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Angle modulation
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Industry
CPC
H03C3/00
This industry / category may be too specific. Please go to a parent level for more data
Parent Industries
H
ELECTRICITY
H03
Electronic circuits
H03C
MODULATION
Current Industry
H03C3/00
Angle modulation
Sub Industries
H03C3/005
Circuits for asymmetric modulation
H03C3/02
Details
H03C3/04
Means in or combined with modulating stage for reducing amplitude modulation
H03C3/06
Means for changing frequency deviation
H03C3/08
Modification of modulator to linearise modulation
H03C3/09
Modifications of modulator for regulating the mean frequency
H03C3/0908
using a phase locked loop
H03C3/0916
with frequency divider or counter in the loop
H03C3/0925
applying frequency modulation at the divider in the feedback loop
H03C3/0933
using fractional frequency division in the feedback loop of the phase locked loop
H03C3/0941
applying frequency modulation at more than one point in the loop
H03C3/095
applying frequency modulation to the loop in front of the voltage controlled oscillator
H03C3/0958
applying frequency modulation by varying the characteristics of the voltage controlled oscillator
H03C3/0966
modulating the reference clock
H03C3/0975
applying frequency modulation in the phase locked loop at components other than the divider, the voltage controlled oscillator or the reference clock
H03C3/0983
containing in the loop a mixer other than for phase detection
H03C3/0991
including calibration means or calibration methods
H03C3/10
by means of variable impedance
H03C3/12
by means of a variable reactive element
H03C3/14
simulated by circuit comprising active element with at least three electrodes
H03C3/145
by using semiconductor elements
H03C3/16
in which the active element simultaneously serves as the active element of an oscillator
H03C3/18
the element being a current-dependent inductor
H03C3/20
the element being a voltage-dependent capacitor
H03C3/22
the element being a semiconductor diode
H03C3/222
using bipolar transistors
H03C3/225
using field effect transistors
H03C3/227
using a combination of bipolar transistors and field effect transistors
H03C3/24
by means of a variable resistive element
H03C3/245
by using semiconductor elements
H03C3/26
comprising two elements controlled in push-pull by modulating signal
H03C3/28
using variable impedance driven mechanically or acoustically
H03C3/30
by means of transit-time tube
H03C3/32
the tube being a magnetron
H03C3/34
by deflection of electron beam in discharge tube
H03C3/36
by means of light-sensitive element
H03C3/38
by converting amplitude modulation to angle modulation
H03C3/40
using two signal paths the outputs of which have a predetermined phase difference and at least one output being amplitude-modulated
H03C3/403
using two quadrature frequency conversion stages in cascade
H03C3/406
using a feedback loop containing mixers or demodulators
H03C3/42
by means of electromechanical devices
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