
- Publication number 20180175039
- Publication date Jun 21, 2018
- Micron Technology, Inc.
- Jaydeb Goswami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONDUCTIVE STRUCTURES, WORDLINES AND TRANSISTORS
- Publication number 20180138182
- Publication date May 17, 2018
- Micron Technology, Inc.
- Jaydeb Goswami
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING
- Publication number 20170345972
- Publication date Nov 30, 2017
- Micron Technology, Inc.
- Scott D. Schellhammer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MAN...
- Publication number 20170288089
- Publication date Oct 5, 2017
- Micron Technology, Inc.
- Zaiyuan Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND ME...
- Publication number 20170104126
- Publication date Apr 13, 2017
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Material Having a Compositionally-Graded Transition L...
- Publication number 20170047407
- Publication date Feb 16, 2017
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATI...
- Publication number 20160225948
- Publication date Aug 4, 2016
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENGINEERED SUBSTRATES FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYST...
- Publication number 20160155893
- Publication date Jun 2, 2016
- Micron Technology, Inc.
- Martin F. Schubert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Semiconductor Structure with Intermediate and Transitio...
- Publication number 20160126315
- Publication date May 5, 2016
- Infineon Technologies Americas Corp.
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID STATE LIGHTING DEVICES WITHOUT CONVERTER MATERIALS AND ASSOCI...
- Publication number 20160087144
- Publication date Mar 24, 2016
- Micron Technology, Inc.
- Zaiyuan Ren
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND ME...
- Publication number 20160027957
- Publication date Jan 28, 2016
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICES, SYSTEMS, AND METHODS RELATED TO REMOVING PARASITIC CONDUCT...
- Publication number 20150318388
- Publication date Nov 5, 2015
- Micron Technology, Inc.
- Martin F. Schubert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Based Semiconductor Structure
- Publication number 20150287792
- Publication date Oct 8, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure with Compositionally-Graded Transition Layer
- Publication number 20150187880
- Publication date Jul 2, 2015
- International Rectifier Corporation
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR GROWTH SUBSTRATES AND ASSOCIATED SYSTEMS AND METHODS...
- Publication number 20150155440
- Publication date Jun 4, 2015
- Micron Technology, Inc.
- Xiaolong Fang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Devices with Discontinuously Graded Transition Layer
- Publication number 20150108495
- Publication date Apr 23, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING
- Publication number 20150028347
- Publication date Jan 29, 2015
- Micron Technology, Inc.
- Scott D. Schellhammer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND ME...
- Publication number 20150004729
- Publication date Jan 1, 2015
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Semiconductor Structures With Compositionally-Grade...
- Publication number 20140353680
- Publication date Dec 4, 2014
- International Rectifier Corporation
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED ME...
- Publication number 20140319536
- Publication date Oct 30, 2014
- Micron Technology, Inc.
- Scott E. Sills
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATI...
- Publication number 20140246683
- Publication date Sep 4, 2014
- Micron Technology, Inc.
- Cem Basceri
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gallium Nitride Devices With Aluminum Nitride Intermediate Layer
- Publication number 20140131659
- Publication date May 15, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- C30 - CRYSTAL GROWTH
Information Patent Application
Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer
- Publication number 20140097446
- Publication date Apr 10, 2014
- INTERNATIONAL RECTIFIER CORPORATION
- T. Warren Weeks
- C30 - CRYSTAL GROWTH

Thomas Gehrke

Person

Patents Grantslast 30 patents

Light emitting diodes with n-polarity and associated methods of man...

Light emitting diodes with n-polarity and associated methods of man...

Light emitting diodes and associated methods of manufacturing

Engineered substrates for semiconductor devices and associated syst...

Semiconductor material having a compositionally-graded transition l...

Conductive structures, wordlines and transistors

Conductive structures, wordlines and transistors

Light emitting diodes and associated methods of manufacturing

Light emitting diodes with N-polarity and associated methods of man...

Solid state lighting devices with reduced crystal lattice dislocati...

Solid state lighting dies with quantum emitters and associated meth...

Solid state lighting devices without converter materials and associ...

Devices, systems, and methods related to removing parasitic conduct...

Light emitting devices with built-in chromaticity conversion and me...

Semiconductor structure with compositionally-graded transition layer

III-nitride based semiconductor structure

Gallium nitride devices with discontinuously graded transition layer

Semiconductor growth substrates and associated systems and methods...

Engineered substrates for semiconductor devices and associated syst...

Solid state lighting devices with reduced crystal lattice dislocati...

Light emitting devices with built-in chromaticity conversion and me...

Solid state lighting devices without converter materials and associ...

Devices, systems, and methods related to removing parasitic conduct...

Gallium nitride semiconductor structures with compositionally-grade...

Solid state lighting devices with cellular arrays and associated me...

Method for forming a light conversion material

Semiconductor growth substrates and associated systems and methods...

Gallium nitride devices with aluminum nitride intermediate layer

Gallium nitride devices with aluminum nitride alloy intermediate layer

Gallium nitride devices with gallium nitride alloy intermediate layer

Patents Applicationslast 30 patents

LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING

LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MAN...

LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MAN...

LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING

GALLIUM NITRIDE MATERIALS AND METHODS

GALLIUM NITRIDE MATERIALS AND METHODS

Gallium nitride materials and methods

Conductive Structures, Wordlines and Transistors

CONDUCTIVE STRUCTURES, WORDLINES AND TRANSISTORS

LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING

LIGHT EMITTING DIODES WITH N-POLARITY AND ASSOCIATED METHODS OF MAN...

LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND ME...

Semiconductor Material Having a Compositionally-Graded Transition L...

SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATI...

ENGINEERED SUBSTRATES FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYST...

III-Nitride Semiconductor Structure with Intermediate and Transitio...

SOLID STATE LIGHTING DEVICES WITHOUT CONVERTER MATERIALS AND ASSOCI...

LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND ME...

DEVICES, SYSTEMS, AND METHODS RELATED TO REMOVING PARASITIC CONDUCT...

III-Nitride Based Semiconductor Structure

Semiconductor Structure with Compositionally-Graded Transition Layer

SEMICONDUCTOR GROWTH SUBSTRATES AND ASSOCIATED SYSTEMS AND METHODS...

Gallium Nitride Devices with Discontinuously Graded Transition Layer

LIGHT EMITTING DIODES AND ASSOCIATED METHODS OF MANUFACTURING

LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND ME...

Gallium Nitride Semiconductor Structures With Compositionally-Grade...

SOLID STATE LIGHTING DEVICES WITH CELLULAR ARRAYS AND ASSOCIATED ME...

SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATI...

Gallium Nitride Devices With Aluminum Nitride Intermediate Layer

Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer