by liquid phase epitaxy

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CPC
H01F41/28

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HELECTRICITY H01Electric elements H01FMAGNETS INDUCTANCES TRANSFORMERS SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES H01F41/00Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties

Current Industry

H01F41/28by liquid phase epitaxy

Industries

Patents Grantslast 30 patents

Information Patent Grant
Magnetic garnet material, faraday rotator, optical device, bismuth-...
- Patent number 7,517,406
- Issue date Apr 14, 2009
- TDK Corporation
- Atsushi Ohido
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic garnet material, faraday rotator, optical device, bismuth-...
- Patent number 7,333,261
- Issue date Feb 19, 2008
- TDK Corporation
- Atsushi Ohido
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic garnet material, faraday rotator, optical device, bismuth-...
- Patent number 7,133,189
- Issue date Nov 7, 2006
- TDK Corporation
- Atsushi Ohido
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetic garnet single-crystal film and method of producing the sam...
- Patent number 6,875,270
- Issue date Apr 5, 2005
- TDK Corporation
- Atsushi Ohido
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Material for bismuth substituted garnet thick film and a manufactur...
- Patent number 6,542,299
- Issue date Apr 1, 2003
- NEC TOKIN Corporation
- Tadakuni Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Magnetostatic wave device
- Patent number 6,426,156
- Issue date Jul 30, 2002
- Murata Manufacturing Co., Ltd.
- Masaru Fujino
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Faraday rotator and magneto-optical element using the same
- Patent number 6,351,331
- Issue date Feb 26, 2002
- Shin-Etsu Chemical Co., Ltd.
- Satoru Fukuda
- G02 - OPTICS
Information Patent Grant
Low magnet-saturation bismuth-substituted rare-earth iron garnet si...
- Patent number 6,031,654
- Issue date Feb 29, 2000
- Mitsubishi Gas Chemical Company, Inc.
- Kiyonari Hiramatsu
- G02 - OPTICS
Information Patent Grant
Magnetostatic wave device
- Patent number 5,985,472
- Issue date Nov 16, 1999
- Murata Manufacturing Co., Ltd.
- Mikio Geho
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Bismuth-substituted rare earth iron garnet single crystal film
- Patent number 5,925,474
- Issue date Jul 20, 1999
- Mitsubishi Gas Chemical Company, Inc.
- Kazushi Shirai
- G02 - OPTICS
Information Patent Grant
Magnetostatic wave device
- Patent number 5,871,856
- Issue date Feb 16, 1999
- Murata Manufacturing Co., Ltd.
- Makoto Kumatoriya
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Magnetostatic wave device with indium/tin in the magnetic garnet
- Patent number 5,801,604
- Issue date Sep 1, 1998
- Murata Manufacturing Co., Ltd.
- Masaru Fujino
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Oxide garnet single crystal
- Patent number 5,616,176
- Issue date Apr 1, 1997
- Shin-Etsu Chemical Co., Ltd.
- Satoru Fukuda
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oxide garnet single crystal
- Patent number 5,277,845
- Issue date Jan 11, 1994
- Shin-Etsu Chemical Co., Ltd.
- Toshihiko Ryuo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Oxide garnet single crystal
- Patent number 5,186,866
- Issue date Feb 16, 1993
- Shin-Etsu Chemical Co., Ltd.
- Toshihiko Ryuo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing a layer having a high magnetic anisotropy in...
- Patent number 4,711,694
- Issue date Dec 8, 1987
- Commissariat a l'Energie Atomique
- Thierry Capra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Garnet-type magnetic material high faraday rotation magnetic film c...
- Patent number 4,698,281
- Issue date Oct 6, 1987
- Commissariat a l'Energie Atomique
- Marie-Francoise Armand
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Intermediary layers for epitaxial hexagonal ferrite films
- Patent number 4,624,901
- Issue date Nov 25, 1986
- Rockwell International Corporation
- Howard L. Glass
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for the production by catalysis of a layer having a high ma...
- Patent number 4,624,858
- Issue date Nov 25, 1986
- Commissariat a l'Energie Atomique
- Thierry Capra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Garnet epitaxial films with high Curie temperatures
- Patent number 4,468,438
- Issue date Aug 28, 1984
- AT&T Bell Laboratories
- Stuart L. Blank
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ion-implanted bubble device
- Patent number 4,462,087
- Issue date Jul 24, 1984
- Fujitsu Limited
- Yoshio Satoh
- B41 - PRINTING LINING MACHINES TYPEWRITERS STAMPS
Information Patent Grant
Garnet film for magnetic bubble element
- Patent number 4,397,912
- Issue date Aug 9, 1983
- Hitachi, Ltd.
- Norio Ohta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for removing a liquid phase epitaxial layer from a wafer
- Patent number 4,372,808
- Issue date Feb 8, 1983
- Intel Magnetics, Inc.
- Baylor B. Triplett
- C30 - CRYSTAL GROWTH
Information Patent Grant
Magnetic devices and method of manufacture
- Patent number 4,360,893
- Issue date Nov 23, 1982
- Bell Telephone Laboratories, Incorporated
- Andrew H. Bobeck
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process for regulating to desired values the dimensions of the bubb...
- Patent number 4,322,454
- Issue date Mar 30, 1982
- Commissariat a l'Energie Atomique
- Didier Challeton
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial growth of magnetic memory film on implanted substrate
- Patent number 4,290,843
- Issue date Sep 22, 1981
- Texas Instruments Incorporated
- Ralph Korenstein
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for controlling the resonance frequency of yttrium iron garn...
- Patent number 4,273,610
- Issue date Jun 16, 1981
- The United States of America as represented by the Secretary of the Air Force
- Howard L. Glass
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for preparing temperature-stabilized low-loss ferrite films
- Patent number 4,269,651
- Issue date May 26, 1981
- Rockwell International Corporation
- Howard L. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Temperature-stabilized low-loss ferrite films
- Patent number 4,263,374
- Issue date Apr 21, 1981
- Rockwell International Corporation
- Howard L. Glass
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self biased ferrite resonators
- Patent number 4,243,697
- Issue date Jan 6, 1981
- The United States of America as represented by the Secretary of the Air Force
- Howard L. Glass
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
SINGLE CRYSTAL YIG NANOFILM FABRICATED BY A METAL ORGANIC DECOMPOSI...
- Publication number 20240003042
- Publication date Jan 4, 2024
- Vida Products
- Allen Sweet
- C30 - CRYSTAL GROWTH
Information Patent Application
Magnetic garnet material, faraday rotator, optical device, bismuth-...
- Publication number 20080112046
- Publication date May 15, 2008
- TDK Corporation
- Atsushi Ohido
- C30 - CRYSTAL GROWTH
Information Patent Application
Magnetic garnet material, faraday rotator, optical device, bismuth-...
- Publication number 20060187546
- Publication date Aug 24, 2006
- TDK Corporation
- Atsushi Ohido
- C30 - CRYSTAL GROWTH
Information Patent Application
Magnetic garnet single crystal film formation substrate, optical el...
- Publication number 20060112873
- Publication date Jun 1, 2006
- TDK Corporation
- Kiyoshi Uchida
- C30 - CRYSTAL GROWTH
Information Patent Application
Magnetic garnet material, faraday rotator, optical device, bismuth-...
- Publication number 20030219261
- Publication date Nov 27, 2003
- TDK Corporation
- Atsushi Ohido
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing a microwave device
- Publication number 20020013053
- Publication date Jan 31, 2002
- Murata Manufacturing Co., Ltd.
- Takashi Takagi
- C30 - CRYSTAL GROWTH
Information Patent Application
Material for bismuth substituted garnet thick film and a manufactur...
- Publication number 20010052828
- Publication date Dec 20, 2001
- TOKIN CORPORATION
- Tadakuni Sato
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Magnetic garnet single-crystal film and method of producing the sam...
- Publication number 20010023932
- Publication date Sep 27, 2001
- TDK CORPORATION
- Atsushi Ohido
- C30 - CRYSTAL GROWTH
Information Patent Application
Low lead content magnetic garnet single crystal film, method for ma...
- Publication number 20010006038
- Publication date Jul 5, 2001
- Murata Manufacturing Co., Ltd.
- Masaru Fujino
- H01 - BASIC ELECTRIC ELEMENTS

by liquid phase epitaxy

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Magnetic garnet material, faraday rotator, optical device, bismuth-...

Magnetic garnet material, faraday rotator, optical device, bismuth-...

Magnetic garnet material, faraday rotator, optical device, bismuth-...

Magnetic garnet single-crystal film and method of producing the sam...

Material for bismuth substituted garnet thick film and a manufactur...

Magnetostatic wave device

Faraday rotator and magneto-optical element using the same

Low magnet-saturation bismuth-substituted rare-earth iron garnet si...

Magnetostatic wave device

Bismuth-substituted rare earth iron garnet single crystal film

Magnetostatic wave device

Magnetostatic wave device with indium/tin in the magnetic garnet

Oxide garnet single crystal

Oxide garnet single crystal

Oxide garnet single crystal

Process for producing a layer having a high magnetic anisotropy in...

Garnet-type magnetic material high faraday rotation magnetic film c...

Intermediary layers for epitaxial hexagonal ferrite films

Process for the production by catalysis of a layer having a high ma...

Garnet epitaxial films with high Curie temperatures

Ion-implanted bubble device

Garnet film for magnetic bubble element

Process for removing a liquid phase epitaxial layer from a wafer

Magnetic devices and method of manufacture

Process for regulating to desired values the dimensions of the bubb...

Epitaxial growth of magnetic memory film on implanted substrate

Method for controlling the resonance frequency of yttrium iron garn...

Process for preparing temperature-stabilized low-loss ferrite films

Temperature-stabilized low-loss ferrite films

Self biased ferrite resonators

Patents Applicationslast 30 patents

SINGLE CRYSTAL YIG NANOFILM FABRICATED BY A METAL ORGANIC DECOMPOSI...

Magnetic garnet material, faraday rotator, optical device, bismuth-...

Magnetic garnet material, faraday rotator, optical device, bismuth-...

Magnetic garnet single crystal film formation substrate, optical el...

Magnetic garnet material, faraday rotator, optical device, bismuth-...

Method of producing a microwave device

Material for bismuth substituted garnet thick film and a manufactur...

Magnetic garnet single-crystal film and method of producing the sam...

Low lead content magnetic garnet single crystal film, method for ma...