including pressurized crystallization means [e.g., hydrothermal]

Industry

CPC
Y10T117/1096

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Parent Industries

YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS Y10USPC classification Y10TTECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION Y10T117/00Single-crystal, oriented-crystal, and epitaxy growth processes non-coating apparatus therefor

Current Industry

Y10T117/1096including pressurized crystallization means [e.g., hydrothermal]

Industries

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Patents Grantslast 30 patents

Information Patent Grant
Synthetic block for optimizing the performance of diamonds and gems...
- Patent number 11,925,924
- Issue date Mar 12, 2024
- GUILIN KEYSTONE MACHINERY CO., Ltd.
- Xiaowen Zhang
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Apparatus for processing materials at high temperatures and pressures
- Patent number 10,145,021
- Issue date Dec 4, 2018
- SLT TECHNOLOGIES, INC.
- Kirsh Afimiwala
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of manufacturing a pressure vessel for growing single crystals
- Patent number 9,926,642
- Issue date Mar 27, 2018
- Furuya Metal Co., Ltd.
- Yuji Sasagawa
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 9,869,033
- Issue date Jan 16, 2018
- Ricoh Company, Ltd.
- Seiji Sarayama
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method for growing group III-nitride crystals in supercritical ammo...
- Patent number 9,551,088
- Issue date Jan 24, 2017
- The Regents of the University of California
- Kenji Fujito
- C30 - CRYSTAL GROWTH
Information Patent Grant
Process for producing nitride crystal, nitride crystal and apparatu...
- Patent number 9,192,910
- Issue date Nov 24, 2015
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
Pressure vessel for growing single crystals
- Patent number 9,127,372
- Issue date Sep 8, 2015
- The Japan Steel Works, Ltd.
- Yuji Sasagawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for charging with liquefied ammonia, method for producing ni...
- Patent number 8,721,788
- Issue date May 13, 2014
- Mitsubishi Chemical Corporation
- Yuuichi Katou
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for growing group III-nitride crystals in supercritical ammo...
- Patent number 8,709,371
- Issue date Apr 29, 2014
- The Regents of the University of California
- Kenji Fujito
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production method, production vessel and member for nitride crystal
- Patent number 8,609,059
- Issue date Dec 17, 2013
- Mitsubishi Chemical Corporation
- Yutaka Mikawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 8,591,647
- Issue date Nov 26, 2013
- Ricoh Company, Ltd.
- Seiji Sarayama
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Grant
Using boron-containing compounds, gasses and fluids during ammonoth...
- Patent number 8,574,525
- Issue date Nov 5, 2013
- The Regents of the University of California
- Siddha Pimputkar
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing semiconductor crystal, apparatus for crystal p...
- Patent number 8,574,532
- Issue date Nov 5, 2013
- Mitsubishi Chemical Corporation
- Hideo Fujisawa
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for growing single crystal of group III metal nitride and re...
- Patent number 8,568,532
- Issue date Oct 29, 2013
- NGK Insulators, Ltd.
- Makoto Iwai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
High pressure apparatus with stackable rings
- Patent number 8,435,347
- Issue date May 7, 2013
- Soraa, Inc.
- Mark P. D'Evelyn
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus and method for seed crystal utilization in large-scale ma...
- Patent number 8,430,958
- Issue date Apr 30, 2013
- Soraa, Inc.
- Mark P. D'Evelyn
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Process and apparatus for growing a crystalline gallium-containing...
- Patent number 8,323,405
- Issue date Dec 4, 2012
- Soraa, Inc.
- Mark P. D'Evelyn
- B01 - PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
Information Patent Grant
High pressure apparatus and method for nitride crystal growth
- Patent number 8,097,081
- Issue date Jan 17, 2012
- Soraa, Inc.
- Mark P. D'Evelyn
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Formable sealant barrier
- Patent number 7,985,059
- Issue date Jul 26, 2011
- David R. Hall
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Group III nitride crystal, crystal growth process and crystal growt...
- Patent number 7,981,213
- Issue date Jul 19, 2011
- Ricoh Company, Ltd.
- Hirokazu Iwata
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing group-III-element nitride single crystals and...
- Patent number 7,959,729
- Issue date Jun 14, 2011
- Osaka University
- Takatomo Sasaki
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Formable sealant barrier
- Patent number 7,927,085
- Issue date Apr 19, 2011
- David R. Hall
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Grant
Process and apparatus for producing nitride single crystal
- Patent number 7,833,347
- Issue date Nov 16, 2010
- NGK Insulators, Ltd.
- Makoto Iwai
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Method for producing III group element nitride crystal, production...
- Patent number 7,794,539
- Issue date Sep 14, 2010
- Panasonic Corporation
- Hisashi Minemoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for production of crystal of group III element nitride an...
- Patent number 7,754,012
- Issue date Jul 13, 2010
- Panasonic Corporation
- Hisashi Minemoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Cooling system for chamber of ingot growth arrangement
- Patent number 7,686,888
- Issue date Mar 30, 2010
- Qualiflownaratech Co., Ltd.
- Jong Gu Lee
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Production of a GaN bulk crystal substrate and a semiconductor devi...
- Patent number 7,508,003
- Issue date Mar 24, 2009
- Ricoh Company, Ltd.
- Seiji Sarayama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Seed crystal fixing apparatus and a method for fixing the seed crystal
- Patent number 7,497,906
- Issue date Mar 3, 2009
- Bridgestone Corporation
- Daisuke Kondo
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for manufacturing single crystal
- Patent number 7,396,411
- Issue date Jul 8, 2008
- Denso Corporation
- Tomohisa Kato
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Apparatus for production of crystal of group III element nitride an...
- Patent number 7,381,268
- Issue date Jun 3, 2008
- Matsushita Electric Industrial Co., Ltd.
- Hisashi Minemoto
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC

Patents Applicationslast 30 patents

Information Patent Application
REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF...
- Publication number 20140326175
- Publication date Nov 6, 2014
- Sixpoint Materials, Inc.
- Tadao HASHIMOTO
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL AND AUTOCLAVE FOR USE I...
- Publication number 20140205840
- Publication date Jul 24, 2014
- TOHOKU UNIVERSITY
- Kensuke Aoki
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN SUPERCRITICAL AMMO...
- Publication number 20140190403
- Publication date Jul 10, 2014
- Japan Science and Technology Agency
- Kenji Fujito
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTOR DESIGNS FOR USE IN AMMONOTHERMAL GROWTH OF GROUP-III NITRID...
- Publication number 20140116326
- Publication date May 1, 2014
- The Regents of the University of California
- Siddha Pimputkar
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...
- Publication number 20140044970
- Publication date Feb 13, 2014
- RICOH COMPANY, LTD.
- Seiji SARAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTH...
- Publication number 20130340672
- Publication date Dec 26, 2013
- The Regents of the University of California
- Siddha Pimputkar
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS USED FOR THE GROWTH OF GROUP-III NITRIDE CRYSTALS UTILIZI...
- Publication number 20130263775
- Publication date Oct 10, 2013
- The Regents of the University of California
- Siddha Pimputkar
- C30 - CRYSTAL GROWTH
Information Patent Application
USE OF ALKALINE-EARTH METALS TO REDUCE IMPURITY INCORPORATION INTO...
- Publication number 20130099180
- Publication date Apr 25, 2013
- The Regents of the University of California
- Siddha Pimputkar
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD, PRODUCTION VESSEL AND MEMBER FOR NITRIDE CRYSTAL
- Publication number 20120237431
- Publication date Sep 20, 2012
- MITSUBISHI CHEMICAL CORPORATION
- YUTAKA MIKAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL, APPARATUS FOR CRYSTAL P...
- Publication number 20120164057
- Publication date Jun 28, 2012
- MITSUBISHI CHEMICAL CORPORATION
- Hideo FUJISAWA
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR GROWING SINGLE CRYSTAL OF GROUP III METAL NITRIDE AND RE...
- Publication number 20120137961
- Publication date Jun 7, 2012
- Makoto Iwai
- C30 - CRYSTAL GROWTH
Information Patent Application
High Pressure Apparatus with Stackable Rings
- Publication number 20120137966
- Publication date Jun 7, 2012
- Elmhurst Research, Inc.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
High Pressure Apparatus and Method for Nitride Crystal Growth
- Publication number 20120118223
- Publication date May 17, 2012
- Soraa, Inc.
- Mark P. D'Evelyn
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP-III NITRIDE CRYSTAL AMMONOTHERMALLY GROWN USING AN INITIALLY...
- Publication number 20120063987
- Publication date Mar 15, 2012
- The Regents of the University of California
- Siddha Pimputkar
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING NITRIDE CRYSTAL, NITRIDE CRYSTAL AND APPARATU...
- Publication number 20110268645
- Publication date Nov 3, 2011
- TOHOKU UNIVERSITY
- Yutaka Mikawa
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTOR DESIGNS FOR USE IN AMMONOTHERMAL GROWTH OF GROUP-III NITRID...
- Publication number 20110220013
- Publication date Sep 15, 2011
- The Regents of the University of California
- Siddha Pimputkar
- C30 - CRYSTAL GROWTH
Information Patent Application
USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTH...
- Publication number 20110223092
- Publication date Sep 15, 2011
- The Regents of the University of California
- Siddha Pimputkar
- C30 - CRYSTAL GROWTH
Information Patent Application
PLANT AND METHOD FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GAL...
- Publication number 20110100291
- Publication date May 5, 2011
- SORAA, INC.
- MARK P. D' EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR CHARGING WITH LIQUEFIED AMMONIA, METHOD FOR PRODUCING NI...
- Publication number 20100294195
- Publication date Nov 25, 2010
- MITSUBISHI CHEMICAL CORPORATION
- Yuuichi Katou
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE CRYSTAL, METHOD FOR GROWING THE GROUP III NITRIDE...
- Publication number 20100260656
- Publication date Oct 14, 2010
- PANASONIC CORPORATION
- Hisashi Minemoto
- C30 - CRYSTAL GROWTH
Information Patent Application
Method for Growing Group III-Nitride Crystals in Supercritical Ammo...
- Publication number 20100158785
- Publication date Jun 24, 2010
- Kenji Fujito
- C30 - CRYSTAL GROWTH
Information Patent Application
REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF...
- Publication number 20100095882
- Publication date Apr 22, 2010
- Tadao Hashimoto
- C30 - CRYSTAL GROWTH
Information Patent Application
APPARATUS AND METHOD FOR SEED CRYSTAL UTILIZATION IN LARGE-SCALE MA...
- Publication number 20100031872
- Publication date Feb 11, 2010
- SORAA, INC.
- MARK P. D' EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS AND APPARATUS FOR GROWING A CRYSTALLINE GALLIUM-CONTAINING...
- Publication number 20100031874
- Publication date Feb 11, 2010
- SORAA, INC.
- MARK P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
BASKET PROCESS AND APPARATUS FOR CRYSTALLINE GALLIUM-CONTAINING NIT...
- Publication number 20100031873
- Publication date Feb 11, 2010
- SORAA, INC.
- MARK P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
Formable Sealant Barrier
- Publication number 20090301391
- Publication date Dec 10, 2009
- David R. Hall
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH
- Publication number 20090301387
- Publication date Dec 10, 2009
- Soraa Inc.
- MARK P. D'EVELYN
- C30 - CRYSTAL GROWTH
Information Patent Application
Formable Sealant Barrier
- Publication number 20090302501
- Publication date Dec 10, 2009
- David R. Hall
- C22 - METALLURGY FERROUS OR NON-FERROUS ALLOYS TREATMENT OF ALLOYS OR NON-FER...
Information Patent Application
PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...
- Publication number 20090173274
- Publication date Jul 9, 2009
- RICOH COMPANY, LTD.
- Seiji SARAYAMA
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING A NITRIDE SINGLE CRYSTAL AND APPARATUS THEREFOR
- Publication number 20090078193
- Publication date Mar 26, 2009
- NGK Insulators, Ltd.
- Katsuhiro Imai
- C30 - CRYSTAL GROWTH

including pressurized crystallization means [e.g., hydrothermal]

Industry

Parent Industries

Current Industry

Patents Grantslast 30 patents

Synthetic block for optimizing the performance of diamonds and gems...

Apparatus for processing materials at high temperatures and pressures

Method of manufacturing a pressure vessel for growing single crystals

Production of a GaN bulk crystal substrate and a semiconductor devi...

Method for growing group III-nitride crystals in supercritical ammo...

Process for producing nitride crystal, nitride crystal and apparatu...

Pressure vessel for growing single crystals

Method for charging with liquefied ammonia, method for producing ni...

Method for growing group III-nitride crystals in supercritical ammo...

Production method, production vessel and member for nitride crystal

Production of a GaN bulk crystal substrate and a semiconductor devi...

Using boron-containing compounds, gasses and fluids during ammonoth...

Method for producing semiconductor crystal, apparatus for crystal p...

Method for growing single crystal of group III metal nitride and re...

High pressure apparatus with stackable rings

Apparatus and method for seed crystal utilization in large-scale ma...

Process and apparatus for growing a crystalline gallium-containing...

High pressure apparatus and method for nitride crystal growth

Formable sealant barrier

Group III nitride crystal, crystal growth process and crystal growt...

Method for producing group-III-element nitride single crystals and...

Formable sealant barrier

Process and apparatus for producing nitride single crystal

Method for producing III group element nitride crystal, production...

Apparatus for production of crystal of group III element nitride an...

Cooling system for chamber of ingot growth arrangement

Production of a GaN bulk crystal substrate and a semiconductor devi...

Seed crystal fixing apparatus and a method for fixing the seed crystal

Apparatus for manufacturing single crystal

Apparatus for production of crystal of group III element nitride an...

Patents Applicationslast 30 patents

REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF...

METHOD FOR PRODUCING NITRIDE SINGLE CRYSTAL AND AUTOCLAVE FOR USE I...

METHOD FOR GROWING GROUP III-NITRIDE CRYSTALS IN SUPERCRITICAL AMMO...

REACTOR DESIGNS FOR USE IN AMMONOTHERMAL GROWTH OF GROUP-III NITRID...

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...

USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTH...

APPARATUS USED FOR THE GROWTH OF GROUP-III NITRIDE CRYSTALS UTILIZI...

USE OF ALKALINE-EARTH METALS TO REDUCE IMPURITY INCORPORATION INTO...

PRODUCTION METHOD, PRODUCTION VESSEL AND MEMBER FOR NITRIDE CRYSTAL

METHOD FOR PRODUCING SEMICONDUCTOR CRYSTAL, APPARATUS FOR CRYSTAL P...

METHOD FOR GROWING SINGLE CRYSTAL OF GROUP III METAL NITRIDE AND RE...

High Pressure Apparatus with Stackable Rings

High Pressure Apparatus and Method for Nitride Crystal Growth

GROUP-III NITRIDE CRYSTAL AMMONOTHERMALLY GROWN USING AN INITIALLY...

PROCESS FOR PRODUCING NITRIDE CRYSTAL, NITRIDE CRYSTAL AND APPARATU...

REACTOR DESIGNS FOR USE IN AMMONOTHERMAL GROWTH OF GROUP-III NITRID...

USING BORON-CONTAINING COMPOUNDS, GASSES AND FLUIDS DURING AMMONOTH...

PLANT AND METHOD FOR LARGE-SCALE AMMONOTHERMAL MANUFACTURING OF GAL...

METHOD FOR CHARGING WITH LIQUEFIED AMMONIA, METHOD FOR PRODUCING NI...

GROUP III NITRIDE CRYSTAL, METHOD FOR GROWING THE GROUP III NITRIDE...

Method for Growing Group III-Nitride Crystals in Supercritical Ammo...

REACTOR DESIGN FOR GROWING GROUP III NITRIDE CRYSTALS AND METHOD OF...

APPARATUS AND METHOD FOR SEED CRYSTAL UTILIZATION IN LARGE-SCALE MA...

PROCESS AND APPARATUS FOR GROWING A CRYSTALLINE GALLIUM-CONTAINING...

BASKET PROCESS AND APPARATUS FOR CRYSTALLINE GALLIUM-CONTAINING NIT...

Formable Sealant Barrier

HIGH PRESSURE APPARATUS AND METHOD FOR NITRIDE CRYSTAL GROWTH

Formable Sealant Barrier

PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVI...

PROCESS FOR PRODUCING A NITRIDE SINGLE CRYSTAL AND APPARATUS THEREFOR