Erasing

Industry

CPC
G11C13/0097

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Parent Industries

GPHYSICS G11Information storage G11CSTATIC STORES G11C13/00Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00 - G11C25/00

Current Industry

G11C13/0097Erasing

Industries

Patents Grantslast 30 patents

Information Patent Grant
Resistive memory
- Patent number 12,185,554
- Issue date Dec 31, 2024
- Winbond Electronics Corp.
- Yasuhiro Tomita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for resetting an array of resistive memory cells
- Patent number 12,165,706
- Issue date Dec 10, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gabriel Molas
- G11 - INFORMATION STORAGE
Information Patent Grant
Technologies for controlling current through memory cells
- Patent number 12,154,623
- Issue date Nov 26, 2024
- Intel Corporation
- Noble Narku-Tetteh
- G11 - INFORMATION STORAGE
Information Patent Grant
ReRAM memory array that includes ReRAM memory cells having a ReRAM...
- Patent number 12,154,622
- Issue date Nov 26, 2024
- Microsemi SoC Corp.
- Victor Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random-access memory (ReRAM) cell optimized for reset and...
- Patent number 12,131,777
- Issue date Oct 29, 2024
- Weebit Nano Ltd.
- Lior Dagan
- G11 - INFORMATION STORAGE
Information Patent Grant
Dynamic host allocation of physical unclonable feature operation fo...
- Patent number 12,087,397
- Issue date Sep 10, 2024
- Crossbar, Inc.
- Mehdi Asnaashari
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Memory cells with asymmetrical electrode interfaces
- Patent number 12,082,513
- Issue date Sep 3, 2024
- Micron Technology, Inc.
- Agostino Pirovano
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 12,075,636
- Issue date Aug 27, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Circuitry for parallel set and reset of resistive random-access mem...
- Patent number 12,068,028
- Issue date Aug 20, 2024
- Weebit Nano Ltd.
- Lior Dagan
- G11 - INFORMATION STORAGE
Information Patent Grant
Techniques for multi-level chalcogenide memory cell programming
- Patent number 12,033,695
- Issue date Jul 9, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Grant
Method for resetting an array of resistive memory cells
- Patent number 12,033,698
- Issue date Jul 9, 2024
- Commissariat a l'Energie Atomique et Aux Energies Alternatives
- Gabriel Molas
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for selectively operating multiple memory groups in d...
- Patent number 12,020,763
- Issue date Jun 25, 2024
- SK Hynix Inc.
- Hyung-Sik Won
- G11 - INFORMATION STORAGE
Information Patent Grant
Reverse programmed resistive random access memory (RAM) for one tim...
- Patent number 12,020,748
- Issue date Jun 25, 2024
- Crossbar, Inc.
- Zhi Li
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device for selectively operating multiple memory groups in d...
- Patent number 12,020,764
- Issue date Jun 25, 2024
- SK Hynix Inc.
- Hyung-Sik Won
- G11 - INFORMATION STORAGE
Information Patent Grant
Processing unit with fast read speed memory device
- Patent number 11,984,163
- Issue date May 14, 2024
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Fabrication of stackable embedded eDRAM using a binary alloy based...
- Patent number 11,985,909
- Issue date May 14, 2024
- Intel Corporation
- Elijah Karpov
- G11 - INFORMATION STORAGE
Information Patent Grant
Configuration bit using RRAM
- Patent number 11,973,500
- Issue date Apr 30, 2024
- Crossbar, Inc.
- Sang Nguyen
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive random access memory device with three-dimensional cross-...
- Patent number 11,972,796
- Issue date Apr 30, 2024
- Kioxia Corporation
- Kikuko Sugimae
- G11 - INFORMATION STORAGE
Information Patent Grant
Methods for accessing resistive change elements operable as antifuses
- Patent number 11,972,830
- Issue date Apr 30, 2024
- Nantero, Inc.
- Jia Luo
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory cells, memory cell arrays, methods of using and methods of m...
- Patent number 11,948,637
- Issue date Apr 2, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Grant
Cell cycling to minimize resistive memory random number correlation
- Patent number 11,923,005
- Issue date Mar 5, 2024
- Crossbar, Inc.
- Mehdi Asnaashari
- G11 - INFORMATION STORAGE
Information Patent Grant
2T-1R architecture for resistive ram
- Patent number 11,908,515
- Issue date Feb 20, 2024
- Hefei Reliance Memory Limited
- Deepak Chandra Sekar
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device and memory system capable of using redundancy memory...
- Patent number 11,901,032
- Issue date Feb 13, 2024
- SK Hynix Inc.
- Hyung-Sik Won
- G11 - INFORMATION STORAGE
Information Patent Grant
Memory device, integrated circuit device and method
- Patent number 11,864,393
- Issue date Jan 2, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd
- Meng-Han Lin
- G11 - INFORMATION STORAGE
Information Patent Grant
Threshold voltage-modulated memory device using variable-capacitanc...
- Patent number 11,856,801
- Issue date Dec 26, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen Jiang
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistance change memory cell circuits and methods
- Patent number 11,848,050
- Issue date Dec 19, 2023
- Hefei Reliance Memory Limited
- Brent Steven Haukness
- G11 - INFORMATION STORAGE
Information Patent Grant
Parallel drift cancellation
- Patent number 11,848,051
- Issue date Dec 19, 2023
- Micron Technology, Inc.
- Fabio Pellizzer
- G11 - INFORMATION STORAGE
Information Patent Grant
Adaptive control to access current of memory cell description
- Patent number 11,823,737
- Issue date Nov 21, 2023
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Grant
Phase-change memory device having reversed phase-change characteris...
- Patent number 11,812,661
- Issue date Nov 7, 2023
- Samsung Electronics Co., Ltd.
- Yun Heub Song
- G11 - INFORMATION STORAGE
Information Patent Grant
Resistive memory device and method of operating the resistive memor...
- Patent number 11,804,265
- Issue date Oct 31, 2023
- SK Hynix Inc.
- In Ku Kang
- G11 - INFORMATION STORAGE

Patents Applicationslast 30 patents

Information Patent Application
OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT
- Publication number 20240428854
- Publication date Dec 26, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Cheng-Hsien Wu
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING
- Publication number 20240404590
- Publication date Dec 5, 2024
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
NON-VOLATILE MEMORY DEVICE
- Publication number 20240386952
- Publication date Nov 21, 2024
- Rohm Co., Ltd.
- Seiji Takenaka
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY MODULE
- Publication number 20240363160
- Publication date Oct 31, 2024
- Sony Semiconductor Solutions Corporation
- YOTARO MORI
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
ELECTRONIC DEVICE AND METHOD FOR OPERATING THE SAME
- Publication number 20240363161
- Publication date Oct 31, 2024
- Macronix International Co., Ltd.
- Cheng-Lin SUNG
- G11 - INFORMATION STORAGE
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20240357840
- Publication date Oct 24, 2024
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
ERASE ALGORITHM WITH A WEAK PROGRAM PULSE FOR NON-VOLATILE MEMORY
- Publication number 20240304243
- Publication date Sep 12, 2024
- Crossbar, Inc.
- Zhi Li
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, Memory Cell Arrays, Methods of Using and Methods of M...
- Publication number 20240185917
- Publication date Jun 6, 2024
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE
- Publication number 20240099025
- Publication date Mar 21, 2024
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han LIN
- G11 - INFORMATION STORAGE
Information Patent Application
TOGGLING KNOWN PATTERNS FOR READING MEMORY CELLS IN A MEMORY DEVICE
- Publication number 20240012576
- Publication date Jan 11, 2024
- Micron Technology, Inc.
- Andrea Martinelli
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE MEMORY DEVICE AND METHOD OF OPERATING THE RESISTIVE MEMOR...
- Publication number 20240005989
- Publication date Jan 4, 2024
- SK HYNIX INC.
- In Ku KANG
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY APPARATUS USING SEMICONDUCTOR DEVICES
- Publication number 20230420044
- Publication date Dec 28, 2023
- Unisantis Electronics Singapore PTE Ltd.
- Koji SAKUI
- G11 - INFORMATION STORAGE
Information Patent Application
THREE DIMENSIONAL MEMORY AND METHODS OF FORMING THE SAME
- Publication number 20230413559
- Publication date Dec 21, 2023
- Micron Technology, Inc.
- Sanh D. Tang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY CELL, ELECTRONIC CIRCUIT COMPRISING SUCH CELLS, RELATED PROG...
- Publication number 20230368839
- Publication date Nov 16, 2023
- Commissariat A L'Energie Atomique et Aux Energies Alternatives
- Djohan BONNET
- G11 - INFORMATION STORAGE
Information Patent Application
THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...
- Publication number 20230371288
- Publication date Nov 16, 2023
- Taiwan Semiconductor Manufacturing Company Limited
- Fa-Shen JIANG
- G11 - INFORMATION STORAGE
Information Patent Application
TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING
- Publication number 20230360699
- Publication date Nov 9, 2023
- Micron Technology, Inc.
- Innocenzo Tortorelli
- G11 - INFORMATION STORAGE
Information Patent Application
REDUCING DISTURBANCE IN CROSSBAR ARRAY CIRCUITS
- Publication number 20230335190
- Publication date Oct 19, 2023
- TetraMem Inc.
- Ning Ge
- G11 - INFORMATION STORAGE
Information Patent Application
REVERSE PROGRAMMED RESISTIVE RANDOM ACCESS MEMORY (RAM) FOR ONE TIM...
- Publication number 20230317157
- Publication date Oct 5, 2023
- Crossbar, Inc.
- Zhi Li
- G11 - INFORMATION STORAGE
Information Patent Application
CELL CYCLING TO MINIMIZE RESISTIVE MEMORY RANDOM NUMBER CORRELATION
- Publication number 20230307044
- Publication date Sep 28, 2023
- Crossbar, Inc.
- Mehdi Asnaashari
- G11 - INFORMATION STORAGE
Information Patent Application
PROGRAMMING CIRCUIT, INTEGRATED CIRCUIT, AND METHOD
- Publication number 20230306245
- Publication date Sep 28, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Jen-Chieh LIU
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
CONFIGURATION BIT USING RRAM
- Publication number 20230299772
- Publication date Sep 21, 2023
- Crossbar, Inc.
- Sang Nguyen
- G11 - INFORMATION STORAGE
Information Patent Application
APPARATUS, METHOD AND SYSTEM TO IMPLEMENT A DUAL VDM SCHEME ON A TH...
- Publication number 20230289099
- Publication date Sep 14, 2023
- Intel Corporation
- Yasir Mohsin Husain
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
RESISTIVE MEMORY CELL AND ASSOCIATED CELL ARRAY STRUCTURE
- Publication number 20230262994
- Publication date Aug 17, 2023
- EMEMORY TECHNOLOGY INC.
- Tsung-Mu LAI
- G11 - INFORMATION STORAGE
Information Patent Application
ADAPTIVE CONTROL TO ACCESS CURRENT OF MEMORY CELL DESCRIPTION
- Publication number 20230207004
- Publication date Jun 29, 2023
- Micron Technology, Inc.
- Marco Sforzin
- G11 - INFORMATION STORAGE
Information Patent Application
METHOD FOR RESETTING AN ARRAY OF RESISTIVE MEMORY CELLS
- Publication number 20230170023
- Publication date Jun 1, 2023
- COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES AL TERNATIVES
- Gabriel MOLAS
- G11 - INFORMATION STORAGE
Information Patent Application
NONVOLATILE MEMORY DEVICE
- Publication number 20230170020
- Publication date Jun 1, 2023
- SK HYNIX INC.
- Jeong Hwan SONG
- G11 - INFORMATION STORAGE
Information Patent Application
LOGIC GATES AND STATEFUL LOGIC USING PHASE CHANGE MEMORY
- Publication number 20230155590
- Publication date May 18, 2023
- Technion Research & Development Foundation Limited
- Shahar KVATINSKY
- G11 - INFORMATION STORAGE
Information Patent Application
MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD
- Publication number 20230157034
- Publication date May 18, 2023
- Taiwan Semiconductor Manufacturing Company, Ltd.
- Meng-Han LIN
- G11 - INFORMATION STORAGE
Information Patent Application
2T-1R ARCHITECTURE FOR RESISTIVE RAM
- Publication number 20230154531
- Publication date May 18, 2023
- Hefei Reliance Memory Limited
- Deepak Chandra SEKAR
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Cells, Memory Cell Arrays, Methods of Using and Methods of M...
- Publication number 20230125479
- Publication date Apr 27, 2023
- Zeno Semiconductor, Inc.
- Yuniarto Widjaja
- G11 - INFORMATION STORAGE

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Resistive memory

Method for resetting an array of resistive memory cells

Technologies for controlling current through memory cells

ReRAM memory array that includes ReRAM memory cells having a ReRAM...

Resistive random-access memory (ReRAM) cell optimized for reset and...

Dynamic host allocation of physical unclonable feature operation fo...

Memory cells with asymmetrical electrode interfaces

Threshold voltage-modulated memory device using variable-capacitanc...

Circuitry for parallel set and reset of resistive random-access mem...

Techniques for multi-level chalcogenide memory cell programming

Method for resetting an array of resistive memory cells

Memory device for selectively operating multiple memory groups in d...

Reverse programmed resistive random access memory (RAM) for one tim...

Memory device for selectively operating multiple memory groups in d...

Processing unit with fast read speed memory device

Fabrication of stackable embedded eDRAM using a binary alloy based...

Configuration bit using RRAM

Resistive random access memory device with three-dimensional cross-...

Methods for accessing resistive change elements operable as antifuses

Memory cells, memory cell arrays, methods of using and methods of m...

Cell cycling to minimize resistive memory random number correlation

2T-1R architecture for resistive ram

Memory device and memory system capable of using redundancy memory...

Memory device, integrated circuit device and method

Threshold voltage-modulated memory device using variable-capacitanc...

Resistance change memory cell circuits and methods

Parallel drift cancellation

Adaptive control to access current of memory cell description

Phase-change memory device having reversed phase-change characteris...

Resistive memory device and method of operating the resistive memor...

Patents Applicationslast 30 patents

OPERATING METHOD, MEMORY SYSTEM, AND CONTROL CIRCUIT

TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING

NON-VOLATILE MEMORY DEVICE

MEMORY MODULE

ELECTRONIC DEVICE AND METHOD FOR OPERATING THE SAME

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...

ERASE ALGORITHM WITH A WEAK PROGRAM PULSE FOR NON-VOLATILE MEMORY

Memory Cells, Memory Cell Arrays, Methods of Using and Methods of M...

MEMORY DEVICE, AND INTEGRATED CIRCUIT DEVICE

TOGGLING KNOWN PATTERNS FOR READING MEMORY CELLS IN A MEMORY DEVICE

RESISTIVE MEMORY DEVICE AND METHOD OF OPERATING THE RESISTIVE MEMOR...

MEMORY APPARATUS USING SEMICONDUCTOR DEVICES

THREE DIMENSIONAL MEMORY AND METHODS OF FORMING THE SAME

MEMORY CELL, ELECTRONIC CIRCUIT COMPRISING SUCH CELLS, RELATED PROG...

THRESHOLD VOLTAGE-MODULATED MEMORY DEVICE USING VARIABLE-CAPACITANC...

TECHNIQUES FOR MULTI-LEVEL MEMORY CELL PROGRAMMING

REDUCING DISTURBANCE IN CROSSBAR ARRAY CIRCUITS

REVERSE PROGRAMMED RESISTIVE RANDOM ACCESS MEMORY (RAM) FOR ONE TIM...

CELL CYCLING TO MINIMIZE RESISTIVE MEMORY RANDOM NUMBER CORRELATION

PROGRAMMING CIRCUIT, INTEGRATED CIRCUIT, AND METHOD

CONFIGURATION BIT USING RRAM

APPARATUS, METHOD AND SYSTEM TO IMPLEMENT A DUAL VDM SCHEME ON A TH...

RESISTIVE MEMORY CELL AND ASSOCIATED CELL ARRAY STRUCTURE

ADAPTIVE CONTROL TO ACCESS CURRENT OF MEMORY CELL DESCRIPTION

METHOD FOR RESETTING AN ARRAY OF RESISTIVE MEMORY CELLS

NONVOLATILE MEMORY DEVICE

LOGIC GATES AND STATEFUL LOGIC USING PHASE CHANGE MEMORY

MEMORY DEVICE, INTEGRATED CIRCUIT DEVICE AND METHOD

2T-1R ARCHITECTURE FOR RESISTIVE RAM

Memory Cells, Memory Cell Arrays, Methods of Using and Methods of M...