Arrangements using a magnetic tunnel junction

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CPC
G11B5/3909

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GPHYSICS G11Information storage G11BINFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER G11B5/00Recording by magnetisation or demagnetisation of a record carrier Reproducing by magnetic means Record carriers therefor

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G11B5/3909Arrangements using a magnetic tunnel junction

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Warped magnetic tunnel junctions and bit-patterned media
- Patent number 12,170,162
- Issue date Dec 17, 2024
- Jannier Maximo Roiz-Wilson
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 12,170,104
- Issue date Dec 17, 2024
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device and method of forming same
- Patent number 12,154,608
- Issue date Nov 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Jhih Shen
- G11 - INFORMATION STORAGE
Information Patent Grant
Topological insulator based spin torque oscillator reader
- Patent number 12,125,508
- Issue date Oct 22, 2024
- Western Digital Technologies, Inc.
- Xiaoyong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Cap layer able to be reactive ion etched for RSB DFL read elements
- Patent number 12,094,499
- Issue date Sep 17, 2024
- Western Digital Technologies, Inc.
- Howard Gordon Zolla
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive stack with seed region and method of manufacturing...
- Patent number 12,089,418
- Issue date Sep 10, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Offset correction in a voltage controlled magnetoresistive sensor
- Patent number 12,046,263
- Issue date Jul 23, 2024
- Infineon Technologies AG
- Bernhard Endres
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 12,035,635
- Issue date Jul 9, 2024
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic tunnel junction device and method of forming same
- Patent number 11,990,167
- Issue date May 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Bo-Jhih Shen
- G01 - MEASURING TESTING
Information Patent Grant
Spin hall oscillator
- Patent number 11,990,868
- Issue date May 21, 2024
- Tokyo Institute of Technology
- Nam Hai Pham
- G01 - MEASURING TESTING
Information Patent Grant
Semiconductor structure integrated with magnetic tunneling junction
- Patent number 11,930,645
- Issue date Mar 12, 2024
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,927,649
- Issue date Mar 12, 2024
- TDK Corporation
- Shogo Yonemura
- G01 - MEASURING TESTING
Information Patent Grant
Spintronic devices with self-cooling function
- Patent number 11,925,120
- Issue date Mar 5, 2024
- Western Digital Technologies, Inc.
- Susumu Okamura
- G11 - INFORMATION STORAGE
Information Patent Grant
BiSbX (012) layers having increased operating temperatures for SOT...
- Patent number 11,908,496
- Issue date Feb 20, 2024
- Western Digital Technologies, Inc.
- Quang Le
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive bias control for magnetic recording head
- Patent number 11,887,635
- Issue date Jan 30, 2024
- Headway Technologies, Inc.
- Glen Garfunkel
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,871,681
- Issue date Jan 9, 2024
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Non-local spin valve sensor for high linear density
- Patent number 11,862,208
- Issue date Jan 2, 2024
- Seagate Technology LLC
- Mark Thomas Kief
- G11 - INFORMATION STORAGE
Information Patent Grant
STT-SOT hybrid magnetoresistive element and manufacture thereof
- Patent number 11,854,589
- Issue date Dec 26, 2023
- Yimin Guo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reader noise reduction using spin hall effects
- Patent number 11,804,242
- Issue date Oct 31, 2023
- Headway Technologies, Inc.
- Wenyu Chen
- G11 - INFORMATION STORAGE
Information Patent Grant
Electrodeposition of thermally stable alloys
- Patent number 11,798,583
- Issue date Oct 24, 2023
- Seagate Technology LLC
- Jie Gong
- C25 - ELECTROLYTIC OR ELECTROPHORETIC PROCESSES APPARATUS THEREFOR
Information Patent Grant
MTJ device performance by adding stress modulation layer to mtj dev...
- Patent number 11,785,864
- Issue date Oct 10, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd
- Jesmin Haq
- G11 - INFORMATION STORAGE
Information Patent Grant
Topological insulator based spin torque oscillator reader
- Patent number 11,783,853
- Issue date Oct 10, 2023
- Western Digital Technologies, Inc.
- Xiaoyong Liu
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetic elements of amorphous based dual free layer structures and...
- Patent number 11,776,725
- Issue date Oct 3, 2023
- Western Digital Technologies, Inc.
- Zhitao Diao
- G11 - INFORMATION STORAGE
Information Patent Grant
Storage element and storage apparatus
- Patent number 11,776,605
- Issue date Oct 3, 2023
- Sony Group Corporation
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element
- Patent number 11,763,841
- Issue date Sep 19, 2023
- TDK Corporation
- Tomoyuki Sasaki
- G11 - INFORMATION STORAGE
Information Patent Grant
Ferrimagnetic Heusler compounds with high spin polarization
- Patent number 11,756,578
- Issue date Sep 12, 2023
- Samsung Electronics Co., Ltd.
- Jaewoo Jeong
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive effect element
- Patent number 11,728,082
- Issue date Aug 15, 2023
- TDK Corporation
- Tsuyoshi Suzuki
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistive stack with seed region and method of manufacturing...
- Patent number 11,690,229
- Issue date Jun 27, 2023
- EVERSPIN TECHNOLOGIES, INC.
- Jijun Sun
- G11 - INFORMATION STORAGE
Information Patent Grant
Magnetoresistance effect element including a crystallized co heusle...
- Patent number 11,621,392
- Issue date Apr 4, 2023
- TDK Corporation
- Shinto Ichikawa
- G11 - INFORMATION STORAGE
Information Patent Grant
Semiconductor structure integrated with magnetic tunneling junction
- Patent number 11,600,661
- Issue date Mar 7, 2023
- Taiwan Semiconductor Manufacturing Company Ltd.
- Alexander Kalnitsky
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
Highly Textured Buffer Layer to Grow YBiPt (110) For Spintronic App...
- Publication number 20240420733
- Publication date Dec 19, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
DUAL FREE LAYER READ HEAD HAVING RECESSED SIDEWALL INSULATOR LAYER...
- Publication number 20240404552
- Publication date Dec 5, 2024
- Western Digital Technologies, Inc.
- Chih-Ching Hu
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT
- Publication number 20240395283
- Publication date Nov 28, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Rie MATSUMOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETORESISTIVE STACK WITH SEED REGION AND METHOD OF MANUFACTURING...
- Publication number 20240397731
- Publication date Nov 28, 2024
- EVERSPIN TECHNOLOGIES, INC.
- Jijun SUN
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) IN...
- Publication number 20240381780
- Publication date Nov 14, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Huanlong Liu
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR FABRICATING SEMICONDUCTOR DEVICE
- Publication number 20240341102
- Publication date Oct 10, 2024
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20240334839
- Publication date Oct 3, 2024
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
Tunneling Magnetoresistance Device With Magnetically Soft High Mome...
- Publication number 20240233999
- Publication date Jul 11, 2024
- HEADWAY TECHNOLOGIES, INC.
- Hui-Chuan Wang
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...
- Publication number 20240107893
- Publication date Mar 28, 2024
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
Adaptive Bias Control for Magnetic Recording Head
- Publication number 20240071414
- Publication date Feb 29, 2024
- HEADWAY TECHNOLOGIES, INC.
- Glen Garfunkel
- G11 - INFORMATION STORAGE
Information Patent Application
Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler A...
- Publication number 20240032437
- Publication date Jan 25, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
Magnetic Tunnel Junction Device and Method of Forming Same
- Publication number 20240021230
- Publication date Jan 18, 2024
- Taiwan Semiconductor Manufacturing Co., Ltd.
- Bo-Jhih Shen
- G11 - INFORMATION STORAGE
Information Patent Application
Reader Noise Reduction Using Spin Hall Effects
- Publication number 20240013805
- Publication date Jan 11, 2024
- HEADWAY TECHNOLOGIES, INC.
- Wenyu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
Highly Textured 001 BiSb And Materials for Making Same
- Publication number 20240006109
- Publication date Jan 4, 2024
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
STORAGE ELEMENT AND STORAGE APPARATUS
- Publication number 20240005975
- Publication date Jan 4, 2024
- SONY GROUP CORPORATION
- Yutaka Higo
- G11 - INFORMATION STORAGE
Information Patent Application
Topological Insulator Based Spin Torque Oscillator Reader
- Publication number 20230419990
- Publication date Dec 28, 2023
- Western Digital Technologies, Inc.
- Xiaoyong LIU
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230386511
- Publication date Nov 30, 2023
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MTJ DEVICE PERFORMANCE BY ADDING STRESS MODULATION LAYER TO MTJ DEV...
- Publication number 20230371398
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jesmin Haq
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, A...
- Publication number 20230371277
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR STRUCTURE INTEGRATED WITH MAGNETIC TUNNELING JUNCTION
- Publication number 20230225136
- Publication date Jul 13, 2023
- Taiwan Semiconductor Manufacturing company Ltd.
- ALEXANDER KALNITSKY
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230225222
- Publication date Jul 13, 2023
- TDK Corporation
- Tomoyuki SASAKI
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTANCE EFFECT ELEMENT
- Publication number 20230210016
- Publication date Jun 29, 2023
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
BiSbX (012) Layers Having Increased Operating Temperatures For SOT...
- Publication number 20230121375
- Publication date Apr 20, 2023
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
TUNNELING DEVICE HAVING INTERMEDIATE LAYER USING NATURAL OXIDE FILM...
- Publication number 20230112348
- Publication date Apr 13, 2023
- Korea University Research and Business Foundation
- Hyun Yong YU
- G11 - INFORMATION STORAGE
Information Patent Application
Reader Noise Reduction Using Spin Hall Effects
- Publication number 20230087646
- Publication date Mar 23, 2023
- HEADWAY TECHNOLOGIES, INC.
- Wenyu Chen
- G11 - INFORMATION STORAGE
Information Patent Application
SPINTRONIC DEVICES WITH SELF-COOLING FUNCTION
- Publication number 20230030248
- Publication date Feb 2, 2023
- Western Digital Technologies, Inc.
- Susumu OKAMURA
- G11 - INFORMATION STORAGE
Information Patent Application
BiSb Topological Insulator with Seed Layer or Interlayer to Prevent...
- Publication number 20230027086
- Publication date Jan 26, 2023
- Western Digital Technologies, Inc.
- Quang LE
- G11 - INFORMATION STORAGE
Information Patent Application
MAGNETORESISTIVE EFFECT ELEMENT CONTAINING TWO NON-MAGNETIC LAYERS...
- Publication number 20230009284
- Publication date Jan 12, 2023
- TDK Corporation
- Shinto ICHIKAWA
- G11 - INFORMATION STORAGE
Information Patent Application
MTJ Device Performance by Adding Stress Modulation Layer to MTJ Dev...
- Publication number 20220384713
- Publication date Dec 1, 2022
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jesmin Haq
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAGNETIC ELEMENTS OF AMORPHOUS BASED DUAL FREE LAYER STRUCTURES AND...
- Publication number 20220367099
- Publication date Nov 17, 2022
- Western Digital Technologies, Inc.
- Zhitao DIAO
- H01 - BASIC ELECTRIC ELEMENTS

Arrangements using a magnetic tunnel junction

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Warped magnetic tunnel junctions and bit-patterned media

Storage element and storage apparatus

Magnetic tunnel junction device and method of forming same

Topological insulator based spin torque oscillator reader

Cap layer able to be reactive ion etched for RSB DFL read elements

Magnetoresistive stack with seed region and method of manufacturing...

Offset correction in a voltage controlled magnetoresistive sensor

Magnetoresistance effect element

Magnetic tunnel junction device and method of forming same

Spin hall oscillator

Semiconductor structure integrated with magnetic tunneling junction

Magnetoresistance effect element

Spintronic devices with self-cooling function

BiSbX (012) layers having increased operating temperatures for SOT...

Adaptive bias control for magnetic recording head

Magnetoresistance effect element

Non-local spin valve sensor for high linear density

STT-SOT hybrid magnetoresistive element and manufacture thereof

Reader noise reduction using spin hall effects

Electrodeposition of thermally stable alloys

MTJ device performance by adding stress modulation layer to mtj dev...

Topological insulator based spin torque oscillator reader

Magnetic elements of amorphous based dual free layer structures and...

Storage element and storage apparatus

Magnetoresistance effect element

Ferrimagnetic Heusler compounds with high spin polarization

Magnetoresistive effect element

Magnetoresistive stack with seed region and method of manufacturing...

Magnetoresistance effect element including a crystallized co heusle...

Semiconductor structure integrated with magnetic tunneling junction

Patents Applicationslast 30 patents

Highly Textured Buffer Layer to Grow YBiPt (110) For Spintronic App...

DUAL FREE LAYER READ HEAD HAVING RECESSED SIDEWALL INSULATOR LAYER...

MAGNETIC STORAGE DEVICE PROVIDED WITH MAGNETORESISTIVE ELEMENT

MAGNETORESISTIVE STACK WITH SEED REGION AND METHOD OF MANUFACTURING...

METHOD FOR FORMING A PERPENDICULAR SPIN TORQUE OSCILLATOR (PSTO) IN...

METHOD FOR FABRICATING SEMICONDUCTOR DEVICE

MAGNETORESISTANCE EFFECT ELEMENT

Tunneling Magnetoresistance Device With Magnetically Soft High Mome...

Magnetoresistive Devices Comprising A Synthetic Antiferromagnetic C...

Adaptive Bias Control for Magnetic Recording Head

Buffer Layers, Interlayers, and Barrier Layers Comprising Heusler A...

Magnetic Tunnel Junction Device and Method of Forming Same

Reader Noise Reduction Using Spin Hall Effects

Highly Textured 001 BiSb And Materials for Making Same

STORAGE ELEMENT AND STORAGE APPARATUS

Topological Insulator Based Spin Torque Oscillator Reader

MAGNETORESISTANCE EFFECT ELEMENT

MTJ DEVICE PERFORMANCE BY ADDING STRESS MODULATION LAYER TO MTJ DEV...

SEMICONDUCTOR DEVICE, METHOD OF FABRICATING SEMICONDUCTOR DEVICE, A...

SEMICONDUCTOR STRUCTURE INTEGRATED WITH MAGNETIC TUNNELING JUNCTION

MAGNETORESISTANCE EFFECT ELEMENT

MAGNETORESISTANCE EFFECT ELEMENT

BiSbX (012) Layers Having Increased Operating Temperatures For SOT...

TUNNELING DEVICE HAVING INTERMEDIATE LAYER USING NATURAL OXIDE FILM...

Reader Noise Reduction Using Spin Hall Effects

SPINTRONIC DEVICES WITH SELF-COOLING FUNCTION

BiSb Topological Insulator with Seed Layer or Interlayer to Prevent...

MAGNETORESISTIVE EFFECT ELEMENT CONTAINING TWO NON-MAGNETIC LAYERS...

MTJ Device Performance by Adding Stress Modulation Layer to MTJ Dev...

MAGNETIC ELEMENTS OF AMORPHOUS BASED DUAL FREE LAYER STRUCTURES AND...