Yasuhiro Katsumata

Person

Chigasaki-shi, Kanagawa-ken, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 6,635,952
- Issue date Oct 21, 2003
- Kabushiki Kaisha Toshiba
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with solid phase diffusion source
- Patent number 5,903,027
- Issue date May 11, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having solid phase diffusion sources
- Patent number 5,898,203
- Issue date Apr 27, 1999
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having bipolar transistor with unique ratio of...
- Patent number 5,886,395
- Issue date Mar 23, 1999
- Kabushiki Kaisha Toshiba
- Yasuhiro Katsumata
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,766,965
- Issue date Jun 16, 1998
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET with solid phase diffusion source
- Patent number 5,698,881
- Issue date Dec 16, 1997
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,637,909
- Issue date Jun 10, 1997
- Kabushiki Kaisha Toshiba
- Hiroomi Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing method of semiconductor device comprising BiCMOS tran...
- Patent number 5,620,908
- Issue date Apr 15, 1997
- Kabushiki Kaisha Toshiba
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method thereof
- Patent number 5,604,374
- Issue date Feb 18, 1997
- Kabushiki Kaisha Toshiba
- Kazumi Inou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,510,647
- Issue date Apr 23, 1996
- Kabushiki Kaisha Toshiba
- Hiroomi Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 5,434,440
- Issue date Jul 18, 1995
- Kabushiki Kaisha Toshiba
- Takashi Yoshitomi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing semiconductor device
- Patent number 5,204,276
- Issue date Apr 20, 1993
- Kabushiki Kaisha Toshiba
- Hiroomi Nakajima
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing bipolar semiconductor device
- Patent number 4,782,030
- Issue date Nov 1, 1988
- Kabushiki Kaisha Toshiba
- Yasuhiro Katsumata
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device
- Publication number 20020140115
- Publication date Oct 3, 2002
- Kabushiki Kaisha Toshiba
- Kazumi Inoh
- H01 - BASIC ELECTRIC ELEMENTS

Yasuhiro Katsumata

Person

Patents Grantslast 30 patents

Semiconductor device

MOSFET with solid phase diffusion source

Semiconductor device having solid phase diffusion sources

Semiconductor device having bipolar transistor with unique ratio of...

Semiconductor device and method of manufacturing the same

MOSFET with solid phase diffusion source

Semiconductor device and method of manufacturing the same

Manufacturing method of semiconductor device comprising BiCMOS tran...

Semiconductor device and manufacturing method thereof

Semiconductor device and method of manufacturing the same

Semiconductor device and method of manufacturing the same

Method of manufacturing semiconductor device

Method of manufacturing bipolar semiconductor device

Patents Applicationslast 30 patents

Semiconductor device