CRYSTAL GROWTH

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C30BSINGLE-CRYSTAL-GROWTH UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL REFINING BY ZONE-MELTING OF MATERIAL PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH D...

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Patterned diamond and method of making same
- Patent number 12,167,781
- Issue date Dec 17, 2024
- CAPSOUL DIAMOND LTD.
- Nirit Damri
- A44 - HABERDASHERY JEWELLERY
Information Patent Grant
Growth of A-B crystals without crystal lattice curvature
- Patent number 12,168,839
- Issue date Dec 17, 2024
- Freiberger Compound Materials GMBH
- Berndt Weinert
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal growth method and a substrate for a semiconductor device
- Patent number 12,170,200
- Issue date Dec 17, 2024
- Kyocera Corporation
- Takehiro Nishimura
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication methods
- Patent number 12,171,148
- Issue date Dec 17, 2024
- Microsoft Technology Licensing, LLC
- Kevin Van Hoogdalem
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method for producing an α- or β-gallium oxide crystal by bring an a...
- Patent number 12,163,252
- Issue date Dec 10, 2024
- NGK Insulators, Ltd.
- Jun Yoshikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ultrawide bandgap semiconductor devices including magnesium germani...
- Patent number 12,166,085
- Issue date Dec 10, 2024
- SILANNA UV TECHNOLOGIES PTE LTD
- Petar Atanackovic
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer
- Patent number 12,166,087
- Issue date Dec 10, 2024
- Resonac Corporation
- Naoto Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ground substrate and method for producing same
- Patent number 12,163,249
- Issue date Dec 10, 2024
- NGK Insulators, Ltd.
- Morimichi Watanabe
- C30 - CRYSTAL GROWTH
Information Patent Grant
Single crystal manufacturing apparatus and method
- Patent number 12,163,246
- Issue date Dec 10, 2024
- Novel Crystal Technology, Inc.
- Kimiyoshi Koshi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Temperature-controlled chemical delivery system and reactor system...
- Patent number 12,163,225
- Issue date Dec 10, 2024
- ASM IP Holding B.V.
- Carl Louis White
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing silicon ingot single crystal
- Patent number 12,163,247
- Issue date Dec 10, 2024
- GlobalWafers Co., Ltd.
- Kazuo Nakajima
- C30 - CRYSTAL GROWTH
Information Patent Grant
Quantitative textured polycrystalline coatings
- Patent number 12,163,248
- Issue date Dec 10, 2024
- Kennametal Inc.
- Zhenyu Liu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Control of basal plane dislocations in large aluminum nitride crystals
- Patent number 12,163,250
- Issue date Dec 10, 2024
- Crystal IS, Inc.
- Robert T. Bondokov
- C01 - INORGANIC CHEMISTRY
Information Patent Grant
Method for manufacturing a composite structure comprising a thin la...
- Patent number 12,159,781
- Issue date Dec 3, 2024
- Soitec
- Hugo Biard
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Inhibiting dripped granular dopant from adhering to a growing silic...
- Patent number 12,157,953
- Issue date Dec 3, 2024
- Sumco Corporation
- Norihito Fukatsu
- C30 - CRYSTAL GROWTH
Information Patent Grant
Crystal pulling systems having a cover member for covering the sili...
- Patent number 12,157,954
- Issue date Dec 3, 2024
- GlobalWafers Co., Ltd.
- Paolo Tosi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for simultaneously manufacturing more than one single crysta...
- Patent number 12,157,955
- Issue date Dec 3, 2024
- SICRYSTAL GMBH
- Erwin Schmitt
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for producing wafers with modification lines of defined orie...
- Patent number 12,159,805
- Issue date Dec 3, 2024
- Siltectra GmbH
- Marko Swoboda
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Silicon carbide composite wafer and manufacturing method thereof
- Patent number 12,159,855
- Issue date Dec 3, 2024
- HONG CHUANG APPLIED TECHNOLOGY CO., LTD
- Yan-Kai Zeng
- C30 - CRYSTAL GROWTH
Information Patent Grant
Optimized heteroepitaxial growth of semiconductors
- Patent number 12,157,956
- Issue date Dec 3, 2024
- United States of America as represented by the Secretary of the Air Force
- Vladimir Tassev
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods and devices for growing scintillation crystals with multi-c...
- Patent number 12,152,315
- Issue date Nov 26, 2024
- MEISHAN BOYA ADVANCED MATERIALS CO., LTD.
- Yu Wang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Methods for determining suitability of silicon substrates for epitaxy
- Patent number 12,152,314
- Issue date Nov 26, 2024
- GlobalWafers Co., Ltd.
- Shan-Hui Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for polishing single-crystal diamond
- Patent number 12,151,337
- Issue date Nov 26, 2024
- Huaqiao University
- Jing Lu
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Passivation of nonlinear optical crystals
- Patent number 12,152,316
- Issue date Nov 26, 2024
- KLA Corporation
- Yung-Ho Alex Chuang
- C30 - CRYSTAL GROWTH
Information Patent Grant
Use of quartz plates during growth of single crystal silicon ingots
- Patent number 12,146,236
- Issue date Nov 19, 2024
- GlobalWafers Co., Ltd.
- Matteo Pannocchia
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of obtaining a smooth surface with epitaxial lateral overgrowth
- Patent number 12,146,237
- Issue date Nov 19, 2024
- The Regents of the University of California
- Takeshi Kamikawa
- C30 - CRYSTAL GROWTH
Information Patent Grant
GA-based van der Waals room-temperature ferromagnetic crystal mater...
- Patent number 12,145,842
- Issue date Nov 19, 2024
- Huazhong University of Science & Technology
- Haixin Chang
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Non-polar III-nitride binary and ternary materials, method for obta...
- Patent number 12,148,612
- Issue date Nov 19, 2024
- Mengyao Xie
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of growing bulk single crystal diamond on a substrate in a p...
- Patent number 12,139,812
- Issue date Nov 12, 2024
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Grant
SiC wafer and manufacturing method for SiC wafer
- Patent number 12,139,813
- Issue date Nov 12, 2024
- Toyota Tsusho Corporation
- Masatake Nagaya
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
Methods of Growing Co-Doped Cerium Calcium Lutetium-Yttrium Oxyorth...
- Publication number 20240417885
- Publication date Dec 19, 2024
- Pacific Innovations Pte. Ltd.
- Faouzi Zerrouk
- C30 - CRYSTAL GROWTH
Information Patent Application
FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY
- Publication number 20240420955
- Publication date Dec 19, 2024
- Future Semiconductor Business, Inc
- Kyusang Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR PRODUCING BETA-GA2O3/BETA-GA2O3 MULTILAYER BODY
- Publication number 20240417881
- Publication date Dec 19, 2024
- Mitsubishi Gas Chemical Company, Inc.
- Hideyuki SEKIWA
- C30 - CRYSTAL GROWTH
Information Patent Application
SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...
- Publication number 20240417882
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Yoshihiro KUBOTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CVD SINGLE CRYSTAL DIAMOND
- Publication number 20240417884
- Publication date Dec 19, 2024
- ELEMENT SIX TECHNOLOGIES LIMITED
- Benjamin Simon TRUSCOTT
- C30 - CRYSTAL GROWTH
Information Patent Application
LITHIUM NICKEL MANGANESE COBALT OXIDE HIGH-NICKEL SINGLE-CRYSTAL PO...
- Publication number 20240417275
- Publication date Dec 19, 2024
- GEM (WUXI) ENERGY MATERIALS CO., LTD.
- Kaihua XU
- C01 - INORGANIC CHEMISTRY
Information Patent Application
UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE, AN...
- Publication number 20240417883
- Publication date Dec 19, 2024
- Shin-Etsu Chemical Co., Ltd.
- Hitoshi NOGUCHI
- C30 - CRYSTAL GROWTH
Information Patent Application
PEROVSKITE OXIDE THIN FILM USING A SELECTIVE A-SITE ATOMIC GRADIENT...
- Publication number 20240417273
- Publication date Dec 19, 2024
- POSTECH Research and Business Development Foundation
- Daesu LEE
- C01 - INORGANIC CHEMISTRY
Information Patent Application
SEED CRYSTAL LIFTING DEVICE AND SINGLE CRYSTAL FURNACE
- Publication number 20240410076
- Publication date Dec 12, 2024
- ZHEJIANG JINGSHENG M & E CO., LTD
- Jianwei CAO
- C30 - CRYSTAL GROWTH
Information Patent Application
GAN SUBSTRATE
- Publication number 20240413209
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD AND APPARATUS FOR PRODUCING NITROGEN COMPOUND
- Publication number 20240410077
- Publication date Dec 12, 2024
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Xuelun WANG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR
- Publication number 20240410082
- Publication date Dec 12, 2024
- Nippon Telegraph and Telephone Corporation
- Ai Ikeda
- C30 - CRYSTAL GROWTH
Information Patent Application
VOID DEFECT FORMING METHOD, DEVICE, AND DIAMOND MANUFACTURING METHOD
- Publication number 20240410083
- Publication date Dec 12, 2024
- KYOTO UNIVERSITY
- Norikazu MIZUOCHI
- C01 - INORGANIC CHEMISTRY
Information Patent Application
IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...
- Publication number 20240410078
- Publication date Dec 12, 2024
- Applied Materials, Inc.
- Zhepeng CONG
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
3D structured inorganic nanoscale product and printing method and a...
- Publication number 20240410079
- Publication date Dec 12, 2024
- Tsinghua University
- Hao ZHANG
- B82 - NANO-TECHNOLOGY
Information Patent Application
Process for Manufacturing Single-Crystal Fiber
- Publication number 20240410081
- Publication date Dec 12, 2024
- Nippon Telegraph and Telephone Corporation
- Shigeo Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...
- Publication number 20240413208
- Publication date Dec 12, 2024
- Rohm Co., Ltd.
- Takuji MAEKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR WAFER TREATMENT
- Publication number 20240412972
- Publication date Dec 12, 2024
- Hua Hsu Silicon Materials Co., Ltd.
- Chiao-Yang Cheng
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR GROWTH OF ATOMIC LAYER TRANSITION METAL DICHALCOGENIDES
- Publication number 20240410080
- Publication date Dec 12, 2024
- Honda Motor Co., Ltd.
- Xufan LI
- C30 - CRYSTAL GROWTH
Information Patent Application
GAN EPITAXIAL SUBSTRATE
- Publication number 20240413210
- Publication date Dec 12, 2024
- MITSUBISHI CHEMICAL CORPORATION
- Kenji ISO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR MANUFACTURING CRYSTALLIZED LAMINATED STRUCTURE
- Publication number 20240401224
- Publication date Dec 5, 2024
- Junji Tominaga
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
FINS ON CRUCIBLE OR GUSSETS ON REFRACTORY LINING FOR FACILITATING E...
- Publication number 20240401227
- Publication date Dec 5, 2024
- Siemens Medical Solutions USA, Inc.
- Peter Cohen
- C30 - CRYSTAL GROWTH
Information Patent Application
COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF
- Publication number 20240401229
- Publication date Dec 5, 2024
- Rohm Co., Ltd.
- Keiju SATO
- C30 - CRYSTAL GROWTH
Information Patent Application
GROWTH METHOD AND STRUCTURE OF LED EPITAXY
- Publication number 20240405159
- Publication date Dec 5, 2024
- Focus Lightings Tech (Suqian) Co., Ltd.
- Guochang LI
- C30 - CRYSTAL GROWTH
Information Patent Application
DISCOVERY OF DOUBLE HELIX AND IMPACT ON NANOSCALE TO MESOSCALE CRYS...
- Publication number 20240401223
- Publication date Dec 5, 2024
- North Carolina State University
- Jagdish Narayan
- C30 - CRYSTAL GROWTH
Information Patent Application
DIAMONDS AND HETERO-EPITAXIAL METHOD OF FORMING DIAMONDS
- Publication number 20240401232
- Publication date Dec 5, 2024
- Advanced Diamond Holdings, LLC
- John P. Ciraldo
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING A SINGLE CRYSTAL FROM SILICON
- Publication number 20240401233
- Publication date Dec 5, 2024
- Siltronic AG
- Walter HAECKL
- C30 - CRYSTAL GROWTH
Information Patent Application
ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE
- Publication number 20240401236
- Publication date Dec 5, 2024
- NGK Insulators, Ltd.
- Hiroharu KOBAYASHI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PREPARING DIRECTIONALLY SOLIDIFIED TiAl ALLOY
- Publication number 20240401237
- Publication date Dec 5, 2024
- UNIVERSITY OF SCIENCE AND TECHNOLOGY BEIJING
- Yongfeng Liang
- C30 - CRYSTAL GROWTH
Information Patent Application
LITHIUM ION SECONDARY BATTERY AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20240405258
- Publication date Dec 5, 2024
- Semiconductor Energy Laboratory Co., Ltd.
- Tomoya FUTAMURA
- C30 - CRYSTAL GROWTH

CRYSTAL GROWTH

Industry

Parent Industries

Current Industry

Sub Industries

Patents Grantslast 30 patents

Patterned diamond and method of making same

Growth of A-B crystals without crystal lattice curvature

Crystal growth method and a substrate for a semiconductor device

Fabrication methods

Method for producing an α- or β-gallium oxide crystal by bring an a...

Ultrawide bandgap semiconductor devices including magnesium germani...

SiC epitaxial wafer and method for manufacturing SIC epitaxial wafer

Ground substrate and method for producing same

Single crystal manufacturing apparatus and method

Temperature-controlled chemical delivery system and reactor system...

Method for producing silicon ingot single crystal

Quantitative textured polycrystalline coatings

Control of basal plane dislocations in large aluminum nitride crystals

Method for manufacturing a composite structure comprising a thin la...

Inhibiting dripped granular dopant from adhering to a growing silic...

Crystal pulling systems having a cover member for covering the sili...

Method for simultaneously manufacturing more than one single crysta...

Method for producing wafers with modification lines of defined orie...

Silicon carbide composite wafer and manufacturing method thereof

Optimized heteroepitaxial growth of semiconductors

Methods and devices for growing scintillation crystals with multi-c...

Methods for determining suitability of silicon substrates for epitaxy

Method for polishing single-crystal diamond

Passivation of nonlinear optical crystals

Use of quartz plates during growth of single crystal silicon ingots

Method of obtaining a smooth surface with epitaxial lateral overgrowth

GA-based van der Waals room-temperature ferromagnetic crystal mater...

Non-polar III-nitride binary and ternary materials, method for obta...

Method of growing bulk single crystal diamond on a substrate in a p...

SiC wafer and manufacturing method for SiC wafer

Patents Applicationslast 30 patents

Methods of Growing Co-Doped Cerium Calcium Lutetium-Yttrium Oxyorth...

FABRICATION OF N-FACE III-NITRIDES BY REMOTE EPITAXY

METHOD FOR PRODUCING BETA-GA2O3/BETA-GA2O3 MULTILAYER BODY

SEED SUBSTRATE FOR EPITAXIAL GROWTH AND METHOD FOR PRODUCING SAME,...

CVD SINGLE CRYSTAL DIAMOND

LITHIUM NICKEL MANGANESE COBALT OXIDE HIGH-NICKEL SINGLE-CRYSTAL PO...

UNDERLYING SUBSTRATE, SINGLE CRYSTAL DIAMOND LAMINATE SUBSTRATE, AN...

PEROVSKITE OXIDE THIN FILM USING A SELECTIVE A-SITE ATOMIC GRADIENT...

SEED CRYSTAL LIFTING DEVICE AND SINGLE CRYSTAL FURNACE

GAN SUBSTRATE

METHOD AND APPARATUS FOR PRODUCING NITROGEN COMPOUND

SUPERLATTICE STRUCTURE AND MANUFACTURING METHOD THEREFOR

VOID DEFECT FORMING METHOD, DEVICE, AND DIAMOND MANUFACTURING METHOD

IN-SITU FILM GROWTH RATE MONITORING APPARATUS, SYSTEMS, AND METHODS...

3D structured inorganic nanoscale product and printing method and a...

Process for Manufacturing Single-Crystal Fiber

SINTERED BODY, SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND M...

METHOD FOR WAFER TREATMENT

PROCESS FOR GROWTH OF ATOMIC LAYER TRANSITION METAL DICHALCOGENIDES

GAN EPITAXIAL SUBSTRATE

METHOD FOR MANUFACTURING CRYSTALLIZED LAMINATED STRUCTURE

FINS ON CRUCIBLE OR GUSSETS ON REFRACTORY LINING FOR FACILITATING E...

COMPOSITE SUBSTRATE AND MANUFACTURING METHOD THEREOF

GROWTH METHOD AND STRUCTURE OF LED EPITAXY

DISCOVERY OF DOUBLE HELIX AND IMPACT ON NANOSCALE TO MESOSCALE CRYS...

DIAMONDS AND HETERO-EPITAXIAL METHOD OF FORMING DIAMONDS

PROCESS FOR PRODUCING A SINGLE CRYSTAL FROM SILICON

ALN SINGLE CRYSTAL SUBSTRATE AND DEVICE

METHOD FOR PREPARING DIRECTIONALLY SOLIDIFIED TiAl ALLOY

LITHIUM ION SECONDARY BATTERY AND METHOD FOR MANUFACTURING THE SAME