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Industry

  • CPC
  • G11C19/00
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Sub Industries

G11C19/005with ferro-electric elements (condensers) G11C19/02using magnetic elements G11C19/04using cores with one aperture or magnetic loop G11C19/06using structures with a number of apertures or magnetic loops G11C19/08using thin films in plane structure G11C19/0808using magnetic domain propagation G11C19/0816using a rotating or alternating coplanar magnetic field G11C19/0825using a variable perpendicular magnetic field G11C19/0833using magnetic domain interaction G11C19/0841using electric current G11C19/085Generating magnetic fields therefor G11C19/0858Generating, replicating or annihilating magnetic domains (also comprising different types of magnetic domains G11C19/0866Detecting magnetic domains G11C19/0875Organisation of a plurality of magnetic shift registers G11C19/0883Means for switching magnetic domains from one path into another path G11C19/0891using hybrid structure G11C19/10using thin films on rods with twistors G11C19/12using non-linear reactive devices in resonant circuits G11C19/14using magnetic elements in combination with active elements G11C19/18using capacitors as main elements of the stages G11C19/182in combination with semiconductor elements G11C19/184with field-effect transistors G11C19/186using only one transistor per capacitor G11C19/188Organisation of a multiplicity of shift registers G11C19/20using discharge tubes G11C19/202with vacuum tubes G11C19/205with gas-filled tubes G11C19/207with counting tubes G11C19/28using semiconductor elements G11C19/282with charge storage in a depletion layer G11C19/285Peripheral circuits G11C19/287Organisation of a multiplicity of shift registers G11C19/30using opto-electronic devices G11C19/32using super-conductive elements G11C19/34using storage elements with more than two stable states represented by steps G11C19/36using multistable semiconductor elements G11C19/38two-dimensional